April S. Brown | Scholars@Duke

April S. Brown
Professor of Electrical and Computer Engineering

Dr. April Brown received her B.S.E.E. from North Carolina State University in 1981, her M.S.E.E. and Ph.D. from Cornell University in 1984 and 1985, respectively. She worked at the Hughes Research Laboratories (now HRL LLC) in Malibu, Ca. from 1986-1993, and spent one year at the Army Research Office in the Physics Division (1988). She joined the Georgia Institute of Technology in 1994 as an Associate Professor and was promoted to Professor in 1999. She was Associate Dean in the College of Engineering from 1999-2001 and Executive Assistant to the President from 2001-2002. In addition, she was named Pettit Professor in Microelectronics in 2001. She joined Duke University as Professor and Chair in July 2002.

Current Appointments & Affiliations

Professor of Electrical and Computer Engineering, Electrical and Computer Engineering, Pratt School of Engineering 2002

Contact Information

3573 CIEMAS, Box 90291, Durham, NC 27708
Box 90291, Durham, NC 27708-0291
abrown@ee.duke.edu (919) 660-5442

Background
Education, Training, & Certifications
- Ph.D., Cornell University 1985
Duke Appointment History
- Chair, Electrical and Computer Engineering, Pratt School of Engineering 2002 - 2007
Recognition
In the News
- AUG 4, 2016
  
  Perpetual 'Ice Water': Stable Solid-Liquid State Revealed in Nanoparticles
- JAN 20, 2015
  
  Pratt's April Brown to Lead U.S. Army in Engineering Science Research
Awards & Honors
Research
Selected Grants
- Quantum Systems Manufacturing Workshop awarded by National Science Foundation 2021 - 2022
- CEMRI: On Structured Interfaces awarded by University of Wisconsin 2011 - 2017
- GOALI: Realizing the Promise of III-N-Epitaxy Enabled by III-N Substates awarded by National Science Foundation 2012 - 2015
- Grant Expansion: Semiconductor Surface Modifications for Critical DoD Device Applications awarded by Office of Naval Research 2008 - 2013
- EAGER: A New Approach to Synthesizing Inorganic-Organic Interfaces awarded by National Science Foundation 2012 - 2013
- Synthesis of In-containing III-N Compounds by Molecular Beam Epitaxy awarded by Office of Naval Research 2008 - 2011
- Pilot Study Graduate Student Career Perceptions and Decisions awarded by National Science Foundation 2009 - 2010
- ADVANCE: Target of Opportunity Strategy awarded by National Science Foundation 2006 - 2010
- The Summit of NAE Grand Challenges awarded by Air Force Office of Scientific Research 2009 - 2010
- Sensor Material Design by Application Driven Optimization awarded by Army Research Office 2007 - 2010
- The Summit of NAE Grand Challenges awarded by Army Research Office 2009
- NIRT: Highly Integrated Optical Nanoparticle-Based Sensing Systems awarded by National Science Foundation 2004 - 2009
- Theme-based Redesign of the Duke ECE Undergraduate Curriculum at Duke University awarded by National Science Foundation 2004 - 2008
- Fundamental Studies of GaN HFET Synthesis on SiC awarded by Office of Naval Research 2005 - 2008
- In Vacuo X-Ray and Ultraviolet Photoelectron Spectroscopy Analytical System awarded by Army Research Office 2007 - 2008
- Duke Robotics Autonomous Wall-Climbing Robot awarded by Lord Foundation of North Carolina 2004 - 2006
- EGR 20 Engineering Innovation awarded by Lord Foundation of North Carolina 2004 - 2006
- Molecular Beam Epitaxy of GaN on SiC awarded by Office of Naval Research 2003 - 2005
- Duke Robotics Tandem Vectored-Thruster Design for an Autonomous Underwater Vehicle awarded by Lord Foundation of North Carolina 2003 - 2005
- Fabrication, Ultrafast Measurement, and Modeling of Optoelectronic Nanostructures awarded by Lord Foundation of North Carolina 2003 - 2005
- Initiating an Embedded Systems Design Laboratory awarded by Lord Foundation of North Carolina 2003 - 2005
- Integrated Blood Chemistry Lab-On-A-Chip awarded by Lord Foundation of North Carolina 2003 - 2005
- DURIP Equipment Request: A Streak Camera for Time-Resolved Photoluminescence Characterization of Wide Bandgap Semiconductor Heterostructures and Nanostructures awarded by Air Force Office of Scientific Research 2003 - 2004
Publications & Artistic Works
Selected Publications
- Academic Articles
  - Losurdo, Maria, Yael Gutiérrez, Alexandra Suvorova, Maria M. Giangregorio, Sergey Rubanov, April S. Brown, and Fernando Moreno. “Gallium Plasmonic Nanoantennas Unveiling Multiple Kinetics of Hydrogen Sensing, Storage, and Spillover.” Advanced Materials (Deerfield Beach, Fla.) 33, no. 29 (July 2021): e2100500. https://doi.org/10.1002/adma.202100500.
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  - Aprile, E., J. Aalbers, F. Agostini, M. Alfonsi, F. D. Amaro, M. Anthony, F. Arneodo, et al. “Signal yields of keV electronic recoils and their discrimination from nuclear recoils in liquid xenon.” Physical Review D 97, no. 9 (May 1, 2018). https://doi.org/10.1103/PhysRevD.97.092007.
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  - Collar, Kristen N., Jincheng Li, Wenyuan Jiao, Wei Kong, and April S. Brown. “Unidirectional lateral nanowire formation during the epitaxial growth of GaAsBi on vicinal substrates.” Nanotechnology 29, no. 3 (January 2018): 035604. https://doi.org/10.1088/1361-6528/aa9e34.
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  - Collar, K., J. Li, W. Jiao, Y. Guan, M. Losurdo, J. Humlicek, and A. S. Brown. “Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy.” Aip Advances 7, no. 7 (July 1, 2017). https://doi.org/10.1063/1.4986751.
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  - Kong, W., A. T. Roberts, W. Y. Jiao, J. Fournelle, T. H. Kim, M. Losurdo, H. O. Everitt, and A. S. Brown. “UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy.” Aip Advances 7, no. 3 (March 1, 2017). https://doi.org/10.1063/1.4973637.
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  - Losurdo, Maria, Alexandra Suvorova, Sergey Rubanov, Kurt Hingerl, and April S. Brown. “Thermally stable coexistence of liquid and solid phases in gallium nanoparticles.” Nature Materials 15, no. 9 (September 2016): 995–1002. https://doi.org/10.1038/nmat4705.
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  - Jiao, W., W. Kong, J. Li, K. Collar, T. H. Kim, M. Losurdo, and A. S. Brown. “The characteristics of MBE-grown InxAl1-xN/GaN surface states.” Applied Physics Letters 109, no. 8 (August 22, 2016). https://doi.org/10.1063/1.4961583.
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  - Li, J., K. Collar, W. Jiao, W. Kong, T. F. Kuech, S. E. Babcock, and A. Brown. “Impact of vicinal GaAs(001) substrates on Bi incorporation and photoluminescence in molecular beam epitaxy-grown GaAs1-xBix.” Applied Physics Letters 108, no. 23 (June 6, 2016). https://doi.org/10.1063/1.4953408.
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  - Jiao, W., W. Kong, J. Li, K. Collar, T. H. Kim, M. Losurdo, and A. S. Brown. “Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying in composition.” Aip Advances 6, no. 3 (March 1, 2016). https://doi.org/10.1063/1.4944502.
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  - Wood, Adam W., Kristen Collar, Jincheng Li, April S. Brown, and Susan E. Babcock. “Droplet-mediated formation of embedded GaAs nanowires in MBE GaAs(1-x)Bi(x) films.” Nanotechnology 27, no. 11 (March 2016): 115704. https://doi.org/10.1088/0957-4484/27/11/115704.
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  - Kong, W., W. Y. Jiao, J. C. Li, K. Collar, J. H. Leach, J. H. Fournelle, T. H. Kim, and A. S. Brown. “Structural Characterization of the Nanocolumnar Microstructure of InAlN (Accepted).” Journal of Electronic Materials, November 6, 2015. https://doi.org/10.1007/s11664-015-4167-9.
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  - Kong, W., A. T. Roberts, W. Y. Jiao, J. Fournelle, T. H. Kim, M. Losurdo, H. O. Everitt, and A. S. Brown. “Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy.” Applied Physics Letters 107, no. 13 (September 28, 2015). https://doi.org/10.1063/1.4931942.
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  - Giangregorio, M. M., W. Jiao, G. V. Bianco, P. Capezzuto, A. S. Brown, G. Bruno, and M. Losurdo. “Insights into the effects of metal nanostructuring and oxidation on the work function and charge transfer of metal/graphene hybrids.” Nanoscale 7, no. 30 (August 2015): 12868–77. https://doi.org/10.1039/c5nr02610e.
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  - Brown, A. S., and A. J. Ptak. “Preface of the 18th International Conference on Molecular Beam Epitaxy (MBE 2014).” Journal of Crystal Growth 425 (July 28, 2015): 1. https://doi.org/10.1016/j.jcrysgro.2015.06.001.
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  - Kong, W., W. Y. Jiao, J. C. Li, K. Collar, T. H. Kim, J. H. Leach, and A. S. Brown. “Effect of strain in sputtered AlN buffer layers on the growth of GaN by molecular beam epitaxy.” Applied Physics Letters 107, no. 3 (July 20, 2015). https://doi.org/10.1063/1.4927245.
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  - Luo, G., S. Yang, J. Li, M. Arjmand, I. Szlufarska, A. S. Brown, T. F. Kuech, and D. Morgan. “First-principles studies on molecular beam epitaxy growth of GaA s1-x B ix.” Physical Review B Condensed Matter and Materials Physics 92, no. 3 (July 14, 2015). https://doi.org/10.1103/PhysRevB.92.035415.
