Scholars@Duke publication: Strain relaxation in rapid thermally annealed InAs/GaAs quantum dot infrared photodetectors

Strain relaxation in rapid thermally annealed InAs/GaAs quantum dot infrared photodetectors

Publication , Journal Article

Stewart, K; Buda, M; Wong-Leung, J; Fu, L; Jagadish, C; Stiff-Roberts, A; Bhattacharya, P

Published in: Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

January 1, 2002

In this paper the effect of rapid thermal annealing (RTA) on a 30 stacked InAs/GaAs, molecular beam epitaxially grown quantum dot infrared detector (QDIP) device is studied. Temperatures in the range of 700 - 900°C for 60s, typical of ion implantation induced interdiffusion, are used. Double crystal X-ray diffraction (DCXRD), photoluminescence (PL), cross sectional transmission electron microscopy (XTEM) and device electrical characteristics were used to monitor changes due to RTA. The QDIP devices had good PL signal which improved upon annealing. However the device performance after RTA was poor and DCXRD and XTEM results clearly indicate that strain relaxation is occurring. The role of strain relaxation on optical and electrical properties has been discussed.

Duke Scholars

Author Adrienne Stiff-Roberts Electrical and Computer Engineering

Published In

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

DOI

10.1109/COMMAD.2002.1237293

Publication Date

January 1, 2002

Volume

2002-January

Start / End Page

475 / 478

Citation

APA

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ICMJE

MLA

NLM

Stewart, K., Buda, M., Wong-Leung, J., Fu, L., Jagadish, C., Stiff-Roberts, A., & Bhattacharya, P. (2002). Strain relaxation in rapid thermally annealed InAs/GaAs quantum dot infrared photodetectors. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, 2002-January, 475–478. https://doi.org/10.1109/COMMAD.2002.1237293

Stewart, K., M. Buda, J. Wong-Leung, L. Fu, C. Jagadish, A. Stiff-Roberts, and P. Bhattacharya. “Strain relaxation in rapid thermally annealed InAs/GaAs quantum dot infrared photodetectors.” Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD 2002-January (January 1, 2002): 475–78. https://doi.org/10.1109/COMMAD.2002.1237293.

Stewart K, Buda M, Wong-Leung J, Fu L, Jagadish C, Stiff-Roberts A, et al. Strain relaxation in rapid thermally annealed InAs/GaAs quantum dot infrared photodetectors. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD. 2002 Jan 1;2002-January:475–8.

Stewart, K., et al. “Strain relaxation in rapid thermally annealed InAs/GaAs quantum dot infrared photodetectors.” Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, vol. 2002-January, Jan. 2002, pp. 475–78. Scopus, doi:10.1109/COMMAD.2002.1237293.

Stewart K, Buda M, Wong-Leung J, Fu L, Jagadish C, Stiff-Roberts A, Bhattacharya P. Strain relaxation in rapid thermally annealed InAs/GaAs quantum dot infrared photodetectors. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD. 2002 Jan 1;2002-January:475–478.

Published In

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

DOI

10.1109/COMMAD.2002.1237293

Publication Date

January 1, 2002

Volume

2002-January

Start / End Page

475 / 478