Teh Yu Tan | Scholars@Duke

Teh Yu Tan
Professor Emeritus in the Department of Mechanical Engineering and Materials Science

Professor Tan is conducting fundamental research in materials science and processes related to electronic materials. He and his colleagues have originated the study of the subject of intrinsic gettering which is now widely used to improve yield in integrated circuit fabrications using Czochralski silicon. Primarily because of this work, the semiconductor industry granted him the SEMMY Award in the materials category in 1987. SEMMY is one of the highest awards the industry gives.

He has also studied the basic aspects of the following topics in silicon: precipitation, kinetic process of defect evolution, impurity diffusion mechanisms and point defects. These studies have led to greater understanding of the structure and properties of defects in silicon. Since 1986, his research interests have also included III-V compound semiconducting materials. He is a recipient of the 1994 Alexander Von Humboldt Prize.

Current Appointments & Affiliations

Professor Emeritus in the Department of Mechanical Engineering and Materials Science, Thomas Lord Department of Mechanical Engineering and Materials Science, Pratt School of Engineering 2016
Faculty Network Member of The Energy Initiative, Nicholas Institute-Energy Initiative, Initiatives 2012

Contact Information

186 Engineering Bldg, Durham, NC 27708
Box 90300, Durham, NC 27708-0300
ttan@duke.edu (919) 660-5323

Background
Education, Training, & Certifications
- Ph.D., University of California - Berkeley 1971
- M.S., Tulane University 1965
- B.S., National Taiwan University (Taiwan) 1962
Duke Appointment History
- Professor of Mechanical Engineering and Materials Science, Thomas Lord Department of Mechanical Engineering and Materials Science, Pratt School of Engineering 1986 - 2016
Research
Selected Grants
- High Sensitivity Low Cost Solid State Neutron Detection awarded by US Department of Homeland Security 2014 - 2019
- Investigation of Superlattice Disordering and Diffusion Mechanics in GaAs awarded by Army Research Office 1989 - 1993
- Investigation of Superlattice Disordering and Diffusion Mechanisms in GaAs awarded by Army Research Office 1989 - 1991
- Superlative Disordering Studies 69GA and 70GA Isotopes awarded by National Science Foundation 1987 - 1990
Publications & Artistic Works
Selected Publications
- Academic Articles
  - Sopori, B., P. Basnyat, S. Devayajanam, T. Tan, A. Upadhyaya, K. Tate, A. Rohatgi, and H. Xu. “Dissolution of Oxygen Precipitate Nuclei in n-Type CZ-Si Wafers to Improve Their Material Quality: Experimental Results.” Ieee Journal of Photovoltaics 7, no. 1 (January 1, 2017): 97–103. https://doi.org/10.1109/JPHOTOV.2016.2621345.
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  - Li, N., W. Li, L. Liu, and T. Y. Tan. “A nucleation-growth model of nanowires produced by the vapor-liquid-solid process.” Journal of Applied Physics 114, no. 6 (August 14, 2013). https://doi.org/10.1063/1.4817794.
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  - Sopori, B., T. Tan, and P. Rupnowski. “Photovoltaic materials and devices.” International Journal of Photoenergy 2012 (July 16, 2012). https://doi.org/10.1155/2012/673975.
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  - Curtaroloa, S., N. Awasthia, W. Setyawana, N. Lia, A. Jianga, T. Y. Tan, E. Morab, K. Boltonc, and A. R. Harutyunyanb. “Thermodynamics of carbon in iron nanoparticles at low temperature: Reduced solubility and size-induced nucleation of cementite.” Physics Procedia 6 (January 1, 2010): 16–26. https://doi.org/10.1016/j.phpro.2010.09.023.
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  - Li, N., T. Y. Tan, and U. Gösele. “Transition region width of nanowire hetero- and pn-junctions grown using vapor-liquid-solid processes.” Applied Physics A: Materials Science and Processing 90, no. 4 (March 1, 2008): 591–96. https://doi.org/10.1007/s00339-007-4376-z.
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  - Zhao, L., N. Li, A. Langner, M. Steinhart, T. Y. Tan, E. Pippel, H. Hofmeister, K. N. Tu, and U. Gösele. “Crystallization of amorphous SiO2 microtubes catalyzed by lithium.” Advanced Functional Materials 17, no. 12 (August 13, 2007): 1952–57. https://doi.org/10.1002/adfm.200601104.
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  - Li, N., T. Y. Tan, and U. Gösele. “Chemical tension and global equilibrium in VLS nanostructure growth process: From nanohillocks to nanowires.” Applied Physics A: Materials Science and Processing 86, no. 4 (March 1, 2007): 433–40. https://doi.org/10.1007/s00339-006-3809-4.
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  - Li, H., N. Li, S. M. Joshi, and T. Y. Tan. “Predominance of alternate diffusion mechanisms for the interstitial- substitutional impurity gold in silicon.” Materials Research Society Symposium Proceedings 994 (January 1, 2007): 45–50. https://doi.org/10.1557/proc-0994-f02-05.
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  - Li, N., T. Y. Tan, and U. Gösele. “Chemical tension in VLS nanostructure growth process: From nanohillocks to nanowires.” Materials Research Society Symposium Proceedings 1017 (January 1, 2007): 20–25. https://doi.org/10.1557/proc-1017-dd04-09.
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  - Tan, T. Y., and U. Gösele. “Diffusion in semiconductors,” December 1, 2005, 165–208. https://doi.org/10.1007/3-540-30970-5_4.
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  - Schubert, L., P. Werner, N. D. Zakharov, G. Gerth, F. M. Kolb, L. Long, U. Gösele, and T. Y. Tan. “Silicon nanowhiskers grown on 〈111〉Si substrates by molecular-beam epitaxy.” Applied Physics Letters 84, no. 24 (June 14, 2004): 4968–70. https://doi.org/10.1063/1.1762701.
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  - Tan, T. Y., N. Li, and U. Gösele. “On the thermodynamic size limit of nanowires grown by the vapor-liquid-solid process.” Applied Physics A: Materials Science and Processing 78, no. 4 (March 1, 2004): 519–26. https://doi.org/10.1007/s00339-003-2380-5.
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  - Negoita, M. D., and T. Y. Tan. “Metallic precipitate contribution to carrier generation in metal-oxide-semiconductor capacitors due to the Schottky effect.” Journal of Applied Physics 95, no. 1 (January 1, 2004): 191–98. https://doi.org/10.1063/1.1630701.
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  - Negoita, M. D., and T. Y. Tan. “Metallic precipitate contribution to generation and recombination currents in p-n junction devices due to the Schottky effect.” Journal of Applied Physics 94, no. 8 (October 15, 2003): 5064–70. https://doi.org/10.1063/1.1611289.
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  - Tan, T. Y., N. Li, and U. Gösele. “Is there a thermodynamic size limit of nanowires grown by the vapor-liquid-solid process?” Applied Physics Letters 83, no. 6 (August 11, 2003): 1199–1201. https://doi.org/10.1063/1.1599984.
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  - Plekhanov, P. S., M. D. Negoita, and T. Y. Tan. “Erratum: Effect of Al-induced gettering and back surface field on the efficiency of Si solar cells (Journal of Applied Physics (2001) 90 (5388)).” Journal of Applied Physics 91, no. 8 (April 15, 2002): 5508. https://doi.org/10.1063/1.1464647.
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  - Tan, T. Y. “Recent progresses in understanding gettering in silicon.” Materials Research Society Symposium Proceedings 719 (January 1, 2002): 89–100. https://doi.org/10.1557/proc-719-f4.1.
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  - Tan, T. Y., S. T. Lee, and U. Gösele. “A model for growth directional features in silicon nanowires.” Applied Physics A: Materials Science and Processing 74, no. 3 (January 1, 2002): 423–32. https://doi.org/10.1007/s003390101133.
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  - Tan, T. Y., S. T. Lee, and U. Gösele. “Modeling growth directional features of silicon nanowires obtained using SiO.” Materials Research Society Symposium Proceedings 719 (January 1, 2002): 235–40. https://doi.org/10.1557/proc-719-f8.38.
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  - Joshi, S. M., U. M. Gösele, and T. Y. Tan. “Extended high temperature Al gettering for improvement and homogenization of minority carrier diffusion lengths in multicrystalline Si.” Solar Energy Materials and Solar Cells 70, no. 2 (December 15, 2001): 231–38. https://doi.org/10.1016/S0927-0248(01)00029-0.
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  - Plekhanov, P. S., M. D. Negoita, and T. Y. Tan. “Effect of Al-induced gettering and back surface field on the efficiency of Si solar cells.” Journal of Applied Physics 90, no. 10 (November 15, 2001): 5388–94. https://doi.org/10.1063/1.1412575.
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  - Tan, T. -. Y., T. -. H. Cheng, S. K. Bose, and T. -. Y. Chai. “Adaptive resource negotiation based control for real time applications.” Computer Communications 24, no. 13 (August 2001): 1283–98. https://doi.org/10.1016/s0140-3664(00)00362-5.
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  - Tan, T. Y., and P. S. Plekhanov. “A quantitative model of the electrical activity of metal silicide precipitates in silicon based on the Schottky effect.” Materials Research Society Symposium Proceedings 669 (January 1, 2001). https://doi.org/10.1557/proc-669-j6.11.
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  - Plekhanov, P. S., and T. Y. Tan. “Schottky effect model of electrical activity of metallic precipitates in silicon.” Applied Physics Letters 76, no. 25 (June 19, 2000): 3777–79. https://doi.org/10.1063/1.126778.
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  - Chen, C. H. O., U. M. Gösele, and T. Y. Tan. “Fermi-level effect and junction carrier concentration effect on p-type dopant distribution in III-V compound superlattices.” Materials Research Society Symposium Proceedings 535 (December 1, 1999): 219–24.
  - Chen, C. H. O., U. M. Gösele, and T. Y. Tan. “Fermi-level effect and junction carrier concentration effect on boron distribution in Ge^Si^/Si heterostructures.” Materials Research Society Symposium Proceedings 535 (December 1, 1999): 275–80.
  - Chen, C. H., U. M. Gösele, and T. Y. Tan. “Thermal equilibrium concentrations of the amphoteric dopant Si and the associated carrier concentrations in GaAs.” Journal of Applied Physics 86, no. 10 (November 15, 1999): 5376–84. https://doi.org/10.1063/1.371534.
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  - Chen, C. H., U. M. Gösele, and T. Y. Tan. “Dopant diffusion and segregation in semiconductor heterostructures: Part III, Diffusion of Si into GaAs.” Applied Physics A: Materials Science and Processing 69, no. 3 (September 1, 1999): 313–21. https://doi.org/10.1007/s003390051007.
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  - Scholz, R. F., P. Werner, U. Gösele, and T. Y. Tan. “The contribution of vacancies to carbon out-diffusion in silicon.” Applied Physics Letters 74, no. 3 (January 18, 1999): 392–94. https://doi.org/10.1063/1.123081.
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  - Chen, C. H., U. M. Gösele, and T. Y. Tan. “Dopant diffusion and segregation in semiconductor heterostructures: Part 2. B in GexSi1-x/Si structures.” Applied Physics A: Materials Science and Processing 68, no. 1 (January 1, 1999): 19–24. https://doi.org/10.1007/s003390050848.
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  - Chen, C. H., U. M. Gösele, and T. Y. Tan. “Dopant diffusion and segregation in semiconductor heterostructures: Part 1. Zn and Be in III-V compound superlattices.” Applied Physics A: Materials Science and Processing 68, no. 1 (January 1, 1999): 9–18. https://doi.org/10.1007/s003390050847.
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  - Plekhanov, P. S., R. Gafiteanu, U. M. Gösele, and T. Y. Tan. “Modeling of gettering of precipitated impurities from Si for carrier lifetime improvement in solar cell applications.” Journal of Applied Physics 86, no. 5 (January 1, 1999): 2453–58. https://doi.org/10.1063/1.371075.
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  - Chen, C. H., U. Gosele, and T. Y. Tan. “Fermi-level effect on group III atom interdiffusion in III-V compounds: bandgap heterogeneity and low silicon-doping.” Materials Research Society Symposium Proceedings 490 (December 1, 1998): 105–10.
  - Chen, C. H., U. Gosele, and T. Y. Tan. “Simulation of under- and supersaturation of gallium vacancies in gallium arsenide during silicon in- and outdiffusion.” Materials Research Society Symposium Proceedings 490 (December 1, 1998): 99–104.
  - Joshi, S. M., U. M. Gosele, and T. Y. Tan. “Gold diffusion in silicon during gettering by an aluminum layer.” Materials Research Society Symposium Proceedings 490 (December 1, 1998): 117–22.
  - Plekhanov, P. S., U. M. Gosele, and T. Y. Tan. “Nucleation and growth of voids in silicon.” Materials Research Society Symposium Proceedings 490 (December 1, 1998): 77–82.
  - Scholz, R., U. Gösele, J. Y. Huh, and T. Y. Tan. “Carbon-induced undersaturation of silicon self-interstitials.” Applied Physics Letters 72, no. 2 (December 1, 1998): 200–202. https://doi.org/10.1063/1.120684.
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  - Tan, T. Y. “Mass transport equations unifying descriptions of isothermal diffusion, thermomigration, segregation, and position-dependent diffusivity.” Applied Physics Letters 73, no. 18 (December 1, 1998): 2678–80. https://doi.org/10.1063/1.122551.
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  - Tong, Q. Y., R. Scholz, U. Gösele, T. H. Lee, L. J. Huang, Y. L. Chao, and T. Y. Tan. “A "smarter-cut" approach to low temperature silicon layer transfer.” Applied Physics Letters 72, no. 1 (December 1, 1998): 49–51. https://doi.org/10.1063/1.120601.
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  - Plekhanov, P. S., U. M. Gösele, and T. Y. Tan. “Modeling of nucleation and growth of voids in silicon.” Journal of Applied Physics 84, no. 2 (July 15, 1998): 718–26. https://doi.org/10.1063/1.368128.
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  - Schultz, M., U. Egger, R. Scholz, O. Breitenstein, U. Gösele, and T. Y. Tan. “Experimental and computer simulation studies of diffusion mechanisms on the arsenic sublattice of gallium arsenide.” Journal of Applied Physics 83, no. 10 (May 15, 1998): 5295–5301. https://doi.org/10.1063/1.367354.
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  - Kästner, G., U. Gösele, and T. Y. Tan. “A model of strain relaxation in hetero-epitaxial films on compliant substrates.” Applied Physics A: Materials Science and Processing 66, no. 1 (January 1, 1998): 13–22. https://doi.org/10.1007/s003390050631.
