Strain status in Fe- and Si- doped GaN epilayers grown on sapphire
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, Conference
Zheng, CC; Ning, JQ; Wang, JF; Xu, K; Zhao, DG; Xu, SJ
Published in: Optoelectronic Devices and Integration, OEDI 2015
January 1, 2015
The effect of Fe doping on a series of Fe-doped GaN epilayers with difference doping concentrations were studied by Raman spectroscopy with comparison to Si-doped GaN samples. Compressive strain in Fe-dope GaN tend to relax.
Duke Scholars
Published In
Optoelectronic Devices and Integration, OEDI 2015
DOI
ISBN
9781943580019
Publication Date
January 1, 2015
Citation
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Zheng, C. C., Ning, J. Q., Wang, J. F., Xu, K., Zhao, D. G., & Xu, S. J. (2015). Strain status in Fe- and Si- doped GaN epilayers grown on sapphire. In Optoelectronic Devices and Integration, OEDI 2015. https://doi.org/10.1364/OEDI.2015.JW3A.47
Zheng, C. C., J. Q. Ning, J. F. Wang, K. Xu, D. G. Zhao, and S. J. Xu. “Strain status in Fe- and Si- doped GaN epilayers grown on sapphire.” In Optoelectronic Devices and Integration, OEDI 2015, 2015. https://doi.org/10.1364/OEDI.2015.JW3A.47.
Zheng CC, Ning JQ, Wang JF, Xu K, Zhao DG, Xu SJ. Strain status in Fe- and Si- doped GaN epilayers grown on sapphire. In: Optoelectronic Devices and Integration, OEDI 2015. 2015.
Zheng, C. C., et al. “Strain status in Fe- and Si- doped GaN epilayers grown on sapphire.” Optoelectronic Devices and Integration, OEDI 2015, 2015. Scopus, doi:10.1364/OEDI.2015.JW3A.47.
Zheng CC, Ning JQ, Wang JF, Xu K, Zhao DG, Xu SJ. Strain status in Fe- and Si- doped GaN epilayers grown on sapphire. Optoelectronic Devices and Integration, OEDI 2015. 2015.
Published In
Optoelectronic Devices and Integration, OEDI 2015
DOI
ISBN
9781943580019
Publication Date
January 1, 2015