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Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si

Publication ,  Journal Article
Tan, TY; Gardner, EE; Tice, WK
Published in: Applied Physics Letters
December 1, 1977
Published version (DOI)

Conditions for effective intrinsic gettering by oxide precipitate induced dislocations, which we suggest as an important mechanism in explaining device leakage limited yield enhancement due to oxygen in Czochralski-grown Si wafers, are examined. The effectiveness of this mechanism is demonstrated.

Duke Scholars

Teh Yu Tan
Author Teh Yu Tan Thomas Lord Department of Mechanical Engineering and Materia ...
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Published In

Applied Physics Letters

DOI

10.1063/1.89340

ISSN

0003-6951

Publication Date

December 1, 1977

Volume

30

Issue

4

Start / End Page

175 / 176

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences
 

Citation

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Tan, T. Y., Gardner, E. E., & Tice, W. K. (1977). Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si. Applied Physics Letters, 30(4), 175–176. https://doi.org/10.1063/1.89340
Tan, T. Y., E. E. Gardner, and W. K. Tice. “Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si.” Applied Physics Letters 30, no. 4 (December 1, 1977): 175–76. https://doi.org/10.1063/1.89340.
Tan TY, Gardner EE, Tice WK. Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si. Applied Physics Letters. 1977 Dec 1;30(4):175–6.
Tan, T. Y., et al. “Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si.” Applied Physics Letters, vol. 30, no. 4, Dec. 1977, pp. 175–76. Scopus, doi:10.1063/1.89340.
Tan TY, Gardner EE, Tice WK. Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si. Applied Physics Letters. 1977 Dec 1;30(4):175–176.

Published In

Applied Physics Letters

DOI

10.1063/1.89340

ISSN

0003-6951

Publication Date

December 1, 1977

Volume

30

Issue

4

Start / End Page

175 / 176

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences