Scholars@Duke
Hisham Z. Massoud

Hisham Z. Massoud

Professor Emeritus of Electrical and Computer Engineering
Pierre R. Lamond Department of Electrical and Computer Engineering
massoud@ee.duke.edu
Box 90291, Dept of Elec and Comp Eng, Durham, NC 27708-0291
CIEMAS Building, Room 3521, Dept of Elec and Comp Eng, Durham, NC 27708-0291

Scholarly Works - Journal articles

Integrated sensing and information processing theme-based redesign of the undergraduate electrical and computer engineering curriculum at Duke University

Journal article Advances in Engineering Education · 2010 The field of electrical and computer engineering has evolved significantly in the past two decades. This evolution has broadened the field of ECE, and subfields have seen deep penetration into very specialized areas. Remarkable devices and systems arising ... Cite

Dual-threshold pass-transistor logic design

Journal article Proceedings of the ACM Great Lakes Symposium on VLSI Glsvlsi · November 6, 2009 This paper introduces pass-transistor logic design with dualthreshold voltages. A set of single-rail, fully restored, passtransistor gates are presented. Logic transistors are implemented with low threshold voltages and signal restoration transistors with ... Full text Cite

Design of a flexible RF data link and associated laboratory curriculum in a first analog electronics and devices course

Journal article ASEE Annual Conference and Exposition, Conference Proceedings · September 1, 2009 A flexible low cost digital RF/IR communication link is described with an accompanying curriculum. The construction of the data link is intended to provide a jumping off point for students to explore electronics in a design-oriented, project-based first el ... Cite

3-D self-consistent Schrödinger-Poisson solver: The spectral element method

Journal article Journal of Computational Electronics · February 15, 2008 In this paper, we developed an efficient three-dimensional (3-D) nanoelectronic device simulator based on a self-consistent Schrödinger-Poisson solver to simulate quantum transport. An efficient and fast algorithm, the spectral element method (SEM), is dev ... Full text Cite

3-D Quantum Transport Solver Based on the Perfectly Matched Layer and Spectral Element Methods for the Simulation of Semiconductor Nanodevices.

Journal article Journal of computational physics · November 2007 A 3-D quantum transport solver based on the spectral element method (SEM) and perfectly matched layer (PML) is introduced to solve the 3-D Schrödinger equation with a tensor effective mass. In this solver, the influence of the environment is replaced with ... Full text Cite

Solution of the 3-D schrödinger equation with tensor effective mass based on perfectly matched layer and spectral element methods

Journal article Proceedings of SPIE the International Society for Optical Engineering · May 23, 2007 A simple and systematic algorithm based on the perfectly matched layer (PML) method and spectral element method (SEM) is introduced to solve the 3-D Schrödinger equation with tensor effective mass. This algorithm extends the lead regions of a device into a ... Full text Cite

On the effects of carrier tunneling on the capacitance-voltage characteristics of ultrathin-oxide MOSFETs

Journal article Ecs Transactions · January 1, 2006 The combination of carrier tunneling and channel resistance in ultrathin-oxide metal-oxide-semiconductor field-effect transistors (MOSFETs) and the two-dimensional interaction of the source-channel and drain-channel transitions along the MOSFET channel res ... Cite

ECS Transactions: Preface

Journal article Ecs Transactions · January 1, 2006 Cite

Growth kinetics and electrical properties of ultrathin silicon-dioxide layers

Journal article Ecs Transactions · January 1, 2006 In this paper, the growth kinetics and electrical properties of ultrathiii silicon-dioxide layers are reviewed. Topics discussed here include the onset of oxide growth, the effects of temperature, substrate orientation, dopant type and concentration, and s ... Full text Cite

An evaluation of the impact of gate oxide tunneling on dual-V t-based leakage reduction techniques

Journal article Proceedings of the ACM Great Lakes Symposium on VLSI Glsvlsi · January 1, 2006 We evaluate the effectiveness of dual-Vt design in the presence of both subthreshold leakage and leakage due to gate oxide tunneling. At the device level, we use detailed HSPICE simulation to investigate the total leakage impact of three methods ... Full text Cite

Spectral element method for the schrödinger-poisson system

Journal article 2004 10th International Workshop on Computational Electronics IEEE Iwce 10 2004 Abstracts · December 1, 2004 The development of a fast spectral element method (SEM) with exponential accuracy for the self-consistent solution of the Schrödinger-Poisson system for the simulation of semiconductor nanodevices was presented. Gauss-Lobatto-Legendre polynomials were used ... Cite

