Thin film multi-material OEICs
Publication
, Journal Article
Jokerst, NM
Published in: IEEE LEOS Annual Meeting - Proceedings
December 1, 1994
A promising method for integrating semiconductor devices, both electronic and optoelectronic, with arbitrary host substrates such as integrated circuits, polymers, and glass, is thin film device integration. Single crystal, thin film semiconductor devices can be separated from the growth substrate and bonded to host substrates using standard microelectronic processing, which is an attractive option for multi-material integrated optoelectronics. The epitaxial lift off (ELO) of Si, GaAs, and InP-based thin films and the bonding of these thin film devices to host substrates has been demonstrated and is reviewed here. In addition, thin film device performance before and after separation from the growth substrate is examined.
Duke Scholars
Published In
IEEE LEOS Annual Meeting - Proceedings
Publication Date
December 1, 1994
Volume
1
Start / End Page
69 / 70
Citation
APA
Chicago
ICMJE
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Jokerst, N. M. (1994). Thin film multi-material OEICs. IEEE LEOS Annual Meeting - Proceedings, 1, 69–70.
Jokerst, N. M. “Thin film multi-material OEICs.” IEEE LEOS Annual Meeting - Proceedings 1 (December 1, 1994): 69–70.
Jokerst NM. Thin film multi-material OEICs. IEEE LEOS Annual Meeting - Proceedings. 1994 Dec 1;1:69–70.
Jokerst, N. M. “Thin film multi-material OEICs.” IEEE LEOS Annual Meeting - Proceedings, vol. 1, Dec. 1994, pp. 69–70.
Jokerst NM. Thin film multi-material OEICs. IEEE LEOS Annual Meeting - Proceedings. 1994 Dec 1;1:69–70.
Published In
IEEE LEOS Annual Meeting - Proceedings
Publication Date
December 1, 1994
Volume
1
Start / End Page
69 / 70