On the sputtering of binary compounds
Publication
, Journal Article
Haff, PK; Switkowski, ZE
Published in: Applied Physics Letters
December 1, 1976
A simple physical model is presented to describe some aspects of the sputtering of compound targets. In particular, expressions are developed for the partial sputtering yields for binary systems in terms of the elemental sputtering rates, the stoichiometric concentrations, and surface binding energy. The partial yields depend nonlinearly on the bulk target concentrations. Comparison of the theoretical predictions with the data on sputtering of PtSi, NiSi, and Cu3Au indicates that the general features are well described.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1976
Volume
29
Issue
9
Start / End Page
549 / 551
Related Subject Headings
- Applied Physics
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Haff, P. K., & Switkowski, Z. E. (1976). On the sputtering of binary compounds. Applied Physics Letters, 29(9), 549–551. https://doi.org/10.1063/1.89180
Haff, P. K., and Z. E. Switkowski. “On the sputtering of binary compounds.” Applied Physics Letters 29, no. 9 (December 1, 1976): 549–51. https://doi.org/10.1063/1.89180.
Haff PK, Switkowski ZE. On the sputtering of binary compounds. Applied Physics Letters. 1976 Dec 1;29(9):549–51.
Haff, P. K., and Z. E. Switkowski. “On the sputtering of binary compounds.” Applied Physics Letters, vol. 29, no. 9, Dec. 1976, pp. 549–51. Scopus, doi:10.1063/1.89180.
Haff PK, Switkowski ZE. On the sputtering of binary compounds. Applied Physics Letters. 1976 Dec 1;29(9):549–551.
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1976
Volume
29
Issue
9
Start / End Page
549 / 551
Related Subject Headings
- Applied Physics
- 10 Technology
- 09 Engineering
- 02 Physical Sciences