Journal articleACM Transactions on Design Automation of Electronic Systems · January 15, 2024
We describe an exciting new application domain for deep reinforcement learning (RL): droplet routing on digital microfluidic biochips (DMFBs). A DMFB consists of a two-dimensional electrode array, and it manipulates droplets of liquid to automatically exec ...
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Journal articleSensors (Basel, Switzerland) · February 2020
A prototype aerosol detection system is presented that is designed to accurately and quickly measure the concentration of selected inorganic ions in the atmosphere. The aerosol detection system combines digital microfluidics technology, aerosol impaction a ...
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Journal articleSN Applied Sciences · December 1, 2019
Two methods were studied for selectively measuring the on-chip absorbance of trace sulfate analytes in droplets on a digital microfluidics (DMF) platform. In one method, the direction of measurement was perpendicular to the flat upper and lower surfaces of ...
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Journal articleMicrofluidics and Nanofluidics · December 1, 2017
We report the integration of a lead zirconate titanate, Pb[Zr xTi 1-xO 3] (PZT), piezoelectric transducer disk into the top plate of an otherwise conventional electrowetting-on-dielectric (EWD) digit ...
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Journal articleACS synthetic biology · September 2017
Electrowetting-on-dielectric (EWD) digital microfluidic laboratory-on-a-chip platforms demonstrate excellent performance in automating labor-intensive protocols. When coupled with an on-chip electroporation capability, these systems hold promise for stream ...
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Journal articleBiomicrofluidics · January 2017
This paper reports on the use of a digital microfluidic platform to perform multiplex automated genetic engineering (MAGE) cycles on droplets containing Escherichia coli cells. Bioactivated magnetic beads were employed for cell binding, washing, and ...
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Journal articleJournal of Microelectromechanical Systems · August 1, 2016
Theoretical and experimental approaches verifying the fluidic operation of a partially shielded digital microfluidics device are presented in this paper. This paper is motivated by recent demand from the synthetic biology community for electrowetting on di ...
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Journal articleMicrofluidics and Nanofluidics · December 1, 2015
This paper demonstrates an integrated device combining both EWD droplet actuation and intra-droplet magnetic bead manipulation. Magnetic bead manipulation is achieved by using current-carrying wires acting as microelectromagnets. The current wire structure ...
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Journal articleIEEE Sensors Journal · October 21, 2013
Electrowetting-on-dielectric (EWD) microfluidics is an emerging platform for practical applications such as water quality testing and medical diagnostics. Low power consumption, low sample and reagent volumes, small size, and rapid fluid transport are feat ...
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Journal articleProceedings Design Automation and Test in Europe Date · January 1, 2013
Advances in digital microfluidics and integrated sensing hold promise for a new generation of droplet-based biochips that can perform multiplexed assays to determine the identity of target molecules. Despite these benefits, defects and erroneous fluidic op ...
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Journal article17th International Conference on Miniaturized Systems for Chemistry and Life Sciences Microtas 2013 · January 1, 2013
Software automated genomic engineering (SAGE) enables arbitrary genetic modification of bacteria on a fluidic platform that implements the multiplex automated genomic engineering (MAGE) process [1]. Electrowetting-ondielectric (EWD) digital microfluidics i ...
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Journal articleIEEE Photonics Journal · December 10, 2012
Portable point-of-care (POC) medical diagnostic devices demand low power consumption, efficient use of low sample and reagent volumes, and small size. A Bdigital[ electrowetting-on-dielectric (EWD) microfluidics system with integrated optical sensors is a ...
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Journal articleSensors and actuators. B, Chemical · October 2012
Picoliter droplets actuated on an electrowetting-on-dielectric (EWD) actuator are demonstrated. In this study, the physical scaling of electrodes for 33 μm and 21 μm EWD devices resulted in droplets of 12 pl and 5 pl being dispensed respectively in conjunc ...
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Journal articleIEEE Sensors Journal · May 8, 2012
Miniaturized, portable, sensitive, and low cost sensing systems are important for medical and environmental diagnostic and monitoring applications. Chip scale integrated photonic sensing systems that combine optical, electrical, and fluidic functions are e ...
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Journal articleProceedings of the 16th International Conference on Miniaturized Systems for Chemistry and Life Sciences Microtas 2012 · January 1, 2012
The high mortality rate of sepsis has been attributed to delayed pathogen identification. Hence, a fluidic device is being developed to accelerate the procedures from DNA purification to qPCR sequence detection. Demonstrated herein is the key feature the d ...
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Journal articleProceedings of IEEE Sensors · December 1, 2011
The intimate integration of digital electrowetting microfluidics and optical microcavity sensors results in an excellent platform for low power consumption, high sensitivity integrated sample preparation and testing, which is particularly useful for medica ...
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Journal articleAnalytical chemistry · November 2011
The feasibility of implementing pyrosequencing chemistry within droplets using electrowetting-based digital microfluidics is reported. An array of electrodes patterned on a printed-circuit board was used to control the formation, transportation, merging, m ...
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Journal articleBiotechnology journal · February 2011
The results of investigations into performing DNA sequencing chemistry on a picoliter-scale electrowetting digital microfluidic platform are reported. Pyrosequencing utilizes pyrophosphate produced during nucleotide base addition to initiate a process endi ...
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Journal article14th International Conference on Miniaturized Systems for Chemistry and Life Sciences 2010 Microtas 2010 · December 1, 2010
We report on performing parallel processing on electrowetting-based digital microfluidic chips by taking advantage of reconfigurable architecture combined with programmable control, scalability, and contamination-free liquid handling. The opportunity is to ...
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Journal articleSensors and actuators. B, Chemical · September 2010
A low voltage, two-level-metal, and multi-layer insulator electrowetting-on-dielectric (EWD) platform is presented. Dispensing 300pl droplets from 140nl closed on-chip reservoirs was accomplished with as little as 11.4V solely through EWD forces, and the a ...
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Journal articleIEEE Transactions on Computer Aided Design of Integrated Circuits and Systems · July 1, 2010
Microfluidics-based biochips enable the precise control of nanoliter volumes of biochemical samples and reagents. They combine electronics with biology, and they integrate various bioassay operations, such as sample preparation, analysis, separation, and d ...
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Journal articleNATO Science for Peace and Security Series A Chemistry and Biology · January 1, 2010
With the first experimental demonstration of droplet flow on an electrowetting-on-dielectric (EWD) array platform in 2000, there has been significant interest in droplet actuation for lab-on-a-chip applications. A hydrodynamic scaling model of droplet actu ...