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  - Scholz, R. F., U. Gösele, O. Breitenstein, U. Egger, and T. Y. Tan. “Cathodoluminescence investigation of diffusion studies on the arsenic sublattice in galium arsenide.” Solid State Phenomena 63–64 (January 1, 1998): 183–90.
  - Sopori, B. L., W. Chen, J. Alleman, R. Matson, N. M. Ravindra, and T. Y. Tan. “Grain enhancement of polycrystalline silicon films aided by optical excitation.” Materials Research Society Symposium Proceedings 485 (January 1, 1998): 95–100.
  - Goesele, U., D. Conrad, P. Werner, Q. Y. Tong, R. Gafiteanu, and T. Y. Tan. “Point defects, diffusion and gettering in silicon.” Materials Research Society Symposium Proceedings 469 (December 1, 1997): 13–24.
  - Egger, U., M. Schultz, P. Werner, O. Breitenstein, T. Y. Tan, U. Gösele, R. Franzheld, M. Uematsu, and H. Ito. “Interdiffusion studies in GaAsP/GaAs and GaAsSb/GaAs superlattices under various arsenic vapor pressures.” Journal of Applied Physics 81, no. 9 (May 1, 1997): 6056–61. https://doi.org/10.1063/1.364453.
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  - Tan, T. Y., P. Plekhanov, and U. M. Gösele. “Nucleation barrier of voids and dislocation loops in silicon.” Applied Physics Letters 70, no. 13 (March 31, 1997): 1715–17. https://doi.org/10.1063/1.118652.
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  - Schroer, E., S. Hopfe, P. Werner, U. Gösele, G. Duscher, M. Rühle, and T. Y. Tan. “Oxide precipitation at silicon grain boundaries.” Applied Physics Letters 70, no. 3 (January 20, 1997): 327–29. https://doi.org/10.1063/1.118405.
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  - Gösele, U., T. Y. Tan, M. Schultz, U. Egger, P. Werner, R. Scholz, and O. Breitenstein. “Diffusion in GaAs and related compounds: Recent developments.” Defect and Diffusion Forum 143–147 (January 1, 1997): 1079–94. https://doi.org/10.4028/www.scientific.net/DDF.143-147.1079.
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  - Sopori, B. L., J. Alleman, W. Chen, T. Y. Tan, and N. M. Ravindra. “Grain enhancement of thin silicon layers using optical processing.” Materials Research Society Symposium Proceedings 470 (January 1, 1997): 419–24. https://doi.org/10.1557/proc-470-419.
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  - Tan, T. Y., and U. Gösele. “Twist wafer bonded "fixed-film" versus "compliant" substrates: Correlated misfit dislocation generation and contaminant gettering.” Applied Physics A: Materials Science and Processing 64, no. 6 (January 1, 1997): 631–33. https://doi.org/10.1007/s003390050530.
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  - Tan, T. Y., and U. Gösele. “Twist wafer bonded "fixed-film" versus "compliant" substrates: Correlated misfit dislocation generation and contaminant gettering.” Applied Physics A: Materials Science and Processing 64, no. 6 (1997): 631–33.
  - Sopori, B. L., L. Jastrzebski, and T. Tan. “Comparison of gettering in single- and multicrystalline silicon for solar cells.” Conference Record of the Ieee Photovoltaic Specialists Conference, December 1, 1996, 625–28.
  - Tong, Q. Y., T. H. Lee, W. J. Kim, T. Y. Tan, U. Goesele, H. M. You, W. Yun, and J. K. O. Sin. “Feasibility study of VLSI device layer transfer by CMP PETEOS direct bonding.” Ieee International Soi Conference, December 1, 1996, 36–37.
  - Tan, T. Y., and U. M. Gösele. “Effects of p-type dopants on enhancing AlAs/GaAs superlattice disordering.” Materials Chemistry and Physics 44, no. 1 (January 1, 1996): 45–50. https://doi.org/10.1016/0254-0584(95)01654-D.
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  - Huh, J. Y., T. Y. Tan, and U. Gösele. “Model of partitioning of point defect species during precipitation of a misfitting compound in Czochralski silicon.” Journal of Applied Physics 77, no. 11 (December 1, 1995): 5563–71. https://doi.org/10.1063/1.359197.
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  - Huh, J. Y., U. Gösele, and T. Y. Tan. “Coprecipitation of oxygen and carbon in Czochralski silicon: A growth kinetic approach.” Journal of Applied Physics 78, no. 10 (December 1, 1995): 5926–35. https://doi.org/10.1063/1.360594.
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  - Joshi, S. M., U. M. Gösele, and T. Y. Tan. “Improvement of minority carrier diffusion length in Si by Al gettering.” Journal of Applied Physics 77, no. 8 (December 1, 1995): 3858–63. https://doi.org/10.1063/1.358563.
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  - Tong, Q. Y., G. Kidao, T. Y. Tan, and U. Gosele. “Wafer bonding of Si with dissimilar materials.” International Conference on Solid State and Integrated Circuit Technology Proceedings, December 1, 1995, 524–26.
  - Uematsu, M., P. Werner, M. Schultz, T. Y. Tan, and U. M. Gösele. “Sulfur diffusion and the interstitial contribution to arsenic self-diffusion in GaAs.” Applied Physics Letters 67 (December 1, 1995): 2863. https://doi.org/10.1063/1.114810.
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  - Chen, C. H., and T. Y. Tan. “On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects.” Applied Physics a Materials Science &Amp; Processing 61, no. 4 (October 1, 1995): 397–405. https://doi.org/10.1007/BF01540114.
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  - Chen, C. -. H., and T. Y. Tan. “On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects.” Applied Physics A: Materials Science & Processing 61, no. 4 (September 1, 1995): 397–405. https://doi.org/10.1007/s003390050219.
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  - Gafiteanu, R., U. Gosele, and T. Y. Tan. “Phosphorus and aluminum gettering of gold in silicon: simulation and optimization considerations.” Materials Research Society Symposium Proceedings 378 (January 1, 1995): 297–302. https://doi.org/10.1557/proc-378-297.
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  - Joshi, S. M., U. M. Goesele, and T. Y. Tan. “Minority carrier diffusion length improvement in Czochralski silicon by aluminum gettering.” Materials Research Society Symposium Proceedings 378 (January 1, 1995): 279–84. https://doi.org/10.1557/proc-378-279.
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  - Tan, T. Y. “Point defects and diffusion mechanisms pertinent to the Ga sublattice of GaAs.” Materials Chemistry &Amp; Physics 40, no. 4 (January 1, 1995): 245–52. https://doi.org/10.1016/0254-0584(95)01488-8.
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  - Tong, Q. Y., G. Kaido, T. Y. Tan, and U. Gösele. “A Simple Chemical Treatment for Preventing Thermal Bubbles in Silicon Wafer Bonding.” Journal of the Electrochemical Society 142, no. 10 (January 1, 1995): 201–3. https://doi.org/10.1149/1.2050045.
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  - Hsia, S. L., G. E. McGuire, T. Y. Tan, P. L. Smith, and W. T. Lynch. “High resistivity Co and Ti silicide formation on silicon-on-insulator substrates.” Thin Solid Films 253, no. 1–2 (December 15, 1994): 462–66. https://doi.org/10.1016/0040-6090(94)90367-0.
