Teh Yu Tan | Scholars@Duke

Teh Yu Tan
Professor Emeritus in the Department of Mechanical Engineering and Materials Science

Professor Tan is conducting fundamental research in materials science and processes related to electronic materials. He and his colleagues have originated the study of the subject of intrinsic gettering which is now widely used to improve yield in integrated circuit fabrications using Czochralski silicon. Primarily because of this work, the semiconductor industry granted him the SEMMY Award in the materials category in 1987. SEMMY is one of the highest awards the industry gives.

He has also studied the basic aspects of the following topics in silicon: precipitation, kinetic process of defect evolution, impurity diffusion mechanisms and point defects. These studies have led to greater understanding of the structure and properties of defects in silicon. Since 1986, his research interests have also included III-V compound semiconducting materials. He is a recipient of the 1994 Alexander Von Humboldt Prize.

Current Appointments & Affiliations

Professor Emeritus in the Department of Mechanical Engineering and Materials Science, Mechanical Engineering and Materials Science, Pratt School of Engineering 2016
Faculty Network Member of The Energy Initiative, Duke University Energy Initiative, Initiatives 2012

Contact Information

186 Engineering Bldg, Durham, NC 27708
Box 90300, Durham, NC 27708-0300
ttan@duke.edu (919) 660-5323

Background
Education, Training, & Certifications
- Ph.D., University of California at Berkeley 1971
- M.S., Tulane University 1965
- B.S., National Taiwan University 1962
Duke Appointment History
- Professor of Mechanical Engineering and Materials Science, Mechanical Engineering and Materials Science, Pratt School of Engineering 1986 - 2016
Research
Selected Grants
- High Sensitivity Low Cost Solid State Neutron Detection awarded by US Department of Homeland Security 2014 - 2019
- (93-0382) Investigation of Superlattice Disordering and Diffusion Mechanics in GaAs awarded by Army Research Office 1989 - 1993
- (90-0301) Investigation of Superlattice Disordering and Diffusion Mechanisms in GaAs awarded by Army Research Office 1989 - 1991
- (89-0044) Superlative Disordering Studies 69GA and 70GA Isotopes awarded by National Science Foundation 1987 - 1990
- (89-0250) Investigation of Superlattice Disordering and Diffusion Mechanisms in GaAs awarded by Army Research Office 1989 - 1990
Publications & Artistic Works
Selected Publications
- Book Sections
  - Tan, TY. "Point Defects and Diffusion in Semiconductors." In Handbook of Solid State Diffusion, 239-319. April 10, 2017. Full Text
- Conference Papers
  - Sopori, B, Devayajanam, S, Basnyat, P, Tan, T, Upadhyaya, A, Rohatgi, A, and Xu, H. "Dissolution of oxygen precipitate nuclei in N-type CZ Si wafers to improve their material quality: Experimental results." May 25, 2018. Full Text
- Journal Articles
  - Sopori, B, Basnyat, P, Devayajanam, S, Tan, T, Upadhyaya, A, Tate, K, Rohatgi, A, and Xu, H. "Dissolution of Oxygen Precipitate Nuclei in n-Type CZ-Si Wafers to Improve Their Material Quality: Experimental Results." Ieee Journal of Photovoltaics 7, no. 1 (January 2017): 97-103. Full Text
  - Li, N, Li, W, Liu, L, and Tan, TY. "A nucleation-growth model of nanowires produced by the vapor-liquid-solid process." JOURNAL OF APPLIED PHYSICS 114, no. 6 (August 14, 2013). Full Text Link to Item
  - Sopori, B, Tan, T, and Rupnowski, P. "Photovoltaic materials and devices." International Journal of Photoenergy 2012 (2012). Full Text
  - Curtaroloa, S, Awasthia, N, Setyawana, W, Lia, N, Jianga, A, Tan, TY, Morab, E, Boltonc, K, and Harutyunyanb, AR. "Thermodynamics of carbon in iron nanoparticles at low temperature: Reduced solubility and size-induced nucleation of cementite." Physics Procedia 6 (2010): 16-26. Full Text
  - Li, N, Tan, TY, and Gösele, U. "Transition region width of nanowire hetero- and pn-junctions grown using vapor-liquid-solid processes." Applied Physics A: Materials Science and Processing 90, no. 4 (2008): 591-596. Full Text
  - Li, H, Li, N, Joshi, SM, and Tan, TY. "Predominance of alternate diffusion mechanisms for the interstitial- substitutional impurity gold in silicon." Materials Research Society Symposium Proceedings 994 (2007): 45-50.
  - Li, N, Tan, TY, and Gösele, U. "Chemical tension and global equilibrium in VLS nanostructure growth process: From nanohillocks to nanowires." Applied Physics A: Materials Science and Processing 86, no. 4 (2007): 433-440. Full Text
  - Li, N, Tan, TY, and Gösele, U. "Chemical tension in VLS nanostructure growth process: From nanohillocks to nanowires." Materials Research Society Symposium Proceedings 1017 (2007): 20-25.
  - Zhao, L, Li, N, Langner, A, Steinhart, M, Tan, TY, Pippel, E, Hofmeister, H, Tu, K-N, and Gösele, U. "Crystallization of amorphous SiO₂ microtubes catalyzed by lithium." Advanced Functional Materials 17, no. 12 (2007): 1952-1957. Full Text
  - Tan, TY, and Gösele, U. "Diffusion in semiconductors." (December 1, 2005): 165-208. (Chapter) Full Text
  - Negoita, MD, and Tan, TY. "Metallic precipitate contribution to carrier generation in metal-oxide-semiconductor capacitors due to the Schottky effect." Journal of Applied Physics 95, no. 1 (2004): 191-198. Full Text
  - Schubert, L, Werner, P, Zakharov, ND, Gerth, G, Kolb, FM, Long, L, Gösele, U, and Tan, TY. "Silicon nanowhiskers grown on 〈111〉Si substrates by molecular-beam epitaxy." Applied Physics Letters 84, no. 24 (2004): 4968-4970. Full Text
  - Tan, TY, Li, N, and Gösele, U. "On the thermodynamic size limit of nanowires grown by the vapor-liquid-solid process." Applied Physics A: Materials Science and Processing 78, no. 4 (2004): 519-526. Full Text
  - Negoita, MD, and Tan, TY. "Metallic precipitate contribution to generation and recombination currents in p-n junction devices due to the Schottky effect." Journal of Applied Physics 94, no. 8 (2003): 5064-5070. Full Text
  - Tan, TY, Li, N, and Gösele, U. "Is there a thermodynamic size limit of nanowires grown by the vapor-liquid-solid process?." Applied Physics Letters 83, no. 6 (2003): 1199-1201. Full Text
  - Plekhanov, PS, Negoita, MD, and Tan, TY. "Erratum: Effect of Al-induced gettering and back surface field on the efficiency of Si solar cells (Journal of Applied Physics (2001) 90 (5388))." Journal of Applied Physics 91, no. 8 (2002): 5508--. Full Text
  - Tan, TY, Lee, ST, and Gösele, U. "A model for growth directional features in silicon nanowires." Applied Physics A: Materials Science and Processing 74, no. 3 (2002): 423-432. Full Text
  - Tan, TY, Lee, ST, and Gösele, U. "Modeling growth directional features of silicon nanowires obtained using SiO." Materials Research Society Symposium - Proceedings 719 (2002): 235-240.
