Journal articleApplied Surface Science · December 15, 2025
X-ray photoelectron spectroscopy (XPS) has been used extensively to characterize the surface chemistry of oxide-terminated III-V semiconductors. Herein, we show that during the continuous, uninterrupted acquisition of the photoelectron spectra of native ox ...
Full textCite
Journal articleAdvanced materials (Deerfield Beach, Fla.) · July 2021
Hydrogen is the key element to accomplish a carbon-free based economy. Here, the first evidence of plasmonic gallium (Ga) nanoantennas is provided as nanoreactors supported on sapphire (α-Al2 O3 ) acting as direct plasmon-enhanced pho ...
Full textCite
Journal articleNanophotonics · October 1, 2020
Reconfigurable plasmonics is driving an extensive quest for active materials that can support a controllable modulation of their optical properties for dynamically tunable plasmonic structures. Here, polymorphic gallium (Ga) is demonstrated to be a very pr ...
Full textCite
Journal articleJournal of Applied Physics · August 28, 2020
Reconfigurable plasmonics constitutes an exciting and challenging new horizon in nanophotonics. This blooming field aims at providing plasmonic nanostructures that present a dynamic and active plasmonic response that can be switched or manipulated by exter ...
Full textCite
Journal articleNano letters · May 2020
Sulfur hexafluoride (SF6) is one of the most harmful greenhouse gases producing environmental risks. Therefore, developing ways of degrading SF6 without forming hazardous products is increasingly important. Herein, we demonstrate for ...
Full textCite
Journal articleApplied Sciences Switzerland · October 1, 2019
Plasmonic metal nanoparticle (NP)-graphene (G) systems are of great interest due their potential role in applications as surface-enhanced spectroscopies, enhanced photodetection, and photocatalysis. Most of these studies have been performed using noble met ...
Full textCite
Journal articleAdvanced Optical Materials · July 4, 2019
Interest in gallium (Ga) is growing rapidly, thanks in part to its wide spectral tunability and its intriguing temperature-dependent polymorphism. In order to exploit and control phase-change plasmonics in the liquid and solid phases of Ga, an accurate und ...
Full textCite
Journal articleOptics express · February 2019
Magnesium-based films and nanostructures are being studied in order to improve hydrogen reversibility, storage capacity, and kinetics, because of their potential in the hydrogen economy. Some challenges with magnesium (Mg) samples are their unavoidable oxi ...
Full textCite
Journal articleOptical Materials Express · January 1, 2019
In order to exploit gallium's (Ga) rich polymorphism in the design of phase-change plasmonic systems, accurate understanding of the dielectric function of the different Ga-phases is crucial. The dielectric dispersion profiles of those phases appearing at a ...
Full textCite
Journal articlePhysical Review D · May 1, 2018
We report on the response of liquid xenon to low energy electronic recoils below 15 keV from beta decays of tritium at drift fields of 92 V/cm, 154 V/cm and 366 V/cm using the XENON100 detector. A data-to-simulation fitting method based on Markov Chain Mon ...
Full textCite
Journal articleNanotechnology · January 2018
We report on enhanced control of the growth of lateral GaAs nanowires (NWs) embedded in epitaxial (100) GaAsBi thin films enabled by the use of vicinal substrates and the growth-condition dependent role of Bi as a surfactant. Enhanced step-flow growth is a ...
Full textCite
Journal articleAip Advances · March 1, 2017
A high Al-content (y > 0.4) multi-quantum-well (MQW) structure with a quaternary InxAlyGa(1-x-y)N active layer was synthesized using plasma-assisted molecular beam epitaxy. The MQW structure exhibits strong carrier confinem ...
Full textCite
Journal articleNature materials · September 2016
Gallium (Ga), a group III metal, is of fundamental interest due to its polymorphism and unusual phase transition behaviours. New solid phases have been observed when Ga is confined at the nanoscale. Herein, we demonstrate the stable coexistence, from 180 K ...
Full textCite
Journal articleApplied Physics Letters · August 22, 2016
The density and energy distribution of InxAl1-xN/GaN surface donor states are studied for InxAl1-xN structures with varying indium compositions. The results support a surface states model with a constant energy d ...
Full textCite
Journal articleApplied Physics Letters · June 6, 2016
The controlled incorporation of Bi into GaAs is a key challenge to synthesizing dilute Bi materials. This work reveals the importance of the surface step density and direction on Bi incorporation. Steps in the [110] direction are demonstrated to enhance Bi ...
Full textCite
Journal articleNanotechnology · March 2016
We have examined the morphology and composition of embedded nanowires that can be formed during molecular beam epitaxy of GaAs(1-x)Bi(x) using high angle annular dark field ('Z-contrast') imaging in an aberration-corrected scanning transmission electron mi ...
Full textCite
Journal articleAip Advances · March 1, 2016
Angle-resolved X-ray photoelectron spectroscopy (XPS) is used in this work to experimentally determine the valence band offsets of molecular beam epitaxy (MBE)-grown InAlN/GaN heterostructures with varying indium composition. We find that the internal elec ...
Full textCite
Journal articleApplied Physics Letters · September 28, 2015
Thin films of the wide bandgap quaternary semiconductor InxAlyGa(1-x-y)N with low In (x=0.01-0.05) and high Al composition (y=0.40-0.49) were synthesized on GaN templates by plasma-assisted molecular beam epitaxy. High-reso ...
Full textCite
Journal articleNanoscale · August 2015
Graphene/metal heterojunctions are ubiquitous in graphene-based devices and, therefore, have attracted increasing interest of researchers. Indeed, the literature on the field reports apparently contradictory results about the effect of a metal on graphene ...
Full textCite
Journal articleApplied Physics Letters · July 20, 2015
The strain dynamic of thin film AlN is investigated before and after the deposition of a GaN epitaxial layer using plasma assisted molecular beam epitaxy. X-ray diffraction ω / 2 θ-scan and asymmetric reciprocal space mapping analysis show that the deposit ...
Full textCite
Journal articlePhysical Review B Condensed Matter and Materials Physics · July 14, 2015
We investigate the molecular beam epitaxy (MBE) growth of GaAs1-xBix film using density functional theory with spin-orbit coupling to understand the growth of this film, especially the mechanisms of Bi incorporation. We study the stable adsorption structur ...
Full textCite
Journal articleAip Advances · June 1, 2015
We report the use of two Raman signatures, the Bi-induced longitudinal-optical-plasmon-coupled (LOPC) mode and the GaAs Fröhlich scattering intensity, present in nominally undoped (100) GaAs1-yBiy to predict the 300K photoluminescence ...
Full textCite
Journal articleJournal of Vacuum Science and Technology A Vacuum Surfaces and Films · May 1, 2015
The authors have examined bismuth concentration profiles in GaAs1-xBix films grown by molecular beam epitaxy using high angle annular dark field imaging (Z-contrast imaging) in an aberration-corrected scanning transmission electron mi ...
Full textCite
Journal articleACS nano · February 2015
Gallium has recently been demonstrated as a phase-change plasmonic material offering UV tunability, facile synthesis, and a remarkable stability due to its thin, self-terminating native oxide. However, the dense irregular nanoparticle (NP) ensembles fabric ...
Full textOpen AccessCite
Journal articleApplied Physics Letters · September 29, 2014
InAlN films deposited by plasma-assisted molecular beam epitaxy exhibited a lateral composition modulation characterized by 10-12 nm diameter, honeycomb-shaped, columnar domains with Al-rich cores and In-rich boundaries. To ascertain the effect of this mic ...
Full textOpen AccessCite
Journal articleApplied Physics Letters · September 15, 2014
The growth and properties of alloys in the alternative quaternary alloy system GaAs1-y-zPyBizwere explored. This materials system allows simultaneous and independent tuning of lattice constant and band gap energy, Eg
Full textCite
Journal articleJournal of Applied Physics · July 28, 2014
Recent work has shown that Bi incorporation increases during molecular beam epitaxy (MBE) when surface processes are kinetically limited through increased growth rate. Herein we explore how the structural and optical properties of GaAs1-xBi ...
Full textCite
Journal articleACS Photonics · July 16, 2014
Self-assembled, irregular ensembles of hemispherical Ga nanoparticles (NPs) were deposited on sapphire by molecular beam epitaxy. These samples, whose constituent unimodal or bimodal distribution of NP sizes was controlled by deposition time, exhibited loc ...
Full textOpen AccessCite
Journal articleCritical reviews in biotechnology · June 2014
Exploiting the burgeoning fields of genomics, proteomics and metabolomics improves understanding of human physiology and, critically, the mutations that signal disease susceptibility. Through these emerging fields, rational design approaches to diagnosis, ...
Full textCite
Journal articleAdvanced Functional Materials · April 2, 2014
The role of graphene in enabling deoxidation of silver nanostructures, thereby contributing to enhance plasmonic properties and to improve the temporal stability of graphene/silver hybrids for both general plasmonic and meta-materials applications, as well ...
Full textCite
Journal articleACS nano · March 2014
Metal nanoparticle (NP)-graphene multifunctional platforms are of great interest for exploring strong light-graphene interactions enhanced by plasmons and for improving performance of numerous applications, such as sensing and catalysis. These platforms ca ...
Full textCite
Journal articleApplied Physics Letters · January 6, 2014
Phase shift epitaxy (PSE) is a periodic growth scheme, which desynchronizes host material growth process from dopant incorporation, allowing independent optimization. p-type doping of GaN with Mg by PSE is accomplished with molecular beam epitaxy by period ...
Full textCite
Journal articleApplied Physics Letters · October 14, 2013
A study of the relationship between strain and the incorporation of group III elements in ternary InGaN and InAlN grown by molecular beam epitaxy is reported. Using X-ray Photoelectron Spectroscopy compositional depth profiles with x-ray diffraction, we ar ...
Full textCite
Journal articleJournal of Physical Chemistry C · September 26, 2013
The practical efficacy of technologically promising metals for use in ultraviolet plasmonics (3-6 eV) is assessed by an exhaustive numerical analysis. This begins with estimates of the near- and far-field electromagnetic enhancement factors of isolated hem ...
Full textCite
Journal articleNano letters · June 2013
Self-assembled arrays of hemispherical gallium nanoparticles deposited by molecular beam epitaxy on a sapphire support are explored as a new type of substrate for ultraviolet plasmonics. Spin-casting a 5 nm film of crystal violet upon these nanoparticles p ...
Full textCite
Journal articleAnnual review of chemical and biomolecular engineering · January 2013
There is an increasing technological need for a wider array of semiconducting materials that will allow greater control over the physical and electronic structure within multilayer heterostructures. This need has led to an expansion in the range of semicon ...
Full textCite
Journal articleSmall (Weinheim an der Bergstrasse, Germany) · September 2012
Graphene is emerging as a promising material for plasmonics applications due to its strong light-matter interactions, most of which are theoretically predicted but not yet experimentally realized. Therefore, the integration of plasmonic nanoparticles to cr ...
Full textCite
Journal articleLangmuir : the ACS journal of surfaces and colloids · August 2012
Single-stranded DNA immobilized on an III-V semiconductor is a potential high-sensitivity biosensor. The chemical and electronic changes occurring upon the binding of DNA to the InAs surface are essential to understanding the DNA-immobilization mechanism. ...