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  - Hsia, S. L., T. Y. Tan, P. L. Smith, and G. E. McGuire. “Assured epitaxial CoSi2 phase formation on (001) Si-on-insulator substrates using CoSi/Ti bimetallic source materials.” Digest of Technical Papers Symposium on Vlsi Technology, December 1, 1994, 123–24.
  - Gafiteanu, R., H. M. You, U. Goesele, and T. Y. Tan. “Diffusion-segregation equation for simulation in heterostructures.” Materials Research Society Symposium Proceedings 318 (January 1, 1994): 31–37.
  - Hsia, S. L., T. Y. Tan, P. L. Smith, and G. E. McGuire. “Arsenic diffusion and segregation behavior at the interface of epitaxial CoSi2 film and Si substrate.” Materials Research Society Symposium Proceedings 320 (January 1, 1994): 409–14.
  - Hsia, S. L., T. Y. Tan, P. L. Smith, and G. E. McGuire. “CoSi and CoSi2 phase formation on bulk and SOI Si substrates.” Materials Research Society Symposium Proceedings 320 (January 1, 1994): 373–78.
  - Tan, T. Y. “Thermal equilibrium concentrations of point defects in gallium arsenide.” Journal of Physics and Chemistry of Solids 55, no. 10 (January 1, 1994): 917–29. https://doi.org/10.1016/0022-3697(94)90111-2.
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  - Tan, T. Y., and W. J. Taylor. “Chapter 9 Mechanisms of Oxygen Precipitation: Some Quantitative Aspects.” Semiconductors and Semimetals 42, no. C (January 1, 1994): 353–90. https://doi.org/10.1016/S0080-8784(08)60252-5.
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  - Taylor, W. J., U. M. Gösele, and T. Y. Tan. “Precipitate strain relief via point defect interaction: models for SiO2 in silicon.” Materials Chemistry and Physics 36, no. 3–4 (January 1, 1994): 389. https://doi.org/10.1016/0254-0584(94)90060-4.
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  - Hsia, S. L., T. Y. Tan, P. L. Smith, and G. E. McGuire. “Formation mechanism of epitaxial CoSi2 films on (001) Si using Ti-Co bimetallic layer source materials.” Materials Research Society Symposium Proceedings 280 (December 1, 1993): 603–8.
  - Jäger, W., A. Rucki, K. Urban, H. G. Hettwer, N. A. Stolwijk, H. Mehrer, and T. Y. Tan. “Formation of void/Ga-precipitate pairs during Zn diffusion into GaAs: The competition of two thermodynamic driving forces.” Journal of Applied Physics 74, no. 7 (December 1, 1993): 4409–22. https://doi.org/10.1063/1.354412.
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  - Taylor, W. J., T. Y. Tan, and U. Gösele. “Carbon precipitation in silicon: Why is it so difficult.” Applied Physics Letters 62, no. 25 (December 1, 1993): 3336–38. https://doi.org/10.1063/1.109063.
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  - You, H. M., T. Y. Tan, U. M. Gösele, S. T. Lee, G. E. Höfler, K. C. Hsieh, and N. Holonyak. “Al-Ga interdiffusion, carbon acceptor diffusion, and hole reduction in carbon-doped Al0.4Ga0.6As/GaAs superlattices: The As 4 pressure effect.” Journal of Applied Physics 74, no. 4 (December 1, 1993): 2450–60. https://doi.org/10.1063/1.354682.
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  - You, H. M., U. M. Gösele, and T. Y. Tan. “Simulation of the transient indiffusion-segregation process of triply negatively charged Ga vacancies in GaAs and AlAs/GaAs superlattices.” Journal of Applied Physics 74, no. 4 (December 1, 1993): 2461–70. https://doi.org/10.1063/1.354683.
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  - You, H. M., U. M. Gösele, and T. Y. Tan. “A study of Si outdiffusion from predoped GaAs.” Journal of Applied Physics 73, no. 11 (December 1, 1993): 7207–16. https://doi.org/10.1063/1.352394.
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  - Zimmermann, H., U. Gösele, and T. Y. Tan. “Diffusion of Fe in InP via the kick-out mechanism.” Applied Physics Letters 62, no. 1 (December 1, 1993): 75–77. https://doi.org/10.1063/1.108832.
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  - Zimmermann, H., U. Gösele, and T. Y. Tan. “Modeling of zinc-indiffusion-induced disordering of GaAs/AlAs superlattices.” Journal of Applied Physics 73, no. 1 (December 1, 1993): 150–57. https://doi.org/10.1063/1.353892.
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  - Tan, T. Y., H. M. You, and U. M. Gösele. “Thermal equilibrium concentrations and effects of negatively charged Ga vacancies in n-type GaAs.” Applied Physics a Solids and Surfaces 56, no. 3 (March 1, 1993): 249–58. https://doi.org/10.1007/BF00539483.
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  - Tan, T. Y., H. M. You, and U. M. Gosele. “Thermal equilibrium concentrations and effects of negatively charged Ga vacancies in n-type GaAs.” Appl. Phys. A, Solids Surf. (Germany) A56, no. 3 (1993): 249–58.
  - Tan, T. Y., H. M. You, and U. M. Gosele. “Thermal equilibrium concentrations and effects of Ga vacancies in n-type GaAs.” Materials Research Society Symposium Proceedings 300 (January 1, 1993): 377–90. https://doi.org/10.1557/proc-300-377.
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  - Taylor, W. J., U. M. Gosele, and T. Y. Tan. “Co-precipitation of carbon and oxygen in silicon: The dominant flux criterion.” Japanese Journal of Applied Physics 32, no. 11 R (January 1, 1993): 4857–62. https://doi.org/10.1143/JJAP.32.4857.
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  - Taylor, W. J., U. M. Gosele, and T. Y. Tan. “Co-precipitation of carbon and oxygen in silicon: The dominant flux criterion.” Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 32, no. 11 A (1993): 4857–62.
  - Taylor, W. J., U. M. Gösele, and T. Y. Tan. “Precipitate strain relief via point defect interaction: models for SiO2 in silicon.” Materials Chemistry and Physics 34, no. 2 (January 1, 1993): 166–74. https://doi.org/10.1016/0254-0584(93)90208-4.
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  - You, H. M., T. Y. Tan, U. M. Gosele, G. E. Hofler, K. C. Hsieh, and N. Holonyak. “Layer disordering and carrier concentration in heavily carbon-doped AlGaAs/GaAs superlattices.” Materials Research Society Symposium Proceedings 300 (January 1, 1993): 409–14. https://doi.org/10.1557/proc-300-409.
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  - You, H. M., U. M. Gosele, and T. Y. Tan. “Crystal surface stoichiometry and the Fermi level effects on outdiffusion of Si in GaAs.” Materials Research Society Symposium Proceedings 282 (January 1, 1993): 151–56.
  - Hsia, S. L., T. Y. Tan, P. Smith, and G. E. McGuire. “Resistance and structural stabilities of epitaxial CoSi2 films on (001) Si substrates.” Journal of Applied Physics 72, no. 5 (December 1, 1992): 1864–73. https://doi.org/10.1063/1.351659.
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  - Li, J., W. S. Yang, T. Y. Tan, S. Chevacharoenkul, and R. Chapman. “Liquid silicide formation on the Si wafer free surface during Ni diffusion at 1200°C.” Journal of Applied Physics 71, no. 1 (December 1, 1992): 196–203. https://doi.org/10.1063/1.350736.