Spectral element method for the Schrödinger-Poisson system

Journal article Journal of Computational Electronics · October 1, 2004 A novel fast Spectral Element Method (SEM) with spectral accuracy for the self-consistent solution of the Schrödinger-Poisson system has been developed for the simulation of semiconductor nanodevices. The field variables in Schrödinger and Poisson equation ... Full text Cite

The spectral grid method: A novel fast Schrödinger-equation solver for semiconductor nanodevice simulation

Journal article IEEE Transactions on Computer Aided Design of Integrated Circuits and Systems · August 1, 2004 A spectral-domain method is described for solving Schrödinger's equation based on the multidomain pseudospectral method and boundary patching. The computational domain is first divided into nonoverlapping subdomains. Using the Chebyshev polynomials to repr ... Full text Cite

Distribution of the contact-potential difference local values over the gate area of MOS structures

Journal article Microelectronic Engineering · April 1, 2004 The lateral distribution of the effective contact potential difference (ECPD or φMS) was determined experimentally for the first time over the gate area of metal-oxide-semiconductor (MOS) structures. The photoelectric method for measuring φ ... Full text Cite

The lateral distribution of the effective contact potential difference over the gate area of MOS structures

Journal article Electron Technology · January 5, 2004 The lateral distribution of the effective contact potential difference (ECPD), often referred to as the work-function difference ΦMS, was determined experimentally for the first time over the gate area of a metal-oxide-semiconductor (MOS) struct ... Cite

Effects of stress annealing in nitrogen on the effective contact-potential difference, charges, and traps at the Si/SiO 2 interface of metal-oxide-semiconductor devices

Journal article Journal of Applied Physics · August 15, 2002 In this article, we report the results of a study of the effects of high-temperature stress annealing in nitrogen on the electrical properties of metal/oxide/semiconductor devices. In this study, we have experimentally characterized the dependence of the r ... Full text Cite

Effects of stress annealing in nitrogen on the index of refraction of silicon dioxide layers in metal-oxide-semiconductor devices

Journal article Journal of Applied Physics · August 15, 2002 In this article, we report the results of a study of the effects of high-temperature stress annealing in nitrogen on the index of refraction of SiO 2 layers in metal/oxide/semiconductor (MOS) devices. In this study, we have experimentally charac ... Full text Cite

Extraction of the gate oxide thickness of N- and P-channel MOSFETs below 20 angstrom from the substrate current resulting from valence-band electron tunneling

Journal article Technical Digest International Electron Devices Meeting · December 1, 1999 This paper introduces a method for the determination of the gate oxide thickness, Xox, of N- and P-Channel MOSFETs with ultrathin oxides based on the characterization and modeling of the substrate current resulting from valence-band electron tun ... Cite

Thermal model for the initiation of programming in metal-to-metal amorphous-silicon antifuses

Journal article Journal of the Electrochemical Society · April 1, 1999 A thermal model for the initiation of programming in metal-to-metal amorphous-silicon antifuses is described. The current and field crowding at the edges of the via cause the temperature at the via corners to increase due to Joule heating. Programming is i ... Full text Cite

Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and SiO2/Ta2O5 dielectrics with oxide scaling

Journal article Microelectronic Engineering · January 1, 1999 Gate oxide scaling in NMOSFETs causes electrons to tunnel from the conduction and valence bands of the silicon substrate in the direct-tunneling regime. In NMOSFETs, the tunneling of electrons from the substrate's valence band is a source of the substrate ... Full text Cite

Simulation of the drain-current characteristics of MOSFETs with ultrathin oxides in the presence of direct tunneling

Journal article Microelectronic Engineering · January 1, 1999 Carrier tunneling in the gate dielectric, especially in the direct-tunneling regime where large current densities flow through the gate oxide, are known to result in substantial changes in the drain-current characteristics of MOSFETs. In this paper, we pre ... Full text Cite

Effects of Ge content in poly-Si1-xGex gate material on the tunneling barrier in PMOS devices

Journal article Microelectronic Engineering · January 1, 1999 The use of SiGe gates in MOSFET technology has promise as a single-gate material for both n- and p-channel MOSFETs. The Ge content in the gate, however, affects the gate energy band diagram. While Ge in the SiGe gate does not affect the conduction-band ene ... Full text Cite

Comparison of valence-band tunneling in pure sio2, composite sio2/ta2o5, and pure ta2o5, in mosfets with 1.0 nm-thick sio2-equivalent gate dielectrics

Journal article Materials Research Society Symposium - Proceedings · 1999 The gate tunneling current in ultrathin gate dielectric NMOSFETs with positive gate bias is due to the tunneling of electrons from the conduction and valence bands of the substrate. Valence-band electrons tunnel from the substrate of NMOS devices when the ... Cite

Modeling the dependence of the gate current on Ge content in ultrathin gate dielectric PMOS devices with POLY-Si1Gex gate material

Journal article Materials Research Society Symposium Proceedings · January 1, 1999 The performance of CMOS devices improves due to the addition of Ge in their poly-Si gate material. The presence of Ge in the gate increases the current drive due to the reduction of the flatband voltage. The change in the flatband voltage is due to a shift ... Full text Cite

Self-consistent mosfet tunneling simulations-trends in the gate and substrate currents and the drain-current turnaround effect with oxide scaling

Journal article Materials Research Society Symposium Proceedings · January 1, 1999 This paper discusses the simulation needs of deep-submicron MOSFETs beyond the 100 nm technology generation where the tunneling of carriers through the gate dielectric will become a vital issue in device design, optimization, and characterization. We prese ... Full text Cite

ON-state reliability of amorphous-silicon antifuses

Journal article Journal of Applied Physics · December 1, 1998 The ON state of metal-to-metal amorphous-silicon antifuses suffers from two reliability concerns: switch-off and de-stress failure. The switch-off current and de-stress lifetime are strongly dependent on the temperature of the conducting filament and hence ... Full text Cite

Energy considerations during the growth of a molten filament in metal-to-metal amorphous-silicon antifuses

Journal article Journal of Applied Physics · November 1, 1998 A model for the growth of a conducting filament in metal-to-metal amorphous-silicon antifuses is presented. The transition from a high-resistance state to a low-resistance one is initiated by the formation of a localized hot spot. The growth of the filamen ... Full text Cite

Heterointerface dipoles: Applications to (a) Si-SiO2, (b) nitrided Si-N-SiO2, and (c) SiC-SiO2 interfaces

Journal article Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures · July 1, 1998 This article identifies procedures to calculate charge-transfer dipoles at semiconductor-dielectric interfaces, focusing primarily on the Si-SiO2 system. Since SiO2 is more polar than Si, there is a transfer of electrons from Si to Si ... Cite

Heterointerface dipoles: Applications to (a) Si-SiO2, (b) nitrided Si-N-SiO2, and (c) SiC-SiO2 interfaces

Journal article Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures · 1998 This article identifies procedures to calculate charge-transfer dipoles at semiconductor-dielectric interfaces, focusing primarily on the Si-SiO2 system. Since SiO2 is more polar than Si, there is a transfer of electrons from Si to SiO2 to balance the diff ... Cite

Improvement of gate dielectric reliability for p+ poly MOS devices using remote PECVD top nitride deposition on thin gate oxides

Journal article Annual Proceedings Reliability Physics Symposium · January 1, 1998 Dual layer dielectrics have been formed by remote PECVD deposition of ultra-thin (0.4 to approximately 1.2 nm) nitrides onto thin thermal oxides grown on n-type Si(100) substrates. Activation of boron-implanted p+ polycrystalline silicon gate electrodes wa ... Cite

Submicrometre elevated source and drain MOSFET technology using E-beam evaporated silicon

Journal article Electronics Letters · June 19, 1997 A self-aligned MOSFET structure with elevated source and drain was fabricated using electron beam evaporation of silicon. This technology allows the realisation of defect-free junctions as shallow as 200Å without preamorphisation, source/drain and gate reg ... Full text Cite

Thermal oxidation of silicon in the ultrathin regime

Journal article Solid State Electronics · January 1, 1997 This article reviews our present understanding of silicon oxidation kinetics in the ultrathin-film regime. Experimental results obtained at the onset of oxidation at room temperature, low temperatures and high temperatures are divided into two phases. In t ... Full text Cite

Device physics and simulation of metal/ferroelectric-film/p-type silicon capacitors

