Channel and contact length scaling in carbon nanotube transistors
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Franklin, AD; Bol, AA; Chen, Z
Published in: Device Research Conference - Conference Digest, DRC
October 11, 2010
In order to consider single-walled carbon nanotubes (SWCNTs) for a future technology their physical scaling limits must be understood. Such scaling involves shrinking two critical lengths: 1) the channel length (Lg) and 2) the less-emphasized source/drain contact lengths (CL). Until recently, many believed that Lg could not be scaled in SWCNT field-effect transistors (CNTFETs) without incurring severe short channel effects (SCEs). However, using an improved device geometry, it has now been shown that proper Lg scaling can be achieved with actual enhancement in performance [1]. In this presentation, a more complete picture of Lg scaling is given, along with the first reported results of contact length scaling. © 2010 IEEE.
Duke Scholars
Published In
Device Research Conference - Conference Digest, DRC
DOI
ISSN
1548-3770
Publication Date
October 11, 2010
Start / End Page
275 / 276
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Franklin, A. D., Bol, A. A., & Chen, Z. (2010). Channel and contact length scaling in carbon nanotube transistors. In Device Research Conference - Conference Digest, DRC (pp. 275–276). https://doi.org/10.1109/DRC.2010.5551963
Franklin, A. D., A. A. Bol, and Z. Chen. “Channel and contact length scaling in carbon nanotube transistors.” In Device Research Conference - Conference Digest, DRC, 275–76, 2010. https://doi.org/10.1109/DRC.2010.5551963.
Franklin AD, Bol AA, Chen Z. Channel and contact length scaling in carbon nanotube transistors. In: Device Research Conference - Conference Digest, DRC. 2010. p. 275–6.
Franklin, A. D., et al. “Channel and contact length scaling in carbon nanotube transistors.” Device Research Conference - Conference Digest, DRC, 2010, pp. 275–76. Scopus, doi:10.1109/DRC.2010.5551963.
Franklin AD, Bol AA, Chen Z. Channel and contact length scaling in carbon nanotube transistors. Device Research Conference - Conference Digest, DRC. 2010. p. 275–276.
Published In
Device Research Conference - Conference Digest, DRC
DOI
ISSN
1548-3770
Publication Date
October 11, 2010
Start / End Page
275 / 276