April S. Brown | Scholars@Duke

April S. Brown
John Cocke Professor of Electrical and Computer Engineering in the Edmund T. Pratt , Jr. School of Engineering

Dr. April Brown recieved her B.S.E.E. from North Carolina State University in 1981, her M.S.E.E. and Ph.D. from Cornell University in 1984 and 1985, respectively. She worked at the Hughes Research Laboratories (now HRL LLC) in Malibu, Ca. from 1986-1993, and spent one year at the Army Research Office in the Physics Division (1988). She joined the Georgia Insitutute of Technology in 1994 as an Associate Professor and was promoted to Professor in 1999. She was Associate Dean in the College of Engineering from 1999-2001 and Executive Assistant to the President from 2001-2002. In addition, she was named Pettit Professor in Microelectronics in 2001. She joined Duke University as Professor and Chair in July 2002. She is currently Sr. Associate Dean for Research in the Pratt School of Engineering at Duke

Current Appointments & Affiliations

John Cocke Professor of Electrical and Computer Engineering in the Edmund T. Pratt , Jr. School of Engineering, Electrical and Computer Engineering, Pratt School of Engineering 2008
Professor of Electrical and Computer Engineering, Electrical and Computer Engineering, Pratt School of Engineering 2002

Contact Information

3573 CIEMAS, Box 90291, Durham, NC 27708
Box 90291, Durham, NC 27708-0291
abrown@ee.duke.edu (919) 660-5442

Background
Education, Training, & Certifications
- Ph.D., Cornell University 1985
Duke Appointment History
- Chair, Electrical and Computer Engineering, Pratt School of Engineering 2002 - 2007
Recognition
In the News
- AUG 4, 2016
  
  Perpetual 'Ice Water': Stable Solid-Liquid State Revealed in Nanoparticles
- JAN 20, 2015
  
  Pratt's April Brown to Lead U.S. Army in Engineering Science Research
Awards & Honors
Research
Selected Grants
- CEMRI: On Structured Interfaces awarded by University of Wisconsin 2011 - 2017
- GOALI: Realizing the Promise of III-N-Epitaxy Enabled by III-N Substates awarded by National Science Foundation 2012 - 2015
- Grant Expansion: Semiconductor Surface Modifications for Critical DoD Device Applications awarded by Office of Naval Research 2008 - 2013
- EAGER: A New Approach to Synthesizing Inorganic-Organic Interfaces awarded by National Science Foundation 2012 - 2013
- Synthesis of In-containing III-N Compounds by Molecular Beam Epitaxy awarded by Office of Naval Research 2008 - 2011
- Pilot Study Graduate Student Career Perceptions and Decisions awarded by National Science Foundation 2009 - 2010
- ADVANCE: Target of Opportunity Strategy awarded by National Science Foundation 2006 - 2010
- The Summit of NAE Grand Challenges awarded by Air Force Office of Scientific Research 2009 - 2010
- Sensor Material Design by Application Driven Optimization awarded by Army Research Office 2007 - 2010
- Grand Challenge Summit awarded by Army Research Office 2009
- NIRT: Highly Integrated Optical Nanoparticle-Based Sensing Systems awarded by National Science Foundation 2004 - 2009
- Theme-based Redesign of the Duke ECE Undergraduate Curriculum at Duke University awarded by National Science Foundation 2004 - 2008
- Fundamental Studies of GaN HFET Synthesis on SiC awarded by Office of Naval Research 2005 - 2008
- In Vacuo X-Ray and Ultraviolet Photoelectron Spectroscopy Analytical System awarded by Army Research Office 2007 - 2008
- Duke Robotics Autonomous Wall-Climbing Robot awarded by Lord Foundation of North Carolina 2004 - 2006
- EGR 20 Engineering Innovation awarded by Lord Foundation of North Carolina 2004 - 2006
- Molecular Beam Epitaxy of GaN on SiC awarded by Office of Naval Research 2003 - 2005
- Duke Robotics Tandem Vectored-Thruster Design for an Autonomous Underwater Vehicle awarded by Lord Foundation of North Carolina 2003 - 2005
- Fabrication, Ultrafast Measurement, and Modeling of Optoelectronic Nanostructures awarded by Lord Foundation of North Carolina 2003 - 2005
- Initiating an Embedded Systems Design Laboratory awarded by Lord Foundation of North Carolina 2003 - 2005
- Integrated Blood Chemistry Lab-On-A-Chip awarded by Lord Foundation of North Carolina 2003 - 2005
- DURIP Equipment Request: A Streak Camera for Time-Resolved Photoluminescence Characterization of Wide Bandgap awarded by Air Force Office of Scientific Research 2003 - 2004
Publications & Artistic Works
Selected Publications
- Academic Articles
  - Aprile, E, Aalbers, J, Agostini, F, Alfonsi, M, Amaro, FD, Anthony, M, Arneodo, F, Barrow, P, Baudis, L, Bauermeister, B, Benabderrahmane, ML, Berger, T, Breur, PA, Brown, A, Brown, E, Bruenner, S, Bruno, G, Budnik, R, Bütikofer, L, Calvén, J, Cardoso, JMR, Cervantes, M, Cichon, D, Coderre, D, Colijn, AP, Conrad, J, Cussonneau, JP, Decowski, MP, De Perio, P, Di Gangi, P, Di Giovanni, A, Diglio, S, Eurin, G, Fei, J, Ferella, AD, Fieguth, A, Fulgione, W, Gallo Rosso, A, Galloway, M, Gao, F, Garbini, M, Geis, C, Goetzke, LW, Grandi, L, Greene, Z, Grignon, C, Hasterok, C, Hogenbirk, E, Howlett, J, Itay, R, Kaminsky, B, Kazama, S, Kessler, G, Kish, A, Landsman, H, Lang, RF, Lellouch, D, Levinson, L, Lin, Q, Lindemann, S, Lindner, M, Lombardi, F, Lopes, JAM, Mahlstedt, J, Manfredini, A, Maris, I, Marrodán Undagoitia, T, Masbou, J, Massoli, FV, Masson, D, Mayani, D, Messina, M, Micheneau, K, Molinario, A, Morå, K, Murra, M, Naganoma, J, Ni, K, Oberlack, U, Pakarha, P, Pelssers, B, Persiani, R, Piastra, F, Pienaar, J, Pizzella, V, Piro, MC, Plante, G, Priel, N, Ramírez García, D, and Rauch, L. "Signal yields of keV electronic recoils and their discrimination from nuclear recoils in liquid xenon." Physical Review D 97, no. 9 (May 1, 2018). Full Text
  - Collar, KN, Li, J, Jiao, W, Kong, W, and Brown, AS. "Unidirectional lateral nanowire formation during the epitaxial growth of GaAsBi on vicinal substrates." Nanotechnology 29, no. 3 (January 2018): 035604-null. Full Text
  - Collar, K, Li, J, Jiao, W, Guan, Y, Losurdo, M, Humlicek, J, and Brown, AS. "Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy." Aip Advances 7, no. 7 (July 2017): 075016-075016. Full Text
  - Kong, W, Roberts, AT, Jiao, WY, Fournelle, J, Kim, TH, Losurdo, M, Everitt, HO, and Brown, AS. "UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy." Aip Advances 7, no. 3 (March 1, 2017). Full Text
  - Losurdo, M, Suvorova, A, Rubanov, S, Hingerl, K, and Brown, AS. "Thermally stable coexistence of liquid and solid phases in gallium nanoparticles." Nature Materials 15, no. 9 (September 2016): 995-1002. Full Text
  - Jiao, W, Kong, W, Li, J, Collar, K, Kim, TH, Losurdo, M, and Brown, AS. "The characteristics of MBE-grown InxAl1-xN/GaN surface states." Applied Physics Letters 109, no. 8 (August 22, 2016). Full Text
  - Li, J, Collar, K, Jiao, W, Kong, W, Kuech, TF, Babcock, SE, and Brown, A. "Impact of vicinal GaAs(001) substrates on Bi incorporation and photoluminescence in molecular beam epitaxy-grown GaAs1−xBix." Applied Physics Letters 108, no. 23 (June 6, 2016): 232102-232102. Full Text
  - Jiao, W, Kong, W, Li, J, Collar, K, Kim, TH, Losurdo, M, and Brown, AS. "Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying in composition." Aip Advances 6, no. 3 (March 1, 2016). Full Text
  - Wood, AW, Collar, K, Li, J, Brown, AS, and Babcock, SE. "Droplet-mediated formation of embedded GaAs nanowires in MBE GaAs(1-x)Bi(x) films." Nanotechnology 27, no. 11 (March 2016): 115704-. Full Text
  - Kong, W, Jiao, W, Li, J, Collar, K, Leach, J, Fournelle, J, Kim, T, and Brown, A. "Structural Characterization of the Nanocolumnar Microstructure of InAlN." Journal of Electronic Materials 45, no. 1 (January 2016): 654-660. Full Text
  - Kong, W, Roberts, AT, Jiao, WY, Fournelle, J, Kim, TH, Losurdo, M, Everitt, HO, and Brown, AS. "Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy." Applied Physics Letters 107, no. 13 (September 28, 2015). Full Text
  - Brown, AS, and Ptak, AJ. "Preface of the 18th International Conference on Molecular Beam Epitaxy (MBE 2014)." Journal of Crystal Growth 425 (September 2015): 1-1. Full Text
  - Giangregorio, MM, Jiao, W, Bianco, GV, Capezzuto, P, Brown, AS, Bruno, G, and Losurdo, M. "Insights into the effects of metal nanostructuring and oxidation on the work function and charge transfer of metal/graphene hybrids." Nanoscale 7, no. 30 (August 2015): 12868-12877. Full Text
  - Kong, W, Jiao, WY, Li, JC, Collar, K, Kim, TH, Leach, JH, and Brown, AS. "Effect of strain in sputtered AlN buffer layers on the growth of GaN by molecular beam epitaxy." Applied Physics Letters 107, no. 3 (July 20, 2015). Full Text
  - Luo, G, Yang, S, Li, J, Arjmand, M, Szlufarska, I, Brown, AS, Kuech, TF, and Morgan, D. "First-principles studies on molecular beam epitaxy growth of GaA s1-x B ix." Physical Review B Condensed Matter and Materials Physics 92, no. 3 (July 14, 2015). Full Text
  - Li, J, Forghani, K, Guan, Y, Jiao, W, Kong, W, Collar, K, Kim, TH, Kuech, TF, and Brown, AS. "GaAs1-yBiy Raman signatures: Illuminating relationships between the electrical and optical properties of GaAs1-yBiy and Bi incorporation." Aip Advances 5, no. 6 (June 1, 2015). Full Text
  - Wood, AW, Babcock, SE, Li, J, and Brown, AS. "Increased bismuth concentration in MBE GaAs1-xBix films by oscillating III/V flux ratio during growth." Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 33, no. 3 (May 1, 2015). Full Text
  - Knight, MW, Coenen, T, Yang, Y, Brenny, BJM, Losurdo, M, Brown, AS, Everitt, HO, and Polman, A. "Gallium plasmonics: deep subwavelength spectroscopic imaging of single and interacting gallium nanoparticles." Acs Nano 9, no. 2 (February 6, 2015): 2049-2060. Full Text Open Access Copy
  - Kong, W, Mohanta, A, Roberts, AT, Jiao, WY, Fournelle, J, Kim, TH, Losurdo, M, Everitt, HO, and Brown, AS. "Room temperature photoluminescence from InxAl(1-x)N films deposited by plasma-assisted molecular beam epitaxy." Applied Physics Letters 105, no. 13 (September 29, 2014). Full Text Open Access Copy
  - Forghani, K, Guan, Y, Losurdo, M, Luo, G, Morgan, D, Babcock, SE, Brown, AS, Mawst, LJ, and Kuech, TF. "GaAs1-y-zPyBiz, an alternative reduced band gap alloy system lattice-matched to GaAs." Applied Physics Letters 105, no. 11 (September 15, 2014). Full Text
  - Kim, T-H, Forghani, K, Collar, K, Kuech, TF, and Brown, AS. "Growth of GaAs1−xBix by molecular beam epitaxy: Trade-offs in optical and structural characteristics." Journal of Applied Physics 116, no. 4 (July 28, 2014): 043524-043524. Full Text
  - Yang, Y, Akozbek, N, Kim, TH, Sanz, JM, Moreno, F, Losurdo, M, Brown, AS, and Everitt, HO. "Ultraviolet-Visible Plasmonic Properties of Gallium Nanoparticles Investigated by Variable-Angle Spectroscopic and Mueller Matrix Ellipsometry." Acs Photonics 1, no. 7 (July 16, 2014): 582-589. Full Text Open Access Copy
  - Ahmed, MU, Saaem, I, Wu, PC, and Brown, AS. "Personalized diagnostics and biosensors: a review of the biology and technology needed for personalized medicine." Critical Reviews in Biotechnology 34, no. 2 (June 2014): 180-196. (Review) Full Text
  - Losurdo, M, Bergmair, I, Dastmalchi, B, Kim, TH, Giangregroio, MM, Jiao, W, Bianco, GV, Brown, AS, Hingerl, K, and Bruno, G. "Graphene as an electron shuttle for silver deoxidation: Removing a key barrier to plasmonics and metamaterials for sers in the visible." Advanced Functional Materials 24, no. 13 (April 2, 2014): 1864-1878. Full Text
  - Losurdo, M, Yi, C, Suvorova, A, Rubanov, S, Kim, T-H, Giangregorio, MM, Jiao, W, Bergmair, I, Bruno, G, and Brown, AS. "Demonstrating the capability of the high-performance plasmonic gallium-graphene couple." Acs Nano 8, no. 3 (March 4, 2014): 3031-3041. Full Text
  - Zhong, M, Roberts, J, Kong, W, Brown, AS, and Steckl, AJ. "p-type GaN grown by phase shift epitaxy." Applied Physics Letters 104, no. 1 (January 6, 2014): 012108-012108. Full Text
  - Sanz, JM, Ortiz, D, Alcaraz de la Osa, R, Saiz, JM, González, F, Brown, AS, Losurdo, M, Everitt, HO, and Moreno, F. "Metals for UV plasmonics." Optics Infobase Conference Papers (January 1, 2014).