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  - Li, J., K. Forghani, Y. Guan, W. Jiao, W. Kong, K. Collar, T. H. Kim, T. F. Kuech, and A. S. Brown. “GaAs1-yBiy Raman signatures: Illuminating relationships between the electrical and optical properties of GaAs1-yBiy and Bi incorporation.” Aip Advances 5, no. 6 (June 1, 2015). https://doi.org/10.1063/1.4922139.
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  - Wood, A. W., S. E. Babcock, J. Li, and A. S. Brown. “Increased bismuth concentration in MBE GaAs1-xBix films by oscillating III/V flux ratio during growth.” Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 33, no. 3 (May 1, 2015). https://doi.org/10.1116/1.4916575.
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  - Knight, Mark W., Toon Coenen, Yang Yang, Benjamin J. M. Brenny, Maria Losurdo, April S. Brown, Henry O. Everitt, and Albert Polman. “Gallium plasmonics: deep subwavelength spectroscopic imaging of single and interacting gallium nanoparticles.” Acs Nano 9, no. 2 (February 6, 2015): 2049–60. https://doi.org/10.1021/nn5072254.
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  - Kong, W., A. Mohanta, A. T. Roberts, W. Y. Jiao, J. Fournelle, T. H. Kim, M. Losurdo, H. O. Everitt, and A. S. Brown. “Room temperature photoluminescence from InxAl(1-x)N films deposited by plasma-assisted molecular beam epitaxy.” Applied Physics Letters 105, no. 13 (September 29, 2014). https://doi.org/10.1063/1.4896849.
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  - Forghani, K., Y. Guan, M. Losurdo, G. Luo, D. Morgan, S. E. Babcock, A. S. Brown, L. J. Mawst, and T. F. Kuech. “GaAs1-y-zPyBiz, an alternative reduced band gap alloy system lattice-matched to GaAs.” Applied Physics Letters 105, no. 11 (September 15, 2014). https://doi.org/10.1063/1.4895116.
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  - Li, J., T. H. Kim, K. Forghani, W. Jiao, W. Kong, K. Collar, T. F. Kuech, and A. S. Brown. “Growth of GaAs1-xBix by molecular beam epitaxy: Trade-offs in optical and structural characteristics.” Journal of Applied Physics 116, no. 4 (July 28, 2014). https://doi.org/10.1063/1.4891874.
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  - Yang, Y., N. Akozbek, T. H. Kim, J. M. Sanz, F. Moreno, M. Losurdo, A. S. Brown, and H. O. Everitt. “Ultraviolet-Visible Plasmonic Properties of Gallium Nanoparticles Investigated by Variable-Angle Spectroscopic and Mueller Matrix Ellipsometry.” Acs Photonics 1, no. 7 (July 16, 2014): 582–89. https://doi.org/10.1021/ph500042v.
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  - Ahmed, Minhaz Uddin, Ishtiaq Saaem, Pae C. Wu, and April S. Brown. “Personalized diagnostics and biosensors: a review of the biology and technology needed for personalized medicine.” Critical Reviews in Biotechnology 34, no. 2 (June 2014): 180–96. https://doi.org/10.3109/07388551.2013.778228.
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  - Losurdo, M., I. Bergmair, B. Dastmalchi, T. H. Kim, M. M. Giangregroio, W. Jiao, G. V. Bianco, A. S. Brown, K. Hingerl, and G. Bruno. “Graphene as an electron shuttle for silver deoxidation: Removing a key barrier to plasmonics and metamaterials for sers in the visible.” Advanced Functional Materials 24, no. 13 (April 2, 2014): 1864–78. https://doi.org/10.1002/adfm.201303135.
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  - Losurdo, Maria, Congwen Yi, Alexandra Suvorova, Sergey Rubanov, Tong-Ho Kim, Maria M. Giangregorio, Wenyuan Jiao, Iris Bergmair, Giovanni Bruno, and April S. Brown. “Demonstrating the capability of the high-performance plasmonic gallium-graphene couple.” Acs Nano 8, no. 3 (March 4, 2014): 3031–41. https://doi.org/10.1021/nn500472r.
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  - Zhong, M., J. Roberts, W. Kong, A. S. Brown, and A. J. Steckl. “P-type GaN grown by phase shift epitaxy.” Applied Physics Letters 104, no. 1 (January 6, 2014). https://doi.org/10.1063/1.4861058.
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  - Sanz, J. M., D. Ortiz, R. Alcaraz de la Osa, J. M. Saiz, F. González, A. S. Brown, M. Losurdo, H. O. Everitt, and F. Moreno. “Metals for UV plasmonics.” Optics Infobase Conference Papers, January 1, 2014.
  - Jiao, W., W. Kong, J. Li, K. Collar, T. H. Kim, and A. S. Brown. “The relationship between depth-resolved composition and strain relaxation in InAlN and InGaN films grown by molecular beam epitaxy.” Applied Physics Letters 103, no. 16 (October 14, 2013). https://doi.org/10.1063/1.4825143.
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  - Sanz, J. M., D. Ortiz, R. Alcaraz De La Osa, J. M. Saiz, F. González, A. S. Brown, M. Losurdo, H. O. Everitt, and F. Moreno. “UV plasmonic behavior of various metal nanoparticles in the near- and far-field regimes: Geometry and substrate effects.” Journal of Physical Chemistry C 117, no. 38 (September 26, 2013): 19606–15. https://doi.org/10.1021/jp405773p.
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  - Ahmed, M. U., A. S. Brown, and P. C. Wu. “Point-of-Care Devices” 1 (August 29, 2013): 372–80. https://doi.org/10.1016/B978-0-12-382227-7.00032-X.
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  - Yang, Yang, John M. Callahan, Tong-Ho Kim, April S. Brown, and Henry O. Everitt. “Ultraviolet nanoplasmonics: a demonstration of surface-enhanced Raman spectroscopy, fluorescence, and photodegradation using gallium nanoparticles.” Nano Letters 13, no. 6 (June 2013): 2837–41. https://doi.org/10.1021/nl401145j.
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  - Kuech, Thomas F., Luke J. Mawst, and April S. Brown. “Mixed semiconductor alloys for optical devices.” Annual Review of Chemical and Biomolecular Engineering 4 (January 2013): 187–209. https://doi.org/10.1146/annurev-chembioeng-061312-103359.
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  - Losurdo, M., I. Bergmair, B. Dastmalchi, T. -. H. Kim, M. M. Giangregroio, W. Jiao, G. V. Bianco, A. S. Brown, K. Hingerl, and G. Bruno. “Graphene as an Electron Shuttle for Silver Deoxidation: Removing a Key Barrier to Plasmonics and Metamaterials for SERS in the Visible.” Advanced Functional Materials, 2013.
  - Li, Baolei, Yingwen Cheng, Jie Liu, Congwen Yi, April S. Brown, Hsiangkuo Yuan, Tuan Vo-Dinh, Martin C. Fischer, and Warren S. Warren. “Direct Optical Imaging of Graphene In Vitro by Nonlinear Femtosecond Laser Spectral Reshaping.” Nano Letters 12, no. 11 (November 14, 2012): 5936–40. https://doi.org/10.1021/nl303358p.
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  - Yi, Congwen, Tong-Ho Kim, Wenyuan Jiao, Yang Yang, Anne Lazarides, Kurt Hingerl, Giovanni Bruno, April Brown, and Maria Losurdo. “Evidence of plasmonic coupling in gallium nanoparticles/graphene/SiC.” Small (Weinheim an Der Bergstrasse, Germany) 8, no. 17 (September 2012): 2721–30. https://doi.org/10.1002/smll.201200694.
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  - Cho, EunKyung, April Brown, and Thomas F. Kuech. “Chemical characterization of DNA-immobilized InAs surfaces using X-ray photoelectron spectroscopy and near-edge X-ray absorption fine structure.” Langmuir : The Acs Journal of Surfaces and Colloids 28, no. 32 (August 2012): 11890–98. https://doi.org/10.1021/la302313v.
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  - Bianco, G. V., M. M. Giangregorio, P. Capezzuto, M. Losurdo, T. H. Kim, A. S. Brown, and G. Bruno. “Plasma-plasmonics synergy in the Ga-catalyzed growth of Si-nanowires.” Materials Science and Engineering B: Solid State Materials for Advanced Technology 177, no. 10 (June 5, 2012): 700–704. https://doi.org/10.1016/j.mseb.2011.09.030.
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  - Kim, T. H., M. Losurdo, S. Choi, I. Yoon, G. Bruno, and A. Brown. “Real-time studies of In-adlayer during PAMBE of InGaN/GaN MQWs.” Physica Status Solidi (C) Current Topics in Solid State Physics 9, no. 3–4 (March 1, 2012): 1036–39. https://doi.org/10.1002/pssc.201100072.
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  - Dedigama, A., M. Angelo, P. Torrione, T. H. Kim, S. Wolter, W. Lampert, A. Atewologun, et al. “Hemin-functionalized InAs-based high sensitivity room temperature NO gas sensors.” Journal of Physical Chemistry C 116, no. 1 (January 12, 2012): 826–33. https://doi.org/10.1021/jp2086889.
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  - Losurdo, Maria, Pae C. Wu, Tong-Ho Kim, Giovanni Bruno, and April S. Brown. “Cysteamine-based functionalization of InAs surfaces: revealing the critical role of oxide interactions in biasing attachment.” Langmuir : The Acs Journal of Surfaces and Colloids 28, no. 2 (January 2012): 1235–45. https://doi.org/10.1021/la203436r.