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Journal articleConference proceedings : ... Annual International Conference of the IEEE Engineering in Medicine and Biology Society. IEEE Engineering in Medicine and Biology Society. Conference · December 1, 2009
The advent of digital microfluidic lab-on-a-chip (LoC) technology offers an excellent platform for developing diagnostic applications. In diagnostics raw physiological samples must be introduced onto the chip and then further processed by lysing blood cell ...
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Journal articleAnnual International Conference of the IEEE Engineering in Medicine and Biology Society. IEEE Engineering in Medicine and Biology Society. Annual International Conference · January 2009
The advent of digital microfluidic lab-on-a-chip (LoC) technology offers an excellent platform for developing diagnostic applications. In diagnostics raw physiological samples must be introduced onto the chip and then further processed by lysing blood cell ...
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Journal articleMicrofluidics and Nanofluidics · January 1, 2009
A hydrodynamic scaling model of droplet actuation in an electrowetting-on-dielectric (EWD) actuator is presented that takes into account the effects of contact angle hysteresis, drag from the filler fluid, drag from the solid walls, and change in the actua ...
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Journal articleIEEE Sensors Journal · May 1, 2008
The advent of digital microfluidic lab-on-a-chip (LoC) technology offers a platform for developing diagnostic applications with the advantages of portability, increased automation, low-power consumption, compatibility with mass manufacturing, and high thro ...
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Journal articleVirtual and Physical Prototyping · December 1, 2007
To overcome limitations of current tissue fabrication methods, explore new biocompatible materials, and develop new biomimetic manufacturing process for soft tissue, we are developing a new technology, electrowetting-based microfluidics array printing, whi ...
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Journal articleProceedings of the 3rd International Conference on Advanced Research in Virtual and Rapid Prototyping Virtual and Rapid Manufacturing Advanced Research Virtual and Rapid Prototyping · December 1, 2007
To overcome limitations of current tissue fabrication methods, explore new biocompatible materials, and develop new biomimetic manufacturing process for soft tissue, we are conducting a new technology, electrowetting based microfluidics array printing, whi ...
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Journal articleProceedings of IEEE Sensors · December 1, 2007
The intimate integration of optical components with microfluidics technology will enable next generation portable LoC systems that may completely contain optical generation, processing, and detection. Toward the chip scale integration of digital microfluid ...
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Journal articleMicrofluidics and Nanofluidics · June 1, 2007
The suitability of electrowetting-on-dielectric (EWD) microfluidics for true lab-on-a-chip applications is discussed. The wide diversity in biomedical applications can be parsed into manageable components and assembled into architecture that requires the a ...
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Journal articleIEEE Design and Test of Computers · January 1, 2007
The advent of digital microfluidic lab-on-a-chip (LoC) technology offers a platform for developing diagnostic applications with the advantages of portability, reduction of the volumes of the sample and reagents, faster analysis times, increased automation, ...
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Journal article · December 1, 2006
Microfluidics-based biochips are soon expected to revolutionize clinical diagnosis, DNA sequencing, and other laboratory procedures involving molecular biology. In contrast to continuous-flow systems that rely on permanently-etched microchannels, micropump ...
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Journal articleIEEE Transactions on Computer Aided Design of Integrated Circuits and Systems · February 1, 2006
Microfluidics-based biochips are soon expected to revolutionize clinical diagnosis, deoxyribonucleic acid (DNA) sequencing, and other laboratory procedures involving molecular biology. In contrast to continuous-flow systems that rely on permanently etched ...
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Journal articleProceedings of the IEEE International Conference on Micro Electro Mechanical Systems MEMS · October 25, 2005
Portable and automated field screening equipment would be very effective in detecting and quantifying explosives at various sites. A droplet-based microfluidic lab-on-a-chip utilizing electrowetting is presented for the colorimetric detection of TNT (trini ...
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Journal articleProceedings of SPIE the International Society for Optical Engineering · December 1, 2004
MALDI-MS (matrix-assisted laser desorption/ionization mass spectrometry) is one of the most commonly used techniques for protein analysis. In conventional systems sample preparation is typically done in well-plates and transferred onto a MALDI target by ro ...
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Journal articleProceedings of SPIE the International Society for Optical Engineering · December 1, 2004
An ideal on-site chemical/biochemical analysis system must be inexpensive, sensitive, fully automated and integrated, reliable, and compatible with a broad range of samples. The advent of digital microfluidic lab-on-a-chip (LoC) technology offers such a de ...
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Journal articleLab on a chip · August 2004
Clinical diagnostics is one of the most promising applications for microfluidic lab-on-a-chip systems, especially in a point-of-care setting. Conventional microfluidic devices are usually based on continuous-flow in microchannels, and offer little flexibil ...
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Journal articleAnalytica Chimica Acta · April 1, 2004
A microfluidic lab-on-a-chip (LoC) platform for in vitro measurement of glucose for clinical diagnostic applications is presented in this paper. The LoC uses a discrete droplet format in contrast to conventional continuous flow microfluidic systems. The dr ...
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Journal articleSensors and Actuators B Chemical · March 15, 2004
In this work, a method is presented for controlling on-chip droplet dispensing by electro-wetting actuation in conjunction with capacitance feedback. The method exploits the built-in capacitance of an electro-wetting device to meter the droplet volume and ...
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Journal articleIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 2004
Composite microsystems that incorporate microelectromechanical and microelectrofluidic devices are emerging as the next generation of system-on-a-chip (SOC). We present a performance comparison between two types of microelectrofluidic systems (MEFS): conti ...
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Journal articleTechnical Digest International Electron Devices Meeting · December 1, 2003
In this work, results and data are reported on key aspects of sample processing protocols performed on-chip in a digital microfluidic lab-on-a-chip. We report the results of experiments on aspects of sample processing, including on-chip preconcentration an ...
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Journal articleLab on a chip · November 2003
The mixing of analytes and reagents for a biological or chemical lab-on-a-chip is an important, yet difficult, microfluidic operation. As volumes approach the sub-nanoliter regime, the mixing of liquids is hindered by laminar flow conditions. An electrowet ...
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Journal articleProceedings of the IEEE Micro Electro Mechanical Systems MEMS · July 23, 2003
A microfluidic lab-on-chip (LoC) for measuring the concentration of human body metabolites, using submicroliter droplets as reaction chambers, is presented in this paper. The device is based on the manipulation of droplets using the principle of electrowet ...
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Journal articleLab on a chip · February 2003
Mixing of analytes and reagents is a critical step in realizing a lab-on-a-chip. However, mixing of liquids is very difficult in continuous flow microfluidics due to laminar flow conditions. An alternative mixing strategy is presented based on the discreti ...
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Journal article2002 International Conference on Modeling and Simulation of Microsystems MSM 2002 · December 1, 2002
We present a performance comparison between two types of microfiuidic systems - continuous-flow systems and droplet-based systems. The comparison is based on a specific microfluidic application - a polymerase chain reaction (PCR) system. The modeling and s ...