  - Tan, TY. "Recent progresses in understanding gettering in silicon." Materials Research Society Symposium - Proceedings 719 (2002): 89-100.
  - Plekhanov, PS, Negoita, MD, and Tan, TY. "Effect of Al-induced gettering and back surface field on the efficiency of Si solar cells." Journal of Applied Physics 90, no. 10 (November 15, 2001): 5388-5394. Full Text
  - Joshi, SM, Gösele, UM, and Tan, TY. "Extended high temperature Al gettering for improvement and homogenization of minority carrier diffusion lengths in multicrystalline Si." Solar Energy Materials and Solar Cells 70, no. 2 (2001): 231-238. Full Text
  - Tan, T-Y, Cheng, TH, Bose, SK, and Chai, T-Y. "Adaptive resource negotiation based control for real time applications." Comput. Commun. (Netherlands) 24, no. 13 (2001): 1283-1298. (Academic Article) Full Text Link to Item
  - Tan, TY, and Plekhanov, PS. "A quantitative model of the electrical activity of metal silicide precipitates in silicon based on the Schottky effect." Materials Research Society Symposium - Proceedings 669 (2001): J6111-J6116.
  - Plekhanov, PS, and Tan, TY. "Schottky effect model of electrical activity of metallic precipitates in silicon." Applied Physics Letters 76, no. 25 (2000): 3777-3779.
  - Plekhanov, PS, Gafiteanu, R, Gösele, UM, and Tan, TY. "Modeling of gettering of precipitated impurities from Si for carrier lifetime improvement in solar cell applications." Journal of Applied Physics 86, no. 5 (September 1999): 2453-2458. Full Text
  - Chen, C-H, Gösele, UM, and Tan, TY. "Dopant diffusion and segregation in semiconductor heterostructures: Part III, Diffusion of Si into GaAs." Applied Physics A: Materials Science and Processing 69, no. 3 (1999): 313-321. Full Text
  - Chen, C-H, Gösele, UM, and Tan, TY. "Dopant diffusion and segregation in semiconductor heterostructures: Part 2. B in Ge_xSi_1-x/Si structures." Applied Physics A: Materials Science and Processing 68, no. 1 (1999): 19-24.
  - Chen, C-H, Gösele, UM, and Tan, TY. "Thermal equilibrium concentrations of the amphoteric dopant Si and the associated carrier concentrations in GaAs." Journal of Applied Physics 86, no. 10 (1999): 5376-5384.
  - Chen, C-H, Gösele, UM, and Tan, TY. "Dopant diffusion and segregation in semiconductor heterostructures: Part 1. Zn and Be in III-V compound superlattices." Applied Physics A: Materials Science and Processing 68, no. 1 (1999): 9-18.
  - Chen, C-HO, Gösele, UM, and Tan, TY. "Fermi-level effect and junction carrier concentration effect on p-type dopant distribution in III-V compound superlattices." Materials Research Society Symposium - Proceedings 535 (1999): 219-224.
  - Chen, C-HO, Gösele, UM, and Tan, TY. "Fermi-level effect and junction carrier concentration effect on boron distribution in Ge^Si^/Si heterostructures." Materials Research Society Symposium - Proceedings 535 (1999): 275-280.
  - Scholz, RF, Werner, P, Gösele, U, and Tan, TY. "The contribution of vacancies to carbon out-diffusion in silicon." Applied Physics Letters 74, no. 3 (1999): 392-394.
  - Scholz, RF, Gösele, UM, Breitenstein, O, Egger, U, and Tan, TY. "Cathodoluminescence Investigation of Diffusion Studies on the Arsenic Sublattice in Gallium Arsenide." Solid State Phenomena 63-64 (December 1998): 183-190. Full Text
  - Chen, C-H, Gosele, U, and Tan, TY. "Fermi-level effect on group III atom interdiffusion in III-V compounds: bandgap heterogeneity and low silicon-doping." Materials Research Society Symposium - Proceedings 490 (1998): 105-110.
  - Chen, C-H, Gosele, U, and Tan, TY. "Simulation of under- and supersaturation of gallium vacancies in gallium arsenide during silicon in- and outdiffusion." Materials Research Society Symposium - Proceedings 490 (1998): 99-104.
  - Joshi, SM, Gosele, UM, and Tan, TY. "Gold diffusion in silicon during gettering by an aluminum layer." Materials Research Society Symposium - Proceedings 490 (1998): 117-122.
  - Kästner, G, Gösele, U, and Tan, TY. "A model of strain relaxation in hetero-epitaxial films on compliant substrates." Applied Physics A: Materials Science and Processing 66, no. 1 (1998): 13-22.
  - Plekhanov, PS, Gosele, UM, and Tan, TY. "Nucleation and growth of voids in silicon." Materials Research Society Symposium - Proceedings 490 (1998): 77-82.
  - Plekhanov, PS, Gösele, UM, and Tan, TY. "Modeling of nucleation and growth of voids in silicon." Journal of Applied Physics 84, no. 2 (1998): 718-726.
  - Scholz, R, Gösele, U, Huh, J-Y, and Tan, TY. "Carbon-induced undersaturation of silicon self-interstitials." Applied Physics Letters 72, no. 2 (1998): 200-202. Full Text
  - Schultz, M, Egger, U, Scholz, R, Breitenstein, O, Gösele, U, and Tan, TY. "Experimental and computer simulation studies of diffusion mechanisms on the arsenic sublattice of gallium arsenide." Journal of Applied Physics 83, no. 10 (1998): 5295-5301.
