Aaron D. Franklin

Conference Digest of Technical Papers SID International Symposium · January 1, 2025 We report a Liquid Crystal Display (LCD) structure employing cellulose nanocrystals (CNC) as a recyclable, non-toxic alignment layer in a twisted nematic configuration. The CNC alignment layer, fabricated via spin coating and mechanical rubbing, demonstrat ... Full text Cite

Evaluating the effect of longitudinal dose and INR data on maintenance warfarin dose predictions

Conference Bhi 2021 2021 IEEE EMBS International Conference on Biomedical and Health Informatics Proceedings · January 1, 2021 Warfarin, a commonly prescribed drug to prevent blood clots, has a highly variable individual response. Determining a maintenance warfarin dose that achieves a therapeutic blood clotting time, as measured by the international normalized ratio (INR), is cru ... Full text Cite

BYOE: Microelectronic non-idealities laboratory explorations

Conference ASEE Annual Conference and Exposition Conference Proceedings · June 22, 2020 Microelectronic circuits and semiconductor devices are presented to students and treated in circuits as ideal. This makes sense initially. Unfortunately, it is often not possible to delve fully into the many non-ideal behaviors these devices can exhibit in ... Cite

New Observations in Contact Scaling for 2D FETs

Conference Device Research Conference Conference Digest Drc · June 1, 2019 Atomically thin 2D crystals are promising channel materials for extremely scaled field-effect transistors (FETs). For devices at the scaled regime, both channel and contact length must be scaled. However, contacting 2D materials at scaled contact lengths ( ... Full text Cite

Full In-Place Printing of Flexible Electrolyte-Gated CNT-TFTs

Conference Device Research Conference Conference Digest Drc · June 1, 2019 The vast majority of research in the printed electronics space is invested into the development of RFID antennae, sensors, and transistors to facilitate the growth of ubiquitous electronics for the Internet-of-Things (IoT) [1]. Despite an intensive researc ... Full text Cite

Printing h-BN Gate Dielectric for Flexible, Low-hysteresis Carbon Nanotube Thin-Film Transistors at Low Temperature

Conference Device Research Conference Conference Digest Drc · June 1, 2019 Increasing interest in printing for flexible electronics is driven by the rapid growth and maturation of the Internet of Things (IoT) and motivates the study of printable materials and printing methods [1]. While semiconducting carbon nanotubes (CNTs) have ... Full text Cite

Exploring silver contact morphologies in printed carbon nanotube thin-film transistors

Conference Device Research Conference Conference Digest Drc · August 20, 2018 Demand for ubiquitous and flexible electronics to facilitate the rapid growth of Internet- of- Things (IoT) technologies has driven the advancement of printed electronics for low-cost and high-throughput manufacturing. The carbon nanotube thin-film transis ... Full text Cite

Bias stress stability of carbon nanotube transistors with implications for sensors

Conference Device Research Conference Conference Digest Drc · August 20, 2018 For years, carbon nanotube (CNT) field- effect transistors (CNTFETs) have been promoted for their superb performance in sensing applications [1]. As hollow cylinders of sp2-bonded carbon, CNTs have their entire crystal structure exposed and thus are highly ... Full text Cite

Fully printed and flexible carbon nanotube transistors designed for environmental pressure sensing and aimed at smart tire applications

Conference Proceedings of IEEE Sensors · December 21, 2017 As the sensor infrastructure needed to facilitate the internet-of-things (IoT) rapidly expands, printed electronics have been identified as a key approach for providing low-cost, ubiquitous sensor networks. In this work, we demonstrate the use of a fully p ... Full text Cite

Edge contacts to multilayer MoS2 using in situ Ar ion beam

Conference Device Research Conference Conference Digest Drc · August 1, 2017 The dimensional scaling of transistors has been a continuous effort for decades. For devices at the sub-5 nm scale, two-dimensional transition metal dichalcogenides, including MoS2, show great promise for preserving electrostatic control and per ... Full text Cite

Integration of 3.4 nm HfO2 into the gate stack of MOS2 and WSe2 top-gate field-effect transistors

Conference Device Research Conference Conference Digest Drc · August 1, 2017 One of the main challenges inhibiting the integration of 2D crystals into top-gate field-effect transistors (FETs) is deposition of a uniform, scalable, high-quality dielectric. The most common and controlled method of deposition of thin dielectric films i ... Full text Cite

MoS2 negative capacitance FETs with CMOS-compatible hafnium zirconium oxide

Conference Device Research Conference Conference Digest Drc · August 1, 2017 The attractiveness of negative capacitance field-effect transistors (NC-FETs) stems from their ability to enable a subthreshold swing (SS) below the 60 mV/decade thermal limit at room temperature - a direct effect of the step-up voltage amplifier behavior ... Full text Cite

