Magnetotunnelling measurements of localized optical phonons in GaAs/AlAs double-barrier structures
Publication
, Journal Article
Teitsworth, SW; Turley, PJ; Wallis, CR; Li, W; Bhattacharya, PK
Published in: Semiconductor Science and Technology
December 1, 1994
We have measured current-voltage characteristics at liquid-helium temperature and for magnetic fields up to 7T(parallel to the current flow) for three similar asymmetric GaAs/AlAs double-barrier structures, all of which possess large phonon-assisted tunnelling currents. Confined longitudinal optical (LO) phonons in the GaAs well layer and LO-like symmetric interface phonons treated within a dielectric continuum picture suffice to account for the measured currents. Phonon-assisted tunnelling current levels as well as magnetotunnelling data are found to depend sensitively on well and barrier widths.
Duke Scholars
Published In
Semiconductor Science and Technology
DOI
ISSN
0268-1242
Publication Date
December 1, 1994
Volume
9
Issue
5 S
Start / End Page
508 / 511
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 4009 Electronics, sensors and digital hardware
- 0912 Materials Engineering
- 0906 Electrical and Electronic Engineering
- 0204 Condensed Matter Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Teitsworth, S. W., Turley, P. J., Wallis, C. R., Li, W., & Bhattacharya, P. K. (1994). Magnetotunnelling measurements of localized optical phonons in GaAs/AlAs double-barrier structures. Semiconductor Science and Technology, 9(5 S), 508–511. https://doi.org/10.1088/0268-1242/9/5S/029
Teitsworth, S. W., P. J. Turley, C. R. Wallis, W. Li, and P. K. Bhattacharya. “Magnetotunnelling measurements of localized optical phonons in GaAs/AlAs double-barrier structures.” Semiconductor Science and Technology 9, no. 5 S (December 1, 1994): 508–11. https://doi.org/10.1088/0268-1242/9/5S/029.
Teitsworth SW, Turley PJ, Wallis CR, Li W, Bhattacharya PK. Magnetotunnelling measurements of localized optical phonons in GaAs/AlAs double-barrier structures. Semiconductor Science and Technology. 1994 Dec 1;9(5 S):508–11.
Teitsworth, S. W., et al. “Magnetotunnelling measurements of localized optical phonons in GaAs/AlAs double-barrier structures.” Semiconductor Science and Technology, vol. 9, no. 5 S, Dec. 1994, pp. 508–11. Scopus, doi:10.1088/0268-1242/9/5S/029.
Teitsworth SW, Turley PJ, Wallis CR, Li W, Bhattacharya PK. Magnetotunnelling measurements of localized optical phonons in GaAs/AlAs double-barrier structures. Semiconductor Science and Technology. 1994 Dec 1;9(5 S):508–511.
Published In
Semiconductor Science and Technology
DOI
ISSN
0268-1242
Publication Date
December 1, 1994
Volume
9
Issue
5 S
Start / End Page
508 / 511
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 4009 Electronics, sensors and digital hardware
- 0912 Materials Engineering
- 0906 Electrical and Electronic Engineering
- 0204 Condensed Matter Physics