Buckley, J., Pro, T., Barattin, R., Calborean, A., Gely, M., Huang, K., … Ghibaudo, G. (2008). On the Influence of Molecular Linker on Charge Transfer Rate in Hybrid Molecular (Ferrocene)/Silicon Field Effect Memories. In 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design (pp. 68–71). IEEE. https://doi.org/10.1109/nvsmw.2008.26

Buckley, J., T. Pro, R. Barattin, A. Calborean, M. Gely, K. Huang, G. Delapierre, et al. “On the Influence of Molecular Linker on Charge Transfer Rate in Hybrid Molecular (Ferrocene)/Silicon Field Effect Memories.” In 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, 68–71. IEEE, 2008. https://doi.org/10.1109/nvsmw.2008.26.

Buckley J, Pro T, Barattin R, Calborean A, Gely M, Huang K, et al. On the Influence of Molecular Linker on Charge Transfer Rate in Hybrid Molecular (Ferrocene)/Silicon Field Effect Memories. In: 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design. IEEE; 2008. p. 68–71.

Buckley, J., et al. “On the Influence of Molecular Linker on Charge Transfer Rate in Hybrid Molecular (Ferrocene)/Silicon Field Effect Memories.” 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, IEEE, 2008, pp. 68–71. Crossref, doi:10.1109/nvsmw.2008.26.

Buckley J, Pro T, Barattin R, Calborean A, Gely M, Huang K, Delapierre G, Duclairoir F, Jalaguier E, Maldivi P, De Salvo B, Deleonibus S, Ghibaudo G. On the Influence of Molecular Linker on Charge Transfer Rate in Hybrid Molecular (Ferrocene)/Silicon Field Effect Memories. 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design. IEEE; 2008. p. 68–71.