Channel and contact length scaling in carbon nanotube transistors

Published

Conference Paper

In order to consider single-walled carbon nanotubes (SWCNTs) for a future technology their physical scaling limits must be understood. Such scaling involves shrinking two critical lengths: 1) the channel length (Lg) and 2) the less-emphasized source/drain contact lengths (CL). Until recently, many believed that Lg could not be scaled in SWCNT field-effect transistors (CNTFETs) without incurring severe short channel effects (SCEs). However, using an improved device geometry, it has now been shown that proper Lg scaling can be achieved with actual enhancement in performance [1]. In this presentation, a more complete picture of Lg scaling is given, along with the first reported results of contact length scaling. © 2010 IEEE.

Full Text

Duke Authors

Cited Authors

  • Franklin, AD; Bol, AA; Chen, Z

Published Date

  • October 11, 2010

Published In

Start / End Page

  • 275 - 276

International Standard Serial Number (ISSN)

  • 1548-3770

International Standard Book Number 13 (ISBN-13)

  • 9781424478705

Digital Object Identifier (DOI)

  • 10.1109/DRC.2010.5551963

Citation Source

  • Scopus