  - Sopori, BL, Chen, W, Alleman, J, Matson, R, Ravindra, NM, and Tan, TY. "Grain enhancement of polycrystalline silicon films aided by optical excitation." Materials Research Society Symposium - Proceedings 485 (1998): 95-100.
  - Tan, TY. "Mass transport equations unifying descriptions of isothermal diffusion, thermomigration, segregation, and position-dependent diffusivity." Applied Physics Letters 73, no. 18 (1998): 2678-2680. Full Text
  - Tong, Q-Y, Scholz, R, Gösele, U, Lee, T-H, Huang, L-J, Chao, Y-L, and Tan, TY. "A "smarter-cut" approach to low temperature silicon layer transfer." Applied Physics Letters 72, no. 1 (1998): 49-51. Full Text
  - Tan, TY, and Gosele, U. "Twist wafer bonded ''fixed-film'' versus ''compliant'' substrates: Correlated misfit dislocation generation and contaminant gettering." APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 64, no. 6 (June 1997): 631-633. Full Text Link to Item
  - Egger, U, Schultz, M, Werner, P, Breitenstein, O, Tan, TY, Gösele, U, Franzheld, R, Uematsu, M, and Ito, H. "Interdiffusion studies in GaAsP/GaAs and GaAsSb/GaAs superlattices under various arsenic vapor pressures." Journal of Applied Physics 81, no. 9 (1997): 6056-6061.
  - Goesele, U, Conrad, D, Werner, P, Tong, Q-Y, Gafiteanu, R, and Tan, TY. "Point defects, diffusion and gettering in silicon." Materials Research Society Symposium - Proceedings 469 (1997): 13-24.
  - Gösele, U, Tan, TY, Schultz, M, Egger, U, Werner, P, Scholz, R, and Breitenstein, O. "Diffusion in GaAs and related compounds: Recent developments." Defect and Diffusion Forum 143-147 (1997): 1079-1094. Full Text
  - Schroer, E, Hopfe, S, Werner, P, Gösele, U, Duscher, G, Rühle, M, and Tan, TY. "Oxide precipitation at silicon grain boundaries." Applied Physics Letters 70, no. 3 (1997): 327-329.
  - Sopori, BL, Alleman, J, Chen, W, Tan, TY, and Ravindra, NM. "Grain enhancement of thin silicon layers using optical processing." Materials Research Society Symposium - Proceedings 470 (1997): 419-424.
  - Tan, TY, Plekhanov, P, and Gösele, UM. "Nucleation barrier of voids and dislocation loops in silicon." Applied Physics Letters 70, no. 13 (1997): 1715-1717.
  - Tan, TY, and Gösele, U. "Twist wafer bonded "fixed-film" versus "compliant" substrates: Correlated misfit dislocation generation and contaminant gettering." Applied Physics A: Materials Science and Processing 64, no. 6 (1997): 631-633.
  - Sopori, BL, Jastrzebski, L, and Tan, T. "Comparison of gettering in single- and multicrystalline silicon for solar cells." Conference Record of the IEEE Photovoltaic Specialists Conference (1996): 625-628.
  - Tan, TY, and Gösele, UM. "Effects of p-type dopants on enhancing AlAs/GaAs superlattice disordering." Materials Chemistry and Physics 44, no. 1 (1996): 45-50. Full Text
  - Tong, Q-Y, Lee, T-H, Kim, W-J, Tan, TY, Goesele, U, You, H-M, Yun, W, and Sin, JKO. "Feasibility study of VLSI device layer transfer by CMP PETEOS direct bonding." IEEE International SOI Conference (1996): 36-37.
  - Chen, C-H, and Tan, TY. "On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects." Applied Physics A: Materials Science and Processing 61, no. 4 (1995): 397-405. Full Text
  - Chen, CH, and Tan, TY. "On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects." Appl. Phys. A, Mater. Sci. Process. (Germany) A61, no. 4 (1995): 397-405. (Academic Article) Full Text Link to Item
  - Gafiteanu, R, Gosele, U, and Tan, TY. "Phosphorus and aluminum gettering of gold in silicon: simulation and optimization considerations." Materials Research Society Symposium - Proceedings 378 (1995): 297-302.
  - Huh, J-Y, Gösele, U, and Tan, TY. "Coprecipitation of oxygen and carbon in Czochralski silicon: A growth kinetic approach." Journal of Applied Physics 78, no. 10 (1995): 5926-5935. Full Text
  - Huh, J-Y, Tan, TY, and Gösele, U. "Model of partitioning of point defect species during precipitation of a misfitting compound in Czochralski silicon." Journal of Applied Physics 77, no. 11 (1995): 5563-5571. Full Text
  - Joshi, SM, Goesele, UM, and Tan, TY. "Minority carrier diffusion length improvement in Czochralski silicon by aluminum gettering." Materials Research Society Symposium - Proceedings 378 (1995): 279-284.
  - Joshi, SM, Gösele, UM, and Tan, TY. "Improvement of minority carrier diffusion length in Si by Al gettering." Journal of Applied Physics 77, no. 8 (1995): 3858-3863. Full Text
  - Tan, TY. "Point defects and diffusion mechanisms pertinent to the Ga sublattice of GaAs." Materials Chemistry & Physics 40, no. 4 (1995): 245-252.
  - Tong, Q-Y, Kaido, G, Tong, L, Reiche, M, Shi, F, Steinkirchner, J, Tan, TY, and Gosele, U. "Simple chemical treatment for preventing thermal bubbles in silicon water bonding." Journal of the Electrochemical Society 142, no. 10 (1995): L201-L203.
  - Tong, Q-Y, Kidao, G, Tan, TY, and Gosele, U. "Wafer bonding of Si with dissimilar materials." International Conference on Solid-State and Integrated Circuit Technology Proceedings (1995): 524-526.
  - Uematsu, M, Werner, P, Schultz, M, Tan, TY, and Gösele, UM. "Sulfur diffusion and the interstitial contribution to arsenic self-diffusion in GaAs." Applied Physics Letters 67 (1995): 2863--. Full Text
  - Gafiteanu, R, You, HM, Goesele, U, and Tan, TY. "Diffusion-segregation equation for simulation in heterostructures." Materials Research Society Symposium Proceedings 318 (1994): 31-37.
  - Hsia, SL, McGuire, GE, Tan, TY, Smith, PL, and Lynch, WT. "High resistivity Co and Ti silicide formation on silicon-on-insulator substrates." Thin Solid Films 253, no. 1-2 (1994): 462-466.
  - Hsia, SL, Tan, TY, Smith, PL, and McGuire, GE. "Arsenic diffusion and segregation behavior at the interface of epitaxial CoSi₂ film and Si substrate." Materials Research Society Symposium Proceedings 320 (1994): 409-414.
  - Hsia, SL, Tan, TY, Smith, PL, and McGuire, GE. "Assured epitaxial CoSi₂ phase formation on (001) Si-on-insulator substrates using CoSi/Ti bimetallic source materials." Digest of Technical Papers - Symposium on VLSI Technology (1994): 123-124.
  - Hsia, SL, Tan, TY, Smith, PL, and McGuire, GE. "CoSi and CoSi₂ phase formation on bulk and SOI Si substrates." Materials Research Society Symposium Proceedings 320 (1994): 373-378.
  - Tan, TY, and Taylor, WJ. "Chapter 9 Mechanisms of Oxygen Precipitation: Some Quantitative Aspects." Semiconductors and Semimetals 42, no. C (1994): 353-390. Full Text
  - Tan, TY. "Thermal equilibrium concentrations of point defects in gallium arsenide." Journal of Physics and Chemistry of Solids 55, no. 10 (1994): 917-929.
  - Taylor, WJ, Gösele, UM, and Tan, TY. "Precipitate strain relief via point defect interaction: models for SiO₂ in silicon." Materials Chemistry and Physics 36, no. 3-4 (1994): 389--.
  - TAYLOR, WJ, GOSELE, UM, and TAN, TY. "COPRECIPITATION OF CARBON AND OXYGEN IN SILICON - THE DOMINANT FLUX CRITERION." JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 32, no. 11A (November 1993): 4857-4862. Full Text Link to Item
  - Hsia, SL, Tan, TY, Smith, PL, and McGuire, GE. "Formation mechanism of epitaxial CoSi₂ films on (001) Si using Ti-Co bimetallic layer source materials." Materials Research Society Symposium Proceedings 280 (1993): 603-608.
  - Jäger, W, Rucki, A, Urban, K, Hettwer, H-G, Stolwijk, NA, Mehrer, H, and Tan, TY. "Formation of void/Ga-precipitate pairs during Zn diffusion into GaAs: The competition of two thermodynamic driving forces." Journal of Applied Physics 74, no. 7 (1993): 4409-4422. Full Text
  - Tan, TY, You, H-M, and Gosele, UM. "Thermal equilibrium concentrations and effects of negatively charged Ga vacancies in n-type GaAs." Appl. Phys. A, Solids Surf. (Germany) A56, no. 3 (1993): 249-258. (Academic Article)
  - Tan, TY, You, H-M, and Gosele, UM. "Thermal equilibrium concentrations and effects of Ga vacancies in n-type GaAs." Materials Research Society Symposium Proceedings 300 (1993): 377-390.
  - Tan, TY, You, H-M, and Gösele, UM. "Thermal equilibrium concentrations and effects of negatively charged Ga vacancies in n-type GaAs." Applied Physics A Solids and Surfaces 56, no. 3 (1993): 249-258. Full Text
  - Taylor, WJ, Gosele, UM, and Tan, TY. "Co-precipitation of carbon and oxygen in silicon: The dominant flux criterion." Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 32, no. 11 A (1993): 4857-4862.
  - Taylor, WJ, Gösele, UM, and Tan, TY. "Precipitate strain relief via point defect interaction: models for SiO₂ in silicon." Materials Chemistry and Physics 34, no. 2 (1993): 166-174.
  - Taylor, WJ, Tan, TY, and Gösele, U. "Carbon precipitation in silicon: Why is it so difficult." Applied Physics Letters 62, no. 25 (1993): 3336-3338. Full Text
  - You, H-M, Gosele, UM, and Tan, TY. "Crystal surface stoichiometry and the Fermi level effects on outdiffusion of Si in GaAs." Materials Research Society Symposium Proceedings 282 (1993): 151-156.
  - You, H-M, Gösele, UM, and Tan, TY. "Simulation of the transient indiffusion-segregation process of triply negatively charged Ga vacancies in GaAs and AlAs/GaAs superlattices." Journal of Applied Physics 74, no. 4 (1993): 2461-2470. Full Text
  - You, H-M, Gösele, UM, and Tan, TY. "A study of Si outdiffusion from predoped GaAs." Journal of Applied Physics 73, no. 11 (1993): 7207-7216. Full Text
  - You, HM, Tan, TY, Gosele, UM, Hofler, GE, Hsieh, KC, and Jr, NH. "Layer disordering and carrier concentration in heavily carbon-doped AlGaAs/GaAs superlattices." Materials Research Society Symposium Proceedings 300 (1993): 409-414.
  - You, HM, Tan, TY, Gösele, UM, Lee, S-T, Höfler, GE, Hsieh, KC, and Jr, NH. "Al-Ga interdiffusion, carbon acceptor diffusion, and hole reduction in carbon-doped Al_0.4Ga_0.6As/GaAs superlattices: The As ₄ pressure effect." Journal of Applied Physics 74, no. 4 (1993): 2450-2460. Full Text
  - Zimmermann, H, Gösele, U, and Tan, TY. "Diffusion of Fe in InP via the kick-out mechanism." Applied Physics Letters 62, no. 1 (1993): 75-77. Full Text
  - Zimmermann, H, Gösele, U, and Tan, TY. "Modeling of zinc-indiffusion-induced disordering of GaAs/AlAs superlattices." Journal of Applied Physics 73, no. 1 (1993): 150-157. Full Text
  - Hsia, SL, Tan, TY, Smith, P, and McGuire, GE. "Resistance and structural stabilities of epitaxial CoSi₂ films on (001) Si substrates." Journal of Applied Physics 72, no. 5 (1992): 1864-1873. Full Text
  - Li, J, Yang, W-S, Tan, TY, Chevacharoenkul, S, and Chapman, R. "Liquid silicide formation on the Si wafer free surface during Ni diffusion at 1200°C." Journal of Applied Physics 71, no. 1 (1992): 196-203. Full Text
  - Li, J, Yang, W-S, and Tan, TY. "Enhancement of gold solubility in silicon wafers." Journal of Applied Physics 71, no. 1 (1992): 527-529. Full Text
  - Tan, TY, You, HM, Yu, S, Gösele, UM, Jäger, W, Boeringer, DW, Zypman, F, Tsu, R, and Lee, S-T. "Disordering in ⁶⁹GaAs/⁷¹GaAs isotope superlattice structures." Journal of Applied Physics 72, no. 11 (1992): 5206-5212. Full Text
  - Taylor, WJ, Gösele, U, and Tan, TY. "SiO₂ precipitate strain relief in Czochralski Si: Self-interstitial emission versus prismatic dislocation loop punching." Journal of Applied Physics 72, no. 6 (1992): 2192-2196. Full Text
  - Tan, TY. "Point defect thermal equilibria in GaAs." Materials Science and Engineering: B 10, no. 3 (November 1991): 227-239. Full Text
  - Chen, S, Lee, S-T, Braunstein, G, Ko, KY, and Tan, TY. "Distribution mechanism of voids in Si-implanted GaAs." Journal of Applied Physics 70, no. 2 (1991): 656-660. Full Text
  - Hsia, SL, Tan, TY, Smith, P, and McGuire, GE. "Formation of epitaxial CoSi₂ films on (001) silicon using Ti-Co alloy and bimetal source materials." Journal of Applied Physics 70, no. 12 (1991): 7579-7587. Full Text
  - Kim, Y, Tan, TY, Massoud, HZ, and Fair, RB. "Modeling the enhanced diffusion of implanted boron in silicon." Proceedings - The Electrochemical Society 91, no. 4 (1991): 304-320.
  - Lee, S-T, Chen, S, Braunstein, G, Ko, K-Y, and Tan, TY. "Anomalous electrical activation in Si-implanted GaAs/AlGaAs superlattices." Nuclear Inst. and Methods in Physics Research, B 59-60, no. PART 2 (1991): 999-1002.
  - Tan, TY, Goesele, U, and Yu, S. "Point defects, diffusion mechanisms, and superlattice disordering in GaAs-based materials." Proceedings - The Electrochemical Society 91, no. 4 (1991): 195-226.
  - Tan, TY, Goesele, U, and Yu, S. "Point defects, diffusion mechanisms, and superlattice disordering in gallium arsenide-based materials." Critical Reviews in Solid State and Materials Sciences 17, no. 1 (1991): 47-106.
  - Tan, TY, Yu, S, and Gösele, U. "Determination of vacancy and self-interstitial contributions to gallium self-diffusion in GaAs." Journal of Applied Physics 70, no. 9 (1991): 4823-4826. Full Text
  - Tan, TY, Yu, S, and Gösele, U. "Atomistic mechanisms of dopant-induced multiple quantum well mixing and related phenomena." Optical and Quantum Electronics 23, no. 7 (1991): S863-S881. Full Text
  - Tan, TY. "Point defect thermal equilibria in GaAs." Materials Science and Engineering B 10, no. 3 (1991): 227-239.
  - Taylor, WJ, Tan, TY, and Gösele, UM. "Oxygen precipitation in silicon: The role of strain and self-interstitials." Applied Physics Letters 59, no. 16 (1991): 2007-2009. Full Text
  - Yu, S, Tan, TY, and Goesele, U. "Physical modeling of zinc and beryllium diffusion in gallium arsenide." Proceedings - The Electrochemical Society 91, no. 4 (1991): 345-362.
  - Yu, S, Tan, TY, and Gösele, U. "Diffusion mechanism of zinc and beryllium in gallium arsenide." Journal of Applied Physics 69, no. 6 (1991): 3547-3565. Full Text
  - Yu, S, Tan, TY, and Gösele, U. "Diffusion mechanism of chromium in GaAs." Journal of Applied Physics 70, no. 9 (1991): 4827-4836. Full Text
  - Ahn, K-Y, Stengl, R, Tan, TY, Gosele, U, and Smith, P. "Growth, shrinkage, and stability of interfacial oxide layers between directly bonded silicon wafers." Appl. Phys. A, Solids Surf. (West Germany) A50, no. 1 (1990): 85-94. (Academic Article)
  - Ahn, K-Y, Stengl, R, Tan, TY, Gosele, U, and Smith, P. "Growth, shrinkage, and stability of interfacial oxide layers between directly bonded silicon wafers." Applied Physics A: Solids and Surfaces 50, no. 1 (1990): 85-94.
  - Chen, S, Lee, S-T, Braunstein, G, Ko, K-Y, Zheng, LR, and Tan, TY. "Void formation and its effect on dopant diffusion and carrier activation in Si-implanted GaAs." Jpn. J. Appl. Phys. 2, Lett. (Japan) 29, no. 11 (1990): 1950-1953. (Academic Article)
  - Lee, S-T, Chen, S, Braunstein, G, Ko, K-Y, Ott, ML, and Tan, TY. "Void formation, electrical activation, and layer intermixing in Si-implanted GaAs/AlGaAs superlattices." Applied Physics Letters 57, no. 4 (1990): 389-391. Full Text
  - Yang, WS, Ahn, KY, Lia, J, Smith, P, Tan, TY, and Goesele, U. "Gettering phenomena in directly bonded silicon wafers." Proceedings - The Electrochemical Society 90, no. 7 (1990): 628-638.
  - Ahn, K-Y, Stengl, R, Tan, TY, Gösele, U, and Smith, P. "Stability of interfacial oxide layers during silicon wafer bonding." Journal of Applied Physics 65, no. 2 (1989): 561-563. Full Text
  - Chen, S, Lee, S-T, Braunstein, G, and Tan, TY. "Void formation and inhibition of layer intermixing in ion-impIanted GaAs/AlGaAs superlattices." Applied Physics Letters 55, no. 12 (1989): 1194-1196. Full Text
  - Gosele, U, Ahn, K-Y, Marioton, BPR, Tan, TY, and Lee, S-T. "Do oxygen molecules contribute to oxygen diffusion and thermal donor formation in silicon?." Appl. Phys. A, Solids Surf. (West Germany) A48, no. 3 (1989): 219-228. (Academic Article)
  - Gösele, U, Ahn, K-Y, Marioton, BPR, Tan, TY, and Lee, S-T. "Do oxygen molecules contribute to oxygen diffusion and thermal donor formation in silicon?." Applied Physics A Solids and Surfaces 48, no. 3 (1989): 219-228. Full Text
  - Kola, RR, Rozgonyi, GA, Li, J, Rogers, WB, Tan, TY, Bean, KE, and Lindberg, K. "Transition metal silicide precipitation in silicon induced by rapid thermal processing and free-surface gettering." Applied Physics Letters 55, no. 20 (1989): 2108-2110. Full Text
  - Marioton, BPR, Tan, TY, and Gösele, U. "Influence of dislocations on diffusion-induced nonequilibrium point defects in III-V compounds." Applied Physics Letters 54, no. 9 (1989): 849-851. Full Text
  - Rogers, WB, Massoud, HZ, Fair, RB, Gösele, UM, Tan, TY, and Rozgonyi, GA. "The role of silicon self-interstitial supersaturation in the retardation of oxygen precipitation in Czochralski silicon." Journal of Applied Physics 65, no. 11 (1989): 4215-4219. Full Text
  - Stengl, R, Tan, T, and Gosele, U. "Model for the silicon wafer bonding process." Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 28, no. 10 (1989): 1735-1741.
