High responsivity, low dark current, large area, heterogenously bonded annular thin-film silicon photodetectors
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, Journal Article
Dhar, S; Jokerst, NM
Published in: 2012 IEEE Photonics Conference, IPC 2012
December 1, 2012
Thin-film crystalline silicon photodiodes with the highest uncooled responsivity to dark current density ratio (0.30-0.54 cm2/nW for λ= 470 nm-600 nm) reported to date are described herein for integrated biomedical imaging and biochemical sensing. © 2012 IEEE.
Duke Scholars
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2012 IEEE Photonics Conference, IPC 2012
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Publication Date
December 1, 2012
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378 / 379
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Dhar, S., & Jokerst, N. M. (2012). High responsivity, low dark current, large area, heterogenously bonded annular thin-film silicon photodetectors. 2012 IEEE Photonics Conference, IPC 2012, 378–379. https://doi.org/10.1109/IPCon.2012.6358650
Dhar, S., and N. M. Jokerst. “High responsivity, low dark current, large area, heterogenously bonded annular thin-film silicon photodetectors.” 2012 IEEE Photonics Conference, IPC 2012, December 1, 2012, 378–79. https://doi.org/10.1109/IPCon.2012.6358650.
Dhar S, Jokerst NM. High responsivity, low dark current, large area, heterogenously bonded annular thin-film silicon photodetectors. 2012 IEEE Photonics Conference, IPC 2012. 2012 Dec 1;378–9.
Dhar, S., and N. M. Jokerst. “High responsivity, low dark current, large area, heterogenously bonded annular thin-film silicon photodetectors.” 2012 IEEE Photonics Conference, IPC 2012, Dec. 2012, pp. 378–79. Scopus, doi:10.1109/IPCon.2012.6358650.
Dhar S, Jokerst NM. High responsivity, low dark current, large area, heterogenously bonded annular thin-film silicon photodetectors. 2012 IEEE Photonics Conference, IPC 2012. 2012 Dec 1;378–379.
Published In
2012 IEEE Photonics Conference, IPC 2012
DOI
Publication Date
December 1, 2012
Start / End Page
378 / 379