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Journal article2002 International Conference on Modeling and Simulation of Microsystems MSM 2002 · December 1, 2002
This paper describes the role of SystemC in developing an integrated modeling and simulation environment for microelectrofluidic systems (MEFS). Based on the unique modeling and simulation needs for MEFS, we examine suitability of several existing simulati ...
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Journal articleSensors and Actuators B Chemical · November 15, 2002
A model is formulated to describe the dynamics of electro-wetting-induced transport of liquid droplets. The velocity of droplet transport as a function of actuation voltage is derived. The operating parameters include the viscosity of the droplet and the m ...
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Journal articleLab on a chip · May 2002
The serviceability of microfluidics-based instrumentation including 'lab-on-a-chip' systems critically depends on control of fluid motion. We are reporting here an alternative approach to microfluidics based upon the micromanipulation of discrete droplets ...
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Journal articleMicroelectronics Journal · 2002
This paper describes the role of SystemC in developing an integrated modeling and simulation environment for microelectrofluidic systems (MEFS). Based on the unique modeling and simulation needs for MEFS, we examine suitability of several existing simulati ...
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Journal articleIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 2002
Composite microsystems that integrate mechanical and fluidic components with electronics are emerging as the next generation of system-on-a-chip. Custom microsystems are expensive, inflexible, and unsuitable for high-volume production. The authors address ...
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Journal articleIEEE Transactions on Computer Aided Design of Integrated Circuits and Systems · December 1, 2001
We present an architectural design and optimization methodology for performing biochemical reactions using two-dimensional (2-D) electrowetting arrays. We define a set of basic microfluidic operations and leverage electronic design automation principles fo ...
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Journal article2001 International Conference on Modeling and Simulation of Microsystems MSM 2001 · December 1, 2001
We present an architectural design and optimization methodology for performing biochemical reactions using two-dimensional electrowetting arrays. We define a set of basic microfiuidic operations and leverage electronic design automation principles for syst ...
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Journal article2001 International Conference on Modeling and Simulation of Microsystems MSM 2001 · December 1, 2001
Custom microsystems are expensive, inflexible, and unsuitable for high-volume production. We address this problem by leveraging hardware/software co-design principles to design reconfigurable composite microsystems. We partition the system design parameter ...
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Journal article2001 International Conference on Modeling and Simulation of Microsystems MSM 2001 · December 1, 2001
A fully automatic macromodeling methodology to generate scalable reduced-order models for microelectromechanical systems is presented in this paper. Krylov subspace methods are used to generate reduced-order models from detailed higher-order models of the ...
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Journal article2001 International Conference on Modeling and Simulation of Microsystems MSM 2001 · December 1, 2001
This paper discusses the difficulties in current approaches to modeling and simulation of coupled-domain systems and presents new approaches and solutions to simulation execution and the model-simulation gap. The ongoing paradigm shift toward coupled-domai ...
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Journal article2001 International Conference on Modeling and Simulation of Microsystems MSM 2001 · December 1, 2001
We describe a method for estimating the Young's modulus of thin-film gold deposited on the poly2 layer in the MUMPs process is described. An optical detection system employing position sensitive detectors (PSD) is built to measure the bimetallic (gold/poly ...
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Journal article2001 International Conference on Modeling and Simulation of Microsystems MSM 2001 · December 1, 2001
A three-step technique for MEMS quality optimization is demonstrated. It exploits the relative merits of its constituent optimization components. Analog Devices' ADXL50 accelerometer was the test device with microstructure dimensions serving as design para ...
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Journal articleTechnical Digest International Electron Devices Meeting · December 1, 2001
In this work new data, models, and applications are presented of an ultra-low power, microfluidic device for use in integrated bio-microelectrofluidic systems (Bio-MEFS). The metal-insulator-solution transport (MIST) device is based on the high-speed manip ...
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Journal articleIEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing · 2001
With the development of increasingly complex microelectrofluidic devices and systems, system-level performance analysis is becoming an important aspect of design. System-level performance analysis is challenging because coupled-energy dynamics link system- ...
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Journal article2000 International Conference on Modeling and Simulation of Microsystems MSM 2000 · December 1, 2000
This paper presents the rationale, design, and simulation of next-generation microelectrofluidic system computational architectures for the emerging field of bioinformatics. Current microelectrofluidic processors (e.g. biochips) have largely dedicated arch ...
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Journal articleApplied Physics Letters · September 11, 2000
A microactuator for rapid manipulation of discrete microdroplets is presented. Microactuation is accomplished by direct electrical control of the surface tension through two sets of opposing planar electrodes fabricated on glass. A prototype device consist ...
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Journal articleProceedings of SPIE the International Society for Optical Engineering · January 1, 2000
MEMS (microelectromechanical systems) technology was used to fabricate bimetallic cantilever sensors for detecting the trinitrotoluene (TNT) and dinitrotoluene (DNT) residue found in mine fields. A number of experiments yielded reproducible results for the ...
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Journal articleMicroelectronics Journal · January 1, 2000
This paper describes an integrated approach to modeling and simulation of discrete, continuous, and combined discrete/continuous dynamical behavior of stochastic systems. Representational paradigms and simulation techniques are presented. Integration is ac ...
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Journal articleMaterials Research Society Symposium Proceedings · January 1, 2000
The early use of ion bombardment of semiconductors for forming doped regions was viewed as a room-temperature process by solid-state scientists. Many interesting, but relatively useless devices were made by implanting species such as Na and Cs ions to form ...
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Journal articleProceedings of SPIE - The International Society for Optical Engineering · 2000
MEMS (microelectromechanical systems) technology was used to fabricate bimetallic cantilever sensors for detecting the trinitrotoluene (TNT) and dinitrotoluene (DNT) residue found in mine fields. A number of experiments yielded reproducible results for the ...
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Journal articleIEEE Electron Device Letters · September 1, 1999
We have observed accelerated diffusion of B in ultrathin gate oxides during rapid thermal annealing (RTA) of the gate stack. Enhanced diffusion by 10-100 times over standard furnace annealing has been measured in SiO2. The activation energy for ...
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Journal articleJournal of the Electrochemical Society · April 1, 1999
A thermal model for the initiation of programming in metal-to-metal amorphous-silicon antifuses is described. The current and field crowding at the edges of the via cause the temperature at the via corners to increase due to Joule heating. Programming is i ...
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Journal articleProceedings of SPIE the International Society for Optical Engineering · January 1, 1999
MEMS (microelectromechanical systems) technology was used to fabricate arrays of sensors for detecting the explosive micro particulate residue found in mine fields. MEMS devices were fabricated by a surface micromachining process provided by MCNC. The sens ...