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  - Li, J., W. S. Yang, and T. Y. Tan. “Enhancement of gold solubility in silicon wafers.” Journal of Applied Physics 71, no. 1 (December 1, 1992): 527–29. https://doi.org/10.1063/1.350693.
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  - Tan, T. Y., H. M. You, S. Yu, U. M. Gösele, W. Jäger, D. W. Boeringer, F. Zypman, R. Tsu, and S. T. Lee. “Disordering in ⁶⁹GaAs/⁷¹GaAs isotope superlattice structures.” Journal of Applied Physics 72, no. 11 (December 1, 1992): 5206–12. https://doi.org/10.1063/1.352002.
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  - Taylor, W. J., U. Gösele, and T. Y. Tan. “SiO2 precipitate strain relief in Czochralski Si: Self-interstitial emission versus prismatic dislocation loop punching.” Journal of Applied Physics 72, no. 6 (December 1, 1992): 2192–96. https://doi.org/10.1063/1.351610.
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  - Chen, S., S. T. Lee, G. Braunstein, K. Y. Ko, and T. Y. Tan. “Distribution mechanism of voids in Si-implanted GaAs.” Journal of Applied Physics 70, no. 2 (December 1, 1991): 656–60. https://doi.org/10.1063/1.349669.
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  - Hsia, S. L., T. Y. Tan, P. Smith, and G. E. McGuire. “Formation of epitaxial CoSi2 films on (001) silicon using Ti-Co alloy and bimetal source materials.” Journal of Applied Physics 70, no. 12 (December 1, 1991): 7579–87. https://doi.org/10.1063/1.349713.
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  - Tan, T. Y., S. Yu, and U. Gösele. “Determination of vacancy and self-interstitial contributions to gallium self-diffusion in GaAs.” Journal of Applied Physics 70, no. 9 (December 1, 1991): 4823–26. https://doi.org/10.1063/1.349048.
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  - Taylor, W. J., T. Y. Tan, and U. M. Gösele. “Oxygen precipitation in silicon: The role of strain and self-interstitials.” Applied Physics Letters 59, no. 16 (December 1, 1991): 2007–9. https://doi.org/10.1063/1.106136.
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  - Yu, S., T. Y. Tan, and U. Gösele. “Diffusion mechanism of zinc and beryllium in gallium arsenide.” Journal of Applied Physics 69, no. 6 (December 1, 1991): 3547–65. https://doi.org/10.1063/1.348497.
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  - Yu, S., T. Y. Tan, and U. Gösele. “Diffusion mechanism of chromium in GaAs.” Journal of Applied Physics 70, no. 9 (December 1, 1991): 4827–36. https://doi.org/10.1063/1.349049.
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  - Tan, T. Y. “Point defect thermal equilibria in GaAs.” Materials Science and Engineering B 10, no. 3 (November 30, 1991): 227–39. https://doi.org/10.1016/0921-5107(91)90130-N.
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  - Lee, S. T., S. Chen, G. Braunstein, K. Y. Ko, and T. Y. Tan. “Anomalous electrical activation in Si-implanted GaAs/AlGaAs superlattices.” Nuclear Inst. and Methods in Physics Research, B 59–60, no. PART 2 (July 1, 1991): 999–1002. https://doi.org/10.1016/0168-583X(91)95750-8.
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  - Kim, Y., T. Y. Tan, H. Z. Massoud, and R. B. Fair. “Modeling the enhanced diffusion of implanted boron in silicon.” Proceedings the Electrochemical Society 91, no. 4 (January 1, 1991): 304–20.
  - Tan, T. Y. “Point defect thermal equilibria in GaAs.” Materials Science and Engineering B 10, no. 3 (1991): 227–39.
  - Tan, T. Y., S. Yu, and U. Gösele. “Atomistic mechanisms of dopant-induced multiple quantum well mixing and related phenomena.” Optical and Quantum Electronics 23, no. 7 (January 1, 1991). https://doi.org/10.1007/BF00624976.
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  - Tan, T. Y., U. Goesele, and S. Yu. “Point defects, diffusion mechanisms, and superlattice disordering in GaAs-based materials.” Proceedings the Electrochemical Society 91, no. 4 (January 1, 1991): 195–226.
  - Tan, T. Y., U. GÖsele, and S. Yu. “Point defects, diffusion mechanisms, and superlattice disordering in gallium arsenide-based materials.” Critical Reviews in Solid State and Materials Sciences 17, no. 1 (January 1, 1991): 47–106. https://doi.org/10.1080/10408439108244631.
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  - Yu, S., T. Y. Tan, and U. Goesele. “Physical modeling of zinc and beryllium diffusion in gallium arsenide.” Proceedings the Electrochemical Society 91, no. 4 (January 1, 1991): 345–62.
  - Lee, S. T., S. Chen, G. Braunstein, K. Y. Ko, M. L. Ott, and T. Y. Tan. “Void formation, electrical activation, and layer intermixing in Si-implanted GaAs/AlGaAs superlattices.” Applied Physics Letters 57, no. 4 (December 1, 1990): 389–91. https://doi.org/10.1063/1.103701.
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  - Yang, W. S., K. Y. Ahn, J. Lia, P. Smith, T. Y. Tan, and U. Goesele. “Gettering phenomena in directly bonded silicon wafers.” Proceedings the Electrochemical Society 90, no. 7 (December 1, 1990): 628–38.
  - Ahn, K. Y., R. Stengl, T. Y. Tan, U. Gosele, and P. Smith. “Growth, shrinkage, and stability of interfacial oxide layers between directly bonded silicon wafers.” Appl. Phys. A, Solids Surf. (West Germany) A50, no. 1 (1990): 85–94.
  - Ahn, K. Y., R. Stengl, T. Y. Tan, U. Gösele, and P. Smith. “Growth, shrinkage, and stability of interfacial oxide layers between directly bonded silicon wafers.” Applied Physics a Solids and Surfaces 50, no. 1 (January 1, 1990): 85–94. https://doi.org/10.1007/BF00323957.
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  - Chen, S., S. T. Lee, G. Braunstein, K. Y. Ko, L. R. Zheng, and T. Y. Tan. “Void Formation and its Effect on Dopant Diffusion and Carrier Activation in Si-implanted GaAs.” Japanese Journal of Applied Physics 29, no. 11 (January 1, 1990): L1950–53. https://doi.org/10.1143/JJAP.29.L1950.
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  - Ahn, K. Y., R. Stengl, T. Y. Tan, U. Gösele, and P. Smith. “Stability of interfacial oxide layers during silicon wafer bonding.” Journal of Applied Physics 65, no. 2 (December 1, 1989): 561–63. https://doi.org/10.1063/1.343141.
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  - Chen, S., S. T. Lee, G. Braunstein, and T. Y. Tan. “Void formation and inhibition of layer intermixing in ion-impIanted GaAs/AlGaAs superlattices.” Applied Physics Letters 55, no. 12 (December 1, 1989): 1194–96. https://doi.org/10.1063/1.101653.
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  - Kola, R. R., G. A. Rozgonyi, J. Li, W. B. Rogers, T. Y. Tan, K. E. Bean, and K. Lindberg. “Transition metal silicide precipitation in silicon induced by rapid thermal processing and free-surface gettering.” Applied Physics Letters 55, no. 20 (December 1, 1989): 2108–10. https://doi.org/10.1063/1.102342.