Full textCite
Journal articleMaterials Science and Engineering B · June 5, 2012
This paper reports on the growth of Si nanowires (NWs) by SiH 4/H2 plasmas using the non-noble Ga-nanoparticles (NPs) catalysts. A comparative investigation of conventional Si-NWs vapour-liquid-solid (VLS) growth catalyzed by Au NPs i ...
Full textCite
Journal articlePhysica Status Solidi C Current Topics in Solid State Physics · March 1, 2012
The control of In adlayer during plasma-assisted molecular beam epitaxy (PAMBE) of InGaN/GaN multiquantum wells (MQWs) is critical to achieve good structural and optical properties. This contribution focuses on the investigation by real-time spectroscopic ...
Full textCite
Journal articleJournal of Physical Chemistry C · January 12, 2012
We investigate the chemistry and kinetics of the surface functionalization of InAs with hemin aimed at demonstrating novel hemin-functionalized InAs planar resistors or molecularly controlled resistors (MOCSERs) with subparts per billion sensitivity to NO ...
Full textCite
Journal articleLangmuir : the ACS journal of surfaces and colloids · January 2012
Attaching functional molecules such as thiols and proteins to semiconductor surfaces is increasingly exploited in functional devices such as sensors. Despite extensive research to understand this interface and demonstrate a robust protocol for attachment, ...
Full textCite
Journal articleMaterials Research Society Symposium Proceedings · December 1, 2011
The immobilization of DNA on passivated n-type InAs (100) surfaces has been studied using X-ray and ultraviolet photoelectron spectroscopy. The benefits of sulfur passivation using ammonium sulfide solution ((NH 4) 2S) for DNA immobil ...
Full textCite
Journal articleNano letters · September 2011
Numerical analyses of the ultraviolet and visible plasmonic spectra measured from hemispherical gallium nanostructures on dielectric substrates reveal that resonance frequencies are quite sensitive to illumination angle and polarization in a way that depen ...
Full textCite
Journal articleJournal of Physical Chemistry C · July 21, 2011
Gallium-magnesium (Ga-Mg) core-shell nanoparticles were synthesized by sequential evaporation of gallium and magnesium molecular beams on sapphire substrates. The surface plasmon resonance properties of this novel bimetallic system are demonstrated and inv ...
Full textCite
Journal articleProceedings of SPIE the International Society for Optical Engineering · May 23, 2011
Researchers at the Army Aviation and Missile Research, Development, and Engineering Center (AMRDEC) have initiated multidiscipline efforts to develop nano-based structures and components for insertion into advanced missile, aviation, and autonomous air and ...
Full textCite
Journal articlePhysical Review B Condensed Matter and Materials Physics · August 26, 2010
The kinetics of Ga adsorption/desorption on GaN(0001) surfaces is investigated over the temperature range of 680-750°C using real-time spectroscopic ellipsometry. The adsorption and desorption kinetics are described in the framework of the Wolkenstein theo ...
Full textOpen AccessCite
Journal articleJournal of the American Chemical Society · September 2009
Size-controlled gallium nanoparticles deposited on sapphire were explored as alternative substrates to enhance Raman spectral signatures. Gallium's resilience following oxidation is inherently advantageous in comparison with silver for practical ex vacuo n ...
Full textCite
Journal articleJournal of the Electrochemical Society · March 4, 2009
Oxide removal from InAs(100) surfaces was achieved using a combination of HF:methanol wet etching followed by atomic hydrogen treatment at a temperature as low as 100°C without any stabilizing As flux. The process was monitored in real-time exploiting spec ...
Full textCite
Journal articleJournal of Vacuum Science and Technology B Microelectronics and Nanometer Structures · February 17, 2009
Highly reactive N-polar [000-1] GaN surfaces were analyzed using spectroscopic ellipsometry. Following exposure to air, observed changes in the pseudodielectric function near the GaN band edge indicate that surface contamination reduces the band bending. A ...
Full textCite
Journal articleLangmuir · January 2009
Ga nanoparticles supported on large band gap semiconductors like SiC, GaN, and ZnO are interesting for plasmon-enhanced UV-emitting solid-state devices. We investigate the influence of the polarity of the SiC, GaN, and ZnO wurtzite semiconductors on the we ...
Cite
Journal articleSensors (Basel, Switzerland) · January 2009
Current production and emerging NO(x) sensors based on optical and nanomaterials technologies are reviewed. In view of their potential applications in mechatronics, we compared the performance of: i) Quantum cascade lasers (QCL) based photoacoustic (PA) sy ...
Full textCite
Journal articleMaterials Research Society Symposium Proceedings · December 1, 2008
Chemical functionalization of bio-molecules, including hemin (an iron porphyrin) and bovine albumin onto Si (100) and GaAs (100) surfaces is reported. Spectroscopic ellipsometry analysis on the optical response of functionalized surfaces provides informati ...
Cite
Journal articleProceedings of SPIE the International Society for Optical Engineering · November 21, 2008
A series of self-organized InAs/GaAs quantum dots with spacer layer under different thermal-treat (annealing) temperature and environments were prepared by molecular beam epitaxy. They were investigated by atomic force microscope and temperature-dependent ...
Full textCite
Journal articlePhysical Review B Condensed Matter and Materials Physics · March 20, 2008
Indium kinetics and evidence for indium segregation on the GaN (0001) surface are investigated via in situ spectroscopic ellipsometry. Indium deposition exhibits two stable states at coverages of 1.0 and 1.7 ML within the temperature range of 630-688°C. Fo ...
Full textCite
Journal articlePhysical Review B Condensed Matter and Materials Physics · March 11, 2008
The multiform donor nature of hydrogen in n -type indium nitride is experimentally observed in samples exposed to atomic hydrogen. Photoluminescence measurements reveal a tenfold increase in the electron concentration and the formation of a shallow donor b ...
Full textCite
Journal articleOptics InfoBase Conference Papers · January 1, 2008
We demonstrate novel use of in situ spectroscopic ellipsometry to probe in real-time metal nanoparticle deposition. Real-time monitoring of NP assembly plasmon resonance enables control of NP size via the plasmon resonance and vice versa. ...
Cite
Journal articleSensor Letters · January 1, 2008
Several III-V materials systems, consisting of InAs, InP, and GaN, were chemically functionalized, characterized, and evaluated for Nitric Oxide (NO) sensor research. The hemin porphyrin has been a particularly successful NO detection functional group for ...
Full textCite
Journal articleJournal of Vacuum Science and Technology B Microelectronics and Nanometer Structures · August 7, 2007
Chemical functionalization of hemin molecules onto InAs and InP is reported. X-ray photoelectron spectroscopy (XPS), atomic force microscopy, and spectroscopic ellipsometry (SE) analyses are used to characterize the III-V surfaces. One notable feature of t ...
Full textCite
Journal articleApplied Physics Letters · August 2007
The interaction of hydrogen with InN epitaxial films has been investigated by exposing InN to a remote hydrogen plasma and monitoring changes in the InN optical properties in real time via spectroscopic ellipsometry. Atomic hydrogen reacts swith InN causin ...
Cite
Journal articleJournal of Vacuum Science and Technology B Microelectronics and Nanometer Structures · June 11, 2007
Spectroscopic ellipsometry has been used to monitor in real time and in situ the molecular beam epitaxial growth of InN on SiC substrates. A three-step growth process consisting of (i) low-temperature (200 °C) nitridation of the SiC surface, (ii) low-tempe ...
Full textCite
Journal articleJournal of Vacuum Science and Technology B Microelectronics and Nanometer Structures · June 11, 2007
Spectroscopic ellipsometry installed on a GEN-II plasma assisted molecular beam epitaxy machine has been shown to be an effective in situ real time tool for monitoring the kinetics of gallium adlayer adsorption/desorption on the GaN surface. In this work, ...
Full textCite
Journal articleJournal of Vacuum Science and Technology B Microelectronics and Nanometer Structures · June 11, 2007
The influence of arsenic species (As2 or As4) on compositionally graded In Asx P1-x buffer layers (x=0.15-0.8) grown by molecular beam epitaxy on InP is investigated. It was found that As2 has a higher incorporation rate than As4. Anisotropic strain relaxa ...
Full textCite
Journal articleJournal of Crystal Growth · March 1, 2007
The chemical nature of the GaN surface combined with the bulk and surface electronic structure opens new potential application areas for this material. The nature of specific organic-GaN was developed for two cases in which the surface electronic structure ...
Full textCite
Journal articleApplied Physics Letters · January 15, 2007
InN epitaxial films were grown by N2 plasma-assisted molecular beam epitaxy on 4H- and 6H-SiC substrates using low-temperature InN nucleation layers. InN films grown at various In fluxes under the In-rich regime show improved crystal quality, surface morph ...
Full textCite
Journal articleIEEE Transactions on Education · 2007
The Electrical and Computer Engineering (ECE) Department at Duke University, Durham, NC, is undergoing extensive curriculum revisions that incorporate novel content, organization, and teaching methods. The cornerstone of the new curriculum is a theme-based ...
Full textCite
Journal articleJournal Of Vacuum Science \& Technology B · 2007
The surface m orphology of InAs quantum dots (QDs) on undoped Si (100) shows a strong dependency on surface pretreatments, with as much as 30\% difference in island density with different size distributions. Lowering the V/III fluxes ratio (5 8: 1 to 10: 1 ...
Cite
Journal articleJournal Of Vacuum Science \& Technology B · 2007
The evolution of the surface plasmon resonance of Al, Ga, and In deposited by molecular beam epitaxy on GaN surfaces was monitored in real-time using spectroscopic ellipsometry. The correlation between the metal plasmon resonance modes, the particle size, ...
Cite
Journal articleApplied Physics Letters · 2007
Liquid Ga nanoparticles have been deposited on sapphire substrates at room temperature. The optical evolution of Ga nanoparticle surface plasmon resonance during deposition has been characterized by in situ real-time spectroscopic ellipsometry to control a ...
Full textLink to itemCite
Journal articleApplied Physics Letters · 2007
p -type InGaAsSi heterojunctions were fabricated through a wafer fusion bonding process. The relative band alignment between the two materials at the heterointerface was determined using current-voltage (I-V) measurements and applying thermionic emission-d ...
Full textCite
Journal articleApplied Physics Letters · November 13, 2006
In situ spectroscopic ellipsometry kinetic characterization is used to monitor the behavior of Ga atoms during and after Ga flux impingement upon a (0001) GaN surface at various temperatures in the range of 680-750 °C. The observed saturation of the pseudo ...
Full textCite
Journal articleApplied Surface Science · October 2006
GaN is grown on Si-face 4H-SiC(001) substrates using remote plasma-assisted methods including metalorganic chemical vapour deposition (RP-MOCVD) and molecular beam epitaxy (MBE). Real time spectroscopic ellipsometry is used for monitoring all the steps of ...
Cite
Journal articleApplied Surface Science · October 2006
We have estimated the threading dislocation density and type via X-ray diffraction and Williamson-Hall analysis to elicit qualitative information directly related to the electrical and optical quality of GaN epitaxial layers grown by PAMBE on 4H- and 6H-Si ...
Cite
Journal articlePhysica Status Solidi C Current Topics in Solid State Physics · July 31, 2006
The growth of GaN by plasma assisted molecular beam epitaxy on GaN template substrates (GaN on sapphire) is investigated with in-situ multi-channel spectroscopic ellipsometry. Growth is performed under various Ga/N flux ratios at growth temperatures in the ...
Full textCite
Journal articleApplied Physics Letters · July 28, 2006
A study of strained InAs-Al xGa 1-xAs ySb 1-y quantum well structures produced by molecular beam epitaxy is presented. The ability to manipulate quantum well strain by way of the Al xGa 1-xA ...
Full textCite
Journal articleJournal of Applied Physics · July 26, 2006
As-for-Sb and Sb-for-As anion exchange reactions have been investigated by the exposure of GaSb surfaces to As 2 and As 4 species and by the exposure of GaAs to Sb 2, respectively. The effect of surface temperature, anion s ...
Full textCite
Journal articleApplied Physics Letters · July 2006
A study of strained InAs-AlxGa1-xAsySb1-y quantum well structures produced by molecular beam epitaxy is presented. The ability to manipulate quantum well strain by way of the AlxGa1-xAsySb1-y buffer is examined using statistical experimental design. Result ...
Cite
Journal articleMaterials Research Society Symposium Proceedings · May 15, 2006
The interaction of InN epitaxial films grown by r.f. plasma assisted molecular beam epitaxy with atomic hydrogen and nitrogen, produced by remote r.f. H2 and N2 plasmas, is investigated. InN strongly reacts with both atomic hydrogen a ...
Cite
Journal articleJournal of Applied Physics · May 1, 2006
The fundamental chemical and kinetic surface processes governing the P-for-As exchange reaction during epitaxial layer synthesis are investigated. Exposure of a GaAs surface to phosphorus molecular beams (P2) is carried out to create superlattice structure ...
Full textCite
Journal articlePhysica Status Solidi A Applications and Materials Science · May 1, 2006
GaN has been grown directly on the Si-face 4H-SiC(0001) substrates using remote plasma-assisted metal-organic chemical vapour deposition (RP-MOCVD) with UV-light irradiation. The effects of substrate pre-treatments and UV-photoirradiation of the growth sur ...
Full textCite
Journal articleApplied Physics Letters · March 20, 2006
The complex dielectric function of hexagonal InN has been determined in the 0.72-6.50 eV photon energy range using spectroscopic ellipsometry. The InN films have been synthesized using molecular beam epitaxy on Si-face 6H-SiC (0001) substrates. The fundame ...
Full textCite
Journal articleJournal of Crystal Growth · January 15, 2006
Indium-arsenide (InAs)-based devices are promising for next generation electronic and optoelectronic applications. Improving these devices requires greater control of the InAs quantum well properties, which in part, are related to the strain induced from t ...
Full textCite
Journal articlePhysica Status Solidi C: Current Topics in Solid State Physics · 2006
We have investigated the growth of InN films by plasma assisted molecular beam epitaxy on the Si-face of 6H-SiC(0001). Growth is performed under In-rich conditions using a two-step process consisting of the deposition of a thin, low-temperature 350°C I ...
Full textLink to itemCite
Journal articleApplied Surface Science · 2006
GaN is grown on Si-face 4H-SiC(0 0 0 1) substrates using remote plasma-assisted methods including metalorganic chemical vapour deposition (RP-MOCVD) and molecular beam epitaxy (MBE). Real time spectroscopic ellipsometry is used for monitoring all the steps ...
Full textLink to itemCite
Journal articleApplied Surface Science · 2006
We have estimated the threading dislocation density and type via X-ray diffraction and Williamson-Hall analysis to elicit qualitative information directly related to the electrical and optical quality of GaN epitaxial layers grown by PAMBE on 4H- and 6H-Si ...
Full textLink to itemCite
Journal articleAppl. Phys. Lett. (USA) · 2006
A trend of increased near-surface valence band maximum band bending with increasing O/Ga relative fraction was observed, extrapolating to 2.7 eV±0.1 eV for pristine GaN surfaces (0% O 1s peak area). This trend of apparent oxide overlayer coverage af ...
Full textLink to itemCite
Journal articleJournal of Electronic Materials · 2006
InAs heterojunction bipolar transistors (HBTs) are promising candidates for low power and high frequency (THz) device applications due to their small bandgap, high electron mobility, and high saturation drift velocity. However, doping limits such as the tr ...
Cite
Journal articleApplied Physics Letters · 2006
GaN epitaxial layers have been grown by plasma-assisted molecular beam epitaxy on Si-face 4H-and 6H-SiC(0001)Si substrates. The impact of the SiC surface preparation and oxide removal achieved via a Ga flash-off process followed by nitridation on the struc ...
Full textLink to itemCite
Journal articleJournal of Vacuum Science and Technology B Microelectronics and Nanometer Structures · December 1, 2005
We report the impact of both unintentional and intentional nitridation of 6H-SiC (0001)Si substrates on the epitaxial growth of GaN by molecular-beam epitaxy. The unintentional nitridation is dependent upon the details of the pregrowth Ga flash-off process ...
Full textCite
Journal articleJournal of Crystal Growth · October 15, 2005
The heteroepitaxy of GaN directly grown directly on Si-face 4H-SiC(0 0 0 1) by molecular beam epitaxy is explored and characterized using in situ spectroscopic ellipsometry. Critical steps of the process, including SiC substrate cleaning, substrate termina ...
Full textCite
Journal articleEPJ Applied Physics · September 1, 2005
GaN is grown on Si-face 4H-SiC(0001) substrates using remote plasma-assisted metalorganic chemical vapour deposition (RP-MOCVD). The pre-dissociation of nitrogen by the remote plasma is used for lowering the deposition temperature to approximately 700°C. R ...
Full textCite
Journal articleProceedings of SPIE the International Society for Optical Engineering · July 21, 2005
Practical, packaged photodetectors (PDs) must be interfaced to bias and transmission lines, which introduce parasitics. These parasitics (resistance, capacitance and inductance) can be used to shape the temporal and frequency response of packaged photodete ...
Full textCite
Journal articleApplied Physics Letters · January 10, 2005
Thin layers of AlN and GaN have been grown by plasma-assisted molecular beam epitaxy on Si-face 4H- and 6H- SiC (0001)Si substrates. The impact of the SiC surface preparation and oxide removal via a Ga deposition and desorption process on the chemistry and ...
Full textCite
Journal articleJournal of Electronic Materials · 2005
The interaction of 4H-SiC(0001)Si and 6H-SiC(0001)Si surfaces with atomic hydrogen and atomic nitrogen produced by remote radio-frequency plasmas is investigated. The kinetics of the surface modifications is monitored in real time using ellipsometry, while ...
Cite
Journal articleCrystal Research and Technology · 2005
We report on the impact of the preparation of the Si-face 4H-SiC(0001) Si substrate using a Ga flash-off process on the epitaxial growth of GaN by plasma-assisted molecular beam epitaxy. The nucleation, as well as the resultant structural and morphological ...
Full textLink to itemCite
Journal articleIEEE Spectr. (USA) · 2005
This paper describes Applied Material's wafer polishing technology, called electrochemical mechanical planarization (ECMP). ECMP is the answer to the problems of electropolishing and chemical mechanical planarization (CMP) of the chip-making process: manuf ...
Full textLink to itemCite
Journal articleConference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS · December 1, 2004
The enhancement of the impulse response and capacitance performance of thin film InGaAs metal-semiconductor-metal (MSM) was carried out through etching. The capacitances of the MSM were measured using scattering parameter measurements using a lightwave com ...
Cite
Journal articleConference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS · December 1, 2004
A wideband preamplifier was designed and fabricated using a 0.18 μm CMOS technology. The amplifier was heterogeneously integrated with a thin film InGaAs inverted photodetector. A successful demonstration at a bit rate of 10 Gbps was reported. All the stag ...
Cite
Journal articleApplied Physics Letters · November 1, 2004
The interaction of atomic nitrogen with 4H- and 6H-SiC(0001) Si-face surfaces is investigated. Clean and atomically smooth terraced surfaces obtained by in situ cleaning using atomic hydrogen have been exposed at 200°C and 750°C to atomic nitrogen produced ...
Full textCite
Journal articleApplied Surface Science · August 15, 2004
GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin pr ...
Full textCite
Journal articleJournal of Vacuum Science and Technology B Microelectronics and Nanometer Structures · July 1, 2004
As/Sb and Sb/As anion exchange reactions to control heterojunction interface intermixing in mixed anion structure were investigated. The substrate temperature, anion flux exposure time, and incident anion molecular species were analyzed. The characterizati ...
Full textCite
Journal articleIEEE Journal on Selected Topics in Quantum Electronics · July 1, 2004
Inverted metal-semiconductor-metal (I-MSM) photodetectors, which are thin-film MSMs with the growth substrate removed and fingers on the bottom of the device (to eliminate finger shadowing to enhance responsivity), are reported herein for high-speed high-e ...
Full textCite
Journal articleJournal of Applied Physics · June 15, 2004
The polarity of GaN epitaxial films and its impact on the interaction of GaN surfaces with atomic hydrogen were discussed. GaN epilayers were grown by radio frequency plasma molecular beam epitaxy (MBE) with both GaN and AlN buffer layers. It was found tha ...
Full textCite
Journal articleApplied Physics Letters · May 17, 2004
The interactions of SiC surfaces with atomic hydrogen produced by a remote rf plasma source was investigated. Spectroscopic ellipsometry was used for the in situ monitoring of the low and high temperature impact on chemical and morphological surface modifi ...
Full textCite
Journal articleThin Solid Films · May 1, 2004
Pseudodielectric function spectra of GaAs/GaSb1-yAsy, GaSb/GaAsySb1-y and GaAs/GaPyAs1-y superlattices have been measured by spectroscopic ellipsometry in the 0.75-5.5 eV photon energy range ...
Full textCite
Journal articleJournal of Crystal Growth · April 15, 2004
Intrinsic sheet charge levels in unintentionally doped AlSb/InAs/AlSb quantum wells are reproducibly ∼1012/cm2. While these levels are suitable for depletion-mode operation, realizing enhancement-mode devices ultimately depends on the ...
Full textCite
Journal articleJournal of Crystal Growth · 2004
The chemistry and kinetics of lithium gallate (LGO) substrates during nitridation are investigated. Nitridation experiments have been carried out using two remote nitrogen RF plasma sources: in an MBE system and in a remote plasma MOCVD system. The differe ...
Full textLink to itemCite
Journal articleProceedings of SPIE - The International Society for Optical Engineering · 2004
Linear statistical models have been generated to predict the performance of metal-semiconductor-metal (MSM) PDs for multi-gigabit optical interconnections. The models estimate the bandwidth and responsivity of the MSM PDs based on the input factors: absorb ...
Full textLink to itemCite
Journal articleProceedings of SPIE - The International Society for Optical Engineering · 2004
As optoelectronic devices increase in speed, the measurement system used to characterize these devices must have sufficient bandwidth and minimum parasitic loading during test to accurately determine the intrinsic performance of the device under test. Conv ...
