Strain status in Fe- and Si- doped GaN epilayers grown on sapphire

Conference Paper

The effect of Fe doping on a series of Fe-doped GaN epilayers with difference doping concentrations were studied by Raman spectroscopy with comparison to Si-doped GaN samples. Compressive strain in Fe-dope GaN tend to relax.

Full Text

Duke Authors

Cited Authors

  • Zheng, CC; Ning, JQ; Wang, JF; Xu, K; Zhao, DG; Xu, SJ

Published Date

  • January 1, 2015

Published In

  • Optoelectronic Devices and Integration, Oedi 2015

International Standard Book Number 13 (ISBN-13)

  • 9781943580019

Digital Object Identifier (DOI)

  • 10.1364/OEDI.2015.JW3A.47

Citation Source

  • Scopus