Strain status in Fe- and Si- doped GaN epilayers grown on sapphire
The effect of Fe doping on a series of Fe-doped GaN epilayers with difference doping concentrations were studied by Raman spectroscopy with comparison to Si-doped GaN samples. Compressive strain in Fe-dope GaN tend to relax.
- Zheng, CC; Ning, JQ; Wang, JF; Xu, K; Zhao, DG; Xu, SJ
- January 1, 2015
- Optoelectronic Devices and Integration, Oedi 2015
International Standard Book Number 13 (ISBN-13)
Digital Object Identifier (DOI)