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Electrically Reconfigurable Floating Gate Optoelectronic Synaptic Pixels for In-sensor Convolutional Image Feature Extraction with Built-in Contrast Enhancement.

Journal articles  - Journal Article
Rahman, MS; Hashemkhani, S; Sarkar, A; Chen, J; Chen, C; Redwing, JM; Kubendran, R; Roy, T
Published in: ACS nano
May 2026

Image feature extraction and enhancement are fundamental operations in real-time object detection using convolutional neural networks (CNNs). In conventional architectures, continuous data transfer between sensors, memory, and processing units leads to high energy consumption and latency. In-pixel computing using optoelectronic synaptic (OS) devices offers a promising solution by enabling sensing and computation within the same hardware. However, most OS studies remain primarily device-centric and lack circuit-level considerations necessary for scalable system integration. Here, we present a two-dimensional material-based floating-gate optoelectronic synapse (FG-OS) that integrates device innovation with circuit codesign for CMOS-compatible in-pixel computing. The FG-OS employs large-area monolayer molybdenum disulfide (MoS2) as the photoactive channel and bilayer graphene as the floating gate, enabling high optical responsivity even under low-light conditions. The device exhibits a superlinear photoresponse that intrinsically enhances image contrast during sensing. Importantly, the device supports low-voltage, circuit-friendly analog conductance modulation through fully electrical programming, eliminating the need for optical potentiation and simplifying array implementation. The codesigned architecture encodes 4-bit light-intensity-dependent information (16 levels) with strong robustness against cycle-to-cycle and device-to-device variations. Furthermore, we demonstrate in-pixel convolutional operations, including edge detection, image sharpening, and Gaussian blurring. These results highlight the computational versatility of the FG-OS array and establish a scalable pathway toward in-sensor processing and single-layer CNN architectures for intelligent vision systems.

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Published In

ACS nano

DOI

EISSN

1936-086X

ISSN

1936-0851

Publication Date

May 2026

Volume

20

Issue

20

Start / End Page

14799 / 14812

Related Subject Headings

  • Nanoscience & Nanotechnology
 

Citation

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Chicago
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Rahman, M. S., Hashemkhani, S., Sarkar, A., Chen, J., Chen, C., Redwing, J. M., … Roy, T. (2026). Electrically Reconfigurable Floating Gate Optoelectronic Synaptic Pixels for In-sensor Convolutional Image Feature Extraction with Built-in Contrast Enhancement. ACS Nano, 20(20), 14799–14812. https://doi.org/10.1021/acsnano.6c03713
Rahman, Md Sazzadur, Shahin Hashemkhani, Arijit Sarkar, Jiazheng Chen, Chen Chen, Joan M. Redwing, Rajkumar Kubendran, and Tania Roy. “Electrically Reconfigurable Floating Gate Optoelectronic Synaptic Pixels for In-sensor Convolutional Image Feature Extraction with Built-in Contrast Enhancement.ACS Nano 20, no. 20 (May 2026): 14799–812. https://doi.org/10.1021/acsnano.6c03713.
Rahman MS, Hashemkhani S, Sarkar A, Chen J, Chen C, Redwing JM, et al. Electrically Reconfigurable Floating Gate Optoelectronic Synaptic Pixels for In-sensor Convolutional Image Feature Extraction with Built-in Contrast Enhancement. ACS nano. 2026 May;20(20):14799–812.
Rahman, Md Sazzadur, et al. “Electrically Reconfigurable Floating Gate Optoelectronic Synaptic Pixels for In-sensor Convolutional Image Feature Extraction with Built-in Contrast Enhancement.ACS Nano, vol. 20, no. 20, May 2026, pp. 14799–812. Epmc, doi:10.1021/acsnano.6c03713.
Rahman MS, Hashemkhani S, Sarkar A, Chen J, Chen C, Redwing JM, Kubendran R, Roy T. Electrically Reconfigurable Floating Gate Optoelectronic Synaptic Pixels for In-sensor Convolutional Image Feature Extraction with Built-in Contrast Enhancement. ACS nano. 2026 May;20(20):14799–14812.
Journal cover image

Published In

ACS nano

DOI

EISSN

1936-086X

ISSN

1936-0851

Publication Date

May 2026

Volume

20

Issue

20

Start / End Page

14799 / 14812

Related Subject Headings

  • Nanoscience & Nanotechnology