Overview
Changcheng Zheng obtained a B.Sc. in physics from University of Science and Technology of China in 2007 and completed his Ph.D. in 2011 (degree awarded in 2012) at the Department of Physics, University of Hong Kong (HKU). After being a research assistant/associate at HKU for more than a year, he worked as a lecturer at Xi’an Jiaotong-Liverpool University from 2013 to 2019. His research is about experimental condensed matter physics: optical properties of semiconductors and nanostructures, exciton dynamics in bulk and low dimensional systems under different excitation conditions, and nonlinear optical properties of novel luminescent/fluorescent materials. He has taught university physics for more than 10 years, completed several external and interanl research projects, and published more than 70 journal papers with co-authors.
Current Appointments & Affiliations
Associate Professor of Physics at Duke Kunshan University
·
2019 - Present
DKU Faculty
Assoc. Chair of the Division of Natural and Applied Science at Duke Kunshan University
·
2025 - Present
DKU Faculty
Associate Professor of the Practice of Interdisciplinary Studies at DKU Unit at Duke University
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2026 - Present
Interdisciplinary Studies at DKU Unit,
DKU Faculty
Recent Publications
Boosting SHG in InP Nanomembranes: The Role of the Wurtzite-Zincblende Polytypic Interface
Journal Article Advanced Functional Materials · March 5, 2026 III–V semiconductors, particularly InP, have demonstrated significant potential for seamless integration into nanophotonic systems. However, conventional zincblende InP crystals exhibit inherently weak second-harmonic generation (SHG) due to limited second ... Full text CiteFabrication of high-quality Mo-doped BiVO 4 thin films with linearly controlled oxygen vacancy content
Journal Article Journal of Physics D: Applied Physics · February 27, 2026 Abstract BiVO 4 (BVO), a photocatalytic material with broad application prospects, faces practical limitations due to high ... Full text CiteRevealing Decoherence Dependence of the Bright A Excitons on the Energy Positions of the Intervalley Dark Excitons in WS<sub>2</sub> Semiconductors.
Journal Article ACS nano · January 2026 Distinctive valley structures of the energy band in two-dimensional (2D) transition metal dichalcogenides (TMDs) offer various potential momentum-forbidden dark excitons, which significantly alter the decoherence of bright direct KK excitons, mainly ... Full text CiteEducation
University of Hong Kong (China) ·
2012
Ph.D.