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  - McKay, K. S., F. P. Lu, J. Kim, C. Yi, A. S. Brown, and A. R. Hawkins. “Erratum: Band discontinuity measurements of the wafer bonded InGaAs/Si heterojunction (Applied Physics Letters (2007) 90 (222111)).” Applied Physics Letters 100, no. 12 (2012). https://doi.org/10.1063/1.3696305.
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  - Cho, E. K., P. Wu, M. Ahmed, A. Brown, and T. F. Kuech. “Characterization of immobilized DNA on sulfur-passivated InAs surfaces.” Materials Research Society Symposium Proceedings 1301 (December 1, 2011): 259–65. https://doi.org/10.1557/opl.2011.75.
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  - Albella, Pablo, Borja Garcia-Cueto, Francisco González, Fernando Moreno, Pae C. Wu, Tong-Ho Kim, April Brown, Yang Yang, Henry O. Everitt, and Gorden Videen. “Shape matters: plasmonic nanoparticle shape enhances interaction with dielectric substrate.” Nano Letters 11, no. 9 (September 2011): 3531–37. https://doi.org/10.1021/nl201783v.
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  - Wu, P. C., M. Losurdo, T. H. Kim, B. Garcia-Cueto, F. Moreno, G. Bruno, and A. S. Brown. “Ga-Mg Core-shell nanosystem for a novel full color plasmonics.” Journal of Physical Chemistry C 115, no. 28 (July 21, 2011): 13571–76. https://doi.org/10.1021/jp201423r.
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  - Ruffin, P. B., C. L. Brantley, E. Edwards, J. K. Roberts, W. Chew, L. C. Warren, P. R. Ashley, et al. “Nanotechnology research and development for military and industrial applications.” Proceedings of Spie the International Society for Optical Engineering 7980 (May 23, 2011). https://doi.org/10.1117/12.878970.
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  - Wu, Pae C., Tong-Ho Kim, Alexandra Suvorova, Maria Giangregorio, Martin Saunders, Giovanni Bruno, April S. Brown, and Maria Losurdo. “GaMg alloy nanoparticles for broadly tunable plasmonics.” Small (Weinheim an Der Bergstrasse, Germany) 7, no. 6 (March 2011): 751–56. https://doi.org/10.1002/smll.201002064.
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  - Bruno, G., M. Losurdo, T. H. Kim, and A. Brown. “Adsorption and desorption kinetics of Ga on GaN(0001): Application of Wolkenstein theory.” Physical Review B Condensed Matter and Materials Physics 82, no. 7 (August 26, 2010). https://doi.org/10.1103/PhysRevB.82.075326.
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  - Wu, Pae C., Christopher G. Khoury, Tong-Ho Kim, Yang Yang, Maria Losurdo, Giuseppe V. Bianco, Tuan Vo-Dinh, April S. Brown, and Henry O. Everitt. “Demonstration of surface-enhanced Raman scattering by tunable, plasmonic gallium nanoparticles.” Journal of the American Chemical Society 131, no. 34 (September 2009): 12032–33. https://doi.org/10.1021/ja903321z.
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  - Losurdo, M., M. M. Giangregorio, F. Lisco, P. Capezzuto, G. Bruno, S. D. Wolter, M. Angelo, and A. Brown. “InAs(100) surfaces cleaning by an As-Free low-temperature 100°C treatment.” Journal of the Electrochemical Society 156, no. 4 (March 4, 2009). https://doi.org/10.1149/1.3076194.
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  - Choi, S., T. H. Kim, P. Wu, A. Brown, H. O. Everitt, M. Losurdo, and G. Bruno. “Band bending and adsorption/desorption kinetics on N-polar GaN surfaces.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 27, no. 1 (February 17, 2009): 107–12. https://doi.org/10.1116/1.3054345.
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  - Di Franco, Cinzia, Angela Elia, Vincenzo Spagnolo, Gaetano Scamarcio, Pietro Mario Lugarà, Eliana Ieva, Nicola Cioffi, et al. “Optical and Electronic NO(x) Sensors for Applications in Mechatronics.” Sensors (Basel, Switzerland) 9, no. 5 (January 2009): 3337–56. https://doi.org/10.3390/s90503337.
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  - Wu, P. C., M. Losurdo, T. H. Kim, M. Giangregorio, G. Bruno, H. O. Everitt, and A. S. Brown. “Plasmonic Gallium Nanoparticles on Polar Semiconductors: Interplay between Nanoparticle Wetting, Localized Surface Plasmon Dynamics, and Interface Charge.” Langmuir 25, no. 2 (January 2009): 924–30.
  - Losurdo, M., S. D. Wolter, M. M. Giangregorio, F. Lisco, M. Angelo, W. V. Lampert, G. Bruno, and A. Brown. “Interplay between surface chemistry and optical behavior of semiconductor-biomolecule functionalized sensing systems: An optical investigation by spectroscopic ellipsometry.” Materials Research Society Symposium Proceedings 1133 (December 1, 2008): 19–24.
  - Huang, S., P. F. Huang, Z. C. Feng, A. Brown, and W. Lu. “Optical and material characteristics of InAs/GaAs quantum dots.” Proceedings of Spie the International Society for Optical Engineering 7039 (November 21, 2008). https://doi.org/10.1117/12.795580.
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  - Garcia, M. A., M. Losurdo, S. D. Wolter, W. V. Lampert, J. Bonaventura, G. Bruno, C. Yi, and A. S. Brown. “Comparison of functionalized III-V semiconductor response for nitric oxide.” Sensor Letters 6, no. 4 (August 1, 2008): 627–34. https://doi.org/10.1166/sl.2008.448.
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  - Choi, S., T. H. Kim, S. Wolter, A. Brown, H. O. Everitt, M. Losurdo, and G. Bruno. “Indium adlayer kinetics on the gallium nitride (0001) surface: Monitoring indium segregation and precursor-mediated adsorption.” Physical Review B Condensed Matter and Materials Physics 77, no. 11 (March 20, 2008). https://doi.org/10.1103/PhysRevB.77.115435.
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  - Pettinari, G., F. Masia, M. Capizzi, A. Polimeni, M. Losurdo, G. Bruno, T. H. Kim, et al. “Experimental evidence of different hydrogen donors in n -type InN.” Physical Review B Condensed Matter and Materials Physics 77, no. 12 (March 11, 2008). https://doi.org/10.1103/PhysRevB.77.125207.
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  - Wu, P. C., M. Losurdo, T. H. Kim, G. Bruno, A. S. Brown, and H. O. Everitt. “Novel, real-time measurement of plasmon resonance - tailoring nanoparticle geometry optically.” Optics Infobase Conference Papers, January 1, 2008.
  - Wu, P. C., M. Losurdo, T. H. Kim, G. Bruno, A. S. Brown, and H. O. Everitt. “Novel, real-time measurement of plasmon resonance - tailoring nanoparticle geometry optically.” Optics Infobase Conference Papers, January 1, 2008.
  - Wu, B., D. Wheeler, C. Yi, I. Yoon, S. Jha, A. Brown, T. Kuech, P. Fay, and A. Seabaugh. “InAs growth on submicron (100) SOI islands for InAs-Si composite channel MOSFETs.” 2007 International Semiconductor Device Research Symposium, Isdrs, December 1, 2007. https://doi.org/10.1109/ISDRS.2007.4422233.
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  - Losurdo, M., M. M. Giangregorio, G. Bruno, T. H. Kim, S. Choi, A. S. Brown, G. Pettinari, M. Capizzi, and A. Polimeni. “Behavior of hydrogen in InN investigated in real time exploiting spectroscopic ellipsometry.” Applied Physics Letters 91, no. 8 (August 31, 2007). https://doi.org/10.1063/1.2775082.
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  - Garcia, M. A., M. Losurdo, S. D. Wolter, T. H. Kim, W. V. Lampert, J. Bonaventura, G. Bruno, M. Giangregorio, and A. Brown. “Functionalization and characterization of InAs and InP surfaces with hemin.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 25, no. 4 (August 7, 2007): 1504–10. https://doi.org/10.1116/1.2746337.
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  - Choi, S., T. H. Kim, H. O. Everitt, A. Brown, M. Losurdo, G. Bruno, and A. Moto. “Kinetics of gallium adlayer adsorption/desorption on polar and nonpolar GaN surfaces.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 25, no. 3 (June 11, 2007): 969–73. https://doi.org/10.1116/1.2720856.
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  - Losurdo, M., T. H. Kim, S. Choi, P. Wu, M. M. Giangregorio, G. Bruno, and A. Brown. “Real time optical monitoring of molecular beam epitaxy of InN on SiC substrates.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 25, no. 3 (June 11, 2007): 1014–18. https://doi.org/10.1116/1.2737433.
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  - Zhang, W., C. Yi, and A. Brown. “Impact of arsenic species (As2 As4) on the relaxation and morphology of step-graded in Asx P1-x on InP substrates.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 25, no. 3 (June 11, 2007): 960–63. https://doi.org/10.1116/1.2717197.
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  - Uhlrich, J., M. Garcia, S. Wolter, A. S. Brown, and T. F. Kuech. “Interfacial chemistry and energy band line-up of pentacene with the GaN (0 0 0 1) surface.” Journal of Crystal Growth 300, no. 1 (March 1, 2007): 204–11. https://doi.org/10.1016/j.jcrysgro.2006.11.035.
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  - Losurdo, M., M. M. Giangregorio, G. Bruno, T. H. Kim, P. Wu, S. Choi, A. Brown, F. Masia, M. Capizzi, and A. Polimeni. “Characteristics of InN grown on SiC under the In-rich regime by molecular beam heteroepitaxy.” Applied Physics Letters 90, no. 1 (January 15, 2007). https://doi.org/10.1063/1.2424664.