Full textLink to itemCite
Journal articleConference Proceedings International Conference on Indium Phosphide and Related Materials · July 25, 2003
The transfer and separation of device layers or even finished device structures from a III-V substrate allows can lead to higher utilization of bulk wafer and the incorporation of multiple materials onto a single larger wafer. Depending on thethermal budge ...
Cite
Journal articleJournal of Crystal Growth · May 1, 2003
The polarity of GaN epitaxial layers grown on GaN and AlN buffer layers was investigated and found to be dependent on nitridation temperature over the range of 200-700°C. When low temperature (LT), 500°C, GaN buffer layers are used, GaN epitaxial layers gr ...
Full textCite
Journal articleJournal of Crystal Growth · May 1, 2003
In this paper, we report microstructural characterization of InAs/GaAs quantum dots grown by molecular beam epitaxy. The InAs islands were annealed in a range of temperatures under Pa flux. Prior to annealing, it is shown that the InAs islands are mainly l ...
Full textCite
Journal articleIEEE Journal on Selected Topics in Quantum Electronics · March 1, 2003
Emerging techniques for integrating optoelectronic (OE) devices, analog interface circuitry, RF circuitry, and digital logic into ultra-mixed signal systems offers approaches toward and demonstrations of integrated optical interconnections in electrical mi ...
Full textCite
Journal articleIEEE Spectr. (USA) · 2003
The discovery of ceramic superconductors in 1986 sparked dreams of levitating trains, cheap electric power, and desktop medical scanners. Some savvy investors instead set their sights on superconducting microelectronics. In 1987, a group that included Inte ...
Cite
Journal articleSolid-State Electronics · 2003
While growth of wide bandgap semiconductor materials on crystalline oxides (sapphire, lithium gallate, lithium aluminate, zinc oxide and others) has become routine, growth of crystalline oxides on wide bandgap materials remains challenging and minimally ex ...
Full textLink to itemCite
Journal articleOSA Trends in Optics and Photonics Series · January 1, 2003
Thin film InGaAs photodetectors for heterogeneously integrated optoelectronics are demonstrated with low dark current (0.16nA at 5V), and high speed (3ps rise time, 6.3ps FWHM), large area (40 μm), and good responsivity (0.19A/W at 5V). ...
Cite
Journal articleMaterials Research Society Symposium Proceedings · January 1, 2003
The interaction of Be-, Mg-, and Si- doped GaN epitaxial films with atomic hydrogen, produced by a remote r.f. hydrogen plasma, is investigated. The kinetics of the interaction is monitored in real time by spectroscopic ellipsometry through the measurement ...
Full textCite
Journal articleMaterials Research Society Symposium Proceedings · January 1, 2003
GaPyAs1-y/GaAs, GaAsySbi-y/GaSb and GaSbyAs1-y/GaAs superlattices (SLs) grown by MBE, by exposure of GaAs to phosphorus and antimonide fluxes, and by exposure of GaSb to an arsenic flux, res ...
Full textCite
Journal articleMaterials Research Society Symposium Proceedings · January 1, 2003
The effect of the buffer layers on the subsequent GaN epitaxial layers and electrical properties of AlGaN/AlN/GaN heterojunction structures nitrided at various temperatures was investigated. For AlN buffer layers, two different growth conditions of AlN buf ...
Full textCite
Journal articleProceedings IEEE Lester Eastman Conference on High Performance Devices · December 1, 2002
We have investigated the influence of low temperature wafer bonding on the electrical and structural characteristics of InAlAs/InGaAs n-p heterojunction structures with similar structure to an emitter-base junction of InAlAs/InGaAs HBTs. Those n-p junction ...
Cite
Journal articleJournal of Crystal Growth · July 1, 2002
A thermodynamic approach is presented to assess the extent of anion exchange reactions during the heteroepitaxy (molecular beam epitaxy) of dissimilar anion III-V compound semiconductor structures. It is shown that the extent of anion exchange can be predi ...
Full textCite
Journal articleJournal of Vacuum Science and Technology B Microelectronics and Nanometer Structures · July 1, 2002
Anion exchange at the interfaces of mixed anion heterostructures were studied and characterized via high-resolution x-ray diffraction analysis of anion exposed static surfaces. Superlattices were formed primarily due to anion exchange and related processes ...
Full textCite
Journal articleSolid State Communications · June 1, 2002
P/As anion exchange is exploited to modify stacked InAs/GaAs quantum dot structures grown by molecular beam epitaxy (MBE). It is shown that the vertical alignment and size uniformity can be remarkably improved via P/As anion exchange. This, therefore, demo ...
Full textCite
Journal articleJournal of Vacuum Science and Technology B Microelectronics and Nanometer Structures · May 1, 2002
The effects of sapphire nitridation temperature on the properties of GaN grown by radiofrequency (rf) plasma assisted molecular-beam epitaxy (MBE) were discussed. It was found that the optical and structural characteristics of GaN epitaxial layers were dra ...
Full textCite
Journal articleJournal of Applied Physics · February 15, 2002
The effect of sapphire nitridation temperature on the chemistry and microstructure of the sapphire substrate/GaN interface, nucleation layer, and of the GaN epilayers grown by rf plasma assisted molecular beam epitaxy is investigated. It is found that a sa ...
Full textCite
Journal articleJournal of Applied Physics · February 1, 2002
The impact of the nitridation temperature on sapphire/GaN interface modifications and the structural, chemical, and optical properties of GaN epitaxial thin films with N plasma radicals is investigated. Based on ex situ spectroscopic ellipsometry and x-ray ...
Full textCite
Journal articleIEEE Photonics Technology Letters · February 1, 2002
The heterogeneous integration of GaN thin-film metal-semiconductor-metal (MSM) photodetectors onto a host substrate of SiO2-Si is reported herein. Thin-film GaN photodetectors were separated from the lithium gallate (LiGaO2) growth su ...
Full textCite
Journal articleJournal of Electronic Materials · January 1, 2002
The InP-based AlInAs-GaAsSb-GaInAs heterojunction bipolar transistors (HBTs) have been grown by solid-source molecular-beam epitaxy (SSMBE). Since the AlInAs-GaAsSb heterojunction has a type-II (staggered) band lineup, the conduction-band discontinuity is ...
Full textCite
Journal articlePhysica Status Solidi (A) Applied Research · 2002
GaN heteroepitaxial growth on sapphire (0001) substrates was carried out by both radio-frequency (rf) remote plasma metalorganic chemical vapor deposition (RP-MOCVD) and molecular beam epitaxy (MBE). A multistep growth process including substrate plasma cl ...
Full textLink to itemCite
Journal articleJournal of Electronic Materials · January 1, 2002
Strained AlxIn1-xAs/Ga0.47In0.53As heterojunction N-p+ diodes and heterojunction bipolar transistors (HBTs) have been grown on InP substrates by solid-source molecular-beam epitaxy, fabricated, and cha ...
Full textCite
Journal articlePacific Rim Conference on Lasers and Electro Optics CLEO Technical Digest · January 1, 2002
The metal-semiconductor-metal (MSM) photodetector dark current and responsivity results for the growth of gallium nitride on lithium gallate substrates were reported. The heterogeneous integration of thin film gallium nitride MSM detectors onto host substr ...
Cite
Journal articleSolid State Electronics · January 1, 2002
This paper presents experiments that examined the formation of the InAs/AlSb interface in high electron mobility transistor (HEMT) devices grown by molecular beam epitaxy (MBE). At the interface, indium barrier thickness and substrate temperature were vari ...
Full textCite
Journal articlePhysica Status Solidi (A) Applied Research · 2002
A new domain of growth experimentally observed in conditions of expected fast etching by HCl ensures growth rates of 50-60 μm/h without parasitic GaN deposit by using the suitable temperature profile. In these conditions, different thicknesses from 8 to 52 ...
Full textCite
Journal articleMaterials Research Society Symposium Proceedings · January 1, 2002
Herein, we discuss the use of a novel new substrate for III-Nitride epitaxy, Lithium Niobate. It is shown that Lithium Niobate (LN) has a smaller lattice mismatch to III-Nitrides than sapphire and can be used to control the polarity of III-Nitride films gr ...
Full textCite
Journal articleMaterials Research Society Symposium Proceedings · January 1, 2002
Radiative recombination processes in bulk InGaN grown by molecular beam epitaxy (MBE) on lithium gallate (LGO or LiGaO2) substrates were investigated using microscopic PL and time-resolved photoluminescence (TRPL). The improved structural qualit ...
Full textCite
Journal articleMaterials Research Society Symposium Proceedings · January 1, 2002
The use of dry hydrogen plasma etching is evaluated for determination of GaN polarity and critically compared to wet etching in NaOH. It is shown that hydrogen plasma etching is effective in revealing inversion domains (IDs) and some types of dislocations. ...
Full textCite
Journal articleMaterials Science and Engineering B · December 19, 2001
The drive for the heterogeneous integration of materials has led to significant advances in materials and device processing, and in the understanding of defect production and control during epitaxy. Heterogeneous integration is driven by microelectronic an ...
Full textCite
Journal articleASEE Annual Conference Proceedings · December 1, 2001
The Georgia Institute of Technology, the lead institution in the consortium due to its reputation, is discussed. The Georgia Tech InGEAR staff convened an Advisory Committee consisting of over 20 Georgia Tech faculty and staff who were instrumental in desi ...
Cite
Journal articleThin Solid Films · November 1, 2001
The microstructure of solid source molecular beam epitaxy (MBE) lattice-matched GaInP-GaAs heterostructures has been studied by transmission electron microscopy (TEM). It is shown that atomic-scale roughening occurs in the first several (∼five) interfaces, ...
Full textCite
Journal articleJournal of Crystal Growth · September 1, 2001
We present a comprehensive study of the electrical, optical, and structural properties of wurtzite GaN films grown under various initial growth conditions The GaN films were grown directly on sapphire substrates using GaN nucleation layers by a Riber 3200 ...
Full textCite
Journal articleApplied Physics Letters · August 27, 2001
The growth, fabrication, and characterization of ultraviolet metal-semiconductor-metal (MSM) GaN photodetectors grown on LiGaO2 by molecular-beam epitaxy are reported herein. GaN/LiGaO2 material with dislocation densities of approxima ...
Full textCite
Journal articleJournal of Vacuum Science and Technology B Microelectronics and Nanometer Structures · July 1, 2001
Anion anneals have different effects on the quantum dot size distributions and vertical self-assembly. Phosphorus anneal at 300°C can enhance the uniformity of the dot size distribution for both 2 and 3 ML multilayer structures. TEM shows vertically aligne ...
Full textCite
Journal articlePhysica Status Solidi (A) Applied Research · 2001
The effect of c-plane sapphire nitridation upon exposure to a rf N2 plasma at temperatures in the range 100-700°C on the quality of GaN epilayers grown by MBE is investigated. A homogeneous A1N layer is formed at 200°C. Nitridation at higher temperatures c ...
Full textCite
Journal articlePhys. Status Solidi A (Germany) · 2001
The effect of c-plane sapphire nitridation upon exposure to an rf N2 plasma at temperatures in the range 100-700°C on the quality of GaN epilayers grown by MBE is investigated. A homogeneous AlN layer is formed at 200°C. Nitridation at higher tempe ...