  - Collar, K, Kim, T-H, and Brown, AS. "The relationship between depth-resolved composition and strain relaxation in InAlN and InGaN films grown by molecular beam epitaxy." Applied Physics Letters 103, no. 16 (October 14, 2013): 162102-162102. Full Text
  - Sanz, JM, Ortiz, D, Alcaraz De La Osa, R, Saiz, JM, González, F, Brown, AS, Losurdo, M, Everitt, HO, and Moreno, F. "UV plasmonic behavior of various metal nanoparticles in the near- and far-field regimes: Geometry and substrate effects." Journal of Physical Chemistry C 117, no. 38 (September 26, 2013): 19606-19615. Full Text
  - Yang, Y, Callahan, JM, Kim, T-H, Brown, AS, and Everitt, HO. "Ultraviolet nanoplasmonics: a demonstration of surface-enhanced Raman spectroscopy, fluorescence, and photodegradation using gallium nanoparticles." Nano Letters 13, no. 6 (June 2013): 2837-2841. Full Text
  - Ahmed, MU, Brown, AS, and Wu, PC. "Point-of-Care Devices." (2013): 372-380. Full Text
  - Kuech, TF, Mawst, LJ, and Brown, AS. "Mixed Semiconductor Alloys for Optical Devices." ANNUAL REVIEW OF CHEMICAL AND BIOMOLECULAR ENGINEERING, VOL 4 4 (2013): 187-209. Full Text Link to Item
  - Losurdo, M, Bergmair, I, Dastmalchi, B, Kim, T-H, Giangregroio, MM, Jiao, W, Bianco, GV, Brown, AS, Hingerl, K, and Bruno, G. "Graphene as an Electron Shuttle for Silver Deoxidation: Removing a Key Barrier to Plasmonics and Metamaterials for SERS in the Visible." Advanced Functional Materials (2013).
  - Li, B, Yi, C, Brown, A, Fischer, MC, and Warren, WS. "Homodyne near-degenerate four-wave-mixing microscopy for graphene imaging and biomedical applications." 2012 Conference on Lasers and Electro Optics, Cleo 2012 (December 6, 2012).
  - "Homodyne near-degenerate four-wave-mixing microscopy for graphene imaging and biomedical applications." Cleo: Science and Innovations, Cleo Si 2012 (December 1, 2012).
  - Li, B, Cheng, Y, Liu, J, Yi, C, Brown, AS, Yuan, H, Vo-Dinh, T, Fischer, MC, and Warren, WS. "Direct optical imaging of graphene in vitro by nonlinear femtosecond laser spectral reshaping." Nano Letters 12, no. 11 (November 2012): 5936-5940. Full Text
  - Yi, C, Kim, T-H, Jiao, W, Yang, Y, Lazarides, A, Hingerl, K, Bruno, G, Brown, A, and Losurdo, M. "Evidence of plasmonic coupling in gallium nanoparticles/graphene/SiC." Small 8, no. 17 (September 10, 2012): 2721-2730. Full Text Link to Item
  - Cho, E, Brown, A, and Kuech, TF. "Chemical characterization of DNA-immobilized InAs surfaces using X-ray photoelectron spectroscopy and near-edge X-ray absorption fine structure." Langmuir : the Acs Journal of Surfaces and Colloids 28, no. 32 (August 2012): 11890-11898. Full Text
  - Bianco, GV, Giangregorio, MM, Capezzuto, P, Losurdo, M, Kim, TH, Brown, AS, and Bruno, G. "Plasma-plasmonics synergy in the Ga-catalyzed growth of Si-nanowires." Materials Science and Engineering B: Solid State Materials for Advanced Technology 177, no. 10 (June 5, 2012): 700-704. Full Text
  - Kim, TH, Losurdo, M, Choi, S, Yoon, I, Bruno, G, and Brown, A. "Real-time studies of In-adlayer during PAMBE of InGaN/GaN MQWs." Physica Status Solidi (C) Current Topics in Solid State Physics 9, no. 3-4 (March 1, 2012): 1036-1039. Full Text
  - Losurdo, M, Wu, PC, Kim, T-H, Bruno, G, and Brown, AS. "Cysteamine-based functionalization of InAs surfaces: revealing the critical role of oxide interactions in biasing attachment." Langmuir 28, no. 2 (January 17, 2012): 1235-1245. Full Text Link to Item
  - Dedigama, A, Angelo, M, Torrione, P, Kim, TH, Wolter, S, Lampert, W, Atewologun, A, Edirisoorya, M, Collins, L, Kuech, TF, Losurdo, M, Bruno, G, and Brown, A. "Hemin-functionalized InAs-based high sensitivity room temperature NO gas sensors." Journal of Physical Chemistry C 116, no. 1 (January 12, 2012): 826-833. Full Text
  - McKay, KS, Lu, FP, Kim, J, Yi, C, Brown, AS, and Hawkins, AR. "Erratum: Band discontinuity measurements of the wafer bonded InGaAs/Si heterojunction (Applied Physics Letters (2007) 90 (222111))." Applied Physics Letters 100, no. 12 (2012). Full Text
  - Albella, P, Garcia-Cueto, B, González, F, Moreno, F, Wu, PC, Kim, T-H, Brown, A, Yang, Y, Everitt, HO, and Videen, G. "Shape matters: plasmonic nanoparticle shape enhances interaction with dielectric substrate." Nano Letters 11, no. 9 (September 2011): 3531-3537. Full Text
  - Wu, PC, Losurdo, M, Kim, TH, Garcia-Cueto, B, Moreno, F, Bruno, G, and Brown, AS. "Ga-Mg Core-shell nanosystem for a novel full color plasmonics." Journal of Physical Chemistry C 115, no. 28 (July 21, 2011): 13571-13576. Full Text
  - Ruffin, PB, Brantley, CL, Edwards, E, Roberts, JK, Chew, W, Warren, LC, Ashley, PR, Everitt, HO, Webster, E, Foreman, JV, Sanghadasa, M, Crutcher, SH, Temmen, MG, Varadan, V, Hayduke, D, Wu, PC, Khoury, CG, Yang, Y, Kim, TH, Vo-Dinh, T, Brown, AS, and Callahan, J. "Nanotechnology research and development for military and industrial applications." Proceedings of Spie the International Society for Optical Engineering 7980 (May 23, 2011). Full Text
  - Wu, PC, Kim, T-H, Suvorova, A, Giangregorio, M, Saunders, M, Bruno, G, Brown, AS, and Losurdo, M. "GaMg alloy nanoparticles for broadly tunable plasmonics." Small (Weinheim an Der Bergstrasse, Germany) 7, no. 6 (March 2011): 751-756. Full Text
  - Cho, E, Wu, P, Ahmed, M, Brown, A, and Kuech, TF. "Characterization of immobilized DNA on sulfur-passivated InAs surfaces." Mrs Proceedings 1301 (January 2011). Full Text
  - Bruno, G, Losurdo, M, Kim, TH, and Brown, A. "Adsorption and desorption kinetics of Ga on GaN(0001): Application of Wolkenstein theory." Physical Review B Condensed Matter and Materials Physics 82, no. 7 (August 26, 2010). Full Text Open Access Copy
  - Wu, PC, Khoury, CG, Kim, T-H, Yang, Y, Losurdo, M, Bianco, GV, Vo-Dinh, T, Brown, AS, and Everitt, HO. "Demonstration of surface-enhanced Raman scattering by tunable, plasmonic gallium nanoparticles." Journal of the American Chemical Society 131, no. 34 (September 2009): 12032-12033. Full Text
  - Di Franco, C, Elia, A, Spagnolo, V, Scamarcio, G, Lugarà, PM, Ieva, E, Cioffi, N, Torsi, L, Bruno, G, Losurdo, M, Garcia, MA, Wolter, SD, Brown, A, and Ricco, M. "Optical and electronic NOx sensors for applications in mechatronics." Sensors 9, no. 5 (April 27, 2009): 3337-3356. (Review) Full Text
  - Choi, S, Kim, T-H, Wu, P, Brown, A, Everitt, HO, Losurdo, M, and Bruno, G. "Band bending and adsorption/desorption kinetics on N-polar GaN surfaces." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27, no. 1 (2009): 107-107. Full Text
  - Losurdo, M, Giangregorio, MM, Lisco, F, Capezzuto, P, Bruno, G, Wolter, SD, Angelo, M, and Brown, A. "InAs(100) Surfaces Cleaning by an As-Free Low-Temperature 100°C Treatment." Journal of the Electrochemical Society 156, no. 4 (2009): H263-H263. Full Text
  - Wu, PC, Losurdo, M, Kim, TH, Giangregorio, M, Bruno, G, Everitt, HO, and Brown, AS. "Plasmonic Gallium Nanoparticles on Polar Semiconductors: Interplay between Nanoparticle Wetting, Localized Surface Plasmon Dynamics, and Interface Charge." Langmuir 25, no. 2 (January 2009): 924-930. (Academic Article)
  - Huang, S, Huang, P-F, Feng, ZC, Brown, A, and Lu, W. "Optical and material characteristics of InAs/GaAs quantum dots." Nanoengineering: Fabrication, Properties, Optics, and Devices V (August 28, 2008). Full Text
  - Garcia, MA, Losurdo, M, Wolter, SD, Lampert, WV, Bonaventura, J, Bruno, G, Yi, C, and Brown, AS. "Comparison of functionalized III-V semiconductor response for nitric oxide." Sensor Letters 6, no. 4 (August 1, 2008): 627-634. Full Text
  - Choi, S, Kim, TH, Wolter, S, Brown, A, Everitt, HO, Losurdo, M, and Bruno, G. "Indium adlayer kinetics on the gallium nitride (0001) surface: Monitoring indium segregation and precursor-mediated adsorption." Physical Review B Condensed Matter and Materials Physics 77, no. 11 (March 20, 2008). Full Text
  - Pettinari, G, Masia, F, Capizzi, M, Polimeni, A, Losurdo, M, Bruno, G, Kim, TH, Choi, S, Brown, A, Lebedev, V, Cimalla, V, and Ambacher, O. "Experimental evidence of different hydrogen donors in n -type InN." Physical Review B Condensed Matter and Materials Physics 77, no. 12 (March 11, 2008). Full Text
  - Losurdo, M, Wolter, SD, Giangregorio, MM, Lisco, F, Angelo, M, Lampert, WV, Bruno, G, and Brown, A. "Interplay between surface chemistry and optical behavior of semiconductor-biomolecule functionalized sensing systems: An optical investigation by spectroscopic ellipsometry." Materials Research Society Symposium Proceedings 1133 (2008): 19-24.
  - Wu, PC, Losurdo, M, Kim, TH, Bruno, G, Brown, AS, and Everitt, HO. "Novel, real-time measurement of plasmon resonance - tailoring nanoparticle geometry optically." Optics Infobase Conference Papers (January 1, 2008).