  - Taylor, W, Marioton, BPR, Tan, TY, and Gosele, U. "The diffusivity of silicon self-interstitials." Radiat. Eff. Defects Solids (UK) 111-112, no. 1-2 (1989): 131-150. (Academic Article)
  - Yu, S, Gösele, UM, and Tan, TY. "A model of Si diffusion in GaAs based on the effect of the Fermi level." Journal of Applied Physics 66, no. 7 (1989): 2952-2961. Full Text
  - TAN, TY, and GOSELE, U. "DIFFUSION MECHANISMS AND SUPERLATTICE DISORDERING IN GAAS." MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 1, no. 1 (August 1988): 47-65. Full Text Link to Item
  - Gosele, U, and Tan, TY. "Point defects and diffusion in silicon and gallium arsenide." Diffus. Defect Data, Solid State Data A, Defect Diffus. Forum (Liechtenstein) A59 (1988): 1-16. (Academic Article)
  - Hill, AJ, Cocks, FH, Goesele, UM, Jones, PL, Tan, TY, and Kingon, AI. "Investigation of Y-Ba-Cu-O superconducting materials by positron annihilation lifetime spectroscopy." High-Temperature Superconducting Materials. Preparations, Properties, and Processing (1988): 305-311. (Academic Article)
  - Tan, TY, and Gösele, U. "Mechanisms of doping-enhanced superlattice disordering and of gallium self-diffusion in GaAs." Applied Physics Letters 52, no. 15 (1988): 1240-1242. Full Text
  - Tan, TY, and Gösele, U. "Diffusion mechanisms and superlattice disordering in GaAs." Materials Science and Engineering B 1, no. 1 (1988): 47-65.
  - Tan, TY, and Gösele, U. "Destruction mechanism of III-V compound quantum well structures due to impurity diffusion." Journal of Applied Physics 61, no. 5 (1987): 1841-1845. Full Text
  - Marioton, BPR, Gosele, U, and Tan, TY. "ARE SELF-INTERSTITIALS REQUIRED TO EXPLAIN NONEQUILIBRIUM DIFFUSION PHENOMENON IN SILICON?." Chemtronics 1, no. 4 (1986): 156-160.
  - Ochrlein, GS, Tan, TY, Kleinhenz, RL, and Lindstrom, JL. "ON THE QUESTION OF OXYGEN DIFFUSION DURING OXYGEN RELATED THERMAL DONOR FORMATION IN SILICON." Materials Research Society Symposia Proceedings 71 (1986): 65-67.
  - Tan, TY, Kleinhenz, R, and Schneider, CP. "On the kinetics of oxygen clustering and thermal donor formation in Czochralski silicon." Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon (1986): 195-204. (Academic Article)
  - Tan, TY, and Kung, CY. "ON OXYGEN PRECIPITATION RETARDATION/RECOVERY PHENOMENA, NUCLEATION INCUBATION PHENOMENON, AND THE EXIGENT-ACCOMMODATION-VOLUME FACTOR OF PRECIPITATION." Proceedings - The Electrochemical Society 86-4 (1986): 864-873.
  - Tan, TY, and Kung, CY. "OXYGEN PRECIPITATION RETARDATION AND RECOVERY PHENOMENA IN CZOCHRALSKI SILICON: EXPERIMENTAL OBSERVATIONS, NUCLEI DISSOLUTION MODEL, AND RELEVANCY WITH NUCLEATION ISSUES." Journal of Applied Physics 59, no. 3 (1986): 917-931. Full Text
  - Tan, TY. "Exigent-accommodation-volume of precipitation and formation of oxygen precipitates in silicon." Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon (1986): 269-279. (Academic Article)
  - Braunig, D, Yang, KH, Tan, TY, and Schneider, CP. "IN DEPTH GENERATION LIFETIME PROFILING OF HEAT-TREATED CZOCHRALSKI SILICON." Physica Status Solidi (A) Applied Research 92, no. 1 (1985): 327-335.
  - Goesele, U, and Tan, TY. "INFLUENCE OF POINT DEFECTS ON DIFFUSION AND GETTERING IN SILICON." Materials Research Society Symposia Proceedings 36 (1985): 105-116.
  - Tan, TY, Yang, KH, and Schneider, CP. "Observation of a doping-dependent orientation effect of the depletion of silicon self-interstitials during oxidation." Journal of Applied Physics 57, no. 6 (1985): 1812-1815. Full Text
  - Tan, TY, and Gosele, U. "Point defects, diffusion processes, and swirl defect formation in silicon." Appl. Phys. A, Solids Surf. (West Germany) A37, no. 1 (1985): 1-17. (Academic Article)
  - Tan, TY, and Gosele, U. "POINT DEFECTS, DIFFUSION PROCESSES, AND SWIRL DEFECT FORMATION IN SILICON." Applied Physics A: Solids and Surfaces A37, no. 1 (1985): 1-17.
  - Yang, KH, and Tan, TY. "ON THE INTERACTION OF INTRINSIC AND EXTRINSIC GETTERING SCHEMES IN SILICON." Materials Research Society Symposia Proceedings 36 (1985): 223-229.
  - Butz, R, Rubloff, GW, Tan, TY, and Ho, PS. "Chemical and structural aspects of reaction at the Ti/Si interface." Physical Review B 30, no. 10 (1984): 5421-5429. Full Text
  - Clabes, JG, Rubloff, GW, and Tan, TY. "Chemical reaction and Schottky-barrier formation at V/Si interfaces." Physical Review B 29, no. 4 (1984): 1540-1550. Full Text
  - Tan, TY, and Goesele, U. "POINT DEFECTS AND DIFFUSION PROCESSES IN SILICON." Proceedings - The Electrochemical Society 84-7 (1984): 151-175.