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  - Huettel, L. G., A. S. Brown, K. D. Coonley, M. R. Gustafson, J. Kim, G. A. Ybarra, and L. M. Collins. “Fundamentals of ECE: A rigorous, integrated introduction to electrical and computer engineering.” Ieee Transactions on Education 50, no. 3 (2007): 174–81. https://doi.org/10.1109/TE.2007.900020.
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  - McKay, K. S., F. P. Lu, J. Kim, C. Yi, A. S. Brown, and A. R. Hawkins. “Band discontinuity measurements of the wafer bonded InGaAsSi heterojunction.” Applied Physics Letters 90, no. 22 (2007). https://doi.org/10.1063/1.2745254.
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  - Wu, P. C., M. Losurdo, T. H. Kim, O. Choi, G. Bruno, and A. S. Brown. “In situ spectroscopic ellipsometry to monitor surface plasmon resonant group-III metals deposited by molecular beam epitaxy.” Journal of Vacuum Science \& Technology B 25, no. 3 (2007): 1019–23.
  - Wu, Pae C., Tong-Ho Kim, April S. Brown, Maria Losurdo, Giovanni Bruno, and Henry O. Everitt. “Real-time plasmon resonance tuning of liquid Ga nanoparticles by in situ spectroscopic ellipsometry.” Applied Physics Letters 90, no. 10 (2007): 103119. https://doi.org/10.1063/1.2712508.
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  - Yoon, I., C. Yi, T. Kirn, A. S. Brown, and A. Seabaugh. “Effect of surface pretreatment and substrate orientation on the characteristics of InAs quantum dots on Si and SiO2 substrates.” Journal of Vacuum Science \& Technology B 25, no. 3 (2007): 945–47.
  - Choi, S., T. H. Kim, A. Brown, H. O. Everitt, M. Losurdo, G. Bruno, and A. Moto. “Kinetics of gallium adsorption and desorption on (0001) gallium nitride surfaces.” Applied Physics Letters 89, no. 18 (November 13, 2006). https://doi.org/10.1063/1.2372744.
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  - Bruno, G., M. Losurdo, M. M. Giangregorio, P. Capezzuto, A. S. Brown, T. H. Kim, and S. Choi. “Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN.” Applied Surface Science 253, no. 1 SPEC. ISS. (October 31, 2006): 219–23. https://doi.org/10.1016/j.apsusc.2006.05.129.
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  - Morse, M., P. Wu, S. Choi, T. H. Kim, A. S. Brown, M. Losurdo, and G. Bruno. “Structural and optical characterization of GaN heteroepitaxial films on SiC substrates.” Applied Surface Science 253, no. 1 SPEC. ISS. (October 31, 2006): 232–35. https://doi.org/10.1016/j.apsusc.2006.05.097.
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  - Bruno, G., M. Losurdo, M. M. Giangregorio, P. Capezzuto, A. S. Brown, T. H. Kim, and S. Choi. “Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN.” Applied Surface Science 253, no. 1 (October 2006): 219–23.
  - Morse, M., P. Wu, S. Choi, T. H. Kim, A. S. Brown, M. Losurdo, and G. Bruno. “Structural and optical characterization of GaN heteroepitaxial films on SiC substrates.” Applied Surface Science 253, no. 1 (October 2006): 232–35.
  - Brown, A. S., T. H. Kim, S. Choi, P. Wu, M. Morse, M. Losurdo, M. M. Giangregorio, G. Bruno, and A. Moto. “Growth of InN on 6H-SiC by plasma assisted molecular beam epitaxy.” Physica Status Solidi (C) Current Topics in Solid State Physics 3 (July 31, 2006): 1531–35. https://doi.org/10.1002/pssc.200565150.
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  - Kim, T. H., S. Choi, P. Wu, A. Brown, M. Losurdo, M. M. Giangregorio, G. Bruno, and A. Moto. “Real time spectroscopic ellipsometry investigation of homoepitaxial GaN grown by plasma assisted molecular beam epitaxy.” Physica Status Solidi (C) Current Topics in Solid State Physics 3 (July 31, 2006): 1583–86. https://doi.org/10.1002/pssc.200565207.
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  - Triplett, G. E., A. S. Brown, and G. S. May. “Strain monitoring in InAs-Al xGa 1-xAS ySb 1-y structures grown by molecular beam epitaxy.” Applied Physics Letters 89, no. 3 (July 28, 2006). https://doi.org/10.1063/1.2226998.
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  - Losurdo, M., P. Capezzuto, G. Bruno, A. S. Brown, T. Brown, and G. May. “Fundamental reactions controlling anion exchange during mixed anion heterojunction formation: Chemistry of As-for-Sb and Sb-for-As exchange reactions.” Journal of Applied Physics 100, no. 1 (July 26, 2006). https://doi.org/10.1063/1.2216049.
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  - Kim, T. H., S. Choi, A. S. Brown, M. Losurdo, and G. Bruno. “Impact of 4H- And 6H-SiC(0001) nitridation on Ga wetting layer development and GaN growth by molecular beam epitaxy.” Applied Physics Letters 89, no. 2 (July 24, 2006). https://doi.org/10.1063/1.2220007.
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  - Triplett, G. E., A. S. Brown, and G. S. May. “Strain monitoring in InAs-AlxGa1-xAsySb1-y structures grown by molecular beam epitaxy.” Applied Physics Letters 89, no. 3 (July 2006): 345–49.
  - Losurdo, M., M. M. Giangregorio, G. Bruno, T. H. Kim, P. Wu, S. Choi, M. Morse, et al. “Modification of InN properties by interactions with hydrogen and nitrogen.” Materials Research Society Symposium Proceedings 892 (May 15, 2006): 155–60.
  - Brown, A. S., M. Losurdo, P. Capezzuto, G. Bruno, T. Brown, and G. May. “Fundamental reactions controlling anion exchange during mixed anion heterojunction formation: Chemistry and kinetics of P-for-As exchange reaction.” Journal of Applied Physics 99, no. 9 (May 1, 2006). https://doi.org/10.1063/1.2194126.
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  - Losurdo, M., M. M. Giangregorio, G. Bruno, T. H. Kim, S. Choi, and A. Brown. “Buffer free MOCVD growth of GaN on 4H-SiC: Effect of substrate treatments and UV-photoirradiation.” Physica Status Solidi (A) Applications and Materials Science 203, no. 7 (May 1, 2006): 1607–11. https://doi.org/10.1002/pssa.200565154.
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  - Losurdo, M., G. Bruno, T. H. Kim, S. Choi, and A. Brown. “Study of the dielectric function of hexagonal InN: Impact of indium clusters and of native oxide.” Applied Physics Letters 88, no. 12 (March 20, 2006). https://doi.org/10.1063/1.2190461.
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  - Triplett, G. E., A. S. Brown, and G. S. May. “Interrelationships in the electronic and structural characteristics of strained InAs quantum well structures.” Journal of Crystal Growth 286, no. 2 (January 15, 2006): 345–49. https://doi.org/10.1016/j.jcrysgro.2005.10.098.
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  - Yi, C., T. H. Kim, and A. S. Brown. “InAs-based p-n homojunction diodes: Doping effects and impact of doping on device parameters.” Journal of Electronic Materials 35, no. 9 (January 1, 2006): 1712–14. https://doi.org/10.1007/s11664-006-0223-9.
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  - Garcia, M. A., S. D. Wolter, Tong-Ho Kim, Soojeong Choi, J. Baier, A. Brown, M. Losurdo, and G. Bruno. “Surface oxide relationships to band bending in GaN.” Appl. Phys. Lett. (Usa) 88, no. 1 (2006). https://doi.org/10.1063/1.2158701.
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  - Kim, T. H., S. Choi, M. Morse, P. Wu, C. Yi, A. Brown, M. Losurdo, M. M. Giangregorio, and G. Bruno. “Impact of unintentional and intentional nitridation of the 6H-SiC(0001)Si substrate on GaN epitaxy.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 23, no. 3 (December 1, 2005): 1181–85. https://doi.org/10.1116/1.1878997.
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  - Brown, A. S., M. Losurdo, T. H. Kim, M. M. Giangregorio, S. Choi, M. Morse, P. Wu, P. Capezzuto, and G. Bruno. “The impact of SiC substrate treatment on the heteroepitaxial growth of GaN by plasma assisted MBE.” Crystal Research and Technology 40, no. 10–11 (November 1, 2005): 997–1002. https://doi.org/10.1002/crat.200410475.
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  - Losurdo, M., G. Bruno, T. H. Kim, S. Choi, A. Brown, and A. Moto. “Nucleation and growth mode of the molecular beam epitaxy of GaN on 4H-SiC exploiting real time spectroscopic ellipsometry.” Journal of Crystal Growth 284, no. 1–2 (October 15, 2005): 156–65. https://doi.org/10.1016/j.jcrysgro.2005.07.016.
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  - Losurdo, M., M. M. Giangregorio, P. Capezzuto, G. Bruno, T. H. Kim, S. Choi, and A. Brown. “Remote plasma assisted MOCVD growth of GaN on 4H-SiC: Growth mode characterization exploiting ellipsometry.” Epj Applied Physics 31, no. 3 (September 1, 2005): 159–64. https://doi.org/10.1051/epjap:2005056.
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  - Seo, S. W., S. Y. Cho, S. Huang, N. M. Jokerst, and A. S. Brown. “Pulse response tuning of high speed InGaAs thin film MSM photodetector using external RCL loads.” Proceedings of Spie the International Society for Optical Engineering 5726 (July 21, 2005): 52–60. https://doi.org/10.1117/12.592246.