  - Wu, PC, Losurdo, M, Kim, TH, Bruno, G, Brown, AS, and Everitt, HO. "Novel, real-time measurement of plasmon resonance - tailoring nanoparticle geometry optically." Optics Infobase Conference Papers (January 1, 2008).
  - Wu, B, Wheeler, D, Yi, C, Yoon, I, Jha, S, Brown, A, Kuech, T, Fay, P, and Seabaugh, A. "InAs growth on submicron (100) SOI islands for InAs-Si composite channel MOSFETs." 2007 International Semiconductor Device Research Symposium, Isdrs (December 1, 2007). Full Text
  - Losurdo, M, Giangregorio, MM, Bruno, G, Kim, TH, Choi, S, Brown, AS, Pettinari, G, Capizzi, M, and Polimeni, A. "Behavior of hydrogen in InN investigated in real time exploiting spectroscopic ellipsometry." Applied Physics Letters 91, no. 8 (August 31, 2007). Full Text
  - Garcia, MA, Losurdo, M, Wolter, SD, Kim, TH, Lampert, WV, Bonaventura, J, Bruno, G, Giangregorio, M, and Brown, A. "Functionalization and characterization of InAs and InP surfaces with hemin." Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 25, no. 4 (August 7, 2007): 1504-1510. Full Text
  - Choi, S, Kim, TH, Everitt, HO, Brown, A, Losurdo, M, Bruno, G, and Moto, A. "Kinetics of gallium adlayer adsorption/desorption on polar and nonpolar GaN surfaces." Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 25, no. 3 (June 11, 2007): 969-973. Full Text
  - Losurdo, M, Kim, TH, Choi, S, Wu, P, Giangregorio, MM, Bruno, G, and Brown, A. "Real time optical monitoring of molecular beam epitaxy of InN on SiC substrates." Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 25, no. 3 (June 11, 2007): 1014-1018. Full Text
  - Wu, PC, Losurdo, M, Kim, TH, Choi, S, Bruno, G, and Brown, AS. "In situ spectroscopic ellipsometry to monitor surface plasmon resonant group-III metals deposited by molecular beam epitaxy." Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 25, no. 3 (June 11, 2007): 1019-1023. Full Text
  - Yoon, I, Yi, C, Kim, T, Brown, AS, and Seabaugh, A. "Effect of surface pretreatment and substrate orientation on the characteristics of InAs quantum dots on Si and Si O2 substrates." Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 25, no. 3 (June 11, 2007): 945-947. Full Text
  - Zhang, W, Yi, C, and Brown, A. "Impact of arsenic species (As2 As4) on the relaxation and morphology of step-graded in Asx P1-x on InP substrates." Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 25, no. 3 (June 11, 2007): 960-963. Full Text
  - Wu, PC, Kim, TH, Brown, AS, Losurdo, M, Bruno, G, and Everitt, HO. "Real-time plasmon resonance tuning of liquid Ga nanoparticles by in situ spectroscopic ellipsometry." Applied Physics Letters 90, no. 10 (March 16, 2007). Full Text
  - Uhlrich, J, Garcia, M, Wolter, S, Brown, AS, and Kuech, TF. "Interfacial chemistry and energy band line-up of pentacene with the GaN (0 0 0 1) surface." Journal of Crystal Growth 300, no. 1 (March 1, 2007): 204-211. Full Text
  - Losurdo, M, Giangregorio, MM, Bruno, G, Kim, TH, Wu, P, Choi, S, Brown, A, Masia, F, Capizzi, M, and Polimeni, A. "Characteristics of InN grown on SiC under the In-rich regime by molecular beam heteroepitaxy." Applied Physics Letters 90, no. 1 (January 15, 2007). Full Text
  - Huettel, LG, Brown, AS, Coonley, KD, Gustafson, MR, Kim, J, Ybarra, GA, and Collins, LM. "Fundamentals of ECE: A rigorous, integrated introduction to electrical and computer engineering." Ieee Transactions on Education 50, no. 3 (2007): 174-181. Full Text
  - McKay, KS, Lu, FP, Kim, J, Yi, C, Brown, AS, and Hawkins, AR. "Band discontinuity measurements of the wafer bonded InGaAsSi heterojunction." Applied Physics Letters 90, no. 22 (2007). Full Text
  - Choi, S, Kim, TH, Brown, A, Everitt, HO, Losurdo, M, Bruno, G, and Moto, A. "Kinetics of gallium adsorption and desorption on (0001) gallium nitride surfaces." Applied Physics Letters 89, no. 18 (November 13, 2006). Full Text
  - Bruno, G, Losurdo, M, Giangregorio, MM, Capezzuto, P, Brown, AS, Kim, TH, and Choi, S. "Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN." Applied Surface Science 253, no. 1 SPEC. ISS. (October 31, 2006): 219-223. Full Text
  - Morse, M, Wu, P, Choi, S, Kim, TH, Brown, AS, Losurdo, M, and Bruno, G. "Structural and optical characterization of GaN heteroepitaxial films on SiC substrates." Applied Surface Science 253, no. 1 SPEC. ISS. (October 31, 2006): 232-235. Full Text
  - Bruno, G, Losurdo, M, Giangregorio, MM, Capezzuto, P, Brown, AS, Kim, TH, and Choi, S. "Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN." Applied Surface Science 253, no. 1 (October 2006): 219-223. (Academic Article)
  - Morse, M, Wu, P, Choi, S, Kim, TH, Brown, AS, Losurdo, M, and Bruno, G. "Structural and optical characterization of GaN heteroepitaxial films on SiC substrates." Applied Surface Science 253, no. 1 (October 2006): 232-235. (Academic Article)
  - Brown, AS, Kim, TH, Choi, S, Wu, P, Morse, M, Losurdo, M, Giangregorio, MM, Bruno, G, and Moto, A. "Growth of InN on 6H-SiC by plasma assisted molecular beam epitaxy." Physica Status Solidi (C) Current Topics in Solid State Physics 3 (July 31, 2006): 1531-1535. Full Text
  - Kim, TH, Choi, S, Wu, P, Brown, A, Losurdo, M, Giangregorio, MM, Bruno, G, and Moto, A. "Real time spectroscopic ellipsometry investigation of homoepitaxial GaN grown by plasma assisted molecular beam epitaxy." Physica Status Solidi (C) Current Topics in Solid State Physics 3 (July 31, 2006): 1583-1586. Full Text
  - Losurdo, M, Capezzuto, P, Bruno, G, Brown, AS, Brown, T, and May, G. "Fundamental reactions controlling anion exchange during mixed anion heterojunction formation: Chemistry of As-for-Sb and Sb-for-As exchange reactions." Journal of Applied Physics 100, no. 1 (July 26, 2006). Full Text
  - Kim, TH, Choi, S, Brown, AS, Losurdo, M, and Bruno, G. "Impact of 4H- And 6H-SiC(0001) nitridation on Ga wetting layer development and GaN growth by molecular beam epitaxy." Applied Physics Letters 89, no. 2 (July 24, 2006). Full Text
  - Triplett, GE, Brown, AS, and May, GS. "Strain monitoring in InAs–AlxGa1−xAsySb1−y structures grown by molecular beam epitaxy." Applied Physics Letters 89, no. 3 (July 17, 2006): 032106-032106. Full Text
  - Triplett, GE, Brown, AS, and May, GS. "Strain monitoring in InAs-AlxGa1-xAsySb1-y structures grown by molecular beam epitaxy." Applied Physics Letters 89, no. 3 (July 2006): 345-349. (Academic Article)
  - Losurdo, M, Giangregorio, MM, Bruno, G, Kim, TH, Wu, P, Choi, S, Morse, M, Brown, A, Masia, F, Polimeni, A, and Capizzi, M. "Modification of InN properties by interactions with hydrogen and nitrogen." Materials Research Society Symposium Proceedings 892 (May 15, 2006): 155-160.
  - Brown, AS, Losurdo, M, Capezzuto, P, Bruno, G, Brown, T, and May, G. "Fundamental reactions controlling anion exchange during mixed anion heterojunction formation: Chemistry and kinetics of P-for-As exchange reaction." Journal of Applied Physics 99, no. 9 (May 1, 2006). Full Text
  - Losurdo, M, Giangregorio, MM, Bruno, G, Kim, TH, Choi, S, and Brown, A. "Buffer free MOCVD growth of GaN on 4H-SiC: Effect of substrate treatments and UV-photoirradiation." Physica Status Solidi (A) Applications and Materials Science 203, no. 7 (May 1, 2006): 1607-1611. Full Text
  - Garcia, MA, Wolter, SD, Kim, TH, Choi, S, Baier, J, Brown, A, Losurdo, M, and Bruno, G. "Surface oxide relationships to band bending in GaN." Applied Physics Letters 88, no. 1 (April 10, 2006). Full Text
  - Losurdo, M, Bruno, G, Kim, TH, Choi, S, and Brown, A. "Study of the dielectric function of hexagonal InN: Impact of indium clusters and of native oxide." Applied Physics Letters 88, no. 12 (March 20, 2006). Full Text
  - Triplett, GE, Brown, AS, and May, GS. "Interrelationships in the electronic and structural characteristics of strained InAs quantum well structures." Journal of Crystal Growth 286, no. 2 (January 15, 2006): 345-349. Full Text
  - Yi, C, Kim, TH, and Brown, AS. "InAs-based p-n homojunction diodes: Doping effects and impact of doping on device parameters." Journal of Electronic Materials 35, no. 9 (January 1, 2006): 1712-1714. Full Text
  - Brown, AS, Losurdo, M, Kim, TH, Giangregorio, MM, Choi, S, Morse, M, Wu, P, Capezzuto, P, and Bruno, G. "The impact of SiC substrate treatment on the heteroepitaxial growth of GaN by plasma assisted MBE." Crystal Research and Technology 40, no. 10-11 (November 1, 2005): 997-1002. Full Text
  - Losurdo, M, Bruno, G, Kim, TH, Choi, S, Brown, A, and Moto, A. "Nucleation and growth mode of the molecular beam epitaxy of GaN on 4H-SiC exploiting real time spectroscopic ellipsometry." Journal of Crystal Growth 284, no. 1-2 (October 15, 2005): 156-165. Full Text
  - Losurdo, M, Giangregorio, MM, Capezzuto, P, Bruno, G, Kim, TH, Choi, S, and Brown, A. "Remote plasma assisted MOCVD growth of GaN on 4H-SiC: Growth mode characterization exploiting ellipsometry." Epj Applied Physics 31, no. 3 (September 1, 2005): 159-164. Full Text
  - Seo, SW, Cho, SY, Huang, S, Jokerst, NM, and Brown, AS. "Pulse response tuning of high speed InGaAs thin film MSM photodetector using external RCL loads." Proceedings of Spie the International Society for Optical Engineering 5726 (July 21, 2005): 52-60. Full Text
  - Losurdo, M, Capezzuto, P, Bruno, G, Brown, A, Kim, TH, Yi, C, Zakharov, DN, and Liliental-Weber, Z. "Interfacial reactions during GaN and AiN epitaxy on 4H- and 6H-SiC(0001)." Applied Physics Letters 86, no. 2 (January 10, 2005). Full Text
  - Brown, AS. "Flat, cheap, and under control [electrochemical mechanical planarization]." IEEE Spectr. (USA) 42, no. 1 (2005): 40-45. (Academic Article) Full Text Link to Item
  - Kim, T-H, Choi, S, Morse, M, Wu, P, Yi, C, Brown, A, Losurdo, M, Giangregorio, MM, and Bruno, G. "Impact of unintentional and intentional nitridation of the 6H-SiC(0001)[sub Si] substrate on GaN epitaxy." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 23, no. 3 (2005): 1181-1181. Full Text
  - Losurdo, M, Giangregorio, MM, Capezzuto, P, Bruno, G, Brown, AS, Kim, TH, and Yi, C. "Modification of 4H-SiC and 6H-SiC(0001)Si surfaces through the interaction with atomic hydrogen and nitrogen." Journal of Electronic Materials 34, no. 4 (January 1, 2005): 457-465. Full Text
  - Seo, SW, Cha, C, Cho, SY, Huang, S, Jokerst, NM, Brooke, MA, and Brown, AS. "Etch enhanced low capacitance, large area thin film InGaAs metal-semiconductor-metal photodetectors." Conference Proceedings Lasers and Electro Optics Society Annual Meeting Leos 1 (December 1, 2004): 222-223.
