Ultra thin-film MSM photodetector with low parasitic capacitance
Publication
, Journal Article
Cha, C; Lee, Y; Jokerst, NM; Brooke, MA; Seo, SW
Published in: Proceedings of IEEE Sensors
January 1, 2006
Parasitic capacitance analysis of an ultra thin-film Metal-Semiconductor- Metal(MSM) photodetector(PD) having the lowest capacitance per unit surface area is reported in this paper. Through cladding layers removing process using etching, 50-60% decrease in the parasitic capacitance of the MSM photodetectors, compared to the conventional inverted thin-film MSM photodetectors, was obtained. The parasitic capacitance of the MSM photodetectors depending on etching time was optimized and analyzed using RF modeling techniques in this report. © 2006 IEEE.
Duke Scholars
Published In
Proceedings of IEEE Sensors
DOI
Publication Date
January 1, 2006
Start / End Page
174 / 176
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Cha, C., Lee, Y., Jokerst, N. M., Brooke, M. A., & Seo, S. W. (2006). Ultra thin-film MSM photodetector with low parasitic capacitance. Proceedings of IEEE Sensors, 174–176. https://doi.org/10.1109/ICSENS.2007.355747
Cha, C., Y. Lee, N. M. Jokerst, M. A. Brooke, and S. W. Seo. “Ultra thin-film MSM photodetector with low parasitic capacitance.” Proceedings of IEEE Sensors, January 1, 2006, 174–76. https://doi.org/10.1109/ICSENS.2007.355747.
Cha C, Lee Y, Jokerst NM, Brooke MA, Seo SW. Ultra thin-film MSM photodetector with low parasitic capacitance. Proceedings of IEEE Sensors. 2006 Jan 1;174–6.
Cha, C., et al. “Ultra thin-film MSM photodetector with low parasitic capacitance.” Proceedings of IEEE Sensors, Jan. 2006, pp. 174–76. Scopus, doi:10.1109/ICSENS.2007.355747.
Cha C, Lee Y, Jokerst NM, Brooke MA, Seo SW. Ultra thin-film MSM photodetector with low parasitic capacitance. Proceedings of IEEE Sensors. 2006 Jan 1;174–176.
Published In
Proceedings of IEEE Sensors
DOI
Publication Date
January 1, 2006
Start / End Page
174 / 176