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  - Losurdo, M., P. Capezzuto, G. Bruno, A. Brown, T. H. Kim, C. Yi, D. N. Zakharov, and Z. Liliental-Weber. “Interfacial reactions during GaN and AiN epitaxy on 4H- and 6H-SiC(0001).” Applied Physics Letters 86, no. 2 (January 10, 2005). https://doi.org/10.1063/1.1852703.
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  - Brown, A. S. “Flat, cheap, and under control [electrochemical mechanical planarization].” Ieee Spectrum 42, no. 1 (January 2005): 40–45. https://doi.org/10.1109/mspec.2005.1377874.
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  - Losurdo, M., M. M. Giangregorio, P. Capezzuto, G. Bruno, A. S. Brown, T. H. Kim, and C. Yi. “Modification of 4H-SiC and 6H-SiC(0001)Si surfaces through the interaction with atomic hydrogen and nitrogen.” Journal of Electronic Materials 34, no. 4 (January 1, 2005): 457–65. https://doi.org/10.1007/s11664-005-0127-0.
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  - Seo, S. W., C. Cha, S. Y. Cho, S. Huang, N. M. Jokerst, M. A. Brooke, and A. S. Brown. “Etch enhanced low capacitance, large area thin film InGaAs metal-semiconductor-metal photodetectors.” Conference Proceedings Lasers and Electro Optics Society Annual Meeting Leos 1 (December 1, 2004): 222–23.
  - Song, I., S. W. Seo, S. Hyun, D. Kim, S. Huang, M. Brooke, N. M. Jokerst, and A. Brown. “A 10 Gbit/s Si CMOS transimpedance amplifier with an integrated MSM photodetector for optical interconnections.” Conference Proceedings Lasers and Electro Optics Society Annual Meeting Leos 2 (December 1, 2004): 517–18.
  - Losurdo, M., M. M. Giangregorio, G. Bruno, A. Brown, and T. H. Kim. “Study of the interaction of 4H-SiC and 6H-SiC(0001)Si surfaces with atomic nitrogen.” Applied Physics Letters 85, no. 18 (November 1, 2004): 4034–36. https://doi.org/10.1063/1.1814438.
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  - Seo, S. W., S. Y. Cho, S. Huang, A. S. Brown, and N. M. Jokerst. “High speed InGaAs thin film MSM photodetector characterization using a fiber-based electro-optic sampling system.” Proceedings of Spie the International Society for Optical Engineering 5353 (August 17, 2004): 48–56. https://doi.org/10.1117/12.531681.
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  - Losurdo, M., M. M. Giangregorio, P. Capezzuto, G. Bruno, G. Namkoong, W. A. Doolittle, and A. S. Brown. “Interaction of GaN epitaxial layers with atomic hydrogen.” Applied Surface Science 235, no. 3 (August 15, 2004): 267–73. https://doi.org/10.1016/j.apsusc.2004.05.152.
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  - Brown, A. S., M. Losurdo, G. Bruno, T. Brown, and G. May. “Fundamental reactions controlling anion exchange during the synthesis of Sb/As mixed-anion heterojunctions.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 22, no. 4 (July 1, 2004): 2244–49. https://doi.org/10.1116/1.1775201.
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  - Seo, S. W., N. M. Jokerst, S. Y. Cho, A. S. Brown, S. Huang, J. J. Shin, and M. A. Brooke. “High-speed large-area inverted InGaAs thin-film metal-semiconductor-metal photodetectors.” Ieee Journal on Selected Topics in Quantum Electronics 10, no. 4 (July 1, 2004): 686–93. https://doi.org/10.1109/JSTQE.2004.831677.
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  - Losurdo, M., M. M. Giangregorio, P. Capezzuto, G. Bruno, G. Namkoong, W. A. Doolittle, and A. S. Brown. “Interplay between GaN polarity and surface reactivity towards atomic hydrogen.” Journal of Applied Physics 95, no. 12 (June 15, 2004): 8408–18. https://doi.org/10.1063/1.1745124.
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  - Losurdo, M., G. Bruno, A. Brown, and T. H. Kim. “Study of the temperature-dependent interaction of 4H-SiC and 6H-SiC surfaces with atomic hydrogen.” Applied Physics Letters 84, no. 20 (May 17, 2004): 4011–13. https://doi.org/10.1063/1.1748845.
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  - Losurdo, M., D. Giuva, M. M. Giangregorio, G. Bruno, and A. S. Brown. “Spectroscopic ellipsometry characterization of interface reactivity in GaAs-based superlattices.” Thin Solid Films 455–456 (May 1, 2004): 457–61. https://doi.org/10.1016/j.tsf.2003.11.286.
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  - Triplett, G. E., A. S. Brown, and G. S. May. “Charge modification in InAs/AlxGa1-xSb HEMT structures.” Journal of Crystal Growth 265, no. 1–2 (April 15, 2004): 47–52. https://doi.org/10.1016/j.jcrysgro.2004.01.036.
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  - Losurdo, M., D. Giuva, G. Bruno, S. Huang, T. H. Kim, and A. S. Brown. “The surface modification and reactivity of LiGaO2 substrates during GaN epitaxy.” Journal of Crystal Growth 264, no. 1–3 (March 15, 2004): 139–49. https://doi.org/10.1016/j.jcrysgro.2004.01.018.
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  - Huang, Zhaoran, Cheolung Cha, Shuodan Chen, Tomas Sarmiento, J. J. Shen, Nan M. Jokerst, Martin A. Brooke, Gary May, and April S. Brown. “InGaAs MSM Photodetectors Modeling Using DOE Analysis.” Proceedings of Spie the International Society for Optical Engineering 5178 (2004): 148–55. https://doi.org/10.1117/12.507337.
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  - Doolittle, W. A., G. Namkoong, A. G. Carver, and A. S. Brown. “Challenges and potential payoff for crystalline oxides in wide bandgap semiconductor technology.” Solid State Electronics 47, no. 12 (December 1, 2003): 2143–47. https://doi.org/10.1016/S0038-1101(03)00187-4.
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  - Kuech, T. F., N. Liu, T. H. Kim, C. Yi, and A. S. Brown. “Alternative substrates for InP and related materials.” Conference Proceedings International Conference on Indium Phosphide and Related Materials, July 25, 2003, 562.
  - Namkoong, G., W. A. Doolittle, A. S. Brown, M. Losurdo, M. M. Giangregorio, and G. Bruno. “The impact of substrate nitridation temperature and buffer design and synthesis on the polarity of GaN epitaxial films.” Journal of Crystal Growth 252, no. 1–3 (May 1, 2003): 159–66. https://doi.org/10.1016/S0022-0248(03)00953-9.
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  - Wang, Y. Q., Z. L. Wang, J. J. Shen, and A. Brown. “Effect of dissimilar anion annealing on structures of InAs/GaAs quantum dots.” Journal of Crystal Growth 252, no. 1–3 (May 1, 2003): 58–67. https://doi.org/10.1016/S0022-0248(02)02527-7.
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  - Jokerst, N. M., M. A. Brooke, S. Y. Cho, S. Wilkinson, M. Vrazel, S. Fike, J. Tabler, et al. “The heterogeneous integration of optical interconnections into integrated microsystems.” Ieee Journal on Selected Topics in Quantum Electronics 9, no. 2 (March 1, 2003): 350–60. https://doi.org/10.1109/JSTQE.2003.813307.
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  - Brown, A. S. “Superconducting circuit makers pin hopes on wireless filters.” Ieee Spectr. (Usa) 40, no. 4 (2003): 3pp.
  - Losurdo, M., D. Giuva, P. Capezzuto, G. Bruno, T. Brown, G. Triplett, G. May, and A. S. Brown. “A study of anion exchange reactions at GaAs surfaces for heterojunction interface control.” Materials Research Society Symposium Proceedings 799 (January 1, 2003): 97–102. https://doi.org/10.1557/proc-799-z2.5.
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  - Losurdo, M., M. M. Giangregorio, G. Bruno, A. S. Brown, W. A. Doolittle, G. Namkoong, A. J. Ptak, and T. H. Myers. “Surface potential measurements of doping and defects in p-GaN.” Materials Research Society Symposium Proceedings 798 (January 1, 2003): 805–10. https://doi.org/10.1557/proc-798-y5.18.
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  - Namkoong, G., W. A. Doolittle, A. S. Brown, M. Losurdo, M. M. Giangregorio, and G. Bruno. “Effect of buffer design on AlGaN/AlN/GaN heterostrucutres by MBE.” Materials Research Society Symposium Proceedings 798 (January 1, 2003): 359–64. https://doi.org/10.1557/proc-798-y10.62.
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  - Seo, S. W., J. J. Shen, N. M. Jokerst, and A. S. Brown. “Large area, high speed InGaAs thin film MSMs for heterogeneously integrated optoelectronics.” Osa Trends in Optics and Photonics Series 88 (January 1, 2003): 460–63.
  - Kim, T. H., C. Yi, A. S. Brown, P. Moran, and T. Kuech. “The Heterogeneous Integration of InAlAs/InGaAs Heterojunction Diodes on GaAs: Impact of Wafer Bonding on Structural and Electrical Characteristics.” Proceedings Ieee Lester Eastman Conference on High Performance Devices, December 1, 2002, 384–92.
  - Brown, T., A. Brown, and G. May. “Anion exchange at the interfaces of mixed anion III-V heterostructures grown by molecular beam epitaxy.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 20, no. 4 (July 1, 2002): 1771–76. https://doi.org/10.1116/1.1491988.
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  - Wang, Y. Q., Z. L. Wang, T. Brown, A. Brown, and G. May. “Thermodynamic analysis of anion exchange during heteroepitaxy.” Journal of Crystal Growth 242, no. 1–2 (July 1, 2002): 5–14. https://doi.org/10.1016/S0022-0248(02)01288-5.
