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Carbon nanotube field-effect transistors for use as pass transistors in integrated logic gates and full subtractor circuits.

Publication ,  Journal Article
Ding, L; Zhang, Z; Pei, T; Liang, S; Wang, S; Zhou, W; Liu, J; Peng, L-M
Published in: ACS nano
May 2012

The use of carbon nanotube (CNT)-based field-effect transistors (FETs) as pass transistors is investigated. Logic gates are designed and constructed with these CNT FETs in the pass-transistor logic (PTL) style. Because two of the three terminals of every CNT FET are used as inputs, the efficiency per transistor in PTL circuits is significantly improved. With the PTL style, a single pair of FETS, one n-type and one p-type, is sufficient to construct high-performance AND or OR gates in which the measured output voltages are consistent with those quantitatively derived using the characteristics of the pair of the constituent n- and p-FETs. A one-bit full subtractor, which requires a total of 28 FETs to construct in the usual CMOS circuit, is realized on individual CNTs for the first time using the PTL style with only three pairs of n- and p-FETs.

Duke Scholars

Published In

ACS nano

DOI

EISSN

1936-086X

ISSN

1936-0851

Publication Date

May 2012

Volume

6

Issue

5

Start / End Page

4013 / 4019

Related Subject Headings

  • Nanoscience & Nanotechnology
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Ding, L., Zhang, Z., Pei, T., Liang, S., Wang, S., Zhou, W., … Peng, L.-M. (2012). Carbon nanotube field-effect transistors for use as pass transistors in integrated logic gates and full subtractor circuits. ACS Nano, 6(5), 4013–4019. https://doi.org/10.1021/nn300320j
Ding, Li, Zhiyong Zhang, Tian Pei, Shibo Liang, Sheng Wang, Weiwei Zhou, Jie Liu, and Lian-Mao Peng. “Carbon nanotube field-effect transistors for use as pass transistors in integrated logic gates and full subtractor circuits.ACS Nano 6, no. 5 (May 2012): 4013–19. https://doi.org/10.1021/nn300320j.
Ding L, Zhang Z, Pei T, Liang S, Wang S, Zhou W, et al. Carbon nanotube field-effect transistors for use as pass transistors in integrated logic gates and full subtractor circuits. ACS nano. 2012 May;6(5):4013–9.
Ding, Li, et al. “Carbon nanotube field-effect transistors for use as pass transistors in integrated logic gates and full subtractor circuits.ACS Nano, vol. 6, no. 5, May 2012, pp. 4013–19. Epmc, doi:10.1021/nn300320j.
Ding L, Zhang Z, Pei T, Liang S, Wang S, Zhou W, Liu J, Peng L-M. Carbon nanotube field-effect transistors for use as pass transistors in integrated logic gates and full subtractor circuits. ACS nano. 2012 May;6(5):4013–4019.
Journal cover image

Published In

ACS nano

DOI

EISSN

1936-086X

ISSN

1936-0851

Publication Date

May 2012

Volume

6

Issue

5

Start / End Page

4013 / 4019

Related Subject Headings

  • Nanoscience & Nanotechnology