Journal article Microelectronic Engineering · January 1, 1997 This paper introduces an electrostatic model for Metal/Ferroelectric/Silicon (MFS) capacitors. These structures consist of a metal gate, a dielectric stack which includes a ferroelectric film, and a p-type silicon substrate. The dielectric stack consists o ... Full text Cite

The role of substrate carrier generation in determining the electric field in the oxide of MOS capacitors biased in the Fowler-Norheim tunneling regime

Journal article Microelectronic Engineering · January 1, 1997 This paper investigates the role of substrate carrier generation in determining the field, potential, and carrier distributions in MOS capacitors biased in the Fowler-Nordheim tunneling regime. We focus especially on the oxide electric field obtained under ... Full text Cite

Design and construction of a rapid thermal processing system for in situ optical measurements

Journal article Review of Scientific Instruments · January 1, 1996 A rapid thermal processing system is described incorporating features that enable in situ optical measurements. In particular, a system incorporating an in situ spectroscopic ellipsometer is described highlighting some of the unusual features necessary for ... Full text Cite

The onset of the thermal oxidation of silicon from room temperature to 1000°C

Journal article Microelectronic Engineering · January 1, 1995 This paper presents experimental results of the onset of SiO2 growth at high temperatures ranging from 800 to 1000°C, and reviews observations made on the intitial stages of silicon oxidation at low temperatures ranging from 300 to 700°C, and na ... Full text Cite

New properties and applications of electron-beam evaporated silicon in submicron elevated source/drain metal-oxide-semiconductor field-effect transistors

Journal article Applied Physics Letters · December 1, 1994 We report the porous nature of electron-beam evaporated silicon on the sidewalls of metal-oxide-semiconductor field-effect transistor (MOSFET) gate spacers. This property was used to develop and fabricate submicron elevated source/drain MOSFETs with 200-50 ... Full text Cite

Wavelength Considerations for Improved Silicon Wafer Temperature Measurement by Ellipsometry

Journal article Journal of the Electrochemical Society · January 1, 1994 The influence of the choice of wavelength on the resolution of silicon wafer temperature measurement by ellipsometry has been investigated. By changing the wavelength from 6328 to 4428 A, a 30% reduction was achieved in the rms difference between the tempe ... Full text Cite

Substrate Doping and Microroughness Effects in RTP Temperature Measurement by in Situ Ellipsometry

Journal article Journal of the Electrochemical Society · January 1, 1994 The use of single-wavelength ellipsometry for the measurement of the temperature of heavily doped and chemically roughened silicon wafers in a rapid-thermal processing (RPT) environment was investigated. At an operating wavelength of 6328 Å, the measuremen ... Full text Cite

Subquarter-mícrometre elevated source-and-drain MOSFET structure using polysilicon spacers

Journal article Electronics Letters · January 1, 1994 A novel subquarter-micrometre MOSFET with a selfaligned source and drain, structure is proposed with elevated sources and drains formed by using polysilicon spacers. The spacers can reduce the effective channel length by 50% compared to the mask length, an ... Full text Cite

Microelectromechanical systems: a new technology for biomedical applications

Journal article Proceedings of the Annual Conference on Engineering in Medicine and Biology · December 1, 1993 Microelectromechanical systems on a scale as small as a few micrometers can be fabricated using photolithographic and anisotropic etching processes on single crystal substrates such as silicon. Processing steps similar to those used to fabricate integrated ... Cite

Ellipsometric monitoring and control of the rapid thermal oxidation of silicon

Journal article Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena · November 1, 1993 Single wavelength ellipsometry is demonstrated for in situ process monitoring and control in a rapid thermal processing system. Simultaneous in situ ellipsometric measurements of the temperature and oxide film thickness allow closed-loop feedback c ... Full text Cite

Resolution of Silicon Wafer Temperature Measurement by in Situ Ellipsometry in a Rapid Thermal Processor

Journal article Journal of the Electrochemical Society · January 1, 1993 The application of ellipsometry as a technique for in situ silicon wafer temperature measurement in a rapid thermal processing environment was investigated. This technique is based on the ellipsometric measurement of the refractive index of silicon, and th ... Full text Cite

Simultaneous Silicon Wafer Temperature and Oxide Film Thickness Measurement in Rapid-Thermal Processing Using Eilipsometry

Journal article Journal of the Electrochemical Society · January 1, 1993 The application of single-wavelength ellipsometry as an in situ technique for the simultaneous measurement of the silicon wafer substrate temperature and the surface oxide film thickness in a rapid-thermal processing system has been investigated. This tech ... Full text Cite

Rigid and flexible thin-film multielectrode arrays for transmural cardiac recording.