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  - Marioton, B. P. R., T. Y. Tan, and U. Gösele. “Influence of dislocations on diffusion-induced nonequilibrium point defects in III-V compounds.” Applied Physics Letters 54, no. 9 (December 1, 1989): 849–51. https://doi.org/10.1063/1.100846.
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  - Rogers, W. B., H. Z. Massoud, R. B. Fair, U. M. Gösele, T. Y. Tan, and G. A. Rozgonyi. “The role of silicon self-interstitial supersaturation in the retardation of oxygen precipitation in Czochralski silicon.” Journal of Applied Physics 65, no. 11 (December 1, 1989): 4215–19. https://doi.org/10.1063/1.343303.
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  - Taylor, W., B. P. R. Marioton, T. Y. Tan, and U. Gosele. “The diffusivity of silicon self-interstitials.” Radiation Effects and Defects in Solids 111–112, no. 1–2 (December 1, 1989): 131–50. https://doi.org/10.1080/10420158908212989.
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  - Yu, S., U. M. Gösele, and T. Y. Tan. “A model of Si diffusion in GaAs based on the effect of the Fermi level.” Journal of Applied Physics 66, no. 7 (December 1, 1989): 2952–61. https://doi.org/10.1063/1.344176.
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  - Gösele, U., K. Y. Ahn, B. P. R. Marioton, T. Y. Tan, and S. T. Lee. “Do oxygen molecules contribute to oxygen diffusion and thermal donor formation in silicon?” Applied Physics a Solids and Surfaces 48, no. 3 (March 1, 1989): 219–28. https://doi.org/10.1007/BF00619388.
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  - Gosele, U., K. Y. Ahn, B. P. R. Marioton, T. Y. Tan, and S. T. Lee. “Do oxygen molecules contribute to oxygen diffusion and thermal donor formation in silicon?” Appl. Phys. A, Solids Surf. (West Germany) A48, no. 3 (1989): 219–28.
  - Stengl, R., T. Tan, and U. Gösele. “A model for the silicon wafer bonding process.” Japanese Journal of Applied Physics 28, no. 10 R (January 1, 1989): 1735–41. https://doi.org/10.1143/JJAP.28.1735.
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  - Tan, T. Y., and U. Gösele. “Mechanisms of doping-enhanced superlattice disordering and of gallium self-diffusion in GaAs.” Applied Physics Letters 52, no. 15 (December 1, 1988): 1240–42. https://doi.org/10.1063/1.99168.
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  - Gosele, U., and T. Y. Tan. “Point defects and diffusion in silicon and gallium arsenide.” Diffus. Defect Data, Solid State Data A, Defect Diffus. Forum (Liechtenstein) A59 (1988): 1–16.
  - Hill, A. J., F. H. Cocks, U. M. Goesele, P. L. Jones, T. Y. Tan, and A. I. Kingon. “Investigation of Y-Ba-Cu-O superconducting materials by positron annihilation lifetime spectroscopy.” High Temperature Superconducting Materials. Preparations, Properties, and Processing, 1988, 305–11.
  - Tan, T. Y., and U. Gösele. “Diffusion mechanisms and superlattice disordering in GaAs.” Materials Science and Engineering B 1, no. 1 (January 1, 1988): 47–65. https://doi.org/10.1016/0921-5107(88)90030-X.
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  - Tan, T. Y., and U. Gösele. “Diffusion mechanisms and superlattice disordering in GaAs.” Materials Science and Engineering B 1, no. 1 (1988): 47–65.
  - Tan, T. Y., and U. Gösele. “Destruction mechanism of III-V compound quantum well structures due to impurity diffusion.” Journal of Applied Physics 61, no. 5 (December 1, 1987): 1841–45. https://doi.org/10.1063/1.338027.
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  - Marioton, B. P. R., U. Gosele, and T. Y. Tan. “ARE SELF-INTERSTITIALS REQUIRED TO EXPLAIN NONEQUILIBRIUM DIFFUSION PHENOMENON IN SILICON?” Chemtronics 1, no. 4 (December 1, 1986): 156–60.
  - Ochrlein, G. S., T. Y. Tan, R. L. Kleinhenz, and J. L. Lindstrom. “ON THE QUESTION OF OXYGEN DIFFUSION DURING OXYGEN RELATED THERMAL DONOR FORMATION IN SILICON.” Materials Research Society Symposia Proceedings 71 (December 1, 1986): 65–67.
  - Tan, T. Y., and C. Y. Kung. “ON OXYGEN PRECIPITATION RETARDATION/RECOVERY PHENOMENA, NUCLEATION INCUBATION PHENOMENON, AND THE EXIGENT-ACCOMMODATION-VOLUME FACTOR OF PRECIPITATION.” Proceedings the Electrochemical Society 86–4 (December 1, 1986): 864–73.
  - Tan, T. Y., and C. Y. Kung. “Oxygen precipitation retardation and recovery phenomena in Czochralski silicon: Experimental observations, nuclei dissolution model, and relevancy with nucleation issues.” Journal of Applied Physics 59, no. 3 (December 1, 1986): 917–31. https://doi.org/10.1063/1.336564.
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  - Tan, T. Y. “Exigent-accommodation-volume of precipitation and formation of oxygen precipitates in silicon.” Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, 1986, 269–79.
  - Tan, T. Y., R. Kleinhenz, and C. P. Schneider. “On the kinetics of oxygen clustering and thermal donor formation in Czochralski silicon.” Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, 1986, 195–204.
  - Goesele, U., and T. Y. Tan. “INFLUENCE OF POINT DEFECTS ON DIFFUSION AND GETTERING IN SILICON.” Materials Research Society Symposia Proceedings 36 (December 1, 1985): 105–16.
  - Tan, T. Y., K. H. Yang, and C. P. Schneider. “Observation of a doping-dependent orientation effect of the depletion of silicon self-interstitials during oxidation.” Journal of Applied Physics 57, no. 6 (December 1, 1985): 1812–15. https://doi.org/10.1063/1.334408.
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  - Yang, K. H., and T. Y. Tan. “ON THE INTERACTION OF INTRINSIC AND EXTRINSIC GETTERING SCHEMES IN SILICON.” Materials Research Society Symposia Proceedings 36 (December 1, 1985): 223–29.
  - Tan, T. Y., and U. Gösele. “Point defects, diffusion processes, and swirl defect formation in silicon.” Applied Physics a Solids and Surfaces 37, no. 1 (May 1, 1985): 1–17. https://doi.org/10.1007/BF00617863.
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  - Braunig, D., K. H. Yang, T. Y. Tan, and C. P. Schneider. “In depth generation lifetime profiling of heat‐treated czochralski silicon.” Physica Status Solidi (A) 92, no. 1 (January 1, 1985): 327–35. https://doi.org/10.1002/pssa.2210920134.
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  - Tan, T. Y., and U. Gosele. “Point defects, diffusion processes, and swirl defect formation in silicon.” Appl. Phys. A, Solids Surf. (West Germany) A37, no. 1 (1985): 1–17.
  - Tan, T. Y., and U. Goesele. “POINT DEFECTS AND DIFFUSION PROCESSES IN SILICON.” Proceedings the Electrochemical Society 84–7 (December 1, 1984): 151–75.
  - Tan, T. Y., and U. Gosele. “POINT DEFECTS AND DIFFUSION PROCESSES IN SILICON.” Electrochemical Society Extended Abstracts 84–1 (December 1, 1984): 60.
