Rare Transition Events in Nonequilibrium Systems with State-Dependent Noise: Application to Stochastic Current Switching in Semiconductor Superlattices
Publication
, Journal Article
Heymann, M; Teitsworth, SW; Mattingly, JC
August 24, 2010
Using recent mathematical advances, a geometric approach to rare noise-driven transition events in nonequilibrium systems is given, and an algorithm for computing the maximum likelihood transition curve is generalized to the case of state-dependent noise. It is applied to a model of electronic transport in semiconductor superlattices to investigate transitions between metastable electric field distributions. When the applied voltage $V$ is varied near a saddle-node bifurcation at $V_th$, the mean life time $
Duke Scholars
Publication Date
August 24, 2010
Citation
APA
Chicago
ICMJE
MLA
NLM
Heymann, M., Teitsworth, S. W., & Mattingly, J. C. (2010). Rare Transition Events in Nonequilibrium Systems with State-Dependent
Noise: Application to Stochastic Current Switching in Semiconductor
Superlattices.
Heymann, Matthias, Stephen W. Teitsworth, and Jonathan C. Mattingly. “Rare Transition Events in Nonequilibrium Systems with State-Dependent
Noise: Application to Stochastic Current Switching in Semiconductor
Superlattices,” August 24, 2010.
Heymann M, Teitsworth SW, Mattingly JC. Rare Transition Events in Nonequilibrium Systems with State-Dependent
Noise: Application to Stochastic Current Switching in Semiconductor
Superlattices. 2010 Aug 24;
Heymann, Matthias, et al. Rare Transition Events in Nonequilibrium Systems with State-Dependent
Noise: Application to Stochastic Current Switching in Semiconductor
Superlattices. Aug. 2010.
Heymann M, Teitsworth SW, Mattingly JC. Rare Transition Events in Nonequilibrium Systems with State-Dependent
Noise: Application to Stochastic Current Switching in Semiconductor
Superlattices. 2010 Aug 24;
Publication Date
August 24, 2010