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  - Wang, Y. Q., Z. L. Wang, J. J. Shen, and A. S. Brown. “Engineering vertically aligned InAs/GaAs quantum dot structures via anion exchange.” Solid State Communications 122, no. 10 (June 1, 2002): 553–56. https://doi.org/10.1016/S0038-1098(02)00212-0.
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  - Namkoong, G., W. A. Doolittle, A. S. Brown, M. Losurdo, P. Capezzuto, and G. Bruno. “Role of low-temperature (200 °C) nitridation in the growth of GaN by plasma-assisted molecular-beam epitaxy.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 20, no. 3 (May 1, 2002): 1221–28. https://doi.org/10.1116/1.1470514.
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  - Losurdo, M., P. Capezzuto, G. Bruno, G. Namkoong, W. A. Doolittle, and A. S. Brown. “Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part II. Interplay between chemistry and structure of layers.” Journal of Applied Physics 91, no. 4 (February 15, 2002): 2508–18. https://doi.org/10.1063/1.1435835.
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  - Namkoong, G., W. A. Doolittle, A. S. Brown, M. Losurdo, P. Capezzuto, and G. Bruno. “Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part I. Impact of the nitridation chemistry on material characteristics.” Journal of Applied Physics 91, no. 3 (February 1, 2002): 2499–2507. https://doi.org/10.1063/1.1435834.
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  - Seo, S., K. K. Lee, S. Kang, S. Huang, W. A. Doolittle, N. M. Jokerst, A. S. Brown, and M. A. Brooke. “The heterogeneous integration of GaN thin-film metal-semiconductor-metal photodetectors onto silicon.” Ieee Photonics Technology Letters 14, no. 2 (February 1, 2002): 185–87. https://doi.org/10.1109/68.980507.
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  - Cheung, M., G. Namkoong, M. Furis, F. Chen, A. N. Cartwright, W. A. Doolittle, and A. Brown. “Time resolved optical studies of InGaN layers grown on LGO.” Materials Research Society Symposium Proceedings 743 (January 1, 2002): 659–64. https://doi.org/10.1557/proc-743-l11.6.
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  - Doolittle, W. A., G. Namkoong, A. Carver, W. Henderson, D. Jundt, and A. S. Brown. “III-nitride growth on lithium niobate: A new substrate material for polarity engineering in III-nitride heteroepitaxy.” Materials Research Society Symposium Proceedings 743 (January 1, 2002): 9–14. https://doi.org/10.1557/proc-743-l1.4.
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  - Losurdo, M., M. M. Giangregorio, P. Capezzuto, G. Bruno, G. Namkoong, W. Alan Doolittle, and A. S. Brown. “A chemical perspective of GaN polarity: The use of hydrogen plasma dry etching versus NaOH wet etching to determine polarity.” Materials Research Society Symposium Proceedings 722 (January 1, 2002): 103–8. https://doi.org/10.1557/proc-722-k3.4.
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  - Losurdo, M., P. Capezzuto, G. Bruno, G. Namkoong, W. A. Doolittle, and A. S. Brown. “Plasmas for the low-temperature growth of high-quality GaN films by molecular beam epitaxy and remote plasma MOCVD.” Physica Status Solidi (A) Applied Research 190, no. 1 (2002): 43–51. https://doi.org/10.1002/1521-396X(200203)190:13.0.CO;2-G.
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  - Losurdo, M., P. Capezzuto, G. Bruno, G. Namkoong, W. A. Doolittle, and A. S. Brown. “Thickness influence on optical and morphological properties of HVPE GaN layers grown on MOCVD GaN layers.” Physica Status Solidi (A) Applied Research 190, no. 1 (2002): 53–58. https://doi.org/10.1002/1521-396X(200203)190:1<53::AID-PSSA53>3.0.CO;2-E.
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  - Seo, S., S. Kang, S. Huang, K. Lee, W. Doolittle, N. Jokerst, A. Brown, and M. Brooke. “Thin film GaN metal-semiconductor-metal photodetectors integrated onto silicon.” Pacific Rim Conference on Lasers and Electro Optics, Cleo Technical Digest, January 1, 2002, 630–31.
  - Triplett, G., G. May, and A. Brown. “Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks.” Solid State Electronics 46, no. 10 (January 1, 2002): 1519–24. https://doi.org/10.1016/S0038-1101(02)00098-9.
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  - Yi, C., R. A. Metzger, and A. S. Brown. “The effect of strained Al0.7In0.3As emitter layers on abrupt N-p⁺ AlInAs-GaInAs heterojunction diodes and heterojunction bipolar transistors.” Journal of Electronic Materials 31, no. 8 (January 1, 2002): 841–47. https://doi.org/10.1007/s11664-002-0193-5.
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  - Yi, C., T. H. Kim, and A. S. Brown. “InP-based AlInAs/GaAs0.51Sb0.49/GaInAs single heterojunction bipolar transistor for high-speed and RF wireless applications.” Journal of Electronic Materials 31, no. 2 (January 1, 2002): 95–98. https://doi.org/10.1007/s11664-002-0153-0.
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  - Brown, A. S., W. A. Doolittle, N. M. Jokerst, S. Kang, S. Huang, and S. W. Seo. “Heterogeneous materials integration: Compliant substrates to active device and materials packaging.” Materials Science and Engineering B: Solid State Materials for Advanced Technology 87, no. 3 (December 19, 2001): 317–22. https://doi.org/10.1016/S0921-5107(01)00730-9.
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  - Brown, A., D. Llewellyn, and M. Usselman. “Institutional self-assessments as change agents: Georgia tech's two year experience.” Asee Annual Conference Proceedings, December 1, 2001, 5947–58.
  - Doolittle, W. A., A. S. Brown, S. Kang, S. W. Seo, S. Huang, and N. M. Jokerst. “Recent Advances in III-Nitride Devices Grown on Lithium Gallate.” Physica Status Solidi (A) Applied Research 188, no. 2 (November 1, 2001): 491–95. https://doi.org/10.1002/1521-396X(200112)188:2<491::AID-PSSA491>3.0.CO;2-B.
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  - Wang, Y. Q., Z. L. Wang, T. Brown, A. Brown, and G. May. “Interfacial roughening in lattice-matched GaInP/GaAs heterostructures.” Thin Solid Films 397, no. 1–2 (November 1, 2001): 162–69. https://doi.org/10.1016/S0040-6090(01)01420-1.
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  - Lee, K. K., W. A. Doolittle, T. H. Kim, A. S. Brown, G. S. May, S. R. Stock, Z. R. Dai, and Z. L. Wang. “A comparative study of surface reconstruction of wurtzite GaN on (0 0 0 1) sapphire by RF plasma-assisted molecular beam epitaxy.” Journal of Crystal Growth 231, no. 1–2 (September 1, 2001): 8–16. https://doi.org/10.1016/S0022-0248(01)01307-0.
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  - Seo, S. W., K. K. Lee, S. Kang, S. Huang, W. A. Doolittle, N. M. Jokerst, and A. S. Brown. “GaN metal-semiconductor-metal photodetectors grown on lithium gallate substrates by molecular-beam epitaxy.” Applied Physics Letters 79, no. 9 (August 27, 2001): 1372–74. https://doi.org/10.1063/1.1398320.
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  - Shen, J. J., A. S. Brown, Y. Wang, and Z. L. Wang. “Self-assembled quantum dot transformations via anion exchange.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 19, no. 4 (July 1, 2001): 1463–66. https://doi.org/10.1116/1.1385916.
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  - Brown, A. S., N. M. Jokerst, A. Doolittle, M. Brooke, T. F. Kuech, S. W. Seo, S. Kang, S. Huang, and J. J. Shen. “Heterogeneous integration: From substrate technology to active packaging.” Technical Digest International Electron Devices Meeting, January 1, 2001, 197–200. https://doi.org/10.1109/IEDM.2001.979465.
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  - Kang, S., W. A. Doolittle, K. K. Lee, Z. R. Dai, Z. L. Wang, S. R. Stock, and A. S. Brown. “Characterization of algan/gan structures on various substrates grown by radio frequency-plasma assisted molecular beam epitaxy.” Journal of Electronic Materials 30, no. 3 (January 1, 2001): 156–61. https://doi.org/10.1007/s11664-001-0009-z.
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  - Losurdo, M., P. Capezzuto, G. Bruno, G. Namkoong, W. A. Doolittle, and A. S. Brown. “The chemistry of sapphire nitridation in relation to the GaN structural quality: Why low temperature 200°C nitridation?” Phys. Status Solidi a (Germany) 188, no. 2 (2001): 561–65. https://doi.org/10.1002/1521-396X(200112)188:23.0.CO;2-J.
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  - Losurdo, M., P. Capezzuto, G. Bruno, G. Namkoong, W. A. Doouttle, and A. S. Brown. “The Chemistry of Sapphire Nitridation in Relation to the GaN Structural Quality: Why Low Temperature 200°C Nitridation?” Physica Status Solidi (A) Applied Research 188, no. 2 (2001): 561–65. https://doi.org/10.1002/1521-396X(200112)188:2<561::AID-PSSA561>3.0.CO;2-J.
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  - Vrazel, M., J. J. Chang, I. D. Song, K. S. Chung, M. Brooke, N. M. Jokerst, A. Brown, and D. S. Wills. “Highly alignment tolerant InGaAs inverted MSM photodetector heterogeneously integrated on a differential Si CMOS receiver operating at 1 Gbps.” Proceedings Electronic Components and Technology Conference, January 1, 2001, 8–13. https://doi.org/10.1109/ECTC.2001.927665.
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  - Namkoong, G., W. A. Doolittle, and A. S. Brown. “Incorporation of Mg in GaN grown by plasma-assisted molecular beam epitaxy.” Applied Physics Letters 77, no. 26 (December 25, 2000): 4386–88. https://doi.org/10.1063/1.1334942.
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  - Jokerst, N. M., M. A. Brooke, J. Laskar, D. S. Wills, A. S. Brown, O. Vendier, S. W. Bond, et al. “Smart photonics: Optoelectronics integrated with Si CMOS VLSI circuits.” Proceedings of Spie the International Society for Optical Engineering 4109 (December 1, 2000): 241–51.
  - Lee, K. K., T. Brown, G. Dagnall, R. Bicknell-Tassius, A. Brown, and G. May. “Neural Network Modeling of Molecular Beam Epitaxy.” American Society of Mechanical Engineers, Heat Transfer Division, (Publication) Htd 366 (December 1, 2000): 119–27.
  - Lee, K., S. Seo, M. Vrazel, S. Huang, W. Doolittle, N. Jokerst, and A. Brown. “GaN thin film material bonded to host substrates using selective chemical etching.” Conference Proceedings Lasers and Electro Optics Society Annual Meeting Leos 2 (December 1, 2000): 559–60.
  - Shen, J. J., T. H. Kim, and A. S. Brown. “Growth and characterization of InGaAs/AlInAs HEMT structures on oxide-bonded InGaAs substrates.” Ieee International Symposium on Compound Semiconductors, Proceedings, December 1, 2000, 131–35.
  - Vrazel, M., J. J. Chang, M. Brooke, N. M. Jokerst, G. Dagnall, and A. Brown. “Alignment tolerant InP/Si CMOS hybrid integrated photoreceivers operating at 0.9 Gbps.” Conference Proceedings Lasers and Electro Optics Society Annual Meeting Leos 2 (December 1, 2000): 884–85.
  - Vrazel, M., J. J. Chang, M. Brooke, N. M. Jokerst, Y. Joo, L. Carastro, G. Dagnall, and A. Brown. “Analysis of alignment tolerant hybrid optoelectronic receivers for high density interconnection substrates.” Proceedings Electronic Components and Technology Conference, December 1, 2000, 223–30.
  - Brown, A. S., and W. A. Doolittle. “Status and promise of compliant substrate technology.” Applied Surface Science 166, no. 1 (October 9, 2000): 392–98. https://doi.org/10.1016/S0169-4332(00)00455-4.
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  - Wang, Y. Q., Z. L. Wang, T. Brown, A. Brown, and G. May. “Configurations of misfit dislocations at interfaces of lattice-matched Ga0.5In0.5P/GaAs heterostructures.” Applied Physics Letters 77, no. 2 (July 10, 2000): 223–25. https://doi.org/10.1063/1.126931.
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  - Lee, K. K., W. A. Doolittle, A. S. Brown, G. S. May, and S. R. Stock. “Using statistical experimental design to investigate the role of the initial growth conditions on GaN epitaxial films grown by molecular beam epitaxy.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 18, no. 3 (May 1, 2000): 1448–52. https://doi.org/10.1116/1.591401.
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  - Doolittle, W. A., S. Kang, and A. Brown. “MBE growth of high quality GaN on LiGaO2 for high frequency, high power electronic applications.” Solid State Electronics 44, no. 2 (February 1, 2000): 229–38. https://doi.org/10.1016/S0038-1101(99)00228-2.
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  - Brown, A. S., W. A. Doolittle, S. Kang, J. J. Shen, Z. L. Wang, and Z. Dai. “Growth of GaN on lithium gallate (LiGaO2) substrates for material integration.” Journal of Electronic Materials 29, no. 7 (January 1, 2000): 894–96. https://doi.org/10.1007/s11664-000-0176-3.
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  - Jokerst, N. M., M. A. Brooke, J. Laskar, D. S. Wills, A. S. Brown, M. Vrazel, S. Jung, Y. Joo, and J. J. Chang. “Microsystem Optoelectronic Integration for Mixed Multisignal Systems.” Ieee Journal on Selected Topics in Quantum Electronics 6, no. 6 (January 1, 2000): 1231–37. https://doi.org/10.1109/2944.902172.
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  - Jokerst, N. M., M. A. Brooke, J. Laskar, D. S. Wills, A. S. Brown, and M. A. Ingram. “Building collaborative teams for multi-disciplinary educational projects in optoelectronics.” Proceedings of Spie the International Society for Optical Engineering 3831 (January 1, 2000): 25–35. https://doi.org/10.1117/12.388713.
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  - Kang, S., W. A. Doolittle, S. R. Stock, and A. S. Brown. “Comparison of AlGaN and GaN grown on various substrates: Step flow growth on LiGaO2 at low growth temperature.” Materials Science Forum 338 (January 1, 2000).
  - Kang, S., W. A. Doolittle, S. R. Stock, and A. S. Brown. “Comparison of AlGaN and GaN grown on various substrates: Step flow growth on LiGaO₂ at low growth temperature.” Materials Science Forum 338 (2000): II/-.
  - Kim, T. H., A. S. Brown, and R. A. Metzger. “Electrical properties of InAlAs/InAsxP1-x/InP composite-channel modulation-doped structures grown by solid source molecular beam epitaxy.” Journal of Electronic Materials 29, no. 2 (January 1, 2000): 215–21. https://doi.org/10.1007/s11664-000-0145-x.
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  - Lee, K. K., T. Brown, G. Dagnall, R. Bicknell-Tassius, A. Brown, and G. S. May. “Using neural networks to construct models of the molecular beam epitaxy process.” Ieee Transactions on Semiconductor Manufacturing 13, no. 1 (January 1, 2000): 34–45. https://doi.org/10.1109/66.827338.
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  - Lee, K., S. Seo, S. Huang, Y. Joo, W. A. Doolittle, S. Fike, N. Jokerst, et al. “Design of a smart pixel multispectral imaging array using 3D stacked thin film detectors on Si CMOS circuits.” Leos Summer Topical Meeting, January 1, 2000, 57–58. https://doi.org/10.1109/LEOSST.2000.869697.
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  - Namkoong, G., W. A. Doolittle, S. Kang, H. Sa, A. S. Brown, and S. R. Stock. “Low temperature nitridation combined with high temperature buffer annealing for high quality GaN grown by plasma-assisted MBE.” Mrs Internet Journal of Nitride Semiconductor Research 5 (January 1, 2000). https://doi.org/10.1557/s1092578300000107.
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  - Vrazel, M., J. J. Chang, M. Brooke, N. M. Jokerst, G. Dagnall, and A. Brown. “Alignment tolerant hybrid photoreceivers using inverted MSMs.” Leos Summer Topical Meeting, January 1, 2000, 23–24.
  - Wang, Y. Q., Z. L. Wang, T. Brown, A. Brown, and G. May. “Lateral compositional modulation in lattice-matched GaInP/GaAs heterostructures.” Journal of Electronic Materials 29, no. 12 (January 1, 2000): 1372–79. https://doi.org/10.1007/s11664-000-0121-5.
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  - Jokerst, N. M., M. A. Brooke, J. Laskar, D. S. Wills, A. S. Brown, O. Vendier, S. Bond, et al. “Smart photonics: Optoelectronics integrated onto Si CMOS circuits.” Conference Proceedings Lasers and Electro Optics Society Annual Meeting Leos 2 (December 1, 1999): 423–24.
  - Kang, S., W. A. Doolittle, A. S. Brown, and S. R. Stock. “Electrical and structural characterization of AlxGa1-xN/GaN heterostructures grown on LiGaO2 substrates.” Applied Physics Letters 74, no. 22 (May 31, 1999): 3380–82. https://doi.org/10.1063/1.123351.
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  - Matyi, R. J., W. A. Doolittle, and A. S. Brown. “High resolution X-ray diffraction analyses of GaN/LiGaO2.” Journal of Physics D: Applied Physics 32, no. 10 A (May 21, 1999). https://doi.org/10.1088/0022-3727/32/10A/313.
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  - Bond, S. W., O. Vendier, M. Lee, S. Jung, M. Vrazel, A. Lopez-Lagunas, S. Chai, et al. “Three-layer 3-D silicon system using through-Si vertical optical interconnections and Si CMOS hybrid building blocks.” Ieee Journal on Selected Topics in Quantum Electronics 5, no. 2 (March 1, 1999): 276–86. https://doi.org/10.1109/2944.778306.
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  - Chen, Y. C., P. Chin, D. Ingram, R. Lai, R. Grundbacher, M. Barsky, T. Block, et al. “Composite-channel InP HEMT for W-band power amplifiers.” Conference Proceedings International Conference on Indium Phosphide and Related Materials, January 1, 1999, 305–6.
  - Dagnall, G., A. S. Brown, and S. R. Stock. “Arsenic incorporation in InAsP/InP quantum wells.” Journal of Electronic Materials 28, no. 10 (January 1, 1999): 1108–10. https://doi.org/10.1007/s11664-999-0246-0.
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  - Dagnall, G., J. J. Shen, T. H. Kim, R. A. Metzger, A. S. Brown, and S. R. Stock. “Solid source MBE growth of InAsP/InP quantum wells.” Journal of Electronic Materials 28, no. 8 (January 1, 1999): 933–38. https://doi.org/10.1007/s11664-999-0199-3.
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  - Dagnall, G., S. R. Stock, and A. S. Brown. “Growth of InAsP/InP quantum wells by solid source MBE on misoriented and exact InP (1 1 1)B: Substrate temperature and arsenic species effects.” Journal of Crystal Growth 201 (January 1, 1999): 242–47. https://doi.org/10.1016/S0022-0248(98)01330-X.
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  - Doolittle, W. A., and A. S. Brown. “Compliant substrate processes.” Materials Research Society Symposium Proceedings 570 (January 1, 1999): 225–34. https://doi.org/10.1557/proc-570-225.