  - Tan, T. Y. “Characterization of semiconductor silicon by transmission electron microscopy.” Proceedings of Spie the International Society for Optical Engineering 452 (May 10, 1984): 170–76. https://doi.org/10.1117/12.939302.
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  - Butz, R., G. W. Rubloff, T. Y. Tan, and P. S. Ho. “Chemical and structural aspects of reaction at the Ti/Si interface.” Physical Review B 30, no. 10 (January 1, 1984): 5421–29. https://doi.org/10.1103/PhysRevB.30.5421.
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  - Clabes, J. G., G. W. Rubloff, and T. Y. Tan. “Chemical reaction and Schottky-barrier formation at V/Si interfaces.” Physical Review B 29, no. 4 (January 1, 1984): 1540–50. https://doi.org/10.1103/PhysRevB.29.1540.
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  - Goesele, U., and T. Y. Tan. “ROLE OF VACANCIES AND SELF-INTERSTITIALS IN DIFFUSION AND AGGLOMERATION PHENOMENA IN SILICON.” Proceedings the Electrochemical Society 83–4 (December 1, 1983): 17–36.
  - Smith, D. A., and T. Y. Tan. “GRAIN GROWTH AND GRAIN-BOUNDARY DISLOCATIONS IN POLYSILICON.” Advances in Ceramics 6 (December 1, 1983): 184–91.
  - Tan, T. Y., F. Morehead, and U. Gosele. “DETERMINATION OF VACANCY AND SELF-INTERSTITIAL CONTRIBUTIONS TO THE Si SELF-DIFFUSION COEFFICIENT.” Electrochemical Society Extended Abstracts 83–1 (December 1, 1983): 432–33.
  - Tan, T. Y., F. Morehead, and U. Gosele. “EXAMINATION OF VACANCY AND SELF-INTERSTITIAL CONTRIBUTIONS TO SILICON SELF-DIFFUSION AND SWIRL DEFECT FORMATION.” Proceedings the Electrochemical Society 83–9 (December 1, 1983): 325–36.
  - Tan, T. Y., and B. J. Ginsberg. “Observation of oxidation-enhanced and oxidation-retarded diffusion of antimony in silicon.” Applied Physics Letters 42, no. 5 (December 1, 1983): 448–50. https://doi.org/10.1063/1.93966.
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  - Tan, T. Y., U. Gösele, and F. F. Morehead. “On the nature of point defects and the effect of oxidation on substitutional dopant diffusion in silicon.” Applied Physics a Solids and Surfaces 31, no. 2 (June 1, 1983): 97–108. https://doi.org/10.1007/BF00616312.
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  - Goesele, U., and T. Y. Tan. “THERMAL DONOR FORMATION BY THE AGGLOMERATION OF OXYGEN IN SILICON.” Materials Research Society Symposia Proceedings 14 (January 1, 1983): 153–57.
  - Goesele, U., and T. Y. Tan. “NATURE OF POINT DEFECTS AND THEIR INFLUENCE ON DIFFUSION PROCESSES IN SILICON AT HIGH TEMPERATURES.” Materials Research Society Symposia Proceedings 14 (January 1, 1983): 45–59.
  - Schmid, P. E., P. S. Ho, H. Föll, and T. Y. Tan. “Effects of variations of silicide characteristics on the Schottky-barrier height of silicide-silicon interfaces.” Physical Review B 28, no. 8 (January 1, 1983): 4593–4601. https://doi.org/10.1103/PhysRevB.28.4593.
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  - Tan, T. Y., U. Gosele, and F. F. Morehead. “ON THE NATURE OF POINT DEFECTS AND THE EFFECT OF OXIDATION ON SUBSTITUTIONAL DOPANT DIFFUSION IN SILICON.” Applied Physics A: Solids and Surfaces A 31, no. 2 (1983): 97–108.
  - Tan, T. Y., U. Gosele, and F. F. Morehead. “On the nature of point defects and the effect of oxidation on substitutional dopant diffusion in silicon.” Appl. Phys. A, Solids Surf. (West Germany) A31, no. 2 (1983): 97–108.
  - Tan, T. Y., and B. J. Ginsberg. “OBSERVATION OF OXIDATION-ENHANCED AND -RETARDED DIFFUSION OF ANTIMONY IN SILICON: THE BEHAVIOR OF (111) WAFERS.” Materials Research Society Symposia Proceedings 14 (January 1, 1983): 141–45.
  - Smith, D. A., and T. Y. Tan. “EFFECT OF DOPING AND OXIDATION ON GRAIN GROWTH IN POLYSILICON.” Materials Research Society Symposia Proceedings 5 (December 1, 1982): 65–70.
  - Tan, T. Y., and U. Gösele. “Kinetics of silicon stacking fault growth/shrinkage in an oxidizing ambient containing a chlorine compound.” Journal of Applied Physics 53, no. 7 (December 1, 1982): 4767–78. https://doi.org/10.1063/1.331312.
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  - Tan, T. Y., and U. Gösele. “Oxidation-enhanced or retarded diffusion and the growth or shrinkage of oxidation-induced stacking faults in silicon.” Applied Physics Letters 40, no. 7 (December 1, 1982): 616–19. https://doi.org/10.1063/1.93200.
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  - Gösele, U., and T. Y. Tan. “Oxygen diffusion and thermal donor formation in silicon.” Applied Physics a Solids and Surfaces 28, no. 2 (June 1, 1982): 79–92. https://doi.org/10.1007/BF00617135.
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  - Schmid, P. E., P. S. Ho, and T. Y. Tan. “Summary Abstract: Correlation between Schottky barrier height and phase stoichiometry/structure of silicide–silicon interfaces.” Journal of Vacuum Science and Technology 20, no. 3 (March 1982): 688–89. https://doi.org/10.1116/1.571629.
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  - Gosele, U., and T. Y. Tan. “Oxygen diffusion and thermal donor formation in silicon.” Appl. Phys. A, Solids Surf. (West Germany) A28, no. 2 (1982): 79–92.
  - Foell, H., T. Y. Tan, and W. Krakow. “UNDISSOCIATED DISLOCATIONS AND INTERMEDIATE DEFECTS IN As** plus ION DAMAGED SILICON.” Mat Res Soc Symp Proc 2 (December 1, 1981): 173–77.
  - Krakow, W., T. Y. Tan, and H. Foell. “DETECTION OF POINT DEFECT CHAINS IN ION IRRADIATED SILICON BY HIGH RESOLUTION ELECTRON MICROSCOPY.” Mat Res Soc Symp Proc, December 1, 1981, 185–90.
  - Tan, T. Y. “DISLOCATION NUCLEATION MODELS FROM POINT DEFECT CONDENSATIONS IN SILICON AND GERMANIUM.” Mat Res Soc Symp Proc 2 (December 1, 1981): 163–72.
  - Tan, T. Y., H. Foell, S. Mader, and W. Krakow. “A TENTATIVE IDENTIFICATION OF THE NATURE OF left brace 113 right brace STACKING FAULTS IN Si- MODEL AND EXPERIMENT.” Mat Res Soc Symp Proc 2 (December 1, 1981): 179–84.
  - Tan, T. Y., and U. Gösele. “Growth kinetics of oxidation-induced stacking faults in silicon: A new concept.” Applied Physics Letters 39, no. 1 (December 1, 1981): 86–88. https://doi.org/10.1063/1.92526.
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  - Tice, W. K., and T. Y. Tan. “PRECIPITATION OF OXYGEN AND INTRINSIC GETTERING IN SILICON.” Mat Res Soc Symp Proc 2 (December 1, 1981): 367–80.
  - Corbett, J. W., J. P. Karins, and T. Y. Tan. “Ion-induced defects in semiconductors.” Nuclear Instruments and Methods 182–183, no. PART 1 (January 1, 1981): 457–76. https://doi.org/10.1016/0029-554X(81)90717-5.
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  - Corbett, J. W., J. P. Karins, and T. Y. Tan. “Ion-induced defects in semiconductors.” Nuclear Instruments and Methods 182–183, no. PART 1 (1981): 457–76.
  - Tan, T. Y. “Atomic modelling of homogeneous nucleation of dislocations from condensation of point defects in silicon.” Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties 44, no. 1 (January 1, 1981): 101–25. https://doi.org/10.1080/01418618108244497.
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  - Tan, T. Y., H. Foll, and S. M. Hu. “On the diamond-cubic to hexagonal phase transformation in silicon.” Philos. Mag. A, Phys. Condens. Matter Defects Mech. Prop. (Uk) 44, no. 1 (1981): 127–40.
  - Rimini, E., W. K. Chu, J. E. E. Baglin, T. Y. Tan, and R. T. Hodgson. “Laser annealing of silicon implanted with both argon and arsenic.” Applied Physics Letters 37, no. 1 (December 1, 1980): 81–83. https://doi.org/10.1063/1.91711.
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  - Tan, T. Y., H. Föll, and W. Krakow. “Detection of extended interstitial chains in ion-damaged silicon.” Applied Physics Letters 37, no. 12 (December 1, 1980): 1102–4. https://doi.org/10.1063/1.91888.
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  - Ho, P. S., and T. Y. Tan. “Submicron mask alignment by coherent light sources.” Ibm Tech. Discl. Bull. (Usa) 23, no. 1 (1980): 360–61.
  - Tan, T. Y. “Residual stacking-fault-type contrast in silicon after apparent unfaulting reactions.” Applied Physics Letters 34, no. 10 (December 1, 1979): 714–16. https://doi.org/10.1063/1.90616.
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  - Ho, P. S., T. Y. Tan, J. E. Lewis, and G. W. Rubloff. “CHEMICAL AND STRUCTURAL PROPERTIES OF THE Pd/Si INTERFACE DURING THE INITIAL STAGES OF SILICIDE FORMATION.” Journal of Vacuum Science &Amp; Technology 16, no. 5 (January 1, 1979): 1120–24. https://doi.org/10.1116/1.570171.
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  - Tsu, R., R. T. Hodgson, T. Y. Tan, and J. E. Baglin. “Order-disorder transition in single-crystal silicon induced by pulsed uv laser irradiation.” Physical Review Letters 42, no. 20 (January 1, 1979): 1356–58. https://doi.org/10.1103/PhysRevLett.42.1356.
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  - Goodhew, P. J., T. Y. Tan, and R. W. Balluffi. “Low energy planes for tilt grain boundaries in gold.” Acta Metallurgica 26, no. 4 (January 1, 1978): 557–67. https://doi.org/10.1016/0001-6160(78)90108-6.
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  - Tan, T. Y., E. E. Gardner, and W. K. Tice. “Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si.” Applied Physics Letters 30, no. 4 (December 1, 1977): 175–76. https://doi.org/10.1063/1.89340.
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  - Tan, T. Y., L. L. Wu, and W. K. Tice. “Nucleation of stacking faults at oxide precipitate-dislocation complexes in silicon.” Applied Physics Letters 29, no. 12 (December 1, 1976): 765–67. https://doi.org/10.1063/1.88941.
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  - Tice, W. K., and T. Y. Tan. “Nucleation of CuSi precipitate colonies in oxygen-rich silicon.” Applied Physics Letters 28, no. 9 (December 1, 1976): 564–65. https://doi.org/10.1063/1.88825.
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  - Tan, T. Y., J. C. M. Hwang, P. J. Goodhew, and R. W. Balluffi. “Preparation and applications of thin film specimens containing grain boundaries of controlled geometry.” Thin Solid Films 33, no. 1 (March 15, 1976): 1–11. https://doi.org/10.1016/0040-6090(76)90582-4.
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  - Tan, T. Y., and W. K. Tice. “Oxygen precipitation and the generation of dislocations in silicon.” Philosophical Magazine 34, no. 4 (January 1, 1976): 615–31. https://doi.org/10.1080/14786437608223798.
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  - Sass, S. L., T. Y. Tan, and R. W. Batjjtffi. “The detection of the periodic structure of high-angle twist boundaries I.Electron diffraction study.” Philosophical Magazine 31, no. 3 (January 1, 1975): 559–73. https://doi.org/10.1080/14786437508226538.
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  - Tan, T. Y., S. L. Sass, and R. W. Balluffi. “The detection of the periodic structure of high-angle twist boundaries II. High resolution electron microscopy study.” Philosophical Magazine 31, no. 3 (January 1, 1975): 575–85. https://doi.org/10.1080/14786437508226539.
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  - Wagner, W. R., T. Y. Tan, and R. W. Balluffi. “Faceting of high-angle grain boundaries in the coincidence lattice.” Philosophical Magazine 29, no. 4 (January 1, 1974): 895–904. https://doi.org/10.1080/14786437408222078.
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  - Balluffi, R. W., and T. Y. Tan. “Comments on the range of applicability of the grain boundary (secondary) dislocation model to high angle grain boundaries.” Scripta Metallurgica 6, no. 11 (January 1, 1972): 1033–40. https://doi.org/10.1016/0036-9748(72)90181-0.
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  - Tan, T. Y., W. L. Bell, and G. Thomas. “Crystal thickness dependence of Kikuchi line spacing.” Philos. Mag. (Uk) 24, no. 188 (1971): 417–24.
  - Schwarz, S. E., and T. Y. Tan. “Wave interactions in saturable absorbers.” Applied Physics Letters 10, no. 1 (December 1, 1967): 4–7. https://doi.org/10.1063/1.1754798.
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  - Tan, T., T. Y, T. Nunn, W. M, and W. Jr. “Azimuthally periodic electrostatically focused electron ribbon beams.” Ieee Transactions on Electron Devices ED-13, no. 10 (1966): 706–13.
  - Nunn, D. B., W. M, W. Jr, W. Tan, and T. Y. “Electrostatically-focused ribbon beams employing periodic-cylindrical electron lenses.” Ieee Transactions on Electron Devices ED-11, no. 11 (1964): 524–25.
  - Geipel, H. J., R. B. Shasteen, T. Y. Tan, and W. K. Tice. “Control of stacking fault generation in recessed oxide processing.” Ibm Tech. Discl. Bull. (Usa) 21, no. 4 (n.d.): 1373.
- Book Sections
  - Tan, T. Y. “Point Defects and Diffusion in Semiconductors.” In Handbook of Solid State Diffusion, 239–319, 2017. https://doi.org/10.1016/B978-0-12-804287-8.00005-1.
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- Conference Papers
  - Sopori, B., S. Devayajanam, P. Basnyat, T. Tan, A. Upadhyaya, A. Rohatgi, and H. Xu. “Dissolution of oxygen precipitate nuclei in N-type CZ Si wafers to improve their material quality: Experimental results.” In 2017 Ieee 44th Photovoltaic Specialist Conference, Pvsc 2017, 1–3, 2017. https://doi.org/10.1109/PVSC.2017.8366188.
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