  - Song, I, Seo, SW, Hyun, S, Kim, D, Huang, S, Brooke, M, Jokerst, NM, and Brown, A. "A 10 Gbit/s Si CMOS transimpedance amplifier with an integrated MSM photodetector for optical interconnections." Conference Proceedings Lasers and Electro Optics Society Annual Meeting Leos 2 (December 1, 2004): 517-518.
  - Losurdo, M, Giangregorio, MM, Bruno, G, Brown, A, and Kim, TH. "Study of the interaction of 4H-SiC and 6H-SiC(0001)Sisurfaces with atomic nitrogen." Applied Physics Letters 85, no. 18 (November 1, 2004): 4034-4036. Full Text
  - Seo, SW, Cho, SY, Huang, S, Brown, AS, and Jokerst, NM. "High speed InGaAs thin film MSM photodetector characterization using a fiber-based electro-optic sampling system." Proceedings of Spie the International Society for Optical Engineering 5353 (August 17, 2004): 48-56. Full Text
  - Losurdo, M, Giangregorio, MM, Capezzuto, P, Bruno, G, Namkoong, G, Doolittle, WA, and Brown, AS. "Interaction of GaN epitaxial layers with atomic hydrogen." Applied Surface Science 235, no. 3 (August 15, 2004): 267-273. Full Text
  - Brown, AS, Losurdo, M, Bruno, G, Brown, T, and May, G. "Fundamental reactions controlling anion exchange during the synthesis of Sb/As mixed-anion heterojunctions." Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 22, no. 4 (July 1, 2004): 2244-2249. Full Text
  - Seo, SW, Jokerst, NM, Cho, SY, Brown, AS, Huang, S, Shin, JJ, and Brooke, MA. "High-speed large-area inverted InGaAs thin-film metal-semiconductor-metal photodetectors." Ieee Journal on Selected Topics in Quantum Electronics 10, no. 4 (July 1, 2004): 686-693. Full Text
  - Losurdo, M, Giangregorio, MM, Capezzuto, P, Bruno, G, Namkoong, G, Doolittle, WA, and Brown, AS. "Interplay between GaN polarity and surface reactivity towards atomic hydrogen." Journal of Applied Physics 95, no. 12 (June 15, 2004): 8408-8418. Full Text
  - Losurdo, M, Bruno, G, Brown, A, and Kim, TH. "Study of the temperature-dependent interaction of 4H-SiC and 6H-SiC surfaces with atomic hydrogen." Applied Physics Letters 84, no. 20 (May 17, 2004): 4011-4013. Full Text
  - Huang, Z, Cha, C, Chen, S, Sarmiento, T, Shen, JJ, Jokerst, NM, Brooke, MA, May, G, and Brown, AS. "InGaAs MSM Photodetectors Modeling Using DOE Analysis." Proceedings of Spie the International Society for Optical Engineering 5178 (May 3, 2004): 148-155. Full Text
  - Losurdo, M, Giuva, D, Giangregorio, MM, Bruno, G, and Brown, AS. "Spectroscopic ellipsometry characterization of interface reactivity in GaAs-based superlattices." Thin Solid Films 455-456 (May 1, 2004): 457-461. Full Text
  - Triplett, GE, Brown, AS, and May, GS. "Charge modification in InAs/AlxGa1-xSb HEMT structures." Journal of Crystal Growth 265, no. 1-2 (April 15, 2004): 47-52. Full Text
  - Losurdo, M, Giuva, D, Bruno, G, Huang, S, Kim, TH, and Brown, AS. "The surface modification and reactivity of LiGaO2 substrates during GaN epitaxy." Journal of Crystal Growth 264, no. 1-3 (March 15, 2004): 139-149. Full Text
  - Doolittle, WA, Namkoong, G, Carver, AG, and Brown, AS. "Challenges and potential payoff for crystalline oxides in wide bandgap semiconductor technology." Solid State Electronics 47, no. 12 (December 1, 2003): 2143-2147. Full Text
  - Losurdo, M, Giangregorio, MM, Bruno, G, Brown, AS, Doolittle, WA, Namkoong, G, Ptak, AJ, and Myers, TH. "Surface potential measurements of doping and defects in p-GaN." Materials Research Society Symposium Proceedings 798 (December 1, 2003): 805-810.
  - Losurdo, M, Giuva, D, Capezzuto, P, Bruno, G, Brown, T, Triplett, G, May, G, and Brown, AS. "A study of anion exchange reactions at GaAs surfaces for heterojunction interface control." Materials Research Society Symposium Proceedings 799 (December 1, 2003): 97-102.
  - Namkoong, G, Doolittle, WA, Brown, AS, Losurdo, M, Giangregorio, MM, and Bruno, G. "Effect of buffer design on AlGaN/AlN/GaN heterostrucutres by MBE." Materials Research Society Symposium Proceedings 798 (December 1, 2003): 359-364.
  - Kuech, TF, Liu, N, Kim, TH, Yi, C, and Brown, AS. "Alternative substrates for InP and related materials." Conference Proceedings International Conference on Indium Phosphide and Related Materials (July 25, 2003): 562-null.
  - Namkoong, G, Doolittle, WA, Brown, AS, Losurdo, M, Giangregorio, MM, and Bruno, G. "The impact of substrate nitridation temperature and buffer design and synthesis on the polarity of GaN epitaxial films." Journal of Crystal Growth 252, no. 1-3 (May 1, 2003): 159-166. Full Text
  - Wang, YQ, Wang, ZL, Shen, JJ, and Brown, A. "Effect of dissimilar anion annealing on structures of InAs/GaAs quantum dots." Journal of Crystal Growth 252, no. 1-3 (May 2003): 58-67. Full Text
  - Jokerst, NM, Brooke, MA, Cho, SY, Wilkinson, S, Vrazel, M, Fike, S, Tabler, J, Joo, YJ, Seo, SW, Wills, DS, and Brown, A. "The heterogeneous integration of optical interconnections into integrated microsystems." Ieee Journal on Selected Topics in Quantum Electronics 9, no. 2 (March 1, 2003): 350-360. Full Text
  - Brown, AS. "Superconducting circuit makers pin hopes on wireless filters." IEEE Spectr. (USA) 40, no. 4 (2003): 3 pp.-. (Academic Article)
  - Seo, SW, Shen, JJ, Jokerst, NM, and Brown, AS. "Large area, high speed InGaAs thin film MSMs for heterogeneously integrated optoelectronics." Osa Trends in Optics and Photonics Series 88 (January 1, 2003): 460-463.
  - Doolittle, WA, Namkoong, G, Carver, A, Henderson, W, Jundt, D, and Brown, AS. "III-nitride growth on lithium niobate: A new substrate material for polarity engineering in III-nitride heteroepitaxy." Materials Research Society Symposium Proceedings 743 (December 1, 2002): 9-14.
  - Triplett, G, May, G, and Brown, A. "Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks." Solid State Electronics 46, no. 10 (October 2002): 1519-1524. Full Text
  - Yi, C, Metzger, RA, and Brown, AS. "The effect of strained Al0.7In0.3As emitter layers on abrupt N-p+ AllnAs-GaInAs heterojunction diodes and heterojunction bipolar transistors." Journal of Electronic Materials 31, no. 8 (August 2002): 841-847. Full Text
  - Wang, YQ, Wang, ZL, Brown, T, Brown, A, and May, G. "Thermodynamic analysis of anion exchange during heteroepitaxy." Journal of Crystal Growth 242, no. 1-2 (July 2002): 5-14. Full Text
  - Wang, YQ, Wang, ZL, Shen, JJ, and Brown, AS. "Engineering vertically aligned InAs/GaAs quantum dot structures via anion exchange." Solid State Communications 122, no. 10 (June 2002): 553-556. Full Text
  - Namkoong, G, Doolittle, WA, Brown, AS, Losurdo, M, Capezzuto, P, and Bruno, G. "Role of low-temperature (200 °C) nitridation in the growth of GaN by plasma-assisted molecular-beam epitaxy." Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 20, no. 3 (May 1, 2002): 1221-1228. Full Text
  - Trassoudaine, A, Siozade, L, Aujol, E, Cadoret, R, Castelluci, D, and Vasson, A. "Thickness Influence on Optical and Morphological Properties of HVPE GaN Layers Grown on MOCVD GaN Layers." Physica Status Solidi (A) 190, no. 1 (March 2002): 53-58. Full Text
  - Losurdo, M, Capezzuto, P, Bruno, G, Namkoong, G, Doolittle, WA, and Brown, AS. "Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part II. Interplay between chemistry and structure of layers." Journal of Applied Physics 91, no. 4 (February 15, 2002): 2508-2518. Full Text
  - Namkoong, G, Doolittle, WA, Brown, AS, Losurdo, M, Capezzuto, P, and Bruno, G. "Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part I. Impact of the nitridation chemistry on material characteristics." Journal of Applied Physics 91, no. 3 (February 1, 2002): 2499-2507. Full Text
  - Seo, S, Lee, KK, Kang, S, Huang, S, Doolittle, WA, Jokerst, NM, Brown, AS, and Brooke, MA. "The heterogeneous integration of GaN thin-film metal-semiconductor-metal photodetectors onto silicon." Ieee Photonics Technology Letters 14, no. 2 (February 1, 2002): 185-187. Full Text
  - Yi, C, Kim, T-H, and Brown, AS. "InP-based AllnAs/GaAs0.51Sb0.49/GaInAs single heterojunction bipolar transistor for high-speed and RF wireless applications." Journal of Electronic Materials 31, no. 2 (February 2002): 95-98. Full Text
  - Brown, T, Brown, A, and May, G. "Anion exchange at the interfaces of mixed anion III–V heterostructures grown by molecular beam epitaxy." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 20, no. 4 (2002): 1771-1771. Full Text
  - Cheung, M, Namkoong, G, Furis, M, Chen, F, Cartwright, AN, Doolittle, WA, and Brown, A. "Time resolved optical studies of InGaN layers grown on LGO." Materials Research Society Symposium - Proceedings 743 (2002): 659-664.
  - Kim, T-H, Yi, C, Brown, AS, Moran, P, and Kuech, T. "The Heterogeneous Integration of InAlAs/InGaAs Heterojunction Diodes on GaAs: Impact of Wafer Bonding on Structural and Electrical Characteristics." Proceedings IEEE Lester Eastman Conference on High Performance Devices (2002): 384-392.
  - Losurdo, M, Capezzuto, P, Bruno, G, Namkoong, G, Doolittle, WA, and Brown, AS. "Plasmas for the low-temperature growth of high-quality GaN films by molecular beam epitaxy and remote plasma MOCVD." Physica Status Solidi (A) Applied Research 190, no. 1 (2002): 43-51. Full Text
  - Losurdo, M, Capezzuto, P, Bruno, G, Namkoong, G, Doolittle, WA, and Brown, AS. "Plasmas for the low-temperature growth of high-quality GaN films by molecular beam epitaxy and remote plasma MOCVD." Physica Status Solidi (A) Applied Research 190, no. 1 (2002): 43-51. (Academic Article) Full Text Link to Item
  - Losurdo, M, Giangregorio, M, Capezzuto, P, Bruno, G, Namkoong, G, Doolittle, WA, and Brown, AS. "A chemical perspective of GaN polarity: The use of hydrogen plasma dry etching versus NaOH wet etching to determine polarity." Materials Research Society Symposium - Proceedings 722 (2002): 103-108.
  - Namkoong, G, Doolittle, WA, Brown, AS, Losurdo, M, Capezzuto, P, and Bruno, G. "Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part I. Impact of the nitridation chemistry on material characteristics." Journal of Applied Physics 91, no. 3 (2002): 2499-2507. Full Text
  - Seo, S, Kang, S, Huang, S, Lee, K, Doolittle, W, Jokerst, N, Brown, A, and Brooke, M. "Thin film GaN metal-semiconductor-metal photodetectors integrated onto silicon." Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest (2002): 630-631.