Fully printed memristors from Cu-SiO2 core-shell nanowire composites

Conference Device Research Conference Conference Digest Drc · August 1, 2017 An area of printed electronics in which additional development is necessary is printable non-volatile memory, which will be essential for the development of fully printed RFID tags and sensors with integrated data storage.[1] An approach to making a printa ... Full text Cite

Scaling, stacking, and printing: How 1D and 2D nanomaterials still hold promise for a new era of electronics

Conference Digest of Technical Papers Symposium on VLSI Technology · July 31, 2017 1D and 2D nanomaterials continue to show promise for use in electronic devices. Their atomically thin size and superb transport properties make them of great value for transistors scaled in size and, more importantly, in voltage. Meanwhile, their substrate ... Full text Cite

Using Ar Ion beam exposure to improve contact resistance in MoS2 FETs

Conference Device Research Conference Conference Digest Drc · August 22, 2016 Contact resistance is a dominant factor in the performance of field-effect transistors (FETs) from two-dimensional MoS2. Several techniques have been shown to improve carrier transport at the metal-MoS2 interface, thus lowering the co ... Full text Cite

Defining and overcoming the contact resistance challenge in scaled carbon nanotube transistors

Conference Device Research Conference Conference Digest Drc · January 1, 2014 Single-walled carbon nanotubes (CNTs) offer attractive performance benefits as the channel material for aggressively scaled digital transistors that operate at low voltages. Progress continues to be made resolving the materials challenges of CNT purificati ... Full text Cite

Scalable and fully self-aligned n-type carbon nanotube transistors with gate-all-around

Conference Technical Digest International Electron Devices Meeting Iedm · December 1, 2012 While proven to provide high performance at sub-10 nm lengths, carbon nanotube (CNT) field-effect transistors (FETs) typically employ impractical gate geometries. Here we demonstrate fully self-aligned CNTFETs that include a gate-all-around (GAA) the nanot ... Full text Cite

Sub-10 nm carbon nanotube transistor

Conference Technical Digest International Electron Devices Meeting Iedm · December 1, 2011 This first demonstration of CNT transistors with channel lengths down to 9 nm shows substantially better scaling behavior than theoretically expected. Numerical simulations suggest that a possible explanation for the surprisingly good performance is a resu ... Full text Cite

Graphene technology with inverted-T gate and RF passives on 200 mm platform

Conference Technical Digest International Electron Devices Meeting Iedm · December 1, 2011 Wafer-scale graphene devices processed entirely in a standard 200 mm silicon fab are demonstrated for the first time. New embedded gate structures enable full saturation of the drain current in graphene FETs with sub-μm channels, resulting in high intrinsi ... Full text Cite

High device yield carbon nanotube NFETs for high-performance logic applications

Conference Technical Digest International Electron Devices Meeting Iedm · December 1, 2011 We present the first analysis of device yield and material composition for several low work-function metal contacts to carbon nanotubes (CNT), including the first demonstration of high-performance n-channel field-effect transistors (NFET) from erbium (Er) ... Full text Cite

Wafer scale fabrication of carbon nanotube FETs with embedded poly-gates

Conference Technical Digest International Electron Devices Meeting Iedm · December 1, 2010 One critical factor that determines the feasibility of employing carbon nanotubes as channel materials for post-silicon logic devices is the process compatibility to the current CMOS process flow. We show a wafer-scale integration scheme of carbon nanotube ... Full text Cite

Channel and contact length scaling in carbon nanotube transistors

Conference Device Research Conference Conference Digest Drc · October 11, 2010 In order to consider single-walled carbon nanotubes (SWCNTs) for a future technology their physical scaling limits must be understood. Such scaling involves shrinking two critical lengths: 1) the channel length (Lg) and 2) the less-emphasized so ... Full text Cite

Can carbon nanotube transistors be scaled without performance degradation?

Conference Technical Digest International Electron Devices Meeting Iedm · December 1, 2009 The effects of channel length scaling on carbon nanotube field-effect transistor (CNTFET) performance was investigated by varying device lengths on the same nanotube. Results show that scaling improves performance with substantial increases in on-current, ... Full text Cite

Photo-and thermionic emission from potassium-intercalated single-walled carbon nanotube arrays

Conference 2008 Proceedings of 3rd Energy Nanotechnology International Conference Enic 2008 · October 19, 2009 Vacuum thermionic electron emission has been considered for many years as a means to convert heat or solar energy directly into electrical power. However, an emitter material has not yet been identified that has a sufficiently low work function and that is ... Cite