  - Tan, TY, and Gosele, U. "POINT DEFECTS AND DIFFUSION PROCESSES IN SILICON." Electrochemical Society Extended Abstracts 84-1 (1984): 60--.
  - Tan, TY. "CHARACTERIZATION OF SEMICONDUCTOR SILICON TRANSMISSION ELECTRON MICROSCOPY." Proceedings of SPIE - The International Society for Optical Engineering 452 (1984): 170-176.
  - Goesele, U, and Tan, TY. "ROLE OF VACANCIES AND SELF-INTERSTITIALS IN DIFFUSION AND AGGLOMERATION PHENOMENA IN SILICON." Proceedings - The Electrochemical Society 83-4 (1983): 17-36.
  - Goesele, U, and Tan, TY. "THERMAL DONOR FORMATION BY THE AGGLOMERATION OF OXYGEN IN SILICON." Materials Research Society Symposia Proceedings 14 (1983): 153-157.
  - Goesele, U, and Tan, TY. "NATURE OF POINT DEFECTS AND THEIR INFLUENCE ON DIFFUSION PROCESSES IN SILICON AT HIGH TEMPERATURES." Materials Research Society Symposia Proceedings 14 (1983): 45-59.
  - Schmid, PE, Ho, PS, Föll, H, and Tan, TY. "Effects of variations of silicide characteristics on the Schottky-barrier height of silicide-silicon interfaces." Physical Review B 28, no. 8 (1983): 4593-4601. Full Text
  - Smith, DA, and Tan, TY. "GRAIN GROWTH AND GRAIN-BOUNDARY DISLOCATIONS IN POLYSILICON." Advances in Ceramics 6 (1983): 184-191.
  - Tan, TY, Gosele, U, and Morehead, FF. "ON THE NATURE OF POINT DEFECTS AND THE EFFECT OF OXIDATION ON SUBSTITUTIONAL DOPANT DIFFUSION IN SILICON." Applied Physics A: Solids and Surfaces A 31, no. 2 (1983): 97-108. (Academic Article)
  - Tan, TY, Gosele, U, and Morehead, FF. "On the nature of point defects and the effect of oxidation on substitutional dopant diffusion in silicon." Appl. Phys. A, Solids Surf. (West Germany) A31, no. 2 (1983): 97-108. (Academic Article)
  - Tan, TY, Gosele, U, and Morehead, FF. "ON THE NATURE OF POINT DEFECTS AND THE EFFECT OF OXIDATION ON SUBSTITUTIONAL DOPANT DIFFUSION IN SILICON." Applied Physics A: Solids and Surfaces A 31, no. 2 (1983): 97-108.
  - Tan, TY, Morehead, F, and Gosele, U. "DETERMINATION OF VACANCY AND SELF-INTERSTITIAL CONTRIBUTIONS TO THE Si SELF-DIFFUSION COEFFICIENT." Electrochemical Society Extended Abstracts 83-1 (1983): 432-433.
  - Tan, TY, Morehead, F, and Gosele, U. "EXAMINATION OF VACANCY AND SELF-INTERSTITIAL CONTRIBUTIONS TO SILICON SELF-DIFFUSION AND SWIRL DEFECT FORMATION." Proceedings - The Electrochemical Society 83-9 (1983): 325-336.
  - Tan, TY, and Ginsberg, BJ. "Observation of oxidation-enhanced and oxidation-retarded diffusion of antimony in silicon." Applied Physics Letters 42, no. 5 (1983): 448-450. Full Text
  - Tan, TY, and Ginsberg, BJ. "OBSERVATION OF OXIDATION-ENHANCED AND -RETARDED DIFFUSION OF ANTIMONY IN SILICON: THE BEHAVIOR OF (111) WAFERS." Materials Research Society Symposia Proceedings 14 (1983): 141-145.
  - Goesele, U, and Tan, TY. "OXYGEN DIFFUSION AND THERMAL DONOR FORMATION IN SILICON." Applied Physics A: Solids and Surfaces A28, no. 2 (1982): 79-92.
  - Gosele, U, and Tan, TY. "Oxygen diffusion and thermal donor formation in silicon." Appl. Phys. A, Solids Surf. (West Germany) A28, no. 2 (1982): 79-92. (Academic Article)
  - Schmid, PE, Ho, PS, and Tan, TY. "Correlation between Schottky barrier height and phase stoichiometry/structure of silicide-silicon interfaces." J. Vac. Sci. Technol. (USA) 20, no. 3 (1982): 688-689. (Academic Article) Full Text Link to Item
  - Smith, DA, and Tan, TY. "EFFECT OF DOPING AND OXIDATION ON GRAIN GROWTH IN POLYSILICON." Materials Research Society Symposia Proceedings 5 (1982): 65-70.
  - Tan, TY, and Goesele, U. "KINETICS OF SILICON STACKING FAULT GROWTH/SHRINKAGE IN AN OXIDIZING AMBIENT CONTAINING A CHLORINE COMPOUND." Journal of Applied Physics 53, no. 7 (1982): 4767-4778. Full Text
  - Tan, TY, and Gösele, U. "Oxidation-enhanced or retarded diffusion and the growth or shrinkage of oxidation-induced stacking faults in silicon." Applied Physics Letters 40, no. 7 (1982): 616-619. Full Text
  - Corbett, JW, Karins, JP, and Tan, TY. "Ion-induced defects in semiconductors." Nuclear Instruments and Methods 182-183, no. PART 1 (1981): 457-476.
  - Foell, H, Tan, TY, and Krakow, W. "UNDISSOCIATED DISLOCATIONS AND INTERMEDIATE DEFECTS IN As** plus ION DAMAGED SILICON." Mat Res Soc Symp Proc 2 (1981): 173-177.
  - Krakow, W, Tan, TY, and Foell, H. "DETECTION OF POINT DEFECT CHAINS IN ION IRRADIATED SILICON BY HIGH RESOLUTION ELECTRON MICROSCOPY." Mat Res Soc Symp Proc (1981): 185-190.