  - Brown, AS, Doolittle, WA, Jokerst, NM, Kang, S, Huang, S, and Seo, SW. "Heterogeneous materials integration: Compliant substrates to active device and materials packaging." Materials Science and Engineering B: Solid State Materials for Advanced Technology 87, no. 3 (December 19, 2001): 317-322. Full Text
  - Doolittle, WA, Brown, AS, Kang, S, Seo, SW, Huang, S, and Jokerst, NM. "Recent Advances in III-Nitride Devices Grown on Lithium Gallate." Physica Status Solidi (A) 188, no. 2 (December 2001): 491-495. Full Text
  - Losurdo, M, Capezzuto, P, Bruno, G, Namkoong, G, Doolittle, WA, and Brown, AS. "The Chemistry of Sapphire Nitridation in Relation to the GaN Structural Quality: Why Low Temperature 200��C Nitridation?." Physica Status Solidi (A) 188, no. 2 (December 2001): 561-565. Full Text
  - Doolittle, WA, Brown, AS, Kang, S, Seo, SW, Huang, S, and Jokerst, NM. "Recent Advances in III-Nitride Devices Grown on Lithium Gallate." Physica Status Solidi (A) Applied Research 188, no. 2 (November 1, 2001): 491-495. Full Text
  - Losurdo, M, Capezzuto, P, Bruno, G, Namkoong, G, Doouttle, WA, and Brown, AS. "The Chemistry of Sapphire Nitridation in Relation to the GaN Structural Quality: Why Low Temperature 200°C Nitridation?." Physica Status Solidi (A) Applied Research 188, no. 2 (November 1, 2001): 561-565. Full Text
  - Wang, YQ, Wang, ZL, Brown, T, Brown, A, and May, G. "Interfacial roughening in lattice-matched GaInP/GaAs heterostructures." Thin Solid Films 397, no. 1-2 (October 2001): 162-169. Full Text
  - Lee, KK, Doolittle, WA, Kim, T-H, Brown, AS, May, GS, Stock, SR, Dai, ZR, and Wang, ZL. "A comparative study of surface reconstruction of wurtzite GaN on (0001) sapphire by RF plasma-assisted molecular beam epitaxy." Journal of Crystal Growth 231, no. 1-2 (September 2001): 8-16. Full Text
  - Seo, SW, Lee, KK, Kang, S, Huang, S, Doolittle, WA, Jokerst, NM, and Brown, AS. "GaN metal-semiconductor-metal photodetectors grown on lithium gallate substrates by molecular-beam epitaxy." Applied Physics Letters 79, no. 9 (August 27, 2001): 1372-1374. Full Text
  - Brown, A, Llewellyn, D, and Usselman, M. "Institutional self-assessments as change agents: Georgia tech's two year experience." ASEE Annual Conference Proceedings (2001): 5947-5958.
  - Brown, AS, Jokerst, NM, Doolittle, A, Brooke, M, Kuech, TF, Seo, SW, Kang, S, Huang, S, and Shen, JJ. "Heterogeneous integration: From substrate technology to active packaging." Technical Digest International Electron Devices Meeting (January 1, 2001): 197-200. Full Text
  - Kang, S, Doolittle, WA, Lee, KK, Dai, ZR, Wang, ZL, Stock, SR, and Brown, AS. "Characterization of algan/gan structures on various substrates grown by radio frequency-plasma assisted molecular beam epitaxy." Journal of Electronic Materials 30, no. 3 (January 1, 2001): 156-161. Full Text
  - Losurdo, M, Capezzuto, P, Bruno, G, Namkoong, G, Doolittle, WA, and Brown, AS. "The chemistry of sapphire nitridation in relation to the GaN structural quality: Why low temperature 200°C nitridation?." Phys. Status Solidi A (Germany) 188, no. 2 (2001): 561-565. (Academic Article) Full Text Link to Item
  - Shen, J-J, Brown, AS, Wang, Y, and Wang, ZL. "Self-assembled quantum dot transformations via anion exchange." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 19, no. 4 (2001): 1463-1463. Full Text
  - Vrazel, M, Chang, JJ, Song, ID, Chung, KS, Brooke, M, Jokerst, NM, Brown, A, and Wills, DS. "Highly alignment tolerant InGaAs inverted MSM photodetector heterogeneously integrated on a differential Si CMOS receiver operating at 1 Gbps." Proceedings Electronic Components and Technology Conference (January 1, 2001): 8-13. Full Text
  - Namkoong, G, Doolittle, WA, and Brown, AS. "Incorporation of Mg in GaN grown by plasma-assisted molecular beam epitaxy." Applied Physics Letters 77, no. 26 (December 25, 2000): 4386-4388. Full Text
  - Vrazel, M, Chang, JJ, Brooke, M, Jokerst, NM, Joo, Y, Carastro, L, Dagnall, G, and Brown, A. "Analysis of alignment tolerant hybrid optoelectronic receivers for high density interconnection substrates." Proceedings Electronic Components and Technology Conference (December 1, 2000): 223-230.
  - Wang, YQ, Wang, ZL, Brown, T, Brown, A, and May, G. "Lateral compositional modulation in lattice-matched GaInP/GaAs heterostructures." Journal of Electronic Materials 29, no. 12 (December 2000): 1372-1379. Full Text
  - Brown, AS, and Doolittle, WA. "The status and promise of compliant substrate technology." Applied Surface Science 166, no. 1-4 (October 2000): 392-398. Full Text
  - Wang, YQ, Wang, ZL, Brown, T, Brown, A, and May, G. "Configurations of misfit dislocations at interfaces of lattice-matched Ga0.5In0.5P/GaAs heterostructures." Applied Physics Letters 77, no. 2 (July 10, 2000): 223-225. Full Text
  - Brown, AS, Doolittle, WA, Kang, S, Shen, J-J, Wang, ZL, and Dai, Z. "The growth of GaN on lithium gallate (LiGaO2) substrates for material integration." Journal of Electronic Materials 29, no. 7 (July 2000): 894-896. Full Text
  - Jokerst, NM, Brooke, MA, Laskar, J, Wills, DS, Brown, AS, and Ingram, MA. "Building collaborative teams for multidisciplinary educational projects in optoelectronics." Sixth International Conference on Education and Training in Optics and Photonics (June 16, 2000). Full Text
  - Doolittle, WA, Kang, S, and Brown, A. "MBE growth of high quality GaN on LiGaO2 for high frequency, high power electronic applications." Solid State Electronics 44, no. 2 (February 2000): 229-238. Full Text
  - Kim, T-H, Brown, AS, and Metzger, RA. "Electrical properties of InAlAs/InAsxP1-x/InP composite-channel modulation-doped structures grown by solid source molecular beam epitaxy." Journal of Electronic Materials 29, no. 2 (February 2000): 215-221. Full Text
  - Jokerst, NM, Brooke, MA, Laskar, J, Wills, DS, Brown, AS, Vendier, O, Bond, SW, Cross, JB, Vrazel, M, Thomas, M, Lee, M, Jung, S, Joo, Y, and Chang, JJ. "Smart photonics: Optoelectronics integrated with Si CMOS VLSI circuits." Proceedings of SPIE - The International Society for Optical Engineering 4109 (2000): 241-251.
  - Jokerst, NM, Brooke, MA, Laskar, J, Wills, DS, Brown, AS, Vrazel, M, Jung, S, Joo, Y, and Chang, JJ. "Microsystem Optoelectronic Integration for Mixed Multisignal Systems." Ieee Journal on Selected Topics in Quantum Electronics 6, no. 6 (January 1, 2000): 1231-1237. Full Text
  - Kang, S, Doolittle, WA, Stock, SR, and Brown, AS. "Comparison of AlGaN and GaN grown on various substrates: Step flow growth on LiGaO2 at low growth temperature." Materials Science Forum 338 (II (2000): 1499-1502. (Academic Article)
  - Kang, S, Doolittle, WA, Stock, SR, and Brown, AS. "Comparison of AlGaN and GaN grown on various substrates: Step flow growth on LiGaO₂ at low growth temperature." Materials Science Forum 338 (2000): II/--.
  - Lee, K, Seo, S, Huang, S, Joo, Y, Doolittle, WA, Fike, S, Jokerst, N, Brooke, M, Brown, A, Jensen, JE, and De Lyon, TJ. "Design of a smart pixel multispectral imaging array using 3D stacked thin film detectors on Si CMOS circuits." Leos Summer Topical Meeting (January 1, 2000): 57-58. Full Text
  - Lee, K, Seo, S, Vrazel, M, Huang, S, Doolittle, W, Jokerst, N, and Brown, A. "GaN thin film material bonded to host substrates using selective chemical etching." Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS 2 (2000): 559-560.
  - Lee, KK, Brown, T, Dagnall, G, Bicknell-Tassius, R, Brown, A, and May, G. "Neural Network Modeling of Molecular Beam Epitaxy." American Society of Mechanical Engineers, Heat Transfer Division, (Publication) HTD 366 (2000): 119-127.
  - Lee, KK, Brown, T, Dagnall, G, Bicknell-Tassius, R, Brown, A, and May, GS. "Using neural networks to construct models of the molecular beam epitaxy process." Ieee Transactions on Semiconductor Manufacturing 13, no. 1 (2000): 34-45. Full Text
  - Lee, KK, Doolittle, WA, Brown, AS, May, GS, and Stock, SR. "Using statistical experimental design to investigate the role of the initial growth conditions on GaN epitaxial films grown by molecular beam epitaxy." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 18, no. 3 (2000): 1448-1448. Full Text
  - Namkoong, G, Doolittle, WA, Kang, S, Sa, H, Brown, AS, and Stock, SR. "Low temperature nitridation combined with high temperature buffer annealing for high quality GaN grown by plasma-assisted MBE." MRS Internet Journal of Nitride Semiconductor Research 5 (2000).
  - Shen, J-J, Kim, T-H, and Brown, AS. "Growth and characterization of InGaAs/AlInAs HEMT structures on oxide-bonded InGaAs substrates." IEEE International Symposium on Compound Semiconductors, Proceedings (2000): 131-135.
  - Vrazel, M, Chang, JJ, Brooke, M, Jokerst, NM, Dagnall, G, and Brown, A. "Alignment tolerant InP/Si CMOS hybrid integrated photoreceivers operating at 0.9 Gbps." Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS 2 (2000): 884-885.
  - Vrazel, M, Chang, JJ, Brooke, M, Jokerst, NM, Dagnall, G, and Brown, A. "Alignment tolerant hybrid photoreceivers using inverted MSMs." LEOS Summer Topical Meeting (2000): 23-24.
  - Dagnall, G, Brown, AS, and Stock, SR. "Arsenic incorporation in InAsP/InP quantum wells." Journal of Electronic Materials 28, no. 10 (October 1999): 1108-1110. Full Text
  - Kim, T-H, Brown, AS, and Metzger, RA. "Optical and structural properties of strained InAlAs/InAsxP1−x multi-quantum wells grown by solid source molecular beam epitaxy." Journal of Applied Physics 86, no. 5 (September 1999): 2622-2627. Full Text
  - Dagnall, G, Shen, J-J, Kim, T-H, Metzger, RA, Brown, AS, and Stock, SR. "Solid source MBE growth of InAsP/InP quantum wells." Journal of Electronic Materials 28, no. 8 (August 1999): 933-938. Full Text
  - Kang, S, Doolittle, WA, Brown, AS, and Stock, SR. "Electrical and structural characterization of AlxGa1−xN/GaN heterostructures grown on LiGaO2 substrates." Applied Physics Letters 74, no. 22 (May 31, 1999): 3380-3382. Full Text
  - Matyi, RJ, Doolittle, WA, and Brown, AS. "High resolution x-ray diffraction analyses of GaN/LiGaO2." Journal of Physics D: Applied Physics 32, no. 10A (May 21, 1999): A61-A64. Full Text
  - Dagnall, G, Stock, SR, and Brown, AS. "Growth of InAsP/InP quantum wells by solid source MBE on misoriented and exact InP (111)B: substrate temperature and arsenic species effects." Journal of Crystal Growth 201-202 (May 1999): 242-247. Full Text
  - Bond, SW, Vendier, O, Lee, M, Jung, S, Vrazel, M, Lopez-Lagunas, A, Chai, S, Dagnall, G, Brooke, M, Jokerst, NM, Wills, DS, and Brown, A. "Three-layer 3-D silicon system using through-Si vertical optical interconnections and Si CMOS hybrid building blocks." Ieee Journal on Selected Topics in Quantum Electronics 5, no. 2 (March 1, 1999): 276-286. Full Text
  - Chen, YC, Chin, P, Ingram, D, Lai, R, Grundbacher, R, Barsky, M, Block, T, Wojtowicz, M, Tran, L, Medvedev, V, Yen, HC, Streit, DC, and Brown, A. "Composite-channel InP HEMT for W-band power amplifiers." Conference Proceedings - International Conference on Indium Phosphide and Related Materials (1999): 305-306.
  - Doolittle, WA, and Brown, AS. "Compliant substrate processes." Materials Research Society Symposium - Proceedings 570 (1999): 225-234.
