Nonequilibrium quantum transport through a dissipative resonant level
The resonant-level model represents a paradigmatic quantum system which serves as a basis for many other quantum impurity models. We provide a comprehensive analysis of the nonequilibrium transport near a quantum phase transition in a spinless dissipative resonant-level model, extending earlier work. A detailed derivation of a rigorous mapping of our system onto an effective Kondo model is presented. A controlled energy-dependent renormalization-group approach is applied to compute the nonequilibrium current in the presence of a finite bias voltage V. In the linear-response regime V→0, the system exhibits as a function of the dissipative strength a localized-delocalized quantum transition of the Kosterlitz-Thouless (KT) type. We address fundamental issues of the nonequilibrium transport near the quantum phase transition: Does the bias voltage play the same role as temperature to smear out the transition? What is the scaling of the nonequilibrium conductance near the transition? At finite temperatures, we show that the conductance follows the equilibrium scaling for V
Duke Scholars
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- Fluids & Plasmas
- 09 Engineering
- 03 Chemical Sciences
- 02 Physical Sciences
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Published In
DOI
EISSN
ISSN
Publication Date
Volume
Issue
Related Subject Headings
- Fluids & Plasmas
- 09 Engineering
- 03 Chemical Sciences
- 02 Physical Sciences