Journal articleJ Biomed Opt · May 2018
Diffuse reflectance spectroscopy (DRS) represents a quantitative, noninvasive, nondestructive means of assessing vascular oxygenation, vascularity, and structural properties. However, it is known that such measurements can be influenced by the effects of p ...
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Journal articleEnvironmental management · January 2015
We develop an analytical approach for more systematically analyzing environmental management problems in order to develop strategic plans. This approach can be deployed by agencies, non-profit organizations, corporations, or other organizations and institu ...
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Journal articlePLoS One · 2015
In an ongoing effort to address the clear clinical unmet needs surrounding breast conserving surgery (BCS), our group has developed a next-generation multiplexed optical-fiber-based tool to assess breast tumor margin status during initial surgeries. Specif ...
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Journal articleJournal of Applied Physics · December 1, 1995
The electrical transport properties of simultaneously deposited, B-doped homoepitaxial and polycrystalline diamond thin films have been evaluated by Hall-effect and resistivity measurements over a temperature range of 80-600 K. The same films were later ch ...
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Journal articleThin Solid Films · January 15, 1994
The application of the ion-assisted electron beam deposition technique for the fabrication of contacts on diamond has been evaluated by studying the adhesion of metal films as well as by performing electrical measurements on metal/diamond structures. Metal ...
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Journal articleDiamond and Related Materials · January 1, 1994
The effect of native oxide thickness on the nucleation of diamond was investigated. The initial thickness of the native oxide on Si substrates was varied using three surface treatment methods: ultrasonic scratching, HF acid etching, and a combination of th ...
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Journal articleApplied Physics Letters · December 1, 1993
Hall-effect and resistivity measurements were performed on simultaneously deposited B-doped homoepitaxial and polycrystalline diamond films, as well as a (100)-oriented type-IIb natural diamond crystal, over a temperature range of 140-600 K. At 298 K, the ...
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Journal articleApplied Physics Letters · December 1, 1993
Differential capacitance-voltage (C-V) measurements were performed on Al and Pt rectifying contacts fabricated on natural (type IIb) diamonds. The C-V data showed frequency dependence, which decreased significantly after reducing the back contact impedance ...
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Journal articleApplied Physics Letters · December 1, 1993
Schottky diodes formed of Al, Au, and Hg on diamond have been characterized as a function of plasma treatment and thermal annealing. Plasmas formed from N2O, H2, or O2 result in high surface leakage, while plasmas formed fr ...
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Journal articleDiamond and Related Materials · April 13, 1993
CVD diamond thin-film thermistors have been fabricated in various geometries and at different doping levels in an effort to achieve practical resistance-vs.-temperature characteristics. Typical activation energy values reported for polycrystalline films we ...
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Journal articleDiamond and Related Materials · April 13, 1993
The transport properties of type IIb (naturally B-doped), single-crystal diamond were investigated by differential capacitance-voltage (C-V) measurements, Hall effect measurements and resistivity measurements. The results for the Hall effect and resistivit ...
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Journal articleDiamond and Related Materials · April 1, 1993
CVD diamond thin-film thermistors have been fabricated in various geometries and at different doping levels in an effort to achieve practical resistance-vs.-temperature characteristics. Typical activation energy values reported for polycrystalline films we ...
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Journal articleJournal of Electronic Materials · April 1, 1993
Naturally occurring semiconducting single crystal (type IIb) diamonds and boron doped polycrystalline thin films were characterized by differential capacitance-voltage and Hall effect measurements, as well as secondary ion mass spectroscopy (SIMS). Results ...
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Journal articleDiamond and Related Materials · April 1, 1993
The transport properties of type IIb (naturally B-doped), single-crystal diamond were investigated by differential capacitance-voltage (C-V) measurements, Hall effect measurements and resistivity measurements. The results for the Hall effect and resistivit ...
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Journal articleDiamond and Related Materials · March 31, 1993
A computer-controlled oxy-acetylene torch was used to nucleate and grow polycrystalline diamond films. The computer interface was designed to monitor and/or modify continuously oxygen and acetylene flow rates, while a PID temperature controller was used to ...
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Journal articleJournal of Crystal Growth · March 2, 1993
This paper reports the successful growth of optically transparent, individual diamond crystals up to millimeter diameters on silicon substrates by oxygen-acetylene combustion flames at atmospheric pressure. The growth process consisted of three steps: (i) ...
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Journal articleDiamond and Related Materials · March 1, 1993
A computer-controlled oxy-acetylene torch was used to nucleate and grow polycrystalline diamond films. The computer interface was designed to monitor and or modify continuously oxygen and acetylene flow rates, while a PID temperature controller was used to ...
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Journal articleIEEE Transactions on Electron Devices · 1993
Current-voltage characteristics of P-doped polycrystalline Si, Au, and Pt contacts on naturally occurring semiconducting (100) diamond crystals have been investigated. Logarithmic plots of the forward characteristics of these rectifying contacts indicate a ...
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Journal articleJournal of Materials Research · January 1, 1992
The role of Si02in nucleation of diamond has been investigated in an oxy-acetylene flame. It was found that growth methods that minimize Si02formation enhance diamond nucleation. A short pretreatment of a scratched Si surface in a low ...
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Journal articleJournal of Physics and Chemistry of Solids · January 1, 1992
The carrier transport properties of CdTe electrodeposited from tri-n-butylphosphine telluride have been studied by resistivity and Hall effect measurements as a function of temperature. Argon annealed electrodeposited CdTe was found to be consistently p-ty ...
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Journal articleJournal of the Electrochemical Society · January 1, 1991
The preparation of electrodeposited semiconductors for Hall effect measurements is complicated by the fact that these materials are, by necessity, attached to highly conducting substrates. As a result, methods were developed to reproducibly remove large ar ...
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Journal articleJournal of the Electrochemical Society · January 1, 1991
Two methods have been investigated for incorporating excess cadmium into CdTe electrodeposited from tri-n-butyl-phosphine telluride. These were: (I) variation of the Cd(II):Te concentration ratio in situ from 0.009 to 0.30, and (ii) the diffusion of metall ...
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Journal articleJournal of Applied Physics · December 1, 1990
Thin-film polycrystalline CdTe was electrodeposited as described previously onto indium-tin-oxide coated glass under argon and then stored either under argon or air before and after the annealing step. Dopants were incorporated into films by several method ...
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Journal articleJournal of Physics D Applied Physics · May 14, 1990
Thin film p-cadmium telluride that has been electrodeposited from non-aqueous propylene carbonate has been doped with copper using two electrochemical methods. The first involved electrochemical codeposition (in situ doping) of copper and cadmium telluride ...
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Journal articleJournal of the Electrochemical Society · January 1, 1987
Thin film cadmium telluride has been deposited cathodically on titanium in a photoelectrochemical cell (PEC) using a propylene carbonate solution of Cd(II) and tri-n-butylphosphine telluride (BPT) at 100°C. Illumination of the cathode enhances the cathodic ...
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