Channel and contact length scaling in carbon nanotube transistors

Conference Paper

In order to consider single-walled carbon nanotubes (SWCNTs) for a future technology their physical scaling limits must be understood. Such scaling involves shrinking two critical lengths: 1) the channel length (L g ) and 2) the less-emphasized source/drain contact lengths (CL). Until recently, many believed that L g could not be scaled in SWCNT field-effect transistors (CNTFETs) without incurring severe short channel effects (SCEs). However, using an improved device geometry, it has now been shown that proper L g scaling can be achieved with actual enhancement in performance [1]. In this presentation, a more complete picture of L g scaling is given, along with the first reported results of contact length scaling. © 2010 IEEE.

Full Text

Duke Authors

Cited Authors

  • Franklin, AD; Bol, AA; Chen, Z

Published Date

  • October 11, 2010

Published In

Start / End Page

  • 275 - 276

International Standard Serial Number (ISSN)

  • 1548-3770

International Standard Book Number 13 (ISBN-13)

  • 9781424478705

Digital Object Identifier (DOI)

  • 10.1109/DRC.2010.5551963

Citation Source

  • Scopus