Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si

Conditions for effective intrinsic gettering by oxide precipitate induced dislocations, which we suggest as an important mechanism in explaining device leakage limited yield enhancement due to oxygen in Czochralski-grown Si wafers, are examined. The effectiveness of this mechanism is demonstrated.

Full Text

Duke Authors

Cited Authors

  • Tan, TY; Gardner, EE; Tice, WK

Published Date

  • 1977

Published In

Volume / Issue

  • 30 / 4

Start / End Page

  • 175 - 176

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.89340

Citation Source

  • SciVal