Journal article IEEE transactions on bio-medical engineering · March 1992 Thin-film transmural cardiac multielectric arrays were fabricated using integrated-circuit processing techniques. Several substantial improvements were achieved over conventional handmade arrays such as a smaller cross-sectional area, a larger number of re ... Full text Cite

Reconstructed two-dimensional doping profiles from multiple one-dimensional secondary ion mass spectrometry measurements

Journal article Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena · January 1, 1992 Two-dimensional doping profiles can be determined from multiple one-dimensional secondary ion mass spectrometry (SIMS) profiles using computed tomography techniques. The chemical nature of SIMS enables the measurement of both as-implanted and annea ... Full text Cite

Manufacturability of Rapid-Thermal Oxidation of Silicon: Oxide Thickness, Oxide Thickness Variation, and System Dependency

Journal article IEEE Transactions on Semiconductor Manufacturing · January 1, 1992 Using statistical analysis of optimal experimental designs, the dependence of oxide thickness, and oxide thickness variation within a wafer and wafer-to-wafer on process variables was studied in rapid-thermal processing systems that differed in chamber con ... Full text Cite

C-V measurement and simulation of silicon-insulator-silicon (SIS) structures for analyzing charges in buried oxides of bonded SOI materials

Journal article IEICE Trans. Electron. (Japan) · 1992 Charges in buried oxide layers formed by wafer bonding were evaluated by capacitance-voltage (C-V) measurements. In this study, silicon-insulator-silicon (SIS) and metal-oxide-silicon (MOS) capacitors were fabricated on bonded wafers. For analyzing C-V cur ... Cite

Effect of thermally induced stresses on the rapid-thermal oxidation of silicon

Journal article Journal of Applied Physics · December 1, 1991 During rapid-thermal processing (RTP), radiative losses from the edge of silicon wafers which are heated by uniform irradiation create a radial temperature gradient. This temperature gradient induces a stress distribution which is compressive at the center ... Full text Cite

Optimum preparation and storage of Ag/Cl and Pt black microelectrodes for transmural cardiac recording applications

Journal article Proceedings of the Annual Conference on Engineering in Medicine and Biology · December 1, 1991 Microelectrode arrays intended for transmural cardiac recording applications with recording sites of silver chloride and platinum black were prepared using integrated-circuit (IC) techniques. The optimum method of preparing each recording medium is describ ... Cite

Characterization and modeling of the role of silicon self-interstitials (SiI) in stacking-fault growth. II. SiI injection by oxygen precipitation

Journal article Proceedings the Electrochemical Society · January 1, 1991 An oxygen precipitation/surface stacking-fault growth experiment was carried out to study the behavior of silicon self-interstitials injected by the precipitation of interstitial oxygen within the bulk of silicon samples. The sample front surfaces were cap ... Cite

Determination of the Kinetic Coefficients of Silicon Self-Interstitials from Back-Side Oxidation/Front-Surface Stacking-Fault Growth Experiments

Journal article Journal of the Electrochemical Society · January 1, 1991 A series of back-side oxidation/front-side stacking-fault growth experiments have been carried out to determine the kinetic coefficients of self-interstitials in silicon. In these experiments, wet and dry oxidations of the back side of thinned silicon samp ... Full text Cite

Characterization and modeling of the role of silicon self-interstitials (SiI) in stacking-fault growth. I.SiI injection by backside oxidation

Journal article Proceedings the Electrochemical Society · January 1, 1991 Backside oxidation/frontside stacking-fault growth experiments were carried out to study the behavior of silicon self-interstitials injected during wet and dry oxidations of the backside of thinned samples. The concentration of self-interstitials at the ca ... Cite

Determination of the Kinetic Coefficients of Silicon Self-Interstitials from Oxygen Precipitation/Front-Surface Stacking-Fault Growth Experiments

Journal article Journal of the Electrochemical Society · January 1, 1991 An oxygen precipitation/surface stacking-fault growth experiment has been carried out to determine the kinetic coefficients of silicon self-interstitials. In this experiment, silicon self-interstitials were injected by the precipitation of interstitial oxy ... Full text Cite

Causes and prevention of temperature-dependent bubbles in silicon wafer bonding

Journal article Japanese Journal of Applied Physics · January 1, 1991 Unbonded areas or bubbles generated at the interface of bonded silicon wafers in the temperature range of 200-800°C have been investigated. Experiments described in this paper demonstrate that the desorption of hydrocarbon contamina­tion at the silicon waf ... Full text Cite

Modeling the enhanced diffusion of implanted boron in silicon

Journal article Proceedings the Electrochemical Society · January 1, 1991 A simulation model was developed to describe the anomalous transient enhanced diffusion of implanted boron in silicon characterized by profiles in which a secondary peak is formed near the amorphous/crystalline interface. In this model, the diffusion equat ... Cite

Physical modeling of the time constant of transient enhancement in the diffusion of ion-implanted dopants in silicon

Journal article Proceedings the Electrochemical Society · January 1, 1991 The supersaturation of point defects in silicon during the annealing of implantation damage causes a transient enhanced diffusion of dopants. A model describing the time constant for the transient enhanced diffusion of implanted dopants was developed based ... Cite

An investigation of Si-SiO2 interface charges in thermally oxidized (100), (110), (111), and (511) silicon

Journal article Journal of Applied Physics · December 1, 1990 Trends in the electronic properties of the Si-SiO2 interface with various processing have been frequently reported. The present study focuses on silicon substrate orientation dependent trends in fixed oxide charge, Q f, and interface ... Full text Cite

Thermal oxidation of heavily doped silicon in the thin-film regime. Dopant behavior and modeling growth kinetics

Journal article Proceedings the Electrochemical Society · December 1, 1990 A three-stage model is proposed to describe SiO2 growth kinetics and the behavior of high concentrations of phosphorus in silicon during oxidation in dry oxygen in the thin-film regime. In the first stage, the formation of a silicide phase at th ... Cite

Role of end-of-range dislocation loops as a diffusion barrier

Journal article Proceedings the Electrochemical Society · December 1, 1990 The effect of end-of-range (EOR) dislocation loops on phosphorus diffusion was studied in the diffusion of P implanted in single-crystal and preamorphized silicon. After annealing at 850°C for 5 to 60 min in an oxidizating ambient, P profiles obtained by s ... Cite

Electrode fabrication

Journal article Proceedings of the Annual Conference on Engineering in Medicine and Biology · December 1, 1990 The research program Core Unit B.2, Electrode Fabrication, of the National Science Foundation/Engineering Research Center (NSF/ERC) is described. The program focuses on the development and fabrication of plunge, surface, and three-dimensional electrode arr ... Cite

Silicon oxidation kinetics in the thin-film regime

Journal article Conference on Solid State Devices and Materials · December 1, 1990 The present status of silicon oxidation in the thin-film regime is reviewed with emphasis on experimental results and modeling approaches. The effects of temperature, orientation, and dopant concentration in the substrate on the oxidation kinetics are disc ... Cite

Comparison of Measured and Simulated Two-Dimensional Phosphorus Diffusion Profiles in Silicon

Journal article Journal of the Electrochemical Society · January 1, 1990 The two-dimensional diffusion of phosphorus has been studied by comparing profiles measured experimentally after furnace and rapid thermal annealing with simulated profiles obtained with the two-dimensional simulators SUPREM IV and PREDICT 2. It was first ... Full text Cite

The Effect of Annealing Ambient on Dopant Diffusion in Silicon during Low-Temperature Processing

Journal article Journal of the Electrochemical Society · January 1, 1990 Annealing ambient effects on dopant diffusion in silicon were investigated during low-temperature processing. BF2, P, and As were implanted at room temperature in (100) silicon through a 140Å thick layer of SiO2 with the ion beam norm ... Full text Cite

Transfer of patterns from the backside of a silicon wafer coated with Si3N4 to its front surface during wet oxidation

Journal article Applied Physics Letters · December 1, 1989 Patterns on the backside of silicon wafers coated with Si3N 4 films have been observed on their front surfaces after wet oxidation. This pattern transfer phenomenon is the result of a reduction in the oxidation rate of the front-surfa ... Full text Cite

The role of silicon self-interstitial supersaturation in the retardation of oxygen precipitation in Czochralski silicon

Journal article Journal of Applied Physics · December 1, 1989 The retardation phenomenon of oxygen precipitation in Czochralski silicon has been studied simultaneously with the growth of surface stacking faults under a silicon nitride capping layer. The surface faults were intentionally introduced to monitor the bulk ... Full text Cite

Thin-film flexible multielectrode arrays for voltage measurements in the heart

Journal article Annual International Conference of the IEEE Engineering in Medicine and Biology Proceedings · November 1, 1989 Flexible cardiac electrode arrays are constructed utilizing integrated-circuit fabrication techniques. The use of a flexible polyimide substrate, Kapton (DuPont), offers two distinct advantages over conventional depth electrode arrays. Once the flexible ar ... Cite

The effect of ion-implantation damage on dopant diffusion in silicon during shallow-junction formation

Journal article Journal of Electronic Materials · March 1, 1989 Low-thermal-budget annealing of ion-implanted BF 2 +, P, and As in Si was studied for shallow-junction formation. Implant doses were sufficient to amorphize the silicon surface region. Low-temperature furnace annealing and rapid-therm ... Full text Cite

Two-Dimensional Impurity Profiling with Emission Computed Tomography Techniques

Journal article IEEE Transactions on Computer Aided Design of Integrated Circuits and Systems · January 1, 1989 A new technique for the determination of twodimensional impurity profiles using methods developed for emission computed tomography is presented. Several one-dimensional impurity profiles obtained at different directions through the sample are used to recon ... Full text Cite

Accurate junction-depth measurements using chemical staining

Journal article ASTM Special Technical Publication · 1989 Cite

Charge-transfer dipole moments at the Si-SiO2 interface

Journal article Journal of Applied Physics · December 1, 1988 A first-order model has been developed to calculate the magnitude of the dipole moment at the Si-SiO2 interface resulting from partial charge transfer that takes place upon the formation of interface bonds. The charge transfer occurs because of ... Full text Cite

Reverse dopant redistribution during the initial stages of the oxidation of heavily doped silicon in dry oxygen

Journal article Applied Physics Letters · December 1, 1988 The oxidation of heavily phosphorus-doped (100) and (111) silicon in the 800-1000 °C range in dry oxygen was studied in the thin-film regime using in situ ellipsometry. The oxide growth kinetics indicate that, in the initial stages of oxidation, phosphorus ... Full text Cite

Thin-film multielectrode arrays for potential gradient measurements in the heart

Journal article IEEE Engineering in Medicine and Biology Society Annual Conference · November 1, 1988 Cardiac needle (plunge) electrode arrays are constructed utilizing integrated-circuit fabrication techniques. These plunge electrodes can be made up to two orders of magnitude smaller in cross-sectional area compared to conventional handmade electrodes. A ... Cite

Influence of rapid thermal annealing temperature on the electrical properties of Be-implanted GaAs p-n junctions

Journal article Applied Physics Letters · January 1, 1988 Planar, Be-implanted p-n junctions were fabricated in GaAs with rapid thermal annealing (RTA). Five second isochronal anneals over a temperature range of 600-1000°C were studied with secondary ion mass spectrometry (SIMS), sheet resistance measurements, an ... Full text Cite

Experimental characterization of two-dimensional dopant profiles in silicon using chemical staining

Journal article Applied Physics Letters · January 1, 1988 An experimental technique for the measurement of two-dimensional impurity diffusion profiles in silicon has been developed. Both the lateral and in-depth extent of dopant diffusion under a mask edge are magnified mechanically by sawing and angle lapping, a ... Full text Cite

Boron profile changes during low-temperature annealing of BF +2-implanted silicon

Journal article Applied Physics Letters · January 1, 1988 BF+2 ions were implanted in (100) silicon at room temperature with an energy of 40 keV through a 140-Å-thick SiO2 layer. Boron profiling by secondary-ion mass spectrometry indicates that subsequent annealing in a convention ... Full text Cite

Analytical relationship for the oxidation of silicon in dry oxygen in the thin-film regime

Journal article Journal of Applied Physics · December 1, 1987 The oxidation of silicon in dry oxgen is characterized by an initial stage where the growth rate is larger than predicted by the Deal-Grove linear-parabolic general oxidation relationship. This growth-rate enhancement has been studied in the 800-1000 °C ra ... Full text Cite

The influence of HCl on the oxidation-enhanced diffusion of boron and arsenic in silicon

Journal article Journal of Applied Physics · December 1, 1987 The influence of HCl on the oxidation-enhanced diffusion of boron and arsenic in silicon has been studied. Experimental data at 1000, 1100, and 1150 °C were obtained using secondary ion mass spectrometry (SIMS). A previously proposed empirical model was us ... Full text Cite

