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Optical and material characteristics of InAs/GaAs quantum dots

Publication ,  Journal Article
Huang, S; Huang, PF; Feng, ZC; Brown, A; Lu, W
Published in: Proceedings of SPIE - The International Society for Optical Engineering
November 21, 2008

A series of self-organized InAs/GaAs quantum dots with spacer layer under different thermal-treat (annealing) temperature and environments were prepared by molecular beam epitaxy. They were investigated by atomic force microscope and temperature-dependent photoluminescence (PL). Results showed that the sample annealed at lower temperature has lager size quantum dots and smaller density of quantum dots. The size of quantum dots is getting smaller and the density of quantum dots is getting larger as the annealing temperature increase. Two broad PL peaks are attributed to the combined size distribution of the bimodal quantum dots.

Duke Scholars

Published In

Proceedings of SPIE - The International Society for Optical Engineering

DOI

ISSN

0277-786X

Publication Date

November 21, 2008

Volume

7039

Related Subject Headings

  • 5102 Atomic, molecular and optical physics
  • 4009 Electronics, sensors and digital hardware
  • 4006 Communications engineering
 

Citation

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Huang, S., Huang, P. F., Feng, Z. C., Brown, A., & Lu, W. (2008). Optical and material characteristics of InAs/GaAs quantum dots. Proceedings of SPIE - The International Society for Optical Engineering, 7039. https://doi.org/10.1117/12.795580
Huang, S., P. F. Huang, Z. C. Feng, A. Brown, and W. Lu. “Optical and material characteristics of InAs/GaAs quantum dots.” Proceedings of SPIE - The International Society for Optical Engineering 7039 (November 21, 2008). https://doi.org/10.1117/12.795580.
Huang S, Huang PF, Feng ZC, Brown A, Lu W. Optical and material characteristics of InAs/GaAs quantum dots. Proceedings of SPIE - The International Society for Optical Engineering. 2008 Nov 21;7039.
Huang, S., et al. “Optical and material characteristics of InAs/GaAs quantum dots.” Proceedings of SPIE - The International Society for Optical Engineering, vol. 7039, Nov. 2008. Scopus, doi:10.1117/12.795580.
Huang S, Huang PF, Feng ZC, Brown A, Lu W. Optical and material characteristics of InAs/GaAs quantum dots. Proceedings of SPIE - The International Society for Optical Engineering. 2008 Nov 21;7039.

Published In

Proceedings of SPIE - The International Society for Optical Engineering

DOI

ISSN

0277-786X

Publication Date

November 21, 2008

Volume

7039

Related Subject Headings

  • 5102 Atomic, molecular and optical physics
  • 4009 Electronics, sensors and digital hardware
  • 4006 Communications engineering