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Journal articleJ. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. (USA) · 1999
The transport of B atoms out of p+ polycrystalline silicon (poly-Si) gate electrodes through SiO2 gate oxides to the Si-SiO2 interface during dopant activation anneals degrades performance and reliability of hole-conducting (p-channel) field effect transis ...
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Journal articleProceedings of SPIE the International Society for Optical Engineering · December 1, 1998
We report on the development of MEMS devices for detecting explosive particles associated with anti-personnel mines. Because of the affinity of explosive substances for surfaces and owing to the high partition coefficients of explosives in soils relative t ...
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Journal articleJournal of Applied Physics · December 1, 1998
The ON state of metal-to-metal amorphous-silicon antifuses suffers from two reliability concerns: switch-off and de-stress failure. The switch-off current and de-stress lifetime are strongly dependent on the temperature of the conducting filament and hence ...
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Journal articleJournal of Applied Physics · November 1, 1998
A model for the growth of a conducting filament in metal-to-metal amorphous-silicon antifuses is presented. The transition from a high-resistance state to a low-resistance one is initiated by the formation of a localized hot spot. The growth of the filamen ...
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Journal articleJournal of Applied Physics · April 15, 1998
Observation has been made of a photonic enhancement effect during optical rapid thermal annealing (RTA) of high dose, As implants in Si. Arsenic implant activation using optical radiation heating from tungsten-halogen lamps, λpeak=0.8 μm, was co ...
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Journal articleProceedings of the IEEE · January 1, 1998
Ion implantation of dopant impurities to form p-n junctions and other doped regions in silicon transistors has evolved from an experimental curiosity in solid-state physics to become a dominant technology in today's integrated circuit manufacturing. This p ...
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Journal articleMicrosystem Technologies · January 1, 1998
A method for creating angled structures for use in microvalve devices applicable to control of liquid flow is presented. This technique utilizes a modified LIGA process with successive angled and rotated exposures into free standing acrylic sheets to form ...
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Journal articleProceedings of SPIE the International Society for Optical Engineering · December 1, 1997
We report on a new methodology for chemical detection of explosive particles associated with anti-personnel mines. Trace particle detection can be used to complement vapor detection of explosives with an electronic noise. Our approach is to remotely stimul ...
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Journal articleJournal of Applied Physics · July 15, 1997
Emissivity is a critical parameter in the rapid thermal processing (RTP) of semiconductors for temperature control and thermal modeling. It is often considered as a material property that depends on the sample temperature and surface finishing. For a silic ...
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Journal articleIEEE Electron Device Letters · June 1, 1997
Based on a network defect model for the diffusion of B in SiO 2, we propose that B diffuses via a peroxy linkage defect (pld) whose concentration in the oxide changes under different processing conditions. We show that as N is added to the gate ...
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Journal articleProc. SPIE - Int. Soc. Opt. Eng. (USA) · 1997
Integrated Force Arrays (IFAs) are thin film linear actuators which operate with substantial displacement and force. The methods of attachment of these devices to external systems are under development. Our current methods to incorporate IFAs in an scannin ...
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Journal articleJournal of the Electrochemical Society · January 1, 1997
Based on a network defect model for the diffusion of B in SiO2, we propose that B diffuses via a peroxy linkage defect whose concentration in the oxide changes under different processing conditions. We show that as the gate oxide is scaled below ...
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Journal articleMeasurement, Characterization and Modeling of Ultra-Shallow Doping Profiles in Semiconductors · 1997
The relationship between lateral and vertical impurity diffusion distances in silicon is mathematically well established for profiles that have been diffused at high temperature for a long time. And this relationship is experimentally verified. However, fo ...
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Journal articleIEEE Electron Device Letters · November 1, 1996
A network defect model suitable for use in process simulation is presented for the diffusion of B in SiO2 and, in particular, B in the presence of F and H2. We find that B diffuses via a peroxy linkage defect the concentration in the ...
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Journal articleIEEE Electron Device Letters · May 1, 1996
Based on a network defect model for the diffusion of B in SiO2, we propose that B diffuses via a peroxy linkage defect whose concentration in the oxide changes under different processing conditions. We show that as the gate oxide is scaled below ...
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Journal articleProceedings of SPIE the International Society for Optical Engineering · January 1, 1996
Integrated Force Arrays (IFAs) are thin film membrane actuators that act as transfer devices for electrostatic force. They are capable of large amplitude motion and evidence significant energies per unit volume (eg. 8.2 erg/mm 3). Devices which ...
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Journal articleTechnical Digest International Electron Devices Meeting · December 1, 1995
This work is describes the first unified network-defect-level model for B diffusion in SiO2 for use in process simulation. Models have been developed to explain silicon processing effects on B diffusion through thin gate oxides. With these model ...
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Journal articleElectronics Letters · January 1, 1994
A novel subquarter-micrometre MOSFET with a selfaligned source and drain, structure is proposed with elevated sources and drains formed by using polysilicon spacers. The spacers can reduce the effective channel length by 50% compared to the mask length, an ...
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Journal articleProceedings of SPIE the International Society for Optical Engineering · December 1, 1993
MCNC's research in flip chip processing has occurred over several years within the center and in concert with several universities. In order to make the research available to industry, a flip chip technology center (FCTC) has been established within MCNC t ...
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Journal articleProceedings of the Annual Conference on Engineering in Medicine and Biology · December 1, 1993
Microelectromechanical systems on a scale as small as a few micrometers can be fabricated using photolithographic and anisotropic etching processes on single crystal substrates such as silicon. Processing steps similar to those used to fabricate integrated ...
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Journal articleProc. IEEE (USA) · 1993
The goals and features of the Engineering Research Centers (ERC) Program, which was created in 1985 to improve engineering research and education in the US, are discussed. The creative approaches the centers have applied to research management, education, ...
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Journal articleMaterials Research Society Symposium Proceedings · January 1, 1993
The feasibility of using isothermal RTA in annealing ion implanted layers for forming junctions has been investigated for the past 10 years.While many of the scientific details surrounding defect formation, transient diffusion and dopant activation remain ...
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Journal articleMaterials Research Society Symposium Proceedings · January 1, 1993
The feasibility of using isothermal RTA in annealing ion implanted layers for forming junctions has been investigated for the past 10 years. While many of the scientific details surrounding defect formation, transient diffusion and dopant activation remain ...
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Journal articleIEEE Semi Advanced Semiconductor Manufacturing Conference and Workshop · January 1, 1992
The proof-of-concept (POC) facility model addresses the university-industry research gap and accelerates the transfer of new technology through engineering prototypes, data, and documentation. The generation of engineering prototypes which are qualified in ...