  - Jokerst, NM, Brooke, MA, Laskar, J, Wills, DS, Brown, AS, Vendier, O, Bond, S, Cross, J, Vrazel, M, Thomas, M, Lee, M, Jung, S, Joo, YJ, and Chang, JJ. "Smart photonics: Optoelectronics integrated onto Si CMOS circuits." Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS 2 (1999): 423-424.
  - Matyi, RJ, Doolittle, WA, and Brown, AS. "High resolution X-ray diffraction analyses of GaN/LiGaO₂." Journal of Physics D: Applied Physics 32, no. 10 A (1999): A61-A64.
  - Brown, AS. "Compliant substrate technology: Status and prospects." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 16, no. 4 (July 1998): 2308-2308. Full Text
  - Doolittle, WA, Kropewnicki, T, Carter-Coman, C, Stock, S, Kohl, P, Jokerst, NM, Metzger, RA, Kang, S, Lee, KK, May, G, and Brown, AS. "Growth of GaN on lithium gallate substrates for development of a GaN thin compliant substrate." Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 16, no. 3 (May 1, 1998): 1300-1304.
  - Shen, J-J. "Modification of quantum dot properties via surface exchange and annealing: Substrate temperature effects." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 16, no. 3 (May 1998): 1326-1326. Full Text
  - Doolittle, WA, Kang, S, Kropewnicki, TJ, Stock, S, Kohl, PA, and Brown, AS. "MBE growth of high quality GaN on LiGaO2." J. Electron. Mater. (USA) 27, no. 8 (1998): 58-60. (Academic Article)
  - Kropewnicki, TJ, Doolittle, WA, Carter-Coman, C, Kang, S, Kohl, PA, Jokerst, NM, and Brown, AS. "Selective wet etchinq of lithium gallate." Journal of the Electrochemical Society 145, no. 5 (January 1, 1998). Full Text
  - Shen, J-J, Jokerst, NM, and Brown, AS. "Compliant substrate strain modulated epitaxy for WDM laser arrays." Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS 1 (1998): 95-96.
  - Doolittle, WA, Kropewnicki, T, Carter-Coman, C, Stock, S, Kohl, P, Jokerst, NM, Metzger, RA, Kang, S, Lee, K, May, G, and Brown, AS. "Growth of GaN on lithium gallate substrates for development of a GaN thin compliant substrate." Materials Research Society Symposium Proceedings 482 (December 1, 1997): 283-288.
  - Carter-Coman, C, Brown, AS, Metzger, RA, Jokerst, NM, Pickering, J, and Bottomley, LA. "A new mechanism for spontaneous nanostructure formation on bottom-patterned compliant substrates." Applied Physics Letters 71, no. 19 (November 10, 1997): 2773-2775. Full Text
  - Carter-Coman, C, Bicknell-Tassius, R, Brown, AS, and Jokerst, NM. "Metastability modeling of compliant substrate critical thickness using experimental strain relief data." Applied Physics Letters 71, no. 10 (September 8, 1997): 1344-1346. Full Text
  - Carter-Coman, C, Bicknell-Tassius, R, Brown, AS, and Jokerst, NM. "Analysis of In0.07Ga0.93As layers on GaAs compliant substrates by double crystal x-ray diffraction." Applied Physics Letters 70, no. 13 (March 31, 1997): 1754-1756. Full Text
  - May, P, Lee, M, Wilkinson, ST, Vendier, O, Ho, Z, Bond, SW, Wills, DS, Brooke, M, Jokerst, NM, and Brown, A. "A 100 Mbps, LED Through-Wafer Optoelectronic Link for Multicomputer Interconnection Networks." Journal of Parallel and Distributed Computing 41, no. 1 (February 1997): 3-19. Full Text
  - Bicknell-Tassius, RN, Lee, K, Brown, AS, Dagnall, G, and May, G. "The growth of AlGaAs–InGaAs quantum-well structures by molecular beam epitaxy: Observation of critical interdependent effects." Applied Physics Letters 70, no. 1 (January 6, 1997): 52-54. Full Text
  - Bicknell-Tassius, RN, Lee, K, Brown, AS, Dagnall, G, and May, G. "Growth of AlGaAs-InGaAs quantum-well structures by molecular beam epitaxy: Observation of critical interdependent effects utilizing the design of experiments approach." Journal of Crystal Growth 175-176, no. pt 2 (1997): 1131-1137. (Academic Article) Full Text Link to Item
  - Bicknell-Tassius, RN, Lee, K, Brown, AS, Dagnall, G, and May, G. "The growth of AlGaAs-InGaAs quantum-well structures by molecular beam epitaxy: Observation of critical interdependent effects utilizing the design of experiments approach." Journal of Crystal Growth 175-176, no. PART 2 (1997): 1131-1137.
  - Carter-Coman, C, Bicknell-Tassius, R, Benz, RG, Brown, AS, and Jokerst, NM. "Analysis of GaAs substrate removal etching with citric acid:H2O2 and NH4OH:H2O2 for application to compliant substrates." Journal of the Electrochemical Society 144, no. 2 (January 1, 1997). Full Text
  - Carter-Coman, C, Bicknell-Tassius, R, Benz, RG, Brown, AS, and Jokerst, NM. "Analysis of GaAs substrate removal etching with citric acid:H ₂O ₂ and NH ₄OH:H ₂O ₂ for application to compliant substrates." Journal of the Electrochemical Society 144, no. 2 (1997): L29-L31.
  - Carter-Coman, C, Bicknell-Tassius, R, Brown, AS, and Jokerst, NM. "Compliant substrates for reduction of strain relief in mismatched overlayers." Materials Research Society Symposium - Proceedings 441 (1997): 361-366.
  - Cowles, J, Metzger, RA, Gutierrez-Aitken, A, Brown, AS, Streit, D, Oki, A, Kim, T, and Doolittle, A. "Double heterojunction bipolar transistors with InP epitaxial layers grown by solid-source MBE." Conference Proceedings - International Conference on Indium Phosphide and Related Materials (1997): 548-550.
  - Fournier, F, Metzger, RA, Doolittle, A, Brown, AS, Carter-Coman, C, Jokerst, NM, and Bicknell-Tassius, R. "Growth dynamics of InGaAs/GaAs by MBE." Journal of Crystal Growth 175-176, no. PART 1 (January 1, 1997): 203-210. Full Text
  - Fournier, F, Metzger, RA, Doolittle, A, Brown, AS, Carter-Coman, C, Jokerst, NM, and Bicknell-Tassius, R. "Growth dynamics of InGaAs/GaAs by MBE." Journal of Crystal Growth 175-176, no. PART 1 (1997): 203-210.
  - Kromann, RF, Bicknell Tassius, RN, Brown, AS, Dorsey, JF, Lee, K, and May, G. "Real-time monitoring of RHEED using machine vision techniques." Journal of Crystal Growth 175-176, no. pt 1 (1997): 334-339. (Academic Article) Full Text Link to Item
  - Kromann, RF, Bicknell-Tassius, RN, Brown, AS, Dorsey, JF, Lee, K, and May, G. "Real-time monitoring of RHEED using machine vision techniques." Journal of Crystal Growth 175-176, no. PART 1 (1997): 334-339.
  - Wang, SC, Cross, J, Chai, SM, Lopez, A, Park, J, Ingram, MA, Jokerst, NM, Wills, DS, Brooke, M, and Brown, A. "Coupling efficiency of an alignment-tolerant, single fiber, bi-directional link." Proceedings Electronic Components and Technology Conference (January 1, 1997): 30-36.
  - Carter-Coman, C, Brown, AS, Bicknell-Tassius, R, Jokerst, NM, and Allen, M. "Strain-modulated epitaxy: A flexible approach to 3-D band structure engineering without surface patterning." Applied Physics Letters 69, no. 2 (July 8, 1996): 257-259. Full Text
  - Gilbert, EP, Reynolds, PA, Brown, AS, and White, JW. "n-Paraffin solid solutions: modification of phase separation with carbon number." Chemical Physics Letters 255, no. 4-6 (June 1996): 373-377. Full Text
  - Carter-Coman, C, Brown, AS, Bicknell-Tassius, R, Jokerst, NM, Fournier, F, and Dawson, DE. "Strain-modulated epitaxy: Modification of growth kinetics via patterned, compliant substrates." Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 14, no. 3 (May 1, 1996): 2170-2174.
  - Brown, AS, Bhattacharya, P, Singh, J, Zaman, P, Sen, S, and Turco, F. "Dependence of Al0.48In0.52As Schottky diode properties on molecular beam epitaxial growth temperature." Applied Physics Letters 68, no. 2 (January 8, 1996): 220-222. Full Text
  - Carter-Coman, C, Brown, AS, Jokerst, NM, Dawson, DE, Bicknell-Tassius, R, Feng, ZC, Rajkumar, KC, and Dagnall, G. "Strain accommodation in mismatched layers by molecular beam epitaxy: Introduction of a new compliant substrate technology." Journal of Electronic Materials 25, no. 7 (January 1, 1996): 1044-1048. Full Text
  - Cat, HH, Gentile, A, Eble, JC, Lee, M, Vendier, O, Joo, YJ, Wills, DS, Brooke, M, Jokerst, NM, and Brown, AS. "SIMPil: An OE integrated SIMD architecture for focal plane processing applications." International Conference on Massively Parallel Processing Using Optical Interconnections (MPPOI), Proceedings (1996): 44-52.
  - Lee, KK, Bicknell-Tassius, R, Dagnall, G, Brown, A, and May, G. "Statistical experimental design for MBE process characterization." Proceedings of the IEEE/CPMT International Electronic Manufacturing Technology (IEMT) Symposium (1996): 378-385.
  - Carter-Coman, C, Brown, AS, Bicknell-Tassius, R, Jokerst, NM, and Allen, M. "Strain-modulated epitaxy: A flexible approach to 3-D band structure engineering without surface patterning." Applied Physics Letters (December 1, 1995): 257-null.
  - May, P, Wilkinson, ST, Jokerst, NM, Wills, DS, Lee, M, Vendier, O, Bond, SW, Hou, Z, Dagnall, G, Brooke, MA, and Brown, A. "Design issues for through-wafer optoelectronic multicomputer interconnects." International Conference on Massively Parallel Processing Using Optical Interconnections (Mppoi), Proceedings (December 1, 1995): 8-15.
  - Cat, HH, Wills, DS, Jokerst, NM, Brooke, MA, and Brown, AS. "Three-dimensional, massively parallel, optically interconnected silicon computational hardware and architectures for high-speed IR scene generation." Targets and Backgrounds: Characterization and Representation (June 2, 1995). Full Text
  - Rosenbaum, SE, Kormanyos, BK, Jelloian, LM, Matloubian, M, Brown, AS, Larson, LE, Nguyen, LD, Thompson, MA, Katehi, LPB, and Rebeiz, GM. "155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC oscillators." Ieee Transactions on Microwave Theory and Techniques 43, no. 4 (April 1995): 927-932. Full Text
  - Brown, AS, Bhattacharya, P, Singh, J, Zaman, P, Sen, S, and Turco, F. "Dependence of Al_0.48In_0.52As Schottky diode properties on molecular beam epitaxial growth temperature." Applied Physics Letters (1995): 220--.
  - Lam, F, Matloubian, M, Igawa, A, Chou, C, Kurdoghlian, A, Ngo, C, Jelloian, L, Brown, A, Thompson, M, and Larson, L. "44-GHz high-efficiency InP-HEMT MMIC power amplifier." Ieee Microwave and Guided Wave Letters 4, no. 8 (August 1994): 277-278. Full Text
  - Brown, AS, Schmitz, AE, Nguyen, LD, Henige, JA, and Larson, LE. "Growth of high performance InxGa1-xAs (.52 < x <.9) - (Al.48In.52As) high electron mobility transistors by MBE." Conference Proceedings International Conference on Indium Phosphide and Related Materials (January 1, 1994): 263-266.
  - Brown, AS, Schmitz, AE, Nguyen, LD, Henige, JA, and Larson, LE. "Growth of high performance In_xGa_1-xAs (.52 < x &lt.9) - (Al.₄₈In.₅₂As) high electron mobility transistors by MBE." Conference Proceedings - International Conference on Indium Phosphide and Related Materials (1994): 263-266.
  - Case, M, Rosenbaum, S, Ngo, C, Matloubian, M, Brown, A, Henige, J, Thompson, M, and Larson, L. "High efficiency, high gain K- and Ku-band InP-based HEMT MMIC amplifiers for array applications." (1994): 49-54.