Full textLink to itemCite
Journal articleJournal of Electronic Materials · January 1, 2001
The structural properties and surface morphology of AlGaN/GaN structures grown on LiGaO2 (LGO), sapphire, and hydride vapor phase epitaxy (HVPE)-grown GaN templates are compared. AlGaN grown on LGO substrates shows the narrowest x-ray full width ...
Full textCite
Journal articlePhys. Status Solidi A (Germany) · 2001
We discuss recent advances in the growth of III-nitride materials and devices, which include: (i) The reduction of the near-surface threading dislocation density in GaN on lithium gallate (LGO) to ≈2×107 cm-2. (ii) The demonstration of GaN, 50&tim ...
Full textLink to itemCite
Journal articleTechnical Digest International Electron Devices Meeting · January 1, 2001
Heterogeneous integration of dissimilar materials and devices is necessary for the continued advancement of electronic and optoelectronic systems. A range of processes has been developed in recent years that will enable system integration and advanced pack ...
Full textCite
Journal articleProceedings Electronic Components and Technology Conference · January 1, 2001
The increasing demand for high bandwidth, low latency I/O in gigascale systems is challenging current packaging technology. Optoelectronic I/O offers needed performance, but presents new challenges in mixed signal (digital, analog, optical, RF) design and ...
Full textCite
Journal articleApplied Physics Letters · December 25, 2000
We describe dramatically decreased Mg incorporation in GaN above a critical Mg flux. Secondary ion mass spectroscopy analysis showed a linear increase in Mg concentration up to a flux equivalent to 8.0×10-10 Torr beam equivalent pressure (BEP) a ...
Full textCite
Journal articleProceedings of SPIE the International Society for Optical Engineering · December 1, 2000
Smart photonics, the integration of optoelectronic devices with electronic circuits and systems, has growing applications in many fields, one of which is computing. An exploration of the opportunities, integration technologies, and some recent results usin ...
Cite
Journal articleConference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS · December 1, 2000
An overview is given on the hybrid integration of a thin film large area, low capacitance InGaAsP/InP inverted metal-semiconductor-metal photodetector onto a Si CMOS differential receiver circuit. The integrated receiver has a measured bit-error-rate (BER) ...
Cite
Journal articleProceedings Electronic Components and Technology Conference · December 1, 2000
High frequency signal distribution in HDI/HDW substrates can be achieved using optical interconnections. To realize effective milli- and micro-haul interconnections on these substrates, the hybrid integration of independently optimized interface circuits a ...
Cite
Journal articleAmerican Society of Mechanical Engineers Heat Transfer Division Publication HTD · December 1, 2000
This paper presents the systematic characterization of the molecular beam epitaxy (MBE) process to quantitatively model the effects of process conditions on film qualities. A five-layer, undoped AlGaAs and InGaAs single quantum well structure grown on a Ga ...
Cite
Journal articleConference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS · December 1, 2000
GaN-based materials and devices are drawing significant interest for ultraviolet and blue optical device applications, and high power electronic device applications. An alternative approach toward GaN thin film separation and integration on dissimilar mate ...
Cite
Journal articleIEEE International Symposium on Compound Semiconductors Proceedings · December 1, 2000
InGaAs/AlInAs HEMT structures have been grown on oxide-bonded InGaAs substrates. De-oxidation and growth conditions are developed that enable good electrical properties. The highest electron mobility obtained was 7258 cm2/V at 300K. The surface ...
Cite
Journal articleApplied Surface Science · October 9, 2000
Compliant substrates offer significant promise as a new approach for strain management in semiconductors. The primary application is to produce device-quality highly mismatched materials on dissimilar substrates. Various implementations and processes for a ...
Full textCite
Journal articleApplied Physics Letters · July 10, 2000
A configuration of misfit dislocation dipoles is observed in a Ga0.5In0.5P heterostructure grown by solid-source molecular-beam epitaxy on GaAs. The dipole dislocations are mostly of 60° type, separated by ∼3.5 nm. The dislocations ar ...
Full textCite
Journal articleJournal of Vacuum Science and Technology B Microelectronics and Nanometer Structures · May 1, 2000
The initial growth stage of GaN growth directly on basal plane sapphire substrate is investigated. Statistical experimental design is used for the optimization of processes with a large number of interwoven effects. The effects of growth conditions on elec ...
Full textCite
Journal articleSolid State Electronics · February 1, 2000
Lithium gallate is receiving ever increasing attention as a possible candidate for III-nitride material growth due to its superior lattice match. This paper summarizes the recent, promising results from material growths on lithium gallate including aluminu ...
Full textCite
Journal articleMaterials Science Forum · 2000
AlGaN/GaN heterostructures were grown on LiGaO2 (LGO), sapphire, and hydride vapor phase epitaxy (HVPE) grown GaN substrates. Structural properties and surface morphology of each film was compared. LGO substrates produced the lowest FWHM values for both sy ...
Cite
Journal articleJournal of Electronic Materials · January 1, 2000
We report on the electrical characteristics of the two-dimensional electron gas (2DEG) formed in an InAlAs/InAsxP1-x/InP pseudomorphic composite-channel modulation-doped (MD) structure grown by solid source (arsenic and phosphorus) mo ...
Full textCite
Journal articleMRS Internet Journal of Nitride Semiconductor Research · January 1, 2000
The effect of the initial nitridation of the sapphire substrate on the GaN crystal quality as a function of substrate temperature was studied. GaN layers were grown by plasma-assisted molecular beam epitaxy (MBE) on sapphire substrates nitridated at differ ...
Full textCite
Journal articleJournal of Electronic Materials · January 1, 2000
Compliant substrates offer a new approach for strain management in semiconductors. Various implementations and processes for achieving substrate compliancy have been proposed and demonstrated. These include the use of twist-, glass-, and metal-bonds. A rec ...
Full textCite
Journal articleIEEE Journal on Selected Topics in Quantum Electronics · January 1, 2000
The integration and packaging of optoelectronic devices with electronic circuits and systems has growing application in many fields, ranging from long to micro haul links. An exploration of the opportunities, integration technologies, and some recent resul ...
Full textCite
Journal articleProceedings of SPIE the International Society for Optical Engineering · January 1, 2000
Multidisciplinary team-oriented research is an effective method for investigating systems spanning multiple knowledge areas. Building on cross-functional team strategies developed for highly competitive industries, experts from a variety of technical domai ...
Full textCite
Journal articleJournal of Electronic Materials · January 1, 2000
High-resolution transmission electron microscopy has been employed to study the microstructure of GaAs lattice-matched GaInP heterostructures grown by solid source molecular beam epitaxy. It is found that the GaInP epilayers undergo lateral compositional m ...
Full textCite
Journal articleLEOS Summer Topical Meeting · January 1, 2000
A 'smart' multispectral imaging system that can be fabricated with independently optimized detector arrays and Si CMOS circuits is described. This imager utilizes the heterogeneous integration of thin film GaN (UV), MCT (MWIR), and Si CMOS circuitry to cre ...
Full textCite
Journal articleLEOS Summer Topical Meeting · January 1, 2000
A thin film large area, low capacitance, high responsivity InGaAs/InP inverted metal-semiconductor-metal (I-MSM) was hybrid integrated onto a Si CMOS differential receiver circuit. The integrated receiver demonstrated a bit-error-rate (BER) of 10-11
Cite
Journal articleMaterials Science Forum · 2000
AlGaN/GaN heterostructures were grown on LiGaO2 (LGO), sapphire, and hydride vapor phase epitaxy (HVPE) grown GaN substrates. Structural properties and surface morphology of each film was compared. LGO substrates produced the lowest FWHM values for both sy ...
Cite
Journal articleIEEE Transactions on Semiconductor Manufacturing · January 1, 2000
This paper presents the systematic characterization of the molecular beam epitaxy (MBE) process to quantitatively model the effects of process conditions on film qualities. A five-layer, undoped AlGaAs and InGaAs single quantum well structure grown on a Ga ...
Full textCite
Journal articleConference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS · December 1, 1999
Smart photonics, or the integration of optoelectronic (OE) devices and links with circuitry such as Si complementary metal oxide semiconductor (CMOS) very large scale integrated (VLSI) circuits, can yield both advanced optical links and possibly integrated ...
Cite
Journal articleApplied Physics Letters · May 31, 1999
In this letter, we report on the properties of a AlxGa1-xN/GaN heterostructure grown on LiGaO2. A two-dimensional electron gas (2DEG) is observed with mobility of 731 cm2/V s at room temperature and 2166 cm2 ...
Full textCite
Journal articleJournal of Physics D Applied Physics · May 21, 1999
Lithium gallate (LiGaO2) is gaining increasing attention as a potential substrate for the growth of the important semiconductor GaN. In order to better understand this material we have performed high-resolution double- and triple-axis x-ray diff ...
Full textCite
Journal articleIEEE Journal on Selected Topics in Quantum Electronics · March 1, 1999
We present for the first time a three-dimensional (3-D) Si CMOS interconnection system consisting of three layers of optically interconnected hybrid integrated Si CMOS transceivers. The transceivers were fabricated using 0.8-μm digital Si CMOS foundry circ ...
Full textCite
Journal articleJournal of Applied Physics · January 1, 1999
The growth of InP/InAsxP1-x and InAlAs/InAsxP1-x heterostructures was studied using P and As sources. The As4 flux is incorporated much less efficiently into higher As percentage InAsP due to the highe ...
Full textCite
Journal articleJournal of Electronic Materials · January 1, 1999
InAsP/InP multiquantum well structures were grown by solid source molecular beam epitaxy using either As2 or As4 over a substrate temperature range of 420-535 °C. All quantum wells had similar arsenic compositions with a 2.2% standard ...
Full textCite
Journal articleJournal of Electronic Materials · January 1, 1999
Strained InAsP multiquantum wells (MWQs) were grown on InP(100) substrates by solid source molecular beam epitaxy and were characterized to relate structural and optical quality to growth conditions. The multiquantum wells were grown using either dimer or ...
Full textCite
Journal articleJournal of Crystal Growth · January 1, 1999
Two series of strained InAsP/InP multiquantum wells (MQWs) were grown by solid source molecular beam epitaxy (SSMBE) simultaneously on Fe-doped InP substrates with a growth orientation of either (1 0 0), exact (1 1 1)B, and (1 1 1)B misoriented 1° toward 〈 ...
Full textCite
Journal articleMaterials Research Society Symposium Proceedings · January 1, 1999
Recent results indicate that compliant substrates offer significant promise as a new approach for strain management in semiconductors. The potential applications include 1) the growth of device-quality highly mismatched materials on dissimilar substrates, ...
Full textCite
Journal articleConference Proceedings International Conference on Indium Phosphide and Related Materials · January 1, 1999
We have developed composite-channel InP-InGaAs HEMTs for W-band high power amplifier applications. The optimized 0.15 μm T-gate device demonstrated state-of-the-art gm-Imax combination. It also showed a 1.5 V improvement in on-state a ...
Cite
Journal articleConference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS · December 1, 1998
A new method for making a multiple-wavelength laser array by using strain modulated epitaxy is described. This growth process, which enables growth on a smooth substrate surface while enabling three dimensional band structure engineering, uses a bottom-pat ...
Cite
Journal articleJournal of Vacuum Science and Technology B Microelectronics and Nanometer Structures · January 1, 1998
Compliant substrates offer a new approach to strain management in lattice-mismatched structures. The role of the compliant substrate is to reduce the strain in a mismatched overlayer by sharing the strain via deformation of the substrate, or by nucleating ...
Full textCite
Journal articleJournal of Vacuum Science and Technology B Microelectronics and Nanometer Structures · January 1, 1998
Increasingly self-assembled quantum dots produced by the Stranski-Krastanov growth mode during molecular beam epitaxy are being used for both photonic and electronic devices. In order to fully realize the potential of these nanostructures, control of both ...
Full textCite
Journal articleJ. Electron. Mater. (USA) · 1998
We report on the growth of high structural quality (as determined by X-ray diffraction) GaN on a near lattice matched substrate, lithium gallate (LiGaO2 or LGO). Low temperature growth conditions are described that result in very thin GaN films (<0.3 &m ...
Cite
Journal articleJournal of the Electrochemical Society · January 1, 1998
Lithium gallate (LGO) is an attractive, near lattice matched substrate for the growth of GaN. In addition, LGO substrates provide a convenient route to forming thin films of GaN as used in substrate removal or lift-off processes. We report the wet etching ...
Full textCite
Journal articleJournal of Vacuum Science and Technology B Microelectronics and Nanometer Structures · January 1, 1998
Since we have found that an entire substrate can be chemically removed in less than 5 min and since GaN is impervious to chemical etching, the GaN on lithium gallate (LGO) system is an excellent template (due to near infinite etch selectivity) for developi ...
Full textCite
Journal articleApplied Physics Letters · November 10, 1997
Bottom-patterned compliant substrates can be used to laterally modulate the properties of a mismatched epilayer. At temperatures where strain-dependent growth kinetics are significant, the GaAs bottom pattern compliant substrates affected the growth of str ...
Full textCite
Journal articleApplied Physics Letters · September 8, 1997
A metastability model for GaAs compliant substrates is developed using the compliant substrate partitioning formula and experimental strain relief data. The developed model agrees with compliant substrate strain relief data deduced from double crystal x-ra ...
Full textCite
Journal articleApplied Physics Letters · March 31, 1997
Double crystal x-ray diffraction data is presented from the most extensive compliant substrate experiment to date. Five consecutive InGaAs-GaAs growths were performed simultaneously on GaAs-based thin film compliant substrates and thick reference substrate ...
Full textCite
Journal articleJournal of Parallel and Distributed Computing · February 25, 1997
Through-wafer optoelectronic interconnect offers some architectural alternatives that are not available with wire-based interconnects. In order to compete with wire-based technologies, optoelectronic interconnects must provide reasonable performance in ter ...
Full textCite
Journal articleApplied Physics Letters · January 6, 1997
Critical interdependent effects have been observed in the growth of AlGaAs/InGaAs quantum-well structures by molecular beam epitaxy. It is shown that statistical experimental design is an effective method for quickly optimizing complex device structures. T ...
Full textCite
Journal articleJournal of the Electrochemical Society · January 1, 1997
New properties associated with selective substrate removal have been observed in the application of this technique to GaAs thin film compliant substrates. Citric acid- and NH4OH-based etches are used to selectively etch the GaAs substrate and st ...
Full textCite
Journal articleJournal of Crystal Growth · January 1, 1997
The growth dynamics of the InGaAs/GaAs system have been investigated by desorption mass spectrometry (DMS). Indium desorption spectra indicate the presence of one or two desorption mechanisms depending on the V/III beam equivalent pressure ratio. The activ ...
Full textCite
Journal articleProceedings Electronic Components and Technology Conference · January 1, 1997
In this paper, we present a novel Fourier technique to calculate the emitter-to-fiber coupling efficiency between an incoherent source of arbitrary directivity and a multimode fiber. The technique expresses the 4-D integral that describes the coupling as a ...
Cite
Journal articleJournal of Crystal Growth · 1997
The growth dynamics of the InGaAs/GaAs system have been investigated by desorption mass spectrometry (DMS). Indium desorption spectra indicate the presence of one or two desorption mechanisms depending on the V/III beam equivalent pressure ratio. The activ ...
Cite
Journal articleJournal of Crystal Growth · January 1, 1997
The traditional approach to determine relationships between growth conditions and material properties has rested on the standard experimental approach - varying one parameter while holding all others constant. This technique does not effectively allow the ...
Full textCite
Journal articleJournal of Crystal Growth · January 1, 1997
A RHEED system has been developed that allows real-time monitoring of RHEED information throughout a multilayer growth run with rotation. The machine vision system consists of high-speed image capture hardware coupled with digital signal processing softwar ...
Full textCite
Journal articleJournal of the Electrochemical Society · 1997
New properties associated with selective substrate removal have been observed in the application of this technique to GaAs thin film compliant substrates. Citric acid- and NH 4OH-based etches are used to selectively etch the GaAs substrate and stop on an A ...
Cite
Journal articleMaterials Research Society Symposium Proceedings · January 1, 1997
Thin film compliant substrates can be used to extend the critical thickness in mismatched overlayers. A metastability model has been coupled with recent experimental strain relief data to determine the critical thickness of InGaAs epilayers grown on GaAs c ...
Cite
Journal articleMaterials Research Society Symposium Proceedings · January 1, 1997
The GaN on LGO system is the near perfect template (due to extremely high etch selectivity) for developing a viable thin film/compliant GaN substrate. Herein, we report on our efforts to grow GaN on LGO, including improvement of the microscopic surface mor ...
Full textCite
Journal articleConference Proceedings International Conference on Indium Phosphide and Related Materials · January 1, 1997
InP-based HBTs featuring InP emitters and collectors are compared to those containing InAlAs emitters and InGaAs collectors. The InP emitter HBTs exhibited excellent β and no As-P intermixing. The InP collector HBTs showed two orders of magnitude improveme ...
Cite
Journal articleApplied Physics Letters · December 1, 1996
We have observed a degradation in the epitaxial layer quality of AlInAs when it is grown by molecular beam epitaxy at a substrate temperature of about 400°C compared to that for alloys grown at 300 and 500°C. The barrier height and ideality factor of Ti- a ...
Full textCite
Journal articleInternational Conference on Massively Parallel Processing Using Optical Interconnections MPPOI Proceedings · December 1, 1996
Focal plane processing applications present a growing computing need for portable telecomputing and videoputing systems. This paper demonstrates the integration of digital processing, analog interface circuitry, and thin film OE devices into a compact comp ...
Cite
Journal articleProceedings of the IEEE CPMT International Electronic Manufacturing Technology IEMT Symposium · December 1, 1996
This paper presents a statistically designed experiment for systematic characterization of the molecular beam epitaxy (MBE) process to quantitatively describe the effects of process conditions on the qualities of grown films. This methodology is applied to ...
Cite
Journal articleApplied Physics Letters · July 8, 1996
Thin compliant growth substrates have been used to reduce the strain in lattice-mismatched overlayers during epitaxial growth. This letter reports a new thin compliant substrate technology which allows these thin substrates to be patterned on the bottom, b ...
Full textCite
Journal articleChem. Phys. Lett. (Netherlands) · 1996
Small-angle neutron scattering is used to monitor microphase formation in the solid state in equimolar binary hydrocarbon systems CnH2n+2:CmD2m+2 for selected n=20-34 and m=36. Microphase formation is maximum for n=28 and negligible for n=20, 32 and 34. n= ...
Full textLink to itemCite
Journal articleJournal of Vacuum Science and Technology B Microelectronics and Nanometer Structures · January 1, 1996
Bonded, thin film compliant substrates can be used to reduce the strain in a lattice-mismatched overlayer during epitaxial growth. We have presented an initial demonstration of the use of thin film GaAs compliant substrates fabricated by epitaxial liftoff ...
Full textCite
Journal articleJournal of Electronic Materials · January 1, 1996
Compliant substrates allow a new approach to the growth of strained epitaxial layers, in which part of the strain is accommodated in the substrate. In this article compliant substrates are discussed and a new compliant substrate technology based on bonded ...
Full textCite
Journal articleInternational Conference on Massively Parallel Processing Using Optical Interconnections MPPOI Proceedings · December 1, 1995
This paper presents several design issues associated with the implementation of a three dimensional optically interconnected parallel processing system. A technique for improving bit error rate in low power multistage networks is presented. Error detection ...
Cite
Journal articleApplied Physics Letters · December 1, 1995
We have observed a degradation in the epitaxial layer quality of AlInAs when it is grown by molecular beam epitaxy at a substrate temperature of about 400°C compared to that for alloys grown at 300 and 500°C. The barrier height and ideality factor of Ti- a ...
Cite
Journal articleApplied Physics Letters · December 1, 1995
Thin compliant growth substrates have been used to reduce the strain in lattice-mismatched overlayers during epitaxial growth. This letter reports a new thin compliant substrate technology which allows these thin substrates to be patterned on the bottom, b ...
Cite
Journal articleProceedings of SPIE the International Society for Optical Engineering · September 15, 1995
The integration of thin film optoelectronic devices with host substrates such as circuits, waveguides, and micromachines offers to the systems engineer the freedom to choose the optimal materials to achieve performance and cost objectives. In essence, the ...
Full textCite
Journal articleIEEE Transactions on Microwave Theory and Techniques · April 1, 1995
We report on the design and measurement of monolithic 155- and 213-GHz quasi-optical oscillators using AlInAs/GaInAs/InP HEMT' s. These results are believed to be the highest frequency three-terminal oscillators reported to date. The indium concentration i ...
Full textCite
Journal articleProceedings of SPIE the International Society for Optical Engineering · January 1, 1995
High frame rate infrared scene generation depends on high performance digital processors that are tightly coupled to infrared emitter arrays. Massively parallel image generation hardware can realize the type of high throughput, high frame rate processing t ...
Cite
Journal articleundefined · December 1, 1994
We present measurements of two InP-Based HEMT MMIC power amplifiers. One operated at 15 GHz, the other at 20 GHz. Both demonstrated > 20 dB gain, > 40% power added efficiency, and > 100 mW output power with < 2 dB of gain compression, simultaneously achiev ...
Cite
Journal articleIEEE International Conferece on Indium Phosphide and Related Materials · 1994
The paper reports the successful attempts at significantly improving the electron mobility in thin channel, device structures with high two-dimensional electron gas (2DEG) concentrations. InGaAs-AlInAs modulation-doped structures were grown by MBE in a Rib ...
Full textLink to itemCite
Journal articleConference Proceedings - International Conference on Indium Phosphide and Related Materials · 1994
The paper reports the successful attempts at significantly improving the electron mobility in thin channel, device structures with high two-dimensional electron gas (2DEG) concentrations. InGaAs-AlInAs modulation-doped structures were grown by MBE in a Rib ...
Cite
Journal articleIEEE Microwave and Guided Wave Letters · January 1, 1994
A high-efficiency power amplifier was developed using 0.15-μm gatelength, InP-based (GalnAs/AlInAs/InP), HEMT MMIC technology. The amplifier demonstrated state-of-the-art performance. The output power at 1-dB compression point was 28 dBm at 44.5 GHz. The c ...
Full textCite
Journal articleApplied Physics Letters · December 1, 1993
An increase of the Al- content of AlInAs layers above that of the composition which is lattice matched to InP (Al0.48In 0.52As) has been shown to lead to increased Schottky barrier height [Lin et al., Appl. Phys. Lett. 49, 1593 (1986) ...
Full textCite
Journal articleApplied Physics Letters · December 1, 1993
The evolution of defect structures and surface reconstruction of Ga 0.47In0.53As epitaxial layers grown by molecular beam epitaxy on InP substrate have been investigated by TEM and RHEED over a wide growth temperature range (150°C≤T
Full textCite
Journal articleJournal of Electronic Materials · December 1, 1993
The structure of InCaAs/InAlAs layers lattice matched to an InP substrate, grown on either (100) or on (110) with a 4° tilt toward [111] at 500 and 300°C has been investigated by transmission electron microscopy. High perfection resulted for the layers gro ...
Full textCite
Journal articleTechnical Digest Gaas IC Symposium Gallium Arsenide Integrated Circuit · December 1, 1993
High-efficiency monolithic Q-band power amplifiers were developed using InP based HEMT MMIC technology. The amplifiers demonstrated state-of-art power performance including 33 percent power-added efficiency and 26 dBm of output power at 44 GHz. This is the ...
Cite
Journal articleProceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits · December 1, 1993
The paper discusses efforts undertaken to find ways for the application of InP high electron mobility transistors. Electric properties of these devices are being improved to be comparable with that of the GaAs based PHEMTs in the critical area of power add ...
Cite
Journal articleIEEE Electron Device Letters · January 1, 1993
We report on the dc and RF performance of δ-doped channel AlInAs/GaInAs on InP power HEMT's. A 450-μm-wide device with a gate length of 0.22 μm has achieved an output power of 150 mW (at the 1-dB gain compression point) with power-added efficiency of 20% a ...
Full textCite
Journal articleMicrow. J. (USA) · 1993
A new type of field-effect transistor (FET), the indium phosphide high electron mobility transistor (InP HEMT), has recently emerged as an attractive candidate for low noise applications at microwave and MM-wave frequencies. It exhibits the lowest noise fi ...
Cite
Journal articleIEEE Microwave and Guided Wave Letters · January 1, 1993
A three-stage monolithic microwave integrated circuit (MMIC) low-noise amplifier (LNA) has been fabricated using 0.15-μm gate-length InP-based (AlInAs—GaInAs) high electron mobility transistor (HEMT) technology. The LNA exhibited less than 0.5-dB noise fig ...
Full textCite
Journal articleJ. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA) · 1993
The etch rates of GaInAs and AlInAs were characterized using a mixture of methane, hydrogen, and argon as a function of self-bias voltage. Effectively infinite etch selectivity between GaInAs and AlInAs was found for voltages below 200 V. This highly selec ...
Full textLink to itemCite
Journal articleIEEE Transactions on Microwave Theory and Techniques · January 1, 1993
In this paper, we report on the state-of-the-art power performance of InP-based HEMT’s at V-band. Power HEMT’s were fabricated using two different material layer structures. The power performances of these HEMT’s were measured at 59 GHz. We were able to ac ...
Full textCite
Journal articleIEEE Microwave and Guided Wave Letters · January 1, 1993
A single stage 20-GHz power amplifier was developed using double-doped AlInAs-GaInAs on InP HEMT. Output power of 516 mW (0.645 W/mm) with power-added efficiency of 47.1% with 7.1-dB gain were obtained from an 800-μ m wide device. The device had a saturate ...
Full textCite
Journal articleElectronics Letters · January 1, 1993
High power-added efficiency microwave power amplifier results are reported for AllnAs/GalnAs on InP HEMTs operated at relatively low power supply voltages (2.5-3V). C-band power amplifiers are reported with power-added efficiencies as high as 67%, and outp ...
Full textCite
Journal articleJ. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA) · 1993
GaInAs lattice matched to InP was grown by molecular-beam epitaxy over a temperature range of 100-450°C and characterized by X-ray diffraction, resistivity, and secondary ion mass spectroscopy, X-ray diffraction analysis indicated the incorporation of ...
Full textLink to itemCite
Journal articleJ. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA) · 1993
GaInAs and AlInAs structures have been grown on on-axis and misoriented [4°-(111) In-plane] (110) InP substrates. In general, the growth on the on-axis substrates shows a high density of defects; while the surface morphology using misoriented substrate ...
Full textLink to itemCite
Journal articleIEEE Trans. Electron Devices (USA) · 1993
Summary form only given. A systematic study of the improvement of Ga0.47In0.53As/Alx In1-xAs HEMT (high electron mobility transistor) breakdown voltage by varying the Schottky layer design and device geometry is presented. The HEMT structure investigated i ...
Full textLink to itemCite
Journal articleIEEE Microwave and Guided Wave Letters · January 1, 1993
Advanced millimeter-wave systems require high-efficiency MMIC power amplifiers to reduce physical size, weight, and prime power consumption. A high-efficiency MMIC power amplifier was developed using 0.15 um InP-based (Al0.48In0.53As/Ga0.47 In0.53 As) HEMT ...
Full textCite
Journal articleIEEE MTT S International Microwave Symposium Digest · January 1, 1993
In this paper we report on the stage-of-the-art power performance of InP-based HEMTs at 59 GHz. Using a 448 μm wide HEMT with a gate-length of 0.15 μm, an output power of 155 mW with 4.9 dB gain, and power-added efficiency of 30.1% were obtained. By power ...
Cite
Journal articleJournal of Applied Physics · December 1, 1992
The effects of high temperature rapid thermal annealing processes on carrier concentration and mobility of bulk AlInAs and AlInAs/GaInAs high electron mobility transistor structures with planar Si doping are studied. At annealing temperatures of 700°C and ...
Full textCite
Journal articleIEEE Transactions on Electron Devices · January 1, 1992
We report on the design and fabrication of a new class of 50-nm self-aligned-gate pseudomorphic Alin As/GalnAs High Electron Mobility Transistors (HEMT’s) with potential for ultra-high-frequency and ultra-low-noise applications. These devices exhibit an ex ...
Full textCite
Journal articleJ. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA) · 1992
GaInAs-AlInAs inverted modulation-doped structures exhibit degraded two-dimensional electron gas (2DEG) transport properties when grown under standard conditions. This results from the surface segregation of Si from the donor layer into the GaInAs channel ...
Full textLink to itemCite
Journal articleIEEE Electron Device Letters · 1992
The authors report on the design and fabrication of a 650-angstrom self-aligned-gate pseudomorphic Al0.48In0.52As/Ga0.20In0.80As high electron mobility transistor (HEMT) with a state-of-the-art current gain cutoff frequency of over 300 GHz. This work clear ...
Full textLink to itemCite
Journal articleElectron device letters · 1992
The authors report on the design and fabrication of a 650-angstrom self-aligned-gate pseudomorphic Al0.48In0.52As/Ga0.20In0.80As high electron mobility transistor (HEMT) with a state-of-the-art current gain cutoff frequency of over 300 GHz. This work clear ...
Cite
Journal articleApplied Physics Letters · December 1, 1991
Inverted modulation doped structures typically exhibit degraded electrical characteristics. For the AlInAs-GaInAs heterojunction system, the reduction in electron mobility for two-dimensional electron gases formed at inverted interfaces can be greater than ...
Full textCite
Journal articleIEEE MTT S International Microwave Symposium Digest · December 1, 1991
The authors report on the development of AlInAs/GaInAs-on-InP power HEMTs (high electron mobility transistors). Output power densities of more than 730 mW/mm and 960 mW/mm with power-added efficiencies (PAE) of 50% and 40%, respectively, were achieved at 1 ...
Cite
Journal articleInstitute of Physics Conference Series · December 1, 1991
High electron mobility transistors fabricated from GaInAs/AlInAs modulation-doped structure currently exhibit the highest current gain cut-off frequency, highest maximum frequency of oscillation and lowest noise figure of any three terminal device. The dat ...
Cite
Journal articleJournal of Crystal Growth · May 2, 1991
Al0.48In0.52As lattice matched to InP and grown by MBE over a temperature range of 250 to 100°C and under an As4 pressure of 1x10-6 to 2x10-5 Torr has been investigated. Over this temperature range of ...
Full textCite
Journal articleElectrotechnology (UK) · 1991
With the increasing demand for microwave circuitry in both the consumer and industrial markets the engineering expertise to develop these techniques is becoming a key issue. The profusion of engineers now being faced with the problems of signal processing ...
Cite
Journal articleActa Crystallogr. A, Found. Crystallogr. (Denmark) · 1991
Monopole electron-density deformations for first- and second-row atoms are obtained using Hirshfeld partitioning of near Hartree-Fock limit electron densities for 28 diatomics. The κ-refinement model [Coppens, Guru Row, Leung, Stevens, Becker and Yan ...
Full textLink to itemCite
Journal articleProceedings of SPIE the International Society for Optical Engineering · December 1, 1990
A novel self-aligned technique for 0.15μm gate length AlInAs-GaInAs HEMTs has been demonstrated. Devices with an oxide sidewall yielded an fT of 177 GHz whereas devices with no sidewall exhibited an fT greater than 250 GHz. The differ ...
Cite
Journal articleElectrotechnology (UK) · 1990
Since the development and implementation of large scale and very large scale integration techniques (LSI and VLSI), manufacturers have become increasingly aware of the damaging and destructive properties of electrostatic discharge (ESD) on semiconductor ma ...
Cite
Journal articleProceedings of the Custom Integrated Circuits Conference · December 1, 1989
High-performance digital integrated circuits have been fabricated for the first time with low-temperature buffer GaAs MESFET technology. The new materials structure eliminates sidegating and light sensitivity, and improves FET performance. Individual 0.2 μ ...
Full textCite
Journal articleTechnical Digest International Electron Devices Meeting · December 1, 1989
A novel self-aligned technique for 0.15-μm-gate-length HEMTs (high electron mobility transistors) has been demonstrated. This technology uses a 0.15-μm-long T-gate structure defined by e-beam lithography with a SiO2 sidewall to implement the sel ...
Cite
Journal articleTechnical Digest International Electron Devices Meeting · December 1, 1989
The scaling of the vertical dimensions of 0.15-μm-gate-length Al0.48In0.52As-Ga0.47In0.53As high-electron-mobility transistors (HEMTs) to reduce their well-known excessive gate leakage current, premature breakdow ...
Cite
Journal articleTechnical Digest Gaas IC Symposium Gallium Arsenide Integrated Circuit · December 1, 1989
A report is presented on the development of a planar low-temperature buffer AlInAs/GaInAs on InP high-electron-mobility transistor (HEMT) technology for use in digital and analog integrated circuits. This technology is attractive for circuit applications b ...
Cite
Journal articleundefined · December 1, 1989
Low-temperature GaAs buffer technology was used to fabricate high-performance 0.2-μm-gate-length, spike-doped GaAs MESFETs. A 400.0-nm low-temperature GaAs buffer was grown by molecular beam epitaxy (MBE) at a substrate temperature of 300°C. The substrate ...
Cite
Journal articleIEEE Transactions on Electron Devices · November 1, 1989
Summary form only given. The authors report a study of the impact of buffer layer design on the characteristics of Al0.48In0.52As-Ga0.47In0.53As HEMTs (high-electron-mobility transistors). The aim of the study is ...
Cite
Journal articleProceedings of the Custom Integrated Circuits Conference · May 1, 1989
High-performance digital integrated circuits have been fabricated with low-temperature buffer GaAs MESFET technology. The materials structure eliminates side-gating and light sensitivity, and improves FET performance. Individual transistors with a 0.2-μm g ...
Cite
Journal articleMicrowave Journal · March 1, 1989
This paper describes the design, fabrication and testing of high speed GaAs MESFET and AlInAs/GaInAs HEMT frequency divider circuits. GaAs MESFET static frequency dividers operate at frequencies up to 18 GHz, and GaAs MESFET dynamic dividers operate at fre ...
Cite
Journal articleIEEE Transactions on Electron Devices · January 1, 1989
Ga0.47ln0.53As-Al0.48In0.52As high electron mobility transistors (HEMT's) were fabricated in material with varying degrees of alloy and interface disorder. The conductivities of the epitaxial layers are highest for material with the smallest amount of inte ...
Full textCite
Journal articleIEEE Transactions on Microwave Theory and Techniques · January 1, 1989
This paper reviews the status of lattice-matched and pseudomorphic AHnAs-GaInAs HEMPs grown on InP substrates. The best lattice-matched devices with 0.1 μm gate length had a transconductance gm = 1080 mS/mm and unity current gain cutoff frequenc ...
Full textCite
Journal articleIEEE Electron Device Letters · January 1, 1989
Low-temperature AlInAs buffer layers have been incorporated in AlInAs-GaInAs HEMT epitaxial layers grown by MBE. A growth temperature of 150°C followed by a short anneal is shown to eliminate kinks in the device I-V characteristic, sidegating, and to reduc ...
Full textCite
Journal articleMicrow. J. (USA) · 1989
The authors describe the design, fabrication and testing of high speed GaAs MESFET and AlInAs-GaInAs HEMT frequency divider circuits. GaAs MESFET static frequency dividers operate at frequencies up to 18 GHz, and GaAs MESFET dynamic dividers operate at fre ...
Cite
Journal articleJ. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA) · 1989
Ga0.47In0.53As and Al0.48In0.52As alloys, lattice matched to InP substrates, are typically grown under conditions (low substrate temperature and high V/III flux ratios) which limit cation surface mobilities. For the (Al,Ga)As system, the growth of material ...
Full textLink to itemCite
Journal articleIEEE Electron Device Letters · January 1, 1989
High-performance digital integrated circuits have been fabricated with low-temperature buffer (LTB) GaAs MESFET technology. Individual 0.2-µm gate length transistors have a gmof 600 mS/mm and an extrapolated fTof 80 GHz. Backgating and light sensitivity ar ...
Full textCite
Journal articleElectron device letters · 1989
AlInAs-GaInAs heterojunction bipolar transistors (HBTs) and static flip-flop frequency dividers have been fabricated. An ft and an fmax of 49 and 62 GHz, respectively, have been achieved in a device with a 2 x 5-μm2 emitter. Current-mode logic (CML) was us ...
Cite
Journal articleApplied Physics Letters · December 1, 1988
GaInAs-AlInAs quantum well structures have been analyzed by low-temperature photoluminescence. The photoluminescence linewidth (full width at half-maximum) of thicker quantum wells (>10 nm) grown directly on AlInAs buffer layers shows that an inverse relat ...
Full textCite
Journal articleTechnical Digest International Electron Devices Meeting · December 1, 1988
The authors report on the DC and RF performance of self-aligned Al0.48In0.52As-Ga0.47In0.53As heterojunction bipolar transistors. The properties that make the AlInAns/GalnAs material system extremely attractive f ...
Cite
Journal articleDigest of Technical Papers IEEE International Solid State Circuits Conference · December 1, 1988
The authors describe the ultrahigh-speed performance of static flip-flop divide-by-two circuits implemented in both buffered FET logic (BFL) and capacitively enhanced logic (CEL) families utilizing 0.2-μm gate-length Al.48In.52As-Ga
Cite
Journal articleIEEE Electron Device Letters · January 1, 1988
Fifteen-stage ring oscillators and static flip-flop frequency dividers have been fabricated with 0.2-μm gate-length AlInAs/GalnAs HEMI technology. The fabricated HEMT devices within the circuits demonstrated a gm of 750 mS/mm and a full channel current of ...
Full textCite
Journal articleApplied Physics Letters · January 1, 1988
The effects of substrate misorientation on the interface quality of Ga 0.47In0.53As/Al0.48In0.52As quantum well structures grown by molecular beam epitaxy lattice matched on InP substrates have been investigated. ...
Full textCite
Journal articleJournal of Applied Physics · January 1, 1988
The quality of GaInAs-AlInAs epitaxial layers is found to be critically dependent on the degree of (100)-InP substrate misorientation. The alloy quality of both materials is improved when the substrate is misoriented 4°off the (100). The heterojunction int ...
Full textCite
Journal articleIEEE Electron Device Letters · January 1, 1988
The performance of long (1.3μm) and short (0.3μm) gate-length Al 0.48 In 0.52 As-Gao 0.47 In 0.53 As high electron mobility transistors (HEMT's) is reported. Transconductances of 465 and 650 mS/mm, respectively, were achieved. The 0.3-μm-long gate-length d ...
Full textCite
Journal articleJ. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA) · 1988
Ga0.47In0.53As-Al0.48In0.52As high-electron-mobility transistors (HEMT's) exhibit high transconductance and gain because of the high conductivities achievable in the structures. The effect of epitaxial layer design (spacer thickness and active channel thic ...
Full textLink to itemCite
Journal articleIEEE Electron Device Letters · January 1, 1988
We report on the microwave performance of Al0.48In0.52As-Ga0.47In0.53As on InP HEMT's with 0.2- and 0.1-μm gate length. Devices of 50μm width exhibited extrinsic transconductances of 800 and 1080 mS/mm, respectively. External fT of 120 and 135 GHz, respect ...
Full textCite
Journal articleTechnical Digest - International Electron Devices Meeting · 1988
The authors report on the epitaxial layer design, device fabrication, and millimeter-wave performance of lattice-matched and pseudomorphic AlInAs-GaInAs HEMTs (high-electron-mobility transistors). The authors fabricated 0.1-μm gate length HEMTs using pseud ...
Cite
Journal articleundefined · December 1, 1987
It is demonstrated that by applying proper scaling techniques, high-performance 0. 1- mu m-gate-length GaAs MESFETs can be routinely fabricated. The noise performance of these devices compares favorably with that of state-of-the-art HEMT structures. The pe ...
Cite
Journal articleIEEE Transactions on Electron Devices · November 1, 1987
The performance of long-gate and short-gate Al//0//. //4//8In//0//. //5//2As-Ga//0//. //4//7In//0//. //5//3As HEMTs fabricated on high-quality MBE (molecular-beam-epitaxially)-grown material is discussed. The device structures were grown lattice-matched to ...
Cite
Journal articleJournal of Crystal Growth · February 2, 1987
Defect free strained layer epitaxy opens possibilities for further improvement on the quantum well two-dimensional electron gas FET (TEGFET) structures grown using the GaInAs/AlInAs on InP materials system. Increased freedom with composition allows for opt ...
Full textCite
Journal articleElectronics Letters · January 1, 1987
We report microwave characterisation of nominally 1 μM gate Al0.48In0.52As/Ga0.47In0.53As (lattice-matched to InP) modulation-doped field-effect transistors MODFETs). The Al0.48In0.52As/Ga0.47In0.53As MODFETs have room-temperature extrinsic transconductanc ...
Full textCite
Journal articleJ. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA) · 1987
Defect free strained layer epitaxy opens possibilities for further improvement on the quantum well two-dimensional electron gas (TEG) structures grown using the GaInAs/AlInAs on InP materials system. Increased freedom with composition allows for optimizing ...
Full textLink to itemCite
Journal articleIEEE Transactions on Electron Devices · 1987
The performance of long-gate and short-gate Al//0//. //4//8In//0//. //5//2As-Ga//0//. //4//7In//0//. //5//3As HEMTs fabricated on high-quality MBE (molecular-beam-epitaxially)-grown material is discussed. The device structures were grown lattice-matched to ...
Cite
Journal articleTechnical Digest International Electron Devices Meeting · January 1, 1987
The authors report on the ultrahigh-speed performance of 15-stage ring oscillators utilizing 0. 2- mu m gate length Al//. //4//8In//. //5//2As-Ga//. //4//7In//. //5//3As HEMTs (high-electron-mobility transistors) fabricated on InP substrates. The AlInAs-Ga ...
Full textCite
Journal articleTechnical Digest International Electron Devices Meeting · December 1, 1986
The authors report on the design, fabrication, and test performance of GaAs MESFETs with 0. 1- mu m gate length. The devices were fabricated on epitaxial material grown by molecular beam epitaxy (MBE) on a Riber 2300 system. The mean features of the design ...
Cite
Journal articleInstitute of Physics Conference Series · December 1, 1986
Depletion- and enhancement-mode Al//0//. //4//8In//0//. //5//2As/Ga//0//. //4//7In//0//. //5//3As modulation doped field effect transistors with 1 mu m gate length have been successfully fabricated by employing a recessed gate structure and an undoped Al// ...
Cite
Journal articleJ. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA) · 1986
Summary for only given. The authors discuss some aspects of the diffusion behavior of Mn in the presence of electric fields. Impurity profiles were measured by using secondary ion mass spectrometry (SIMS). No matrix effects exist for Mn detection in either ...
Full textLink to itemCite
Journal articleJournal of Applied Physics · January 1, 1986
Secondary-ion-mass spectrometry, Hall-effect measurements, and dc I-V characteristics of 1-μm Ga0.47In0.53As-Al 0.48In0.52As high-electron mobility transistor structures indicate that significant diffusion of Si ...
Full textCite
Journal articleundefined · December 1, 1985
1- mu m gate Al//0 //. //4 //8 In//0 //. //5 //2 As/Ga//0 //. //4 //7 In//0 //. //5 //3 As modulation-doped field effect transistors have been successfully fabricated by using a recessed gate structure and an undoped Al//0 //. //4 //8 In//0 //. //5 //2 As ...
Cite
Journal articleJournal of Electronic Materials · May 1, 1985
A number of factors contribute to the high n-type background carrier concentration (high 1015 to low 1016 cm-3) measured in MBE Ga0.47In0.53As lattice-matched to InP. The results of this study indicate ...
Full textCite
Journal articleundefined · December 1, 1984
Impurity outdiffusion, in particular Fe, Mn, and Cr, from Fe-doped InP into GaInAs epitaxial layers during molecular beam epitaxy growth can account for as much as two-thirds of the carrier concentration and can reduce electron mobilities by as much as 40% ...
Cite
Journal articleJournal of Vacuum Science Technology B Microelectronics Processing and Phenomena · April 1, 1983
The potential barrier height in planar-doped barrier structures is particularly sensitive to the concentration of background impurities present in the nominally undoped regions. MBE grown GaInAs lattice matched to InP typically has n-type background carrie ...
Full textCite
