Doping effect on carrier occupation and transport in InAs/GaAs quantum dot infrared photodetectors: A capacitance-voltage spectroscopy study
Publication
, Journal Article
Zhao, Z; Lantz, KR; Yi, C; Stiff-Roberts, AD
Published in: Conference on Quantum Electronics and Laser Science QELS Technical Digest Series
December 1, 2007
Impurity centers induced by dopants in InAs/GaAs quantum-dot systems affect energy level occupation and carrier transport in multi-layer QDIPs. In order to better understand doping effects and to optimize device performance, capacitance-voltage spectra are investigated. © 2007 Optical Society of America.
Duke Scholars
Published In
Conference on Quantum Electronics and Laser Science QELS Technical Digest Series
DOI
Publication Date
December 1, 2007
Citation
APA
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MLA
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Zhao, Z., Lantz, K. R., Yi, C., & Stiff-Roberts, A. D. (2007). Doping effect on carrier occupation and transport in InAs/GaAs quantum dot infrared photodetectors: A capacitance-voltage spectroscopy study. Conference on Quantum Electronics and Laser Science QELS Technical Digest Series. https://doi.org/10.1109/QELS.2007.4431210
Zhao, Z., K. R. Lantz, C. Yi, and A. D. Stiff-Roberts. “Doping effect on carrier occupation and transport in InAs/GaAs quantum dot infrared photodetectors: A capacitance-voltage spectroscopy study.” Conference on Quantum Electronics and Laser Science QELS Technical Digest Series, December 1, 2007. https://doi.org/10.1109/QELS.2007.4431210.
Zhao Z, Lantz KR, Yi C, Stiff-Roberts AD. Doping effect on carrier occupation and transport in InAs/GaAs quantum dot infrared photodetectors: A capacitance-voltage spectroscopy study. Conference on Quantum Electronics and Laser Science QELS Technical Digest Series. 2007 Dec 1;
Zhao, Z., et al. “Doping effect on carrier occupation and transport in InAs/GaAs quantum dot infrared photodetectors: A capacitance-voltage spectroscopy study.” Conference on Quantum Electronics and Laser Science QELS Technical Digest Series, Dec. 2007. Scopus, doi:10.1109/QELS.2007.4431210.
Zhao Z, Lantz KR, Yi C, Stiff-Roberts AD. Doping effect on carrier occupation and transport in InAs/GaAs quantum dot infrared photodetectors: A capacitance-voltage spectroscopy study. Conference on Quantum Electronics and Laser Science QELS Technical Digest Series. 2007 Dec 1;
Published In
Conference on Quantum Electronics and Laser Science QELS Technical Digest Series
DOI
Publication Date
December 1, 2007