Controlling and measuring a single donor electron in silicon
Publication
, Conference
Brown, KR; Sun, L; Bryce, B; Kane, BE
Published in: PHYSICS OF SEMICONDUCTORS, PTS A AND B
2005
Duke Scholars
Published In
PHYSICS OF SEMICONDUCTORS, PTS A AND B
ISSN
0094-243X
ISBN
0-7354-0257-4
Publication Date
2005
Volume
772
Start / End Page
1437 / 1438
Citation
APA
Chicago
ICMJE
MLA
NLM
Brown, K. R., Sun, L., Bryce, B., & Kane, B. E. (2005). Controlling and measuring a single donor electron in silicon. In PHYSICS OF SEMICONDUCTORS, PTS A AND B (Vol. 772, pp. 1437–1438).
Brown, K. R., L. Sun, B. Bryce, and B. E. Kane. “Controlling and measuring a single donor electron in silicon.” In PHYSICS OF SEMICONDUCTORS, PTS A AND B, 772:1437–38, 2005.
Brown KR, Sun L, Bryce B, Kane BE. Controlling and measuring a single donor electron in silicon. In: PHYSICS OF SEMICONDUCTORS, PTS A AND B. 2005. p. 1437–8.
Brown, K. R., et al. “Controlling and measuring a single donor electron in silicon.” PHYSICS OF SEMICONDUCTORS, PTS A AND B, vol. 772, 2005, pp. 1437–38.
Brown KR, Sun L, Bryce B, Kane BE. Controlling and measuring a single donor electron in silicon. PHYSICS OF SEMICONDUCTORS, PTS A AND B. 2005. p. 1437–1438.
Published In
PHYSICS OF SEMICONDUCTORS, PTS A AND B
ISSN
0094-243X
ISBN
0-7354-0257-4
Publication Date
2005
Volume
772
Start / End Page
1437 / 1438