  - Zakharov, ND, Liliental-Weber, Z, Swider, W, Washburn, J, Brown, AS, and Metzger, R. "Ordering in InGaAs/InAlAs layers." Journal of Electronic Materials 22, no. 12 (December 1993): 1495-1498. Full Text
  - Zakharov, ND, Liliental‐Weber, Z, Swider, W, Brown, AS, and Metzger, R. "Structure of Ga0.47In0.53As epitaxial layers grown on InP substrates at different temperatures." Applied Physics Letters 63, no. 20 (November 15, 1993): 2809-2811. Full Text
  - Lam, W, Matloubian, M, Kurdoghlian, A, Larson, L, Igawa, A, Chou, C, Jelloian, L, Brown, A, Thompson, M, and Ngo, C. "High-efficiency InP-based HEMT MMIC power amplifier for Q-band applications." Ieee Microwave and Guided Wave Letters 3, no. 11 (November 1993): 420-422. Full Text
  - Rosenbaum, SE, Jelloian, LM, Larson, LE, Mishra, UK, Pierson, DA, Thompson, MS, Liu, T, and Brown, AS. "A 2-GHZ three-stage AlInAs-GaInAs-InP HEMT MMIC low-noise amplifier." Ieee Microwave and Guided Wave Letters 3, no. 8 (August 1993): 265-267. Full Text
  - Matloubian, M, Brown, AS, Nguyen, LD, Melendes, MA, Larson, L, Delaney, M, Thompson, M, Rhodes, R, and Pence, J. "20-GHz high-efficiency AlInAs-GaInAs on InP power HEMT." Ieee Microwave and Guided Wave Letters 3, no. 5 (May 1993): 142-144. Full Text
  - Matloubian, M, Brown, AS, Nguyen, LD, Melendes, MA, Larson, LE, Delancey, MJ, Pence, JE, Rhodes, RA, Thompson, MA, and Henige, JA. "High-power V-band AlInAs/GaInAs on InP HEMTs." Ieee Electron Device Letters 14, no. 4 (April 1993): 188-189. Full Text
  - Brown, AS, Metzger, RA, and Henige, JA. "Growth and properties of AlInAs-GaInAs alloys and quantum wells on (110)InP." J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA) 11, no. 3 (1993): 817-819. (Academic Article) Full Text Link to Item
  - Brown, JJ, Brown, AS, Rosenbaum, SE, Schmitz, AS, Matloubian, M, Larson, LE, Melendes, MA, and Thompson, MA. "Study of the dependence of Ga0.47In0.53As/Alx In1-xAs power HEMT breakdown voltage on Schottky layer design and device layout." IEEE Trans. Electron Devices (USA) 40, no. 11 (1993): 2111-2112. (Academic Article) Full Text Link to Item
  - Kurdoghlian, A, Lam, W, Chou, C, Jellian, L, Igawa, A, Matloubian, M, Larson, L, Brown, A, Thompson, M, and Ngo, C. "High-efficiency InP-based HEMT MMIC power amplifier." Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (1993): 375-377.
  - Larson, LE, Matloubian, MM, Brown, JJ, Brown, AS, Thompson, M, and Rhodes, R. "AlInAs/GaInAs on InP HEMTs for low power supply voltage operation of high power-added efficiency microwave amplifiers." Electronics Letters 29, no. 15 (1993): 1324-1324. Full Text
  - Matloubian, M, Jelloian, LM, Brown, AS, Nguyen, LD, Larson, LE, Delaney, MJ, Thompson, MA, Rhodes, RA, and Pence, JE. "V-band high-efficiency high-power AlInAs/GaInAs/InP HEMT's." Ieee Transactions on Microwave Theory and Techniques 41, no. 12 (1993): 2206-2210. Full Text
  - Matloubian, M, Jelloian, LM, Brown, AS, Nguyen, LD, Larson, LE, Delaney, MJ, Thompson, MA, Rhodes, RA, and Pence, JE. "V-band high-efficiency high-power AlInAs/GaInAs/InP HEMTs." IEEE MTT-S International Microwave Symposium Digest 2 (1993): 535-537.
  - Matloubian, M, Larson, L, Brown, A, Jelloian, L, Nguyen, L, Lui, M, Liu, T, Brown, J, Thompson, M, Lam, W, Kurdoghlian, A, Rhodes, R, Delaney, M, and Pence, J. "InP-based HEMTs for the realization of ultra-high efficiency millimeterwave power amplifiers." Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (1993): 520-527.
  - Metzger, RA, Brown, AS, McCray, LG, and Henige, JA. "Structural and electrical properties of low temperature GaInAs." J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA) 11, no. 3 (1993): 798-801. (Academic Article) Full Text Link to Item
  - Nguyen, LD, Brown, AS, Thompson, MA, and Jelloian, LM. "50 nm InP high electron mobility transistors." Microw. J. (USA) 36, no. 6 (1993): 96, 98, 101-. (Academic Article)
  - Rosenbaum, SE, Jelloian, LM, Brown, AS, Thompson, MA, Matloubian, M, Larson, LE, Lohr, R, Kormanyos, BK, Rebeiz, GM, and Katehi, LPB. "213 GHz AlInAs/GaInAs/InP HEMT MMIC oscillator." Technical Digest - International Electron Devices Meeting (1993): 924-926.
  - Schramm, JE, Hu, EL, Merz, JL, Brown, JJ, Melendes, MA, Thompson, MA, and Brown, AS. "Highly selective reactive ion etch process for InP-based device fabrication using methane/hydrogen/argon." J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA) 11, no. 6 (1993): 2280-2283. (Academic Article) Full Text Link to Item
  - Kiziloḡlu, K, Hashemi, MM, Yin, LW, Li, YJ, Petroff, PM, Mishra, UK, and Brown, AS. "Rapid thermal annealing characteristics of bulk AlInAs/InP and AlInAs/GaInAs/InP high electron mobility transistor structures with planar silicon doping." Journal of Applied Physics 72, no. 8 (October 15, 1992): 3798-3802. Full Text
  - Nguyen, LD, Brown, AS, Thompson, MA, Jelloian, LM, Larson, LE, and Matloubian, M. "650-AA self-aligned-gate pseudomorphic Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.2/In/sub 0.8/As high electron mobility transistors." Ieee Electron Device Letters 13, no. 3 (March 1992): 143-145. Full Text
  - Brown, AS, Nguyen, LD, Metzger, RA, Schmitz, AE, and Henige, JA. "Growth and properties of high mobility strained inverted AlInAs-GaInAs modulation doped structures." J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA) 10, no. 2 (1992): 1017-1019. (Academic Article) Full Text Link to Item
  - Nguyen, LD, Brown, AS, Thompson, MA, Jelloian, LM, Larson, LE, and Matloubian, M. "650-angstrom self-aligned-gate pseudomorphic Al_0.48In_0.52As/Ga_0.20In_0.80As high electron mobility transistors." Electron device letters 13, no. 3 (1992): 143-145.
  - Nguyen, LD, Brown, AS, Thompson, MA, and Jelloian, LM. "50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors." Ieee Transactions on Electron Devices 39, no. 9 (1992): 2007-2014. Full Text
  - Brown, AS, Metzger, RA, Henige, JA, Nguyen, L, Lui, M, and Wilson, RG. "Effect of Si movement on the electrical properties of inverted AlInAs–GaInAs modulation doped structures." Applied Physics Letters 59, no. 27 (December 30, 1992): 3610-3612. Full Text
  - Metzger, RA, Brown, AS, Stanchina, WE, Lui, M, Wilson, RG, Kargodorian, TV, McCray, LG, and Henige, JA. "Growth and characterization of low temperature AlInAs." Journal of Crystal Growth 111, no. 1-4 (May 1991): 445-449. Full Text
  - Brown, AS, Nguyen, LD, Metzger, RA, Matloubian, M, Schrnitz, AE, Lui, M, Wilson, RG, and Henige, JA. "Reduced silicon movement in GaInAs/AlInAs HEMT structures with low temperature AlInAs spacers." Institute of Physics Conference Series 120 (1991): 281-286.
  - Brown, AS, and Spackman, MA. "A model study of the κ-refinement procedure for fitting valence electron densities." Acta Crystallogr. A, Found. Crystallogr. (Denmark) A47 (1991): 21-29. (Academic Article) Full Text Link to Item
  - Brown, AS. "An overview of microwave waveguide technology." Electrotechnology (UK) 2, no. 3 (1991): 120-122. (Academic Article)
  - Matloubian, M, Nguyen, LD, Brown, AS, Larson, LE, Melendes, MA, and Thompson, MA. "High power and high efficiency AlInAs/GaInAs on InP HEMTs." IEEE MTT-S International Microwave Symposium Digest 2 (1991): 721-724.
  - Schmitz, AE, Nguyen, LD, Brown, AS, and Metzger, RA. "InP-based inverted high electron mobility transistors." Ieee Transactions on Electron Devices 38, no. 12 (1991): 2702-2702. Full Text
  - Brown, AS. "The effects and implications of ESD on semiconductor technology." Electrotechnology (UK) 1, no. 4 (1990): 217-219. (Academic Article)
  - Mishra, UK, Brown, AS, Jelloian, LM, Thompson, M, Rosenbaum, SE, Nguyen, LD, Solomon, PM, Kiehl, R, and Kwark, YH. "Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15 μm gate length." Proceedings of SPIE - The International Society for Optical Engineering 1288 (1990): 21-29.
  - Mishra, UK, Brown, AS, Jelloian, LM, Melendes, MA, Thompson, M, Rosenbaum, SE, and Larson, LE. "Impact of buffer layer design on the performance of AlInAs-GaInAs HEMT's." IEEE Transactions on Electron Devices 36, no. 11 pt 1 (November 1, 1989): 2616-.
  - Delaney, MJ, Chou, CS, Larson, LE, Jensen, JF, Deakin, DS, Brown, AS, Hooper, WW, Thompson, MA, McCray, LG, and Rosenbaum, SE. "Low-temperature buffer GaAs MESFET technology for high-speed integrated circuit applications." Ieee Electron Device Letters 10, no. 8 (August 1989): 355-357. Full Text
  - Brown, AS, Chou, CS, Delaney, MJ, Hooper, CE, Jensen, JF, Larson, LE, Mishra, UK, Nguyen, LD, and Thompson, MS. "Low-temperature buffer AlInAs/GaInAs on InP HEMT technology for ultra-high-speed integrated circuits." Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (1989): 143-146.
  - Brown, AS, Chou, CS, Hooper, CE, Melendes, MA, Thompson, M, Larson, LE, Rosenbaum, SE, Delaney, MJ, and Mishra, UK. "AlInAs-GaInAs HEMT’s Utilizing Low-Temperature Alin As Buffers Grown by MBE." Ieee Electron Device Letters 10, no. 12 (January 1, 1989): 565-567. Full Text
  - Brown, AS, Delaney, MJ, and Singh, J. "The effect of inhibited growth kinetics on GaInAs and AlInAs alloy and interface quality." J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA) 7, no. 2 (1989): 384-387. (Academic Article) Full Text Link to Item
  - Brown, AS, Mishra, UK, and Rosenbaum, SE. "The Effect of Interface and Alloy Quality on the DC and RF Performance of Ga0.47In0.53As-Al0.48In0.52As HEMT's." Ieee Transactions on Electron Devices 36, no. 4 (January 1, 1989): 641-645. Full Text
  - Delaney, MJ, Brown, AS, Mishra, UK, Chou, CS, Larson, LE, Nguyen, L, and Jensen, J. "Low temperature MBE growth of GaAs and AlInAs for high speed devices." (1989): 64-72.
  - Delaney, MJ, Chou, CS, Larson, LE, Jensen, JF, Deakin, DS, Brown, AS, Hooper, WW, Thompson, MA, McCray, LG, and Rosenbaum, SE. "GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology." 1989 Proceedings of the Ieee Custom Integrated Circuits Conference (1989). Full Text
  - Delaney, MJ, Chou, CS, Larson, LE, Jensen, JF, Deakin, DS, Brown, AS, Hooper, WW, Thompson, MA, McCray, LG, and Rosenbaum, SE. "GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology." Proceedings of the Custom Integrated Circuits Conference (1989): 18.3.1-18.3.4. Full Text
  - Jensen, JF, Mishra, UK, Brown, AS, Salmon, LG, and Delaney, MJ. "Ultrahigh speed static and dynamic frequency divider circuits." Microwave journal 32, no. 3 (1989).
