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April S. Brown

Professor Emeritus of Electrical and Computer Engineering
Pierre R. Lamond Department of Electrical and Computer Engineering
Box 90291, Durham, NC 27708-0291
3573 CIEMAS, Box 90291, Durham, NC 27708

Scholarly Works - Conferences


Multiphase gallium-based nanoparticles for a versatile plasmonic platform

Conference Optics Infobase Conference Papers · January 1, 2018 Gallium nanoparticles have been deposited on various substrates of technological interest. The interaction with the substrate leads to two plasmon resonance modes that can be tuned from the UV to the visible and infrared. Large polarization-dependent split ... Full text Cite

Metals for UV plasmonics

Conference Optics Infobase Conference Papers · January 1, 2014 Electromagnetic enhancement of metallic nanoparticles on substrates is assessed by an exhaustive numerical analysis. The potential of each technologically promising metal for UVplasmonic applications may be ascertained.© OSA 2014. ... Full text Cite

Homodyne near-degenerate four-wave-mixing microscopy for graphene imaging and biomedical applications

Conference 2012 Conference on Lasers and Electro Optics CLEO 2012 · December 6, 2012 Homodyne detection of near-degenerate four-wave-mixing with a single laser pulse is used to imaging graphene in biological samples. © 2012 OSA. ... Cite

Homodyne near-degenerate four-wave-mixing microscopy for graphene imaging and biomedical applications

Conference CLEO Science and Innovations CLEO Si 2012 · January 1, 2012 Homodyne detection of near-degenerate four-wave-mixing with a single laser pulse is used to imaging graphene in biological samples. © OSA 2012. ... Full text Cite

Novel, real-time measurement of plasmon resonance - tailoring nanoparticle geometry optically

Conference Optics InfoBase Conference Papers · January 1, 2008 We demonstrate novel use of in situ spectroscopic ellipsometry to probe in real-time metal nanoparticle deposition. Real-time monitoring of NP assembly plasmon resonance enables control of NP size via the plasmon resonance and vice versa. ... Full text Cite

Redesign of the core curriculum at Duke University

Conference ASEE Annual Conference and Exposition, Conference Proceedings · December 1, 2006 Cite

A novel introductory course for teaching the fundamentals of electrical and computer engineering

Conference ASEE Annual Conference and Exposition, Conference Proceedings · December 1, 2006 The Electrical and Computer Engineering (ECE) department at Duke University is undergoing extensive curriculum revisions incorporating both new content and organization and innovative teaching methods. The cornerstone of the new curriculum is a theme-based ... Cite

Redesign of the core curriculum at Duke University

Conference ASEE Annual Conference and Exposition Conference Proceedings · January 1, 2006 Cite

A novel introductory course for teaching the fundamentals of electrical and computer engineering

Conference ASEE Annual Conference and Exposition Conference Proceedings · January 1, 2006 The Electrical and Computer Engineering (ECE) department at Duke University is undergoing extensive curriculum revisions incorporating both new content and organization and innovative teaching methods. The cornerstone of the new curriculum is a theme-based ... Cite

Theme-based redesign of the duke university ECE curriculum: The first steps

Conference ASEE Annual Conference and Exposition, Conference Proceedings · 2005 Undergraduates in Electrical and Computer Engineering (ECE) at Duke University have benefited from the combination of curricular flexibility and rigorous coursework. The current curriculum is further limited in that the core courses do not offer a vertical ... Cite

Work in progress: Theme-based redesign of an electrical and computer engineering curriculum

Conference Proceedings Frontiers in Education Conference Fie · December 1, 2004 The goal of this work-in-progress is to develop an innovative ECE curriculum that focuses on ECE fundamentals within the construct of real-world integrated system design, analysis, and problem solving. The curriculum will be formulated around the theme of ... Cite

Planar Lightwave Integrated Circuits Using Thin Film Optoelectronic Devices

Conference Optics Infobase Conference Papers · January 1, 2004 The integration of thin film optoelectronic devices with polymer waveguides creates optical signal propagation, distribution, and processing in a planar waveguide format. These planar lightwave integrated circuits are appropriate for applications such as o ... Cite

Large Area, High Speed InGaAs Thin Film MSMs for Heterogeneously Integrated Optoelectronics

Conference Optics Infobase Conference Papers · January 1, 2003 Thin film InGaAs photodetectors for heterogeneously integrated optoelectronics are demonstrated with low dark current (0.16nA at 5V), and high speed (3ps rise time, 6.3ps FWHM), large area (40 µm), and good responsivity (0.19A/W at 5V). ... Cite

Plasmas for the low-temperature growth of high-quality GaN films by molecular beam epitaxy and remote plasma MOCVD

Conference Physica Status Solidi (A) Applied Research · 2002 GaN heteroepitaxial growth on sapphire (0001) substrates was carried out by both radio-frequency (rf) remote plasma metalorganic chemical vapor deposition (RP-MOCVD) and molecular beam epitaxy (MBE). A multistep growth process including substrate plasma cl ... Full text Cite

Thin Film GaN Metal-semiconductor-metal Photodetectors Integrated onto Silicon

Conference Optics Infobase Conference Papers · January 1, 2002 Cite

Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks

Conference 2001 International Semiconductor Device Research Symposium Isdrs 2001 Proceedings · January 1, 2001 Statistical experimental design was used to explore the effects of the HEMT channel growth parameters on device performance. A 22 full-factorial central composite circumscribed Box-Wilson design with three center points was implemented. The grow ... Full text Cite

Neural network modeling of molecular beam epitaxy

Conference ASME International Mechanical Engineering Congress and Exposition Proceedings Imece · January 1, 2000 This paper presents the systematic characterization of the molecular beam epitaxy (MBE) process to quantitatively model the effects of process conditions on film qualities. A five-layer, undoped AlGaAs and InGaAs single quantum well structure grown on a Ga ... Full text Cite

Modeling MBE RHEED signals using PCA and neural networks

Conference Proceedings of the IEEE 24th International Symposium on Compound Semiconductors Iscs 1997 · January 1, 1997 This paper introduces a novel technique for constructing an empirical model which relates RHEED intensity patterns to the physical characteristics of MBE grown thin films. A fractional factorial experiment is used to systematically characterize the growth ... Full text Cite

DC and RF performance of 0.1 μm gate length Al.48In.52As-Ga.38In.62As pseudomorphic HEMT's

Conference Technical Digest International Electron Devices Meeting · December 1, 1988 The authors report on the epitaxial layer design, device fabrication, and millimeter-wave performance of lattice-matched and pseudomorphic AlInAs-GaInAs HEMTs (high-electron-mobility transistors). The authors fabricated 0.1-μm gate length HEMTs using pseud ... Cite