Channel and contact length scaling in carbon nanotube transistors
In order to consider single-walled carbon nanotubes (SWCNTs) for a future technology their physical scaling limits must be understood. Such scaling involves shrinking two critical lengths: 1) the channel length (L g ) and 2) the less-emphasized source/drain contact lengths (CL). Until recently, many believed that L g could not be scaled in SWCNT field-effect transistors (CNTFETs) without incurring severe short channel effects (SCEs). However, using an improved device geometry, it has now been shown that proper L g scaling can be achieved with actual enhancement in performance . In this presentation, a more complete picture of L g scaling is given, along with the first reported results of contact length scaling. © 2010 IEEE.
Franklin, AD; Bol, AA; Chen, Z
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International Standard Book Number 13 (ISBN-13)
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