Interband transitions of InAs/AlAs Short-Period superlattices grown by molecular beam epitaxy

Journal Article (Journal Article)

In this work, we use spectroscopic ellipsometry (SE) to study the optical properties of InAsn/AlAsn short-period superlattices (SPS) with different period thicknesses for a wide wavelength range of 250 nm − 1650 nm (about 0.75 eV – 5 eV). Additionally, the InAs2/AlAs2 samples grown at various temperatures (450, 475, 500, 525, 550 ℃) were investigated. We extract the dielectric functions and adapt Adachi's model to obtain the interband transition energies of E0, E0+Δ0, E1, E1+Δ1 and E2. The quantum confinement effect and the strain effect lead to the decrease of E0, E0+Δ0, E1, E1+Δ1 with the increase of period thickness. It is also found that as the growth temperature rises from 450 ℃, all the transition energies decrease as a result of the increase in the amplitude of lateral composition modulation and the relaxation of the compressive strain in InAs layers.

Full Text

Duke Authors

Cited Authors

  • Yao, L; Wang, W; Yao, J; Lu, K; Lu, H; Zheng, C; Chen, B

Published Date

  • March 1, 2023

Published In

Volume / Issue

  • 605 /

International Standard Serial Number (ISSN)

  • 0022-0248

Digital Object Identifier (DOI)

  • 10.1016/j.jcrysgro.2022.127071

Citation Source

  • Scopus