  - Tan, TY, Foell, H, Mader, S, and Krakow, W. "A TENTATIVE IDENTIFICATION OF THE NATURE OF left brace 113 right brace STACKING FAULTS IN Si- MODEL AND EXPERIMENT." Mat Res Soc Symp Proc 2 (1981): 179-184.
  - Tan, TY, Foll, H, and Hu, SM. "On the diamond-cubic to hexagonal phase transformation in silicon." Philos. Mag. A, Phys. Condens. Matter Defects Mech. Prop. (UK) 44, no. 1 (1981): 127-140. (Academic Article)
  - Tan, TY, and Gösele, U. "Growth kinetics of oxidation-induced stacking faults in silicon: A new concept." Applied Physics Letters 39, no. 1 (1981): 86-88. Full Text
  - Tan, TY. "DISLOCATION NUCLEATION MODELS FROM POINT DEFECT CONDENSATIONS IN SILICON AND GERMANIUM." Mat Res Soc Symp Proc 2 (1981): 163-172.
  - Tan, TY. "Atomic modelling of homogeneous nucleation of dislocations from condensation of point defects in silicon." Philos. Mag. A, Phys. Condens. Matter Defects Mech. Prop. (UK) 44, no. 1 (1981): 101-125. (Academic Article)
  - Tice, WK, and Tan, TY. "PRECIPITATION OF OXYGEN AND INTRINSIC GETTERING IN SILICON." Mat Res Soc Symp Proc 2 (1981): 367-380.
  - Corbett, JW, Karins, JP, and Tan, TY. "ION-INDUCED DEFECTS IN SEMICONDUCTORS." Nuclear instruments and methods 182, no. 183/pt 1 (1980): 457-447. Full Text
  - Ho, PS, and Tan, TY. "Submicron mask alignment by coherent light sources." IBM Tech. Discl. Bull. (USA) 23, no. 1 (1980): 360-361. (Academic Article)
  - Rimini, E, Chu, W-K, Baglin, JEE, Tan, TY, and Hodgson, RT. "Laser annealing of silicon implanted with both argon and arsenic." Applied Physics Letters 37, no. 1 (1980): 81-83. Full Text
  - Tan, TY, Föll, H, and Krakow, W. "Detection of extended interstitial chains in ion-damaged silicon." Applied Physics Letters 37, no. 12 (1980): 1102-1104. Full Text
  - Ho, PS, Tan, TY, Lewis, JE, and Rubloff, GW. "CHEMICAL AND STRUCTURAL PROPERTIES OF THE Pd/Si INTERFACE DURING THE INITIAL STAGES OF SILICIDE FORMATION." Journal of vacuum science & technology 16, no. 5 (1979): 1120-1124. Full Text
  - Tan, TY. "Residual stacking-fault-type contrast in silicon after apparent unfaulting reactions." Applied Physics Letters 34, no. 10 (1979): 714-716. Full Text
  - Tsu, R, Hodgson, RT, Tan, TY, and Baglin, JE. "Order-disorder transition in single-crystal silicon induced by pulsed uv laser irradiation." Physical Review Letters 42, no. 20 (1979): 1356-1358. Full Text
  - Goodhew, PJ, Tan, TY, and Balluffi, RW. "Low energy planes for tilt grain boundaries in gold." Acta Metallurgica 26, no. 4 (1978): 557-567.
  - Tan, TY, Gardner, EE, and Tice, WK. "Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si." Applied Physics Letters 30, no. 4 (1977): 175-176. Full Text
  - Tan, TY, and Tice, WK. "Oxygen precipitation and the generation of dislocations in silicon." Philosophical Magazine 34, no. 4 (October 1976): 615-631. Full Text
  - Tan, TY, Hwang, JCM, Goodhew, PJ, and Balluffi, RW. "Preparation and applications of thin film specimens containing grain boundaries of controlled geometry." Thin Solid Films 33, no. 1 (1976): 1-11.
  - Tan, TY, Wu, LL, and Tice, WK. "Nucleation of stacking faults at oxide precipitate-dislocation complexes in silicon." Applied Physics Letters 29, no. 12 (1976): 765-767. Full Text
  - Tice, WK, and Tan, TY. "Nucleation of CuSi precipitate colonies in oxygen-rich silicon." Applied Physics Letters 28, no. 9 (1976): 564-565. Full Text
  - Sass, SL, Tan, TY, and Balluffi, RW. "DETECTION OF THE PERIODIC STRUCTURE OF HIGH-ANGLE TWIST BOUNDARIES - 1. ELECTRON DIFFRACTION STUDY." Philos Mag 31, no. 3 (1975): 559-573.
  - Tan, TY, Sass, SL, and Balluffi, RW. "DETECTION OF THE PERIODIC STRUCTURE OF HIGH-ANGLE TWIST BOUNDARIES - 2. HIGH RESOLUTION ELECTRON MICROSCOPY STUDY." Philos Mag 31, no. 3 (1975): 575-585.
  - Wagner, W, Tan, TY, and Balluffi, RW. "FACETING OF HIGH-ANGLE GRAIN BOUNDARIES IN THE COINCIDENCE LATTICE." Phil Mag 29, no. 4 (1974): 895-904.
  - Balluffi, RW, and Tan, TY. "Comments on the range of applicability of the grain boundary (secondary) dislocation model to high angle grain boundaries." Scripta Metallurgica 6, no. 11 (1972): 1033-1040.
  - Tan, TY, Bell, WL, and Thomas, G. "Crystal thickness dependence of Kikuchi line spacing." Philos. Mag. (UK) 24, no. 188 (1971): 417-424. (Academic Article)
  - Schwarz, SE, and Tan, TY. "Wave interactions in saturable absorbers." Applied Physics Letters 10, no. 1 (1967): 4-7. Full Text
  - Tan, , Y, T, Nunn, , M, W, and Jr, . "Azimuthally periodic electrostatically focused electron ribbon beams." IEEE Transactions on Electron Devices ED-13, no. 10 (1966): 706-713. (Academic Article)
  - Nunn, , M, W, Jr, , Tan, , and Y, T. "Electrostatically-focused ribbon beams employing periodic-cylindrical electron lenses." IEEE Transactions on Electron Devices ED-11, no. 11 (1964): 524-525. (Academic Article)
  - Geipel, HJ, Shasteen, RB, Tan, TY, and Tice, WK. "Control of stacking fault generation in recessed oxide processing." IBM Tech. Discl. Bull. (USA) 21, no. 4: 1373-. (Academic Article)

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