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Teh Yu Tan

Professor Emeritus in the Department of Mechanical Engineering and Materials Science
Thomas Lord Department of Mechanical Engineering and Materials Science
Box 90300, Durham, NC 27708-0300
186 Engineering Bldg, Durham, NC 27708

Overview


Professor Tan is conducting fundamental research in materials science and processes related to electronic materials. He and his colleagues have originated the study of the subject of intrinsic gettering which is now widely used to improve yield in integrated circuit fabrications using Czochralski silicon. Primarily because of this work, the semiconductor industry granted him the SEMMY Award in the materials category in 1987. SEMMY is one of the highest awards the industry gives.

He has also studied the basic aspects of the following topics in silicon: precipitation, kinetic process of defect evolution, impurity diffusion mechanisms and point defects. These studies have led to greater understanding of the structure and properties of defects in silicon. Since 1986, his research interests have also included III-V compound semiconducting materials. He is a recipient of the 1994 Alexander Von Humboldt Prize.

Current Appointments & Affiliations


Professor Emeritus in the Department of Mechanical Engineering and Materials Science · 2016 - Present Thomas Lord Department of Mechanical Engineering and Materials Science, Pratt School of Engineering

Recent Publications


Point Defects and Diffusion in Semiconductors

Chapter · April 10, 2017 Solid state electronic products have become an integral part of modern day life. Integrated circuit chips fabricated using Si as the substrate material are widely used in computers, communication devices such as smart phones, and entertaining machines, as ... Full text Cite

Dissolution of Oxygen Precipitate Nuclei in n-Type CZ-Si Wafers to Improve Their Material Quality: Experimental Results

Journal Article IEEE Journal of Photovoltaics · January 1, 2017 We present experimental results which show that oxygen-related precipitate nuclei (OPN) present in p-doped, n-Type, Czochralski wafers can be dissolved using a flash-Annealing process, yielding very high quality wafers for high-efficiency solar cells. Flas ... Full text Cite

Notice of Removal: Dissolution of oxygen precipitate nuclei in N-type CZ Si wafers to improve their material quality: Experimental results

Conference 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 · January 1, 2017 We present experimental results that show oxygen related precipitate nuclei (OPN) present in P-doped, N type, CZ wafers can be dissolved using a Flash Annealing process yielding very high quality wafers for high efficiency solar cells. Flash annealing cons ... Full text Cite
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Recent Grants


High Sensitivity Low Cost Solid State Neutron Detection

ResearchCo Investigator · Awarded by US Department of Homeland Security · 2014 - 2019

Investigation of Superlattice Disordering and Diffusion Mechanics in GaAs

ResearchPrincipal Investigator · Awarded by Army Research Office · 1989 - 1993

Investigation of Superlattice Disordering and Diffusion Mechanisms in GaAs

ResearchPrincipal Investigator · Awarded by Army Research Office · 1989 - 1991

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Education, Training & Certifications


University of California, Berkeley · 1971 Ph.D.
Tulane University · 1965 M.S.
National Taiwan University (Taiwan) · 1962 B.S.