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Journal articleProceedings the Electrochemical Society · January 1, 1991
A simulation model was developed to describe the anomalous transient enhanced diffusion of implanted boron in silicon characterized by profiles in which a secondary peak is formed near the amorphous/crystalline interface. In this model, the diffusion equat ...
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Journal articleProceedings the Electrochemical Society · January 1, 1991
The supersaturation of point defects in silicon during the annealing of implantation damage causes a transient enhanced diffusion of dopants. A model describing the time constant for the transient enhanced diffusion of implanted dopants was developed based ...
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Journal articleIEEE Transactions on Computer Aided Design of Integrated Circuits and Systems · January 1, 1991
Twodimensional (2-D) effects are becoming increasingly important in the diffusion of impurities in submicrometer silicon devices. Existing process simulators cannot accurately model some of these effects. We describe a 2-D process simulator PREDICT2 that h ...
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Journal articleProceedings the Electrochemical Society · January 1, 1991
Silicon technology requires two-dimensional process simulation. However the complexity of such simulation has increased rapidly with decreasing device dimensions. This paper addresses some of the challenges for two-dimensional process simulation, such as-w ...
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Journal articleProceedings the Electrochemical Society · December 1, 1990
A three-stage model is proposed to describe SiO2 growth kinetics and the behavior of high concentrations of phosphorus in silicon during oxidation in dry oxygen in the thin-film regime. In the first stage, the formation of a silicide phase at th ...
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Journal articleProceedings the Electrochemical Society · December 1, 1990
A model is proposed to account for the effect of end-of-range (EOR) dislocations, produced by amorphizing implants, on the diffusion of phosphorus. It is shown that the location of EOR dislocations relative to the P profile is critical. For high concentrat ...
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Journal articleProceedings the Electrochemical Society · December 1, 1990
The effect of end-of-range (EOR) dislocation loops on phosphorus diffusion was studied in the diffusion of P implanted in single-crystal and preamorphized silicon. After annealing at 850°C for 5 to 60 min in an oxidizating ambient, P profiles obtained by s ...
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Journal articleSolid State Technology · May 1, 1990
The thermal budget available for sub 0.5 μm silicon processing decreases rapidly due to implantation damage-assisted diffusion, which derives junctions deeper than desired. Thus current ion implantation technology may not be practical for scaled 0.25 μm MO ...
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Journal articleJournal of the Electrochemical Society · February 1, 1990
Ion implantation damage produces point defects during annealing which can significantly enhance dopant diffusion. This diffusion at low temperatures was studied for P, As, and B implants in Si. Enhanced diffusion was observed below certain doping concentra ...
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Journal articleJournal of the Electrochemical Society · January 1, 1990
The two-dimensional diffusion of phosphorus has been studied by comparing profiles measured experimentally after furnace and rapid thermal annealing with simulated profiles obtained with the two-dimensional simulators SUPREM IV and PREDICT 2. It was first ...
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Journal articleJ. Electrochem. Soc. (USA) · 1990
For pt. I. see ibid., vol.134, p.1508 (1987). Defect generation during phosphorus diffusion at concentration levels below solid solubility was investigated from ion-implanted samples. Diffusions were performed in low oxygen ambient and in nitrogen with a s ...
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Journal articleJournal of the Electrochemical Society · January 1, 1990
Annealing ambient effects on dopant diffusion in silicon were investigated during low-temperature processing. BF2, P, and As were implanted at room temperature in (100) silicon through a 140Å thick layer of SiO2 with the ion beam norm ...
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Journal articleIEEE Transactions on Electron Devices · January 1, 1990
The tradeoffs between implant damage annealing and shallow junction formation are investigated. For very-low-energy amorphizing implants the time for damage anneal has a fourth-power dependence on depth below the Si surface. The depth effect depends on the ...
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Journal articleProceedings of the IEEE · January 1, 1990
The cost of manufacturing submicron, ultra-large-scale integration (ULSI) integrated circuits (ICs) is scaling upwards at least in inverse proportion to the downwards scaling of device feature sizes. These costs are driven by a parameter budget crisis asso ...
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Journal articleJournal of Applied Physics · December 1, 1989
The retardation phenomenon of oxygen precipitation in Czochralski silicon has been studied simultaneously with the growth of surface stacking faults under a silicon nitride capping layer. The surface faults were intentionally introduced to monitor the bulk ...
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Journal articleAdvances in Chemistry Series · December 1, 1989
Oxidation and diffusion in silicon are processes that significantly affect the fabrication of microelectronic devices. However, our knowledge of the fundamental principles governing these processes is inadequate, and this inadequacy affects our ability to ...
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Journal articleTechnical Digest International Electron Devices Meeting · December 1, 1989
Ion implantation damage produces point defects during annealing which can significantly enhance dopant diffusion. This diffusion at low temperatures was studied for P, As, and B implants in Si. Enhanced diffusion was observed below certain doping concentra ...
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Journal articleJournal of Electronic Materials · March 1, 1989
Low-thermal-budget annealing of ion-implanted BF 2 +, P, and As in Si was studied for shallow-junction formation. Implant doses were sufficient to amorphize the silicon surface region. Low-temperature furnace annealing and rapid-therm ...
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Journal articleNuclear Inst and Methods in Physics Research B · February 2, 1989
Damage introduced into the Si substrate by ion-implantation can have a profound effect on the diffusion of dopants during rapid thermal annealing (RTA) or low temperature furnace annealing. In this paper defect production models are discussed for three cas ...
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Journal articleNuclear Inst. and Methods in Physics Research, B · 1989
Damage introduced into the Si substrate by ion-implantation can have a profound effect on the diffusion of dopants during rapid thermal annealing (RTA) or low temperature furnace annealing. In this paper defect production models are discussed for three cas ...
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Journal articleApplied Physics Letters · December 1, 1988
A comparison has been made between two shallow preamorphization techniques using Si+ and Ge+ implantation, followed by B+ implantation and rapid thermal annealing (RTA). The subsequent impact on boron diffusion profiles and ...
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Journal articleApplied Physics Letters · December 1, 1988
Very low energy (6 keV) BF2+ ion implantation has been used to form very shallow (≤1000 Å) junctions in crystalline and Ge+ preamorphized Si. Low-temperature furnace annealing was used to regrow the crystal, and rapid therm ...
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Journal articleIEEE Transactions on Electron Devices · January 1, 1988
Low-thermal-budget processing models have Been developed that are applicable to a broad range of ion-implantation and annealing conditions. The cases discussed in this paper include low-temperature furnace annealing of B implants, preamorphization or posta ...
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Journal articleApplied Physics Letters · January 1, 1988
An experimental technique for the measurement of two-dimensional impurity diffusion profiles in silicon has been developed. Both the lateral and in-depth extent of dopant diffusion under a mask edge are magnified mechanically by sawing and angle lapping, a ...
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Journal articleApplied Physics Letters · January 1, 1988
BF+2 ions were implanted in (100) silicon at room temperature with an energy of 40 keV through a 140-Å-thick SiO2 layer. Boron profiling by secondary-ion mass spectrometry indicates that subsequent annealing in a convention ...
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Journal articleJournal of Applied Physics · December 1, 1987
The influence of HCl on the oxidation-enhanced diffusion of boron and arsenic in silicon has been studied. Experimental data at 1000, 1100, and 1150 °C were obtained using secondary ion mass spectrometry (SIMS). A previously proposed empirical model was us ...
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Journal articleSemiconductor International · December 1, 1987
The development of advanced computer-aided engineering and design (CAE/CAD) tools has greatly enhanced the ability of U. S. manufacturers to quickly design a product. Process development is an engineering-intensive effort, perpaps even more so than the IC ...
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Journal articleundefined · December 1, 1987
A robust, accurate process simulator, PREDICT 1. 1, has been written that is based on tightly coupled simulation models. Model coupling is accounted for by using an internal decision tree that activates models on the basis of prior wafer processing. Thus, ...
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Journal articleJournal of Materials Research · January 1, 1987
The expression used for electric field in the article being discussed is not appropriate for the experimental conditions, but there is a built-in electric field present that affects Sb diffusion. Thus the calculated values of D are reasonably within the ex ...
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Journal articleJournal of the Electrochemical Society · January 1, 1987
The goal of the present research was to investigate the proposal that P diffusion at concentrations above solid solubility generates silicon self-interstitials. Buried layers of As and Sb were created by either implanting Sb at 150 keV, 5 x 1013 ...
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Journal articleJ. Mater. Res. (USA) · 1987
R.B. Fair et al. have analyzed original data on the effect of heavy, uniform background doping with As and B on the diffusivity of Sb in Si at 1000°-1200°C. Their analysis attributed a role to `electric fields' and led to the conclusion that, for n ...
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Journal articleTechnical Digest International Electron Devices Meeting · January 1, 1987
Submicrometer technologies include low thermal budget processing, Ge** plus or Si** plus preamorphization implants, ultra low-energy B and As implants, thin oxides, and silicide contacts. These technologies and the models required to simulate them are not ...
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Journal articleJournal of Vacuum Science and Technology A Vacuum Surfaces and Films · January 1, 1986
Observations of enhanced dopant diffusion during rapid thermal annealing (RTA) have been made and correlated with the existence of the following phenomena: (1) amorphization of the ion implanted layer; (2) damage-induced dislocation formation; (3) damage a ...
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Journal articleMaterials Research Society Symposia Proceedings · December 1, 1985
The diffusion of B and As in mechanically stressed silicon has been investigated for initial implant doses of 10**1**3, 10**1**4, and 10**1**5 cm** minus **2, over a range of annealing temperatures. At stresses near the silicon yield point, no significant ...
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Journal articleMaterials Research Society Symposia Proceedings · December 1, 1985
Enhanced dopant diffusion during rapid thermal annealing (RTA) depends whether the following physical phenomena occur individually or in combination: (1) amorphization of the Si, (2) damage-induced dislocation formation, (3) damage annealing, (4) self-inte ...
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Journal articleProceedings of SPIE the International Society for Optical Engineering · April 9, 1985
A new one-dimensional.process estimator for the Resign of X£ technologies (PREDICT) has been developed which rigorously solves coupled equations describing dopant behavior under modern processing conditions. All of the models in PREDICT have been verified ...
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Journal articleElectrochemical Society Extended Abstracts · January 1, 1985
A curve-fitting model has been developed to calculate as-implanted profiles for As, B and P ions implanted into crystalline silicon. In general, good agreement was shown to exist between the calculated profiles and the experimental profiles for specific im ...
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Journal articleIEEE Journal of Solid-State Circuits · 1985
Charge feedthrough in analog MOS switches has been measured. The dependence of the feedthrough voltage on the input and tub voltages, device dimensions, and load capacitances was characterized. Most importantly, it was observed that the feedthrough voltage ...
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Journal articleundefined · January 1, 1985
Silicon self-interstitials and vacancies are known to influence atomic diffusion in silicon. While the dual mechanism has been established, to clearly elucidate the roles that vacancies and self-interstitials play, it is necessary to understand their inter ...
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Journal articleIEEE Journal of Solid State Circuits · January 1, 1985
Charge feedthrough in analog MOS switches has been measured. The dependence of the feedthrough voltage on the input and tub voltages, device dimensions, and load capacitances was characterized. Most importantly, it was observed that the feedthrough voltage ...
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Journal articleProceedings the Electrochemical Society · December 1, 1984
A computer model of oxygen-precipitate nucleation, growth and dissolution, and oxygen outdiffusion from a silicon wafer surface has been developed. The model assumes homogeneous nucleation and uses nucleation and growth expressions available in the literat ...
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Journal articleElectrochemical Society Extended Abstracts · December 1, 1984
As both the adverse and the beneficial effects of oxygen in Czochralski grown silicon become clear, the need to precisely control its behavior is apparent. Of great utility to the wafer processing engineer would be a quantitative means to predict oxygen pr ...
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Journal articleIEEE Transactions on Electron Devices · January 1, 1984
Accurate calculations of diffusion and ion-implantition processes in silicon require the utilization of complex steady-state physical models that include the effects of both vacancies and self-intersti tials. A new one-dimensional computer program, PROSIM ...
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Journal articleDiffus. Defect Data (Switzerland) · 1984
Research in the areas of self-diffusion and dopant diffusion in Si has focused on the identification of the specific mechanisms and point defects involved. Recent approaches include the observation of the effects of diffusion and doping on stacking fault g ...
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Journal articleIEEE Transactions on Electron Devices · 1984
Accurate calculations of diffusion and ion-implantation processes in silicon require the utilization of complex steady-state physical models that include the effects of both vacancies and self-interstitials. A new one-dimensional computer program, PROSIM I ...
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Journal articleJournal of the Electrochemical Society · January 1, 1984
Rapid thermal annealing (RTA) of high dose B and As implants is believed to produce large transients of point defects that may exist for the duration of the anneal (2-30s). Enhanced diffusion during RTA of boron implants >1015cm-2is r ...
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Journal articleJournal of Applied Physics · December 1, 1983
The rate of oxygen precipitation in Czochralski-grown silicon with oxygen supersaturation ratios s>5 and s<5 at 1000°C was studied as a function of surface processing. Reference samples were compared with samples diffused with high-concentration phosphorus ...
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Journal articleIEEE Transactions on Electron Devices · January 1, 1983
The aging behavior of MOSFET's encapsulated with various types of capping layers was studied. Aging consisted of room-temrerature pulsed gate bias operation with a drain-to-source voltage sufficient to cause avalanche multiplication in the channel. It was ...
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Journal articleIEEE Spectr. (USA) · 1983
Strategies for development of fifth-generation computers in Japan, the United States, and Western Europe are compared and contrasted briefly in a short introductory article. Individual approaches are then explored in depth in a series of short articles. Th ...
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Journal articleIEEE Transactions on Electron Devices · 1983
The aging behavior of MOSFET's encapsulated with various types of capping layers was studied. Aging consisted of room-temperature pulsed gate bias operation with a drain-to-source voltage sufficient to cause avalanche multiplication in the channel. It was ...
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Journal articleJournal of the Electrochemical Society · January 1, 1982
The effect of dopant concentration on the shrinkage of oxidation-induced stacking faults (OSF) in silicon during N2 annealing has been controversial. In this work, we demonstrate that OSF shrinkage during N2 annealing can be enhanced ...
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Journal articleSolid State Technology · January 1, 1982
The act of heating and cooling a silicon wafer in order to perform thermal diffusion and oxidation can introduce or produce point defects, dissolved impurities, microdefects and strain. In addition, the silicon surface bonding arrangements can be altered. ...
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Journal articleJ ELECTROCHEM SOC · 1982
THE EFFECT OF DOPANT CONCENTRATION ON THE SHRINKAGE OF OXIDATION-INDUCED STACKING FAULTS (OSF) IN SILICON DURING N//2 ANNEALING HAS BEEN CONTROVERSIAL. IN THIS WORK, THE AUTHORS DEMONSTRATE THAT OSF SHRINKAGE DURING N//2 ANNEALING CAN BE ENHANCED BY THE PR ...
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Journal articleIEEE Transactions on Electron Devices · January 1, 1981
Hydrogen introduced and trapped in the gate oxide of MOSFET's by the silicon-nitride capping process can be activated by emitted holes from the MOSFET channel to produce a large threshold-voltage shift. This effect requires avalanche multiplication in the ...
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Journal articleJournal of the Electrochemical Society · January 1, 1981
As a result of a large body of literature on oxidation, impurity diffusion, and defect growth in silicon, a consistent picture has emerged of oxidation-enhanced diffusion (OED) and oxidation-induced, stacking fault growth (OISF). It is believed that silico ...
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Journal articleSens. Actuators (Switzerland) · 1981
Fundamental theories of diffusion and molecular transport are reviewed as a starting point for understanding the complex migration processes in solids. It is shown that in diffusion the author determines which of a number of lattice defects controls the di ...
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Journal articleIEEE Transactions on Electron Devices · 1981
Hydrogen introduced and trapped in the gate oxide of MOSFET's by the silicon-nitride capping process can be activated by emitted holes from the MOSFET channel to produce a large threshold-voltage shift. This effect requires avalanche multiplication in the ...
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Journal articleSensors and Actuators · 1981
Fundamental theories of diffusion and molecular transport are reviewed as a starting point for understanding the complex migration processes in solids. It is shown that in diffusion one must determine which of a number of lattice defects controls the diffu ...
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Journal articleJournal of Applied Physics · December 1, 1980
The question of whether the monovacancy or the self-interstitial is the point defect responsible for impurity diffusion is reviewed in the light of buried marker diffusion experiments and irradiation-enhanced diffusion data. It is concluded that coupled va ...
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Journal articleTechnical Digest International Electron Devices Meeting · January 1, 1980
Authors report a model to explain the observed degradations in MOSFET performance based upon channel hot hole emission. ...
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Journal articleJournal of Applied Physics · December 1, 1979
An approximate theory of laser-induced diffusion in Si is presented. Starting with the concept of molecular motion in liquids, the self-diffusion coefficient of liquid Si at the melting temperature is calculated. By introducing the temperature dependence o ...
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Journal articleJournal of Applied Physics · December 1, 1979
A strain effect has been found to explain the anomalous reduction in P diffusivity at surface concentrations greater than ∼4×1020 cm-3. It is shown that at diffusion temperatures, misfit-induced strain causes a reduction in the effect ...
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Journal articleInstitute of Physics Conference Series · December 1, 1979
A strain effect has been found to explain the anomalous reduction of phosphorus diffusivity in Si at surface concentrations greater than about 4 multiplied by 10**2**0 cm** minus **3. It is shown that band-gap narrowing results in reduce P diffusivity thro ...
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Journal articleJournal of the Electrochemical Society · January 1, 1978
The conditions under which misfit dislocations are generated during phosphorus diffusion in silicon are discussed. Van der Merwe's concept of critical misfit is used to determine the critical surface region depth for a given P surface concentration which c ...
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Journal articleJ. Electrochem. Soc. (USA) · 1978
A theory of B segregation is developed which accounts for the differences in m observed in, for example, diffusion from a highly doped B2O3 source as compared to oxidation of B-doped Si in wet and dry oxidizing ambients. Most dry O2 oxidations are really o ...
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Journal articleJournal of the Electrochemical Society · January 1, 1978
Using the Fair-Tsai model of P diffusion in Si, equations have been derived which relate the total P concentration, electron concentration, sheet resistance, and junction depth of a P-diffused layer. Curves are presented which show surface concentration as ...
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Journal articleJournal of the Electrochemical Society · January 1, 1978
A theory of B segregation is developed which accounts for the differences in m observed in, for example, diffusion from a highly doped B2O3 source as compared to oxidation of B-doped Si in wet and dry oxidizing ambients. We have found that most dry O2 oxid ...
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Journal articleJournal of the Electrochemical Society · January 1, 1977
A consistent model of P diffusion in Si is presented which accounts quantitatively for the existence of electrically inactive P, the “kink” and the tail regions of the P profile, and the emitter dip effect. In this model it is shown that three intrinsic P ...
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Journal articleIEEE Transactions on Electron Devices · January 1, 1976
Implanted-diffused As layers in Si have been well-characterized and have been used in fabricating low-voltage n-p junctions. It is shown that these As layers form linearly graded junctions with a uniform B-doped background (ρ ≃ 0.006 Ω·cm). The grade const ...
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Journal articleIEEE Transactions on Nuclear Science · January 1, 1976
A review is presented of design considerations for GaAs Schottky-barrier FETs and other types of transistors in low-noise amplifiers for capacitive sources which are used in nuclear radiation detectors and high speed fiberoptic communication systems. Ultim ...
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Journal articleJ. Electrochem. Soc. (USA) · 1976
Equations have been derived that describe the important profile variables that are required to characterize the diffusion of As implanted layers for which the surface concentration is greater than ~1×1019 cm-3. In addition, data obtained from differe ...
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Journal articleIEEE Transactions on Electron Devices · 1976
Following a verification of the calculated I-V curves and their temperature dependence as a function of grade constant, calculated curves are presented which correlate As implant dose and diffusion with junction breakdown voltage, breakdown impedance, and ...
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Journal articleIEEE Trans. Nucl. Sci. (USA) · 1976
A review is presented of design considerations for GaAs Schottky-barrier FETs and other types of transistors in low-noise amplifiers for capacitive sources which are used in nuclear radiation detectors and high speed fiber-optic communication systems. Ulti ...
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Journal articleJournal of the Electrochemical Society · January 1, 1975
The diffusion of ion-implanted B in Si in the presence of a uniform background of high concentration P or As has been studied by correlating numerical profile calculations with profiles determined by secondary-ion mass spectrometry (SIMS). Retarded B diffu ...
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Journal articleSolid State Electronics · January 1, 1975
Secondary ion mass spectrometry has been employed to reveal the gettering of implanted B by an annealed, implanted Sb layer. It is shown that the gettering of B is significant, and may be caused by electric-field-enhanced diffusion of the B as well as by s ...
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Journal articleJournal of the Electrochemical Society · January 1, 1975
Boron is almost universally used as a p-type dopant in Si devices. Since this dopant is introduced into the Si lattice under a wide range of diffusion conditions, effects are often observed which appear anomalous because the mechanism of B diffusion is not ...
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Journal articleJournal of the Electrochemical Society · January 1, 1975
In order to characterize implanted-diffused As layers in Si and to develop general processing information, impurity profiles were determined by secondary ion mass spectrometry (SIMS) and differential conductivity measurements. An analysis of these profiles ...
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Journal articleundefined · January 1, 1975
Implanted-diffused As layers in Si have been well-characterized, and have been used in fabricating low-voltage n-p junctions. It is shown that these As layers form linearly-graded junctions with a uniform B-doped background. The grade constant of the As pr ...
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Journal articleSolid State Electronics · January 1, 1974
Simultaneous diffusions of As and B from predeposited layers (chemical source or ion implantation) have been used in order to fabricate the emitter and base regions, respectively, of microwave transistors. Mathematical simulations of the doping profiles in ...
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Journal articleIEEE Transactions on Electron Devices · January 1, 1974
Two-dimensional numerical solutions of Poisson's equation and the carrier continuity equation for the short-gate GaAs field-effect transistor structure have been used to predict device performance. However, a generally accepted simplified approach to FET d ...
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Journal articleApplied Physics Letters · December 1, 1973
The recent experimental results of Ziegler, Cole, and Baglin showed that in sequentially diffused boron-arsenic npn silicon transistors, an unexplained depletion of boron occurs near the emitter-base junction. This depletion effect could have an appreciabl ...
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Journal articleJournal of Applied Physics · December 1, 1973
When As is sequentially diffused into Ga or B-doped Si, a retardation of the p -type base layer is generally observed. This is in contrast to the "emitter-push" effect associated with sequential phosphorus diffusions. In order to simulate transistor profil ...
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Journal articleJournal of Applied Physics · December 1, 1973
In attempting to calculate the anomalous transistor profiles published by Ziegler, Cole, and Baglin, it was necessary to assume the shape of the initial B profile. A complementary error function distribution was used, based upon their published junction de ...
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Journal articleJournal of Applied Physics · December 1, 1973
It has been observed that considerable discrepancy occurs between total As in Si diffusion profiles obtained by Irvin's curve and those determined by neutron-activation analysis. This discripancy can be explained in terms of the formation of inactive [V
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Journal articleJournal of Applied Physics · December 1, 1973
When As diffuses into Si, only a fraction of the As remains electrically active. Because of the importance of As as an emitter dopant, it is necessary to understand the nature of the inactive As and how it affects the solubility and diffusion of As+
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Journal articleIEEE Transactions on Electron Devices · January 1, 1973
The influence of As surface concentration CsE on the emitter efficiency βϒ and the temperature dependence of βϒ are reported. The theoretical model that is used to explain the variation ofβϒ with CSE is based upon the difference in the effective energy ban ...
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Journal articleIEEE Trans. Electron Devices (USA) · 1973
The influence of As surface concentration CSE on the emitter efficiency βγ and the temperature dependence of βγ are reported. The theoretical model that is used to explain the variation of βγ with CSE is based upon the diff ...
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Journal articleIEEE Transactions on Electron Devices · 1973
It is the purpose of this paper to present the results of an investigation of the optimization of beta // gamma with respect to the As emitter surface concentration C//S//E. The theoretical model that will be used to explain the dependence of beta // gamma ...
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Journal articleJournal of Applied Physics · December 1, 1972
In order to facilitate surface concentration estimation for arsenic diffusion, a simple expression has been derived which is dependent only upon the junction depth xJ and the sheet resistance Rs: C s = 1.56 × 1017
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Journal articleIEEE Transactions on Electron Devices · January 1, 1972
It has been found that a harmonic analysis of the usual power-law transfer characteristic of the JFET does not yield equations which accurately predict the third-harmonic distortion products for short-gate structures. However, if field-dependent mobility i ...
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Journal articleJournal of the Electrochemical Society · January 1, 1972
The properties of As-doped SiO//2 and As-doped Ge/SiO//2 diffusion sources as a function of the O//2 concentration in a horizontal, open-tube deposition chamber are examined. The effect of the Ge doping in the oxide is to enhance the etch rate and to reduc ...
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Journal articleIEEE Trans. Electron Devices (USA) · 1972
It has been found that a harmonic analysis of the usual power-law transfer characteristic of the JFET does not yield equations which accurately predict the third-harmonic distortion products for short-gate structures. However, if field-dependent mobility i ...
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Journal articleJournal of Physics E Scientific Instruments · December 1, 1971
In order to eliminate the problem of calibration in beam spot size measurements, a wide slit scanning technique has been developed. As the beam scans across the edge of a slit, the ions or electrons are collected, and the resulting signal is displayed on a ...
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Journal articleJournal of Applied Physics · December 1, 1971
In order to establish an upper limit on the practicality and usefulness of ion-beam deposition of thin films, an experimental beam-deposition system was assembled which was capable of producing an ideally focused ion beam. The system was designed under the ...
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Journal articleJ. Electrochem. Soc. (USA) · 1971
The use of the step-junction approximation for calculating the net doping density from C-V measurement data can lead to serious errors in the resulting profiles for sequentially diffused structures. Non-step junction behavior can be accounted for if the eq ...
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Journal articleJ. Mater. Res. (USA)
The diffusion of Sb in heavily doped n- and p-type Si has been studied to determine the activation energies and charge states of the point defects responsible for Sb diffusion. It is shown that neutral point defects, probably Vx, dominate under intrinsic d ...
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