MEASUREMENT OF TWO-DIMENSIONAL DIFFUSION PROFILES

Journal article JOURNAL OF THE ELECTROCHEMICAL SOCIETY · August 1, 1987 Link to item Cite

POINT-DEFECT KINETICS DURING BACK SIDE OXIDATION MEASURED BY FRONT SIDE STACKING-FAULT GROWTH

Journal article JOURNAL OF THE ELECTROCHEMICAL SOCIETY · March 1, 1987 Link to item Cite

VLSI APPROACH FOR CARDIAC MULTIELECTRODE PROBE FABRICATION.

Journal article IEEE Engineering in Medicine and Biology Society Annual Conference · December 1, 1986 Cardiac needle (plunge) electrode arrays are constructed utilizing integrated-circuit fabrication techniques. These new plunge electrodes can be built cheaply, precisely, and in large quantity. More importantly, the needle can be made up to two orders of m ... Cite

SILICON OXIDATION STUDIES: SILICON ORIENTATION EFFECTS ON THERMAL OXIDATION.

Journal article Journal of the Electrochemical Society · 1986 The initial stage of the thermal oxidation of various crystallographic orientations of silicon (100), (110), and (111) reveals a complex rate behavior. This behavior is not understood within the conventional linear-parabolic model. A recently revised model ... Cite

STRESS-ASSISTED DIFFUSION OF BORON AND ARSENIC IN SILICON.

Journal article Materials Research Society Symposia Proceedings · December 1, 1985 The diffusion of B and As in mechanically stressed silicon has been investigated for initial implant doses of 10**1**3, 10**1**4, and 10**1**5 cm** minus **2, over a range of annealing temperatures. At stresses near the silicon yield point, no significant ... Cite

Thermal Oxidation of Silicon in Dry Oxygen: Growth-Rate Enhancement in the Thin Regime II. Physical Mechanisms

Journal article Journal of the Electrochemical Society · January 1, 1985 many studies of oxidation kinetics, it has been observed that silicon-dioxide growth in dry oxygen in the thin film regime (<500Å) is faster than predicted by the linear-parabolic description of the growth of thicker layers. Oxidation-rate enhancement in t ... Full text Cite

Thermal Oxidation of Silicon in Dry Oxygen Growth-Rate Enhancement in the Thin Regime I. Experimental Results

Journal article Journal of the Electrochemical Society · January 1, 1985 many studies of oxidation kinetics, it has been observed that SiO2 growth in dry oxygen in the thin regime (<500Å) is faster than the classic description of growth in thicker layers by a linear-parabolic relationship. Growth-rate enhancement in ... Full text Cite

Thermal Oxidation of Silicon in Dry Oxygen Accurate Determination of the Kinetic Rate Constants

Journal article Journal of the Electrochemical Society · January 1, 1985 Based upon the linear-parabolic growth model of silicon oxidation, accurate kinetic rate constants are determined for (100), (111), and (110) silicon oxidized in dry oxygen in the 800°-1000°C range. The oxide growth was monitored by high temperature automa ... Full text Cite

MEASUREMENT AND MODELING OF CHARGE FEEDTHROUGH IN N-CHANNEL MOS ANALOG SWITCHES.

Journal article IEEE Journal of Solid-State Circuits · 1985 Charge feedthrough in analog MOS switches has been measured. The dependence of the feedthrough voltage on the input and tub voltages, device dimensions, and load capacitances was characterized. Most importantly, it was observed that the feedthrough voltage ... Cite

Measurement and Modeling of Charge Feedthrough in n-Channel MOS Analog Switches

Journal article IEEE Journal of Solid State Circuits · January 1, 1985 Charge feedthrough in analog MOS switches has been measured. The dependence of the feedthrough voltage on the input and tub voltages, device dimensions, and load capacitances was characterized. Most importantly, it was observed that the feedthrough voltage ... Full text Cite

Electron trapping in SiO2 at 295 and 77 °K

Journal article Journal of Applied Physics · December 1, 1979 The electron trapping behavior of SiO2 has been measured as a function of thickness at 295 and 77 °K. The devices used were metal-oxide-semiconductor devices with the SiO2 grown thermally. The results indicate bulk traps are dominant ... Full text Cite