Tania Roy

Conference IEEE International Reliability Physics Symposium Proceedings · January 1, 2026 Bulk traps play a critical role in the reliability of GaN-based devices; however, existing characterization techniques are limited in their ability to simultaneously resolve trap energy, spatial location, and density. In this work, a redefined AC transcond ... Full text Cite

DirectGeMM: Eliminating the GeMV Bottleneck in Analog In-Memory Computing

Conference Proceedings IEEE International Symposium on Circuits and Systems · January 1, 2026 General matrix-matrix multiplication (GeMM) dominates 40-95% of AI workload execution time, but existing in-memory computing (IMC) architectures suffer from a fundamental cycle bottleneck, decomposing GeMM into sequential general matrix-vector multiplicati ... Full text Cite

AC Transconductance (AC-Gm) Method for Spatial and Energy Profiling of Bulk Traps in GaN MESFETs

Conference Device Research Conference Conference Digest Drc · January 1, 2025 The AC transconductance (AC-G m) method, first proposed by T. P. Ma, measures oxide trap densities as a function of both space and energy in field effect transistors (FETs) lacking a body contact [1-3]. In MOSFETs, channel carriers tunnel into oxide traps. ... Full text Cite

Two-Terminal Self-Rectifying Metal-Insulator-MoS2 Optoelectronic Synapse for Neuromorphic Vision Systems

Conference Device Research Conference Conference Digest Drc · January 1, 2025 Optoelectronic synapses are promising candidates for in-sensor computing systems due to their ability to process and retain light-sensitive input. Furthermore, two terminal devices have the advantage of simpler fabrication and higher-density integration co ... Full text Cite

Can High-Temperature PBTI Testing Predict Dual-Gated ITO FET Long-term Reliability?

Conference Technical Digest International Electron Devices Meeting Iedm · January 1, 2025 We study positive bias temperature instability (PBTI) in a dual-gated (DG) indium tin oxide (ITO) FET at room temperature (RT), 85°C and 125°C. We report record low threshold voltage shift, ΔVth~ -37.8 mV for top gate stress (2V) at 125°C. At hi ... Full text Cite

First Demonstration of Positive Threshold in Dual-Gated ITO FETs with ZrO2 Dielectric

Conference Technical Digest International Electron Devices Meeting Iedm · January 1, 2025 We demonstrate the first enhancement-mode dual-gated (DG) indium tin oxide (ITO) transistors with positive threshold (VTh), addressing the negative VTh challenge in amorphous oxide semiconductor (AOS) devices for monolithic 3D integra ... Full text Cite

The Artificial Intelligent Pixel (aiPixel)

Conference Proceedings of SPIE the International Society for Optical Engineering · January 1, 2022 The Artificial Intelligent Pixel (aiPixel), a novel in-pixel neural network based on the deconstruction of traditional sensor pixels is presented for the first time for detection, processing and digitizing at the pixel resulting in overall data reduction, ... Full text Cite

Artificial Neuron using Ag/2D-MoS/Au Threshold Switching Memristor

Conference Device Research Conference Conference Digest Drc · June 1, 2019 The phenomenal evolution of information and communication drives future technologies towards highly parallel, energy-efficient self-learning systems like the human brain. The limitations of current von Neumann computation systems have paved the way for art ... Full text Cite

Linear Weight Update in MoS/Graphene Memristive Synapses for Unsupervised Learning

Conference Device Research Conference Conference Digest Drc · June 1, 2019 Memristive synaptic devices are considered one of the most promising candidates for brain-inspired neuromorphic computing, owing to their decreased complexity and nanoscale footprint compared to conventional complementary metal oxide semiconductor (CMOS) c ... Full text Cite

Artificial Neuron using MoS2/graphene threshold switching memristors

Conference Device Research Conference Conference Digest Drc · August 20, 2018 With the ever-increasing demand for low power electronics, neuromorphic computing has garnered huge interest in recent times. Artificial neurons form a critical part in neuromorphic circuits, and have been realized with complex CMOS circuitry in the past. ... Full text Cite

2D layered materials: From materials properties to device applications

Conference Technical Digest International Electron Devices Meeting Iedm · February 16, 2015 An overview of material properties and the current state of electronic devices based on 2D layered materials is presented. Atomic scale smoothness, varying band alignment and sizeable bandgaps in the single layer limit make this class of materials very int ... Full text Cite

Forming-free resistive switching with low current operation in graphene-insulator-graphene structures

Conference Device Research Conference Conference Digest Drc · December 16, 2013 Full text Cite

Integration and characterization of graphene-insulator-graphene junctions

Conference Ecs Transactions · October 21, 2013 Graphene-insulator-graphene tunnel junctions have been fabricated and characterized. The cleaning processes for chemical vapor deposited graphene and integration of barrier engineered atomic layer deposited tunnel dielectrics is presented. Initial results ... Full text Cite

Oxygen-related border traps in MOS and GaN devices

Conference Icsict 2012 2012 IEEE 11th International Conference on Solid State and Integrated Circuit Technology Proceedings · December 1, 2012 Oxygen-related border traps cause low-frequency excess (1/f) noise in MOS transistors with SiO2 gate dielectrics and GaN/AlGaN HEMTs. In each case, the noise is associated with a reconfiguration of the microstructure of near-interfacial defects ... Full text Cite

Reliability of III-V devices - The defects that cause the trouble

Conference Microelectronic Engineering · February 1, 2012 Degradation of electronic devices by hot electrons is universally attributed to the generation of defects, but the mechanisms for defect generation and the specific nature of the pertinent defects are not known for most systems. Here we describe three rece ... Full text Cite

Radiation-induced defect evolution and electrical degradation of AlGaN/GaN high-electron-mobility transistors

Conference IEEE Transactions on Nuclear Science · December 1, 2011 Threshold-voltage shifts and increases in 1/f noise are observed in proton-irradiated AlGaN/GaN high-electron-mobility transistors, indicating defect-mediated device degradation. Quantum mechanical calculations demonstrate that low-energy recoils caused by ... Full text Cite

Reliability-limiting defects in AlGaN/GaN HEMTs

Conference IEEE International Reliability Physics Symposium Proceedings · June 23, 2011 Low-frequency noise measurements and density functional theory calculations are combined to show that N-anti-site and C impurity defects can lead to changes in the low frequency noise of GaN/AlGaN HEMTs fabricated with three typical process conditions. Imp ... Full text Cite

1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions

Conference Microelectronics Reliability · February 1, 2011 The magnitude of the low-frequency 1/f noise in GaN/AlGaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions varies in response to hot-electron stress. Density-functional-theory (DFT) calculations show that the Ga vacancies that are resp ... Full text Cite

Process dependence of proton-induced degradation in GaN HEMTs

Conference IEEE Transactions on Nuclear Science · December 1, 2010 The 1.8-MeV proton radiation responses are compared for AlGaN/GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions. The NH 3-rich devices are more susceptible to proton irradiation than the Ga-rich and N-rich devices. The 1/ ... Full text Cite

Single event mechanisms in 90 nm triple-well CMOS devices

Conference IEEE Transactions on Nuclear Science · December 1, 2008 Single event charge collection mechanisms in 90 nm triple-well NMOS devices are explained and compared with those of dual-well devices. The primary factors affecting the single event pulse width in triple-well NMOSFETs are the separation of deposited charg ... Full text Cite