The lever-arm model: Describing resonant tunneling under bias at a fractional quantum Hall edge
Publication
, Journal Article
Grayson, M; Tsui, DC; Pfeiffer, LN; West, KW; Chang, AM
Published in: Physica E: Low-Dimensional Systems and Nanostructures
January 1, 2002
New tunnel current measurements of resonant tunneling at voltage-biased quantum Hall effect edge were reported. Results showed that the tunneling density of states at a sharp quantum Hall edge obeyed a power-law form. The fits to this data demonstrated the robustness of the lever-arm model in quantitatively describing all observed features associated with the tunneling resonance.
Duke Scholars
Published In
Physica E: Low-Dimensional Systems and Nanostructures
DOI
ISSN
1386-9477
Publication Date
January 1, 2002
Volume
12
Issue
1-4
Start / End Page
80 / 83
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 4016 Materials engineering
- 1007 Nanotechnology
- 0912 Materials Engineering
- 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Grayson, M., Tsui, D. C., Pfeiffer, L. N., West, K. W., & Chang, A. M. (2002). The lever-arm model: Describing resonant tunneling under bias at a fractional quantum Hall edge. Physica E: Low-Dimensional Systems and Nanostructures, 12(1–4), 80–83. https://doi.org/10.1016/S1386-9477(01)00247-8
Grayson, M., D. C. Tsui, L. N. Pfeiffer, K. W. West, and A. M. Chang. “The lever-arm model: Describing resonant tunneling under bias at a fractional quantum Hall edge.” Physica E: Low-Dimensional Systems and Nanostructures 12, no. 1–4 (January 1, 2002): 80–83. https://doi.org/10.1016/S1386-9477(01)00247-8.
Grayson M, Tsui DC, Pfeiffer LN, West KW, Chang AM. The lever-arm model: Describing resonant tunneling under bias at a fractional quantum Hall edge. Physica E: Low-Dimensional Systems and Nanostructures. 2002 Jan 1;12(1–4):80–3.
Grayson, M., et al. “The lever-arm model: Describing resonant tunneling under bias at a fractional quantum Hall edge.” Physica E: Low-Dimensional Systems and Nanostructures, vol. 12, no. 1–4, Jan. 2002, pp. 80–83. Scopus, doi:10.1016/S1386-9477(01)00247-8.
Grayson M, Tsui DC, Pfeiffer LN, West KW, Chang AM. The lever-arm model: Describing resonant tunneling under bias at a fractional quantum Hall edge. Physica E: Low-Dimensional Systems and Nanostructures. 2002 Jan 1;12(1–4):80–83.
Published In
Physica E: Low-Dimensional Systems and Nanostructures
DOI
ISSN
1386-9477
Publication Date
January 1, 2002
Volume
12
Issue
1-4
Start / End Page
80 / 83
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 4016 Materials engineering
- 1007 Nanotechnology
- 0912 Materials Engineering
- 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics