ConferenceConference Record of the IEEE Photovoltaic Specialists Conference · June 14, 2020
Majority and minority carrier properties such as type, density and mobility represent fundamental yet difficult to access parameters governing semiconductor device performance, most notably solar cells. Obtaining this information simultaneously under light ...
Full textCite
ConferenceOptics Infobase Conference Papers · January 1, 2018
Resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) was used to deposit the metal-halide perovskite (MHP), CH<inf>3</inf>NH<inf>3</inf>PbI<inf>3</inf>, and solar cell performance was demonstrated, thereby establis ...
Full textCite
Conference2015 IEEE 42nd Photovoltaic Specialist Conference Pvsc 2015 · December 14, 2015
Kesterite or Cu2ZnSn(Se,S)4 (CZTSSe) is an emerging earth-abundant thin-film solar cell technology with current world record of 12.6% which is still far behind its cousin, the CuInGaSe technology. We investigated Suns-Voc characteristics of our high perfor ...
Full textCite
ConferenceACS National Meeting Book of Abstracts · August 25, 2011
Kesterite Cu2ZnSnS4-ySey (CZTSSe) materials are considered promising for application as thin-film photovoltaic (PV) absorber layers because of appropriate band gap (ranging from 1.0-1.5 eV, as a function of y) and low-cost, ...
Cite
ConferenceConference Record of the IEEE Photovoltaic Specialists Conference · December 20, 2010
Although CuIn1-xGaxSe2-yS2 (CIGS) chalcopyrite and Cu2ZnSn(S,Se)4 (CZTSSe) kesterite-related films offer significant potential for low-cost high-efficiency photovoltaic (PV) devices, the com ...
Full textCite
ConferenceMaterials Research Society Symposium Proceedings · December 1, 2009
With tunable bandgap and demonstrated high efficiency, the chalcopyrite CuInSe2 and its alloys have shown great potential as absorbers for single and multi-junction solar cells. However, the current deposition techniques mostly rely on expensive ...
Cite
ConferenceThin Solid Films · February 2, 2009
A simple solution-based approach for depositing CIGS (Cu-In-Ga-Se/S) absorber layers is discussed, with an emphasis on film characterization, interfacial properties and integration into photovoltaic devices. The process involves incorporating all metal and ...
Full textCite
ConferenceConference Record of the IEEE Photovoltaic Specialists Conference · December 1, 2008
A simple solution-based approach has been developed for CIGS absorber layer deposition, employing hydrazine as the solvent for all metal chalcogenide components. Advantages of the technique include the molecular (rather than nano or microparticle) nature o ...
Full textCite
ConferenceACS National Meeting Book of Abstracts · June 28, 2006
The use of soluble hydrazinium-based metal sulfide and selenide salts for thin-film deposition to include a wider range of metal selenide systems, including one system (CuInSe2) that contains two metals was presented. The CuInSe2 syst ...
Cite
Conference2005 IEEE VLSI Tsa International Symposium on VLSI Technology VLSI Tsa TECH Proceedings of Technical Papers · October 31, 2005
The fabrication of solution-processed thin-film transistors (TFTs), which yield field-effect mobilities >10 cm2/V-sec, is a key challenge for the production of high-performance flexible electronics. This talk addresses a hydrazinium precursor ap ...
Full textCite
ConferenceMolecular Crystals and Liquid Crystals Science and Technology Section A Molecular Crystals and Liquid Crystals · January 1, 2001
The oligothiophene derivative, 5,5‴-bis(aminoethyl) 2,2′:5′,2″:5″, 2‴-quaterthiophene (AEQT), has been incorporated within a lead(II) halide-based perovskite framework. Single crystal X-ray analysis has been used to verify the perovskite framework and exam ...
Full textCite
ConferenceJournal of Low Temperature Physics · April 1, 1994
We report recent NMR results in cuprates. The oxygen Knight shift and the Cu nuclear spin-lattice relaxation rate in Bi2.1Sr1.94Ca0.88Cu2.07O8+δ single crystals revealed a gapless superconducting state ...
Full textCite
ConferencePhysica B Physics of Condensed Matter · February 2, 1994
We report scanning tunneling spectroscopy investigations on in-situ cleaved superconducting Bi2Sr2CaCu2O8 single crystals. Although many investigators report reproducible tunneling studies on high temperature sup ...
Full textCite
ConferencePhysica B Physics of Condensed Matter · February 2, 1994
AC susceptibility and dc magnetization measurements on Bi2Sr2CaCu2O8 (BSCCO) single crystals in a wide range of temperatures clearly show that below the dc irreversibility line the vortex system loss the long ran ...
Full textCite
ConferenceProceedings of SPIE the International Society for Optical Engineering · June 4, 1993
A high resolution scanning Hall probe microscope is used to spatially resolve vortices in high temperature superconducting Bi2Sr2CaCu2O8+δ crystals. We observe a partially ordered vortex lattice at several differ ...
Full textCite
ConferenceSuperconductor Science and Technology · December 1, 1992
The authors have made mechanical oscillator and AC susceptibility measurements in BSCCO single crystals over a wide range of intensities and orientations of the magnetic field. The mechanical measurements show, in addition to the large softening and dissip ...
Full textCite
ConferencePhysica B Physics of Condensed Matter · February 2, 1991
We report observation of hexatic order in Abrikosov flux lattices in very clean crystals of the high-Tc superconductor Bi2.1Sr1.9Ca0.9Cu2O8+δ (BSCCO). Our experiments consist of in situ magn ...
Full textCite
ConferenceJournal of Physics and Chemistry of Solids · January 1, 1991
We report positron 2D-ACAR measurements of superconducting single crystal Bi2Sr2CaCu2O8+δ (unannealed, Te ≈ 90K). The observed anisotropy exhibits a two-fold (rather than four-fold) symmetry, which is ...
Full textCite
ConferencePhysica C Superconductivity and Its Applications · January 1, 1989
Angle-resolved photoemission experiments on single crystals of Bi2(Sr,Ca,La)3Cu2O8 are reported. The data show a dispersionless behaviour of the valence band states as a function of the perpendicular component of ...
Full textCite