  - Jensen, JF, Mishra, UK, Brown, AS, Salmon, LG, and Delaney, MJ. "Ultrahigh speed static and dynamic frequency divider circuits." Microw. J. (USA) 32, no. 3 (1989): 131-132. (Academic Article)
  - Mishra, UK, Brown, AS, Delaney, MJ, Greiling, PT, and Krumm, CF. "AlInAs-GaInAs HEMT for microwave and millimeter-wave applications." Ieee Transactions on Microwave Theory and Techniques 37, no. 9 (1989): 1279-1285. Full Text
  - Mishra, UK, Brown, AS, Jelloian, LM, Melendes, MA, Thompson, M, Rosenbaum, SE, and Larson, LE. "Impact of buffer layer design on the performance of AlInAs-GaInAs HEMT's." IEEE Transactions on Electron Devices 36, no. 11 pt 1 (1989): 2616--.
  - Mishra, UK, Brown, AS, Jelloian, LM, Thompson, M, Nguyen, LD, and Rosenbaum, SE. "Novel high performance self-aligned 0.15 micron long T-gate AlInAs-GaInAs HEMTs." Technical Digest - International Electron Devices Meeting (1989): 101-104.
  - Mishra, UK, Jensen, JF, Rensch, DB, Brown, AS, Stanchina, WE, Trew, RJ, Pierce, MW, and Kargodorian, TV. "Self-aligned AlInAs-GaInAs heterojunction bipolar transistors and circuits." Electron device letters 10, no. 10 (1989): 467-469.
  - Nguyen, L, Brown, A, Delaney, M, Mishra, U, Larson, L, Jelloian, L, Melendes, M, Hooper, C, and Thompson, M. "Vertical scaling of ultra-high-speed AlInAs-GaInAs HEMTs." Technical Digest - International Electron Devices Meeting (1989): 105-108.
  - Mishra, UK, Brown, AS, Rosenbaum, SE, Hooper, CE, Pierce, MW, Delaney, MJ, Vaughn, S, and White, K. "Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate length." Ieee Electron Device Letters 9, no. 12 (December 1988): 647-649. Full Text
  - Brown, AS, Mishra, UK, Henige, JA, and Delaney, MJ. "The effect of InP substrate misorientation on GaInAs‐AlInAs interface and alloy quality." Journal of Applied Physics 64, no. 7 (October 1988): 3476-3480. Full Text
  - Mishra, UK, Jensen, JF, Brown, AS, Thompson, MA, Jelloian, LM, and Beaubien, RS. "Ultra-high-speed digital circuit performance in 0.2- mu m gate-length AlInAs/GaInAs HEMT technology." Ieee Electron Device Letters 9, no. 9 (September 1988): 482-484. Full Text
  - Brown, AS, Mishra, UK, Henige, JA, and Delaney, MJ. "The impact of epitaxial layer design and quality on GaInAs/AlInAs high-electron-mobility transistor performance." J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA) 6, no. 2 (1988): 678-681. (Academic Article) Full Text Link to Item
  - Jensen, JF, Mishra, UK, Brown, AS, Beaubien, RS, Thompson, MA, and Jelloian, LM. "25 GHz static frequency dividers in AlInAs-GaInAs HEMT technology." Digest of Technical Papers - IEEE International Solid-State Circuits Conference 31 (1988): 268-269.
  - Mishra, UK, Brown, AS, Jelloian, LM, Hackett, LH, and Delaney, MJ. "High-Performance Submicrometer AlInAs-GalnAs HEMT's." Ieee Electron Device Letters 9, no. 1 (January 1, 1988): 41-43. Full Text
  - Mishra, UK, Brown, AS, Rosenbaum, SE, Delaney, MJ, Vaughn, S, and White, K. "Noise performance of submicrometer AlInAs-GaInAs HEMTs." Ieee Transactions on Electron Devices 35, no. 12 (1988): 2441-2441. Full Text
  - Mishra, UK, Brown, AS, and Rosenbaum, SE. "DC and RF performance of 0.1 μm gate length Al_.48In_.52As-Ga_.38In_.62As pseudomorphic HEMT's." Technical Digest - International Electron Devices Meeting (1988): 180-183.
  - Mishra, UK, Jensen, JF, Rensch, DB, Brown, AS, Pierce, MW, McCray, LG, Kargodorian, TV, Hoefer, WS, and Kastris, RE. "48 GHz AlInAs/GaInAs heterojunction bipolar transistors." Technical Digest - International Electron Devices Meeting (1988): 873-875.
  - Mishra, UK, and Brown, AS. "InGaAs/AlInAs HEMT technology for millimeter wave applications." Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (1988): 97-100.
  - Griem, HT, Hsieh, KH, D'Haenens, IJ, Delaney, MJ, Henige, JA, Wicks, GW, and Brown, AS. "Characterization of strained GaInAs/AlInAs quantum well TEGFETS grown by molecular beam epitaxy." Journal of Crystal Growth 81, no. 1-4 (February 1987): 383-390. Full Text
  - Griem, HT, Hsieh, KH, D'Haenens, IJ, Delaney, MJ, Henige, JA, Wicks, GW, and Brown, AS. "Molecular-beam epitaxial growth and characterization of strained GaInAs/AlInAs and InAs/GaAs quantum well two-dimensional electron gas field-effect transistors." J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA) 5, no. 3 (1987): 785-791. (Academic Article) Full Text Link to Item
  - Mishra, UK, Beaubien, RS, Delaney, MJ, Brown, AS, and Hackett, LH. "LOW NOISE 0. 1- mu m GaAs MESFETS BY MBE." (1987): 177-189.
  - Mishra, UK, Brown, AS, Jelloian, LM, Hackett, LH, and Delaney, MJ. "HIGH PERFORMANCE SUBMICROMETER ALINAS-GAINAS HEMT'S." IEEE Transactions on Electron Devices ED-34, no. 11 (1987).
  - Mishra, UK, Brown, AS, Jelloian, LM, Hackett, LH, and Delaney, MJ. "HIGH PERFORMANCE SUBMICROMETER ALINAS-GAINAS HEMT'S." IEEE Transactions on Electron Devices ED-34, no. 11 (1987): 4-. (Academic Article)
  - Mishra, UK, Jensen, JF, Brown, AS, Beaubien, RS, and Jelloian, LM. "ULTRA-HIGH SPEED AlInAs-GaInAs HEMT TECHNOLOGY." Technical Digest - International Electron Devices Meeting (1987): 879-880.
  - Brown, AS, Itoh, T, Wicks, G, and Eastman, LF. "Si diffusion in GaInAs‐AlInAs high‐electron‐mobility transistor structures." Journal of Applied Physics 60, no. 10 (November 15, 1986): 3495-3498. Full Text
  - Brown, AS, Wicks, GW, and Eastman, LF. "Mn redistribution in doped GaInAs." J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA) 4, no. 2 (1986): 543-544. (Academic Article) Full Text Link to Item
  - Itoh, T, Brown, AS, Camnitz, LH, Wicks, GW, Berry, JD, and Eastman, LF. "DEPLETION- AND ENHANCEMENT-MODE Al//0//. //4//8In//0//. //5//2As/Ga//0//. //4//7In//0//. //5//3As MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH A RECESSED GATE STRUCTURE." Institute of Physics Conference Series , no. 79 (1986): 571-576.
  - Mishra, UK, Beaubien, RS, Delaney, MJ, Brown, AS, and Hackett, LH. "MBE GROWN GaAs MESFETS WITH ULTRA-HIGH G//M AND F//T." Technical Digest - International Electron Devices Meeting (1986): 829-831.
  - Brown, AS, Palmateer, SC, Wicks, GW, Eastman, LF, and Calawa, AR. "The behavior of unintentional impurities in Ga0.47 In0.53As grown by MBE." Journal of Electronic Materials 14, no. 3 (May 1985): 367-378. Full Text
  - Itoh, T, Brown, AS, Camnitz, LH, Wicks, GW, Berry, JD, and Eastman, LF. "RECESSED GATE Al//0 //. //4 //8 In//0 //. //5 //2 As/Ga//0 //. //4 //7 In//0 //. //5 //3 As MODULATION DOPED FIELD EFFECT TRANSISTOR." (1985): 92-101.
  - Brown, AS, Palmateer, SC, Wicks, GW, Eastman, LF, Calawa, AR, and Hitzman, C. "HEAT TREATMENT OF FE-DOPED INP SUBSTRATES FOR THE GROWTH OF HIGHER PURITY GA//0 //. //4 //7 IN//0 //. //5 //3 AS BY MBE." (1984): 36-40.
  - Brown, AS. "Dependence of electrical characteristics of MBE Ga0.47In0.53As planar doped barriers on InP substrates." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2, no. 2 (1984): 194-194. Full Text
  - Brown, AS, Henige, JA, Schmitz, AE, and Larson, LE. "Effect of growth conditions on the electrical and optical properties of AlxIn1−xAs (0.48<0.7)‐Ga0.47In0.53As heterostructures." Applied Physics Letters 62, no. 1 (January 4, 1993): 66-68. Full Text
  - Brown, AS, Henige, JA, and Delaney, MJ. "Photoluminescence broadening mechanisms in high quality GaInAs‐AlInAs quantum well structures." Applied Physics Letters 52, no. 14 (April 4, 1988): 1142-1143. Full Text
  - Hu, YP, Petroff, PM, Qian, X, and Brown, AS. "Substrate misorientation effects on the structure and electronic properties of GaInAs‐AlInAs interfaces." Applied Physics Letters 53, no. 22 (November 28, 1988): 2194-2196. Full Text
  - Palmateer, LF, Tasker, PJ, Itoh, T, Brown, AS, Wicks, GW, and Eastman, LF. "Microwave characterisation of 1 μm-gate AI0.48In0.52As/Ga0.47In0.53As/InP MODFETs." Electronics Letters 23, no. 1 (January 2, 1987): 53-55. Full Text
- Book Sections
  - Brown, AS, and Losurdo, M. "In Situ Characterization of Epitaxy." In Handbook of Crystal Growth: Thin Films and Epitaxy: Second Edition, 1169-1209. December 17, 2014. Full Text
  - Losurdo, M, Brown, AS, and Bruno, G. "Real-time ellipsometry for probing charge-transfer processes at the nanoscale." In Ellipsometry at the Nanoscale, 453-491. January 1, 2013. Full Text
- Conference Papers
  - Losurdo, M, Gutierrez, Y, Giangregorio, MM, Humlicek, J, Moreno, F, and Brown, A. "Multiphase gallium-based nanoparticles for a versatile plasmonic platform." January 1, 2018. Full Text
  - Brown, A, Ybarra, G, Massoud, H, Board, J, Holmes, J, Coonley, K, Collins, L, Huettel, L, Gustafson, M, and Cummer, S. "Redesign of the core curriculum at Duke University." January 1, 2006.
  - Brown, A, Ybarra, G, Massoud, H, Board, J, Holmes, J, Coonley, K, Collins, L, Huettel, L, Gustafson, M, and Cummer, S. "Redesign of the core curriculum at Duke University." 2006.
  - Huettel, L, Brown, A, Collins, L, Coonley, K, Gustafson, M, Kim, J, and Ybarra, G. "A novel introductory course for teaching the fundamentals of electrical and computer engineering." January 1, 2006.
  - Huettel, L, Brown, A, Collins, L, Coonley, K, Gustafson, M, Kim, J, and Ybarra, G. "A novel introductory course for teaching the fundamentals of electrical and computer engineering." 2006.
  - Collins, LM, Huettel, LG, Brown, AS, Ybarra, GA, Holmes, JS, Board, JA, Cummer, SA, Gustafson, MR, Kim, J, and Massoud, HZ. "Theme-based redesign of the duke university ECE curriculum: The first steps." 2005.
  - Huettel, L, Brown, A, Gustafson, M, Massoud, H, Ybarra, G, and Collins, L. "Work in progress: Theme-based redesign of an electrical and computer engineering curriculum." 2004.
  - Losurdo, M, Capezzuto, P, Bruno, G, Namkoong, G, Doolittle, WA, and Brown, AS. "Plasmas for the low-temperature growth of high-quality GaN films by molecular beam epitaxy and remote plasma MOCVD." March 1, 2002. Full Text
  - Triplett, G, May, G, and Brown, A. "Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks." January 1, 2001. Full Text
  - Brown, T, Lee, K, Dagnall, G, Kromann, R, Bicknell-Tassius, R, Brown, A, Dorsey, J, and May, G. "Modeling MBE RHEED signals using PCA and neural networks." January 1, 1997. Full Text
  - Mishra, UK, Brown, AS, and Rosenbaum, SE. "DC and RF performance of 0.1 μm gate length Al.48In.52As-Ga.38In.62As pseudomorphic HEMT's." December 1, 1988.
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