Statistics of the domain-boundary relocation time in semiconductor superlattices
Publication
, Journal Article
Teitsworth, SW; Rogozia, M; Grahn, HT; Ploog, KH
Published in: Physical Review B - Condensed Matter and Materials Physics
January 1, 2001
Static domain formation in doped semiconductor superlattices results in several current branches separated by abrupt discontinuities that exhibit hysteresis. The transition from one branch to its adjacent one is studied by time-resolved switching experiments. The mean value of the relocation time increases by more than one order of magnitude, when the final voltage on the adjacent branch is reduced to a value approaching the discontinuity. At the same time, the distribution function of the relocation time changes from a simple Gaussian to a first-passage time form. © 2001 The American Physical Society.
Duke Scholars
Published In
Physical Review B - Condensed Matter and Materials Physics
DOI
EISSN
1550-235X
ISSN
1098-0121
Publication Date
January 1, 2001
Volume
64
Issue
4
Related Subject Headings
- Fluids & Plasmas
- 09 Engineering
- 03 Chemical Sciences
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Teitsworth, S. W., Rogozia, M., Grahn, H. T., & Ploog, K. H. (2001). Statistics of the domain-boundary relocation time in semiconductor superlattices. Physical Review B - Condensed Matter and Materials Physics, 64(4). https://doi.org/10.1103/PhysRevB.64.041308
Teitsworth, S. W., M. Rogozia, H. T. Grahn, and K. H. Ploog. “Statistics of the domain-boundary relocation time in semiconductor superlattices.” Physical Review B - Condensed Matter and Materials Physics 64, no. 4 (January 1, 2001). https://doi.org/10.1103/PhysRevB.64.041308.
Teitsworth SW, Rogozia M, Grahn HT, Ploog KH. Statistics of the domain-boundary relocation time in semiconductor superlattices. Physical Review B - Condensed Matter and Materials Physics. 2001 Jan 1;64(4).
Teitsworth, S. W., et al. “Statistics of the domain-boundary relocation time in semiconductor superlattices.” Physical Review B - Condensed Matter and Materials Physics, vol. 64, no. 4, Jan. 2001. Scopus, doi:10.1103/PhysRevB.64.041308.
Teitsworth SW, Rogozia M, Grahn HT, Ploog KH. Statistics of the domain-boundary relocation time in semiconductor superlattices. Physical Review B - Condensed Matter and Materials Physics. 2001 Jan 1;64(4).
Published In
Physical Review B - Condensed Matter and Materials Physics
DOI
EISSN
1550-235X
ISSN
1098-0121
Publication Date
January 1, 2001
Volume
64
Issue
4
Related Subject Headings
- Fluids & Plasmas
- 09 Engineering
- 03 Chemical Sciences
- 02 Physical Sciences