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  - Kim, T. H., A. S. Brown, and R. A. Metzger. “Optical and structural properties of strained InAlAs/InAsxP1-x multi-quantum wells grown by solid source molecular beam epitaxy.” Journal of Applied Physics 86, no. 5 (January 1, 1999): 2622–27. https://doi.org/10.1063/1.371101.
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  - Shen, J. J., N. M. Jokerst, and A. S. Brown. “Compliant substrate strain modulated epitaxy for WDM laser arrays.” Conference Proceedings Lasers and Electro Optics Society Annual Meeting Leos 1 (December 1, 1998): 95–96.
  - Brown, A. S. “Compliant substrate technology: Status and prospects.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 16, no. 4 (January 1, 1998): 2308–12. https://doi.org/10.1116/1.590166.
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  - Doolittle, W. A., S. Kang, T. J. Kropewnicki, S. Stock, P. A. Kohl, and A. S. Brown. “MBE growth of high quality GaN on LiGaO2.” J. Electron. Mater. (Usa) 27, no. 8 (1998): 58–60.
  - Doolittle, W. A., T. Kropewnicki, C. Carter-Coman, S. Stock, P. Kohl, N. M. Jokerst, R. A. Metzger, et al. “Growth of GaN on lithium gallate substrates for development of a GaN thin compliant substrate.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 16, no. 3 (January 1, 1998): 1300–1304. https://doi.org/10.1116/1.590005.
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  - Kropewnicki, T. J., W. A. Doolittle, C. Carter-Coman, S. Kang, P. A. Kohl, N. M. Jokerst, and A. S. Brown. “Selective wet etchinq of lithium gallate.” Journal of the Electrochemical Society 145, no. 5 (January 1, 1998). https://doi.org/10.1149/1.1838496.
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  - Shen, J. J., A. S. Brown, R. A. Metzger, B. Sievers, L. Bottomley, P. Eckert, and W. B. Carter. “Modification of quantum dot properties via surface exchange and annealing: Substrate temperature effects.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 16, no. 3 (January 1, 1998): 1326–29. https://doi.org/10.1116/1.590068.
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  - Carter-Coman, C., A. S. Brown, R. A. Metzger, N. M. Jokerst, J. Pickering, and L. A. Bottomley. “A new mechanism for spontaneous nanostructure formation on bottom-patterned compliant substrates.” Applied Physics Letters 71, no. 19 (November 10, 1997): 2773–75. https://doi.org/10.1063/1.120129.
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  - Carter-Coman, C., R. Bicknell-Tassius, A. S. Brown, and N. M. Jokerst. “Metastability modeling of compliant substrate critical thickness using experimental strain relief data.” Applied Physics Letters 71, no. 10 (September 8, 1997): 1344–46. https://doi.org/10.1063/1.119889.
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  - Carter-Coman, C., R. Bicknell-Tassius, A. S. Brown, and N. M. Jokerst. “Analysis of In0.07Ga0.93As layers on GaAs compliant substrates by double crystal x-ray diffraction.” Applied Physics Letters 70, no. 13 (March 31, 1997): 1754–56. https://doi.org/10.1063/1.118647.
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  - May, P., M. Lee, S. T. Wilkinson, O. Vendier, Z. Ho, S. W. Bond, D. S. Wills, M. Brooke, N. M. Jokerst, and A. Brown. “A 100 Mbps, LED through-wafer optoelectronic link for multicomputer interconnection networks.” Journal of Parallel and Distributed Computing 41, no. 1 (February 25, 1997): 3–19. https://doi.org/10.1006/jpdc.1996.1281.
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  - Bicknell-Tassius, R. N., K. Lee, A. S. Brown, G. Dagnall, and G. May. “The growth of AlGaAs-InGaAs quantum-well structures by molecular beam epitaxy: Observation of critical interdependent effects.” Applied Physics Letters 70, no. 1 (January 6, 1997): 52–54. https://doi.org/10.1063/1.119303.
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  - Bicknell-Tassius, R. N., K. Lee, A. S. Brown, G. Dagnall, and G. May. “The growth of AlGaAs-InGaAs quantum-well structures by molecular beam epitaxy: Observation of critical interdependent effects utilizing the design of experiments approach.” Journal of Crystal Growth 175–176, no. PART 2 (January 1, 1997): 1131–37. https://doi.org/10.1016/S0022-0248(96)01210-9.
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  - Carter-Coman, C., R. Bicknell-Tassius, A. S. Brown, and N. M. Jokerst. “Compliant substrates for reduction of strain relief in mismatched overlayers.” Materials Research Society Symposium Proceedings 441 (January 1, 1997): 361–66.
  - Carter-Coman, C., R. Bicknell-Tassius, R. G. Benz, A. S. Brown, and N. M. Jokerst. “Analysis of GaAs substrate removal etching with citric acid:H2O2 and NH4OH:H2O2 for application to compliant substrates.” Journal of the Electrochemical Society 144, no. 2 (January 1, 1997). https://doi.org/10.1149/1.1837422.
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  - Carter-Coman, C., R. Bicknell-Tassius, R. G. Benz, A. S. Brown, and N. M. Jokerst. “Analysis of GaAs substrate removal etching with citric acid:H ₂O ₂ and NH ₄OH:H ₂O ₂ for application to compliant substrates.” Journal of the Electrochemical Society 144, no. 2 (1997): L29–31.
  - Cowles, J., R. A. Metzger, A. Gutierrez-Aitken, A. S. Brown, D. Streit, A. Oki, T. Kim, and A. Doolittle. “Double heterojunction bipolar transistors with InP epitaxial layers grown by solid-source MBE.” Conference Proceedings International Conference on Indium Phosphide and Related Materials, January 1, 1997, 548–50.
  - Doolittle, W. A., T. Kropewnicki, C. Carter-Coman, S. Stock, P. Kohl, N. M. Jokerst, R. A. Metzger, et al. “Growth of GaN on lithium gallate substrates for development of a GaN thin compliant substrate.” Materials Research Society Symposium Proceedings 482 (January 1, 1997): 283–88. https://doi.org/10.1557/proc-482-283.
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  - Fournier, F., R. A. Metzger, A. Doolittle, A. S. Brown, C. Carter-Coman, N. M. Jokerst, and R. Bicknell-Tassius. “Growth dynamics of InGaAs/GaAs by MBE.” Journal of Crystal Growth 175–176, no. PART 1 (January 1, 1997): 203–10. https://doi.org/10.1016/S0022-0248(96)00888-3.
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  - Fournier, F., R. A. Metzger, A. Doolittle, A. S. Brown, C. Carter-Coman, N. M. Jokerst, and R. Bicknell-Tassius. “Growth dynamics of InGaAs/GaAs by MBE.” Journal of Crystal Growth 175–176, no. PART 1 (1997): 203–10.
  - Kromann, R. F., R. N. Bicknell-Tassius, A. S. Brown, J. F. Dorsey, K. Lee, and G. May. “Real-time monitoring of RHEED using machine vision techniques.” Journal of Crystal Growth 175–176, no. PART 1 (January 1, 1997): 334–39. https://doi.org/10.1016/S0022-0248(96)01184-0.
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  - Wang, S. C., J. Cross, S. M. Chai, A. Lopez, J. Park, M. A. Ingram, N. M. Jokerst, D. S. Wills, M. Brooke, and A. Brown. “Coupling efficiency of an alignment-tolerant, single fiber, bi-directional link.” Proceedings Electronic Components and Technology Conference, January 1, 1997, 30–36.
  - Brown, A. S., P. Bhattacharya, J. Singh, P. Zaman, S. Sen, and F. Turco. “Dependence of Al0.48In0.52As Schottky diode properties on molecular beam epitaxial growth temperature.” Applied Physics Letters 68, no. 2 (December 1, 1996): 220–22. https://doi.org/10.1063/1.116466.
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  - Cat, H. H., A. Gentile, J. C. Eble, M. Lee, O. Vendier, Y. J. Joo, D. S. Wills, M. Brooke, N. M. Jokerst, and A. S. Brown. “SIMPil: An OE integrated SIMD architecture for focal plane processing applications.” International Conference on Massively Parallel Processing Using Optical Interconnections (Mppoi), Proceedings, December 1, 1996, 44–52.
  - Lee, K. K., R. Bicknell-Tassius, G. Dagnall, A. Brown, and G. May. “Statistical experimental design for MBE process characterization.” Proceedings of the Ieee/Cpmt International Electronic Manufacturing Technology (Iemt) Symposium, December 1, 1996, 378–85.
  - Carter-Coman, C., A. S. Brown, R. Bicknell-Tassius, N. M. Jokerst, and M. Allen. “Strain-modulated epitaxy: A flexible approach to 3-D band structure engineering without surface patterning.” Applied Physics Letters 69, no. 2 (July 8, 1996): 257–59. https://doi.org/10.1063/1.117942.
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  - Gilbert, E. P., P. A. Reynolds, A. S. Brown, and J. W. White. “n-Paraffin solid solutions: modification of phase separation with carbon number.” Chemical Physics Letters 255, no. 4–6 (June 1996): 373–77. https://doi.org/10.1016/0009-2614(96)00371-5.
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  - Carter-Coman, C., A. S. Brown, N. M. Jokerst, D. E. Dawson, R. Bicknell-Tassius, Z. C. Feng, K. C. Rajkumar, and G. Dagnall. “Strain accommodation in mismatched layers by molecular beam epitaxy: Introduction of a new compliant substrate technology.” Journal of Electronic Materials 25, no. 7 (January 1, 1996): 1044–48. https://doi.org/10.1007/BF02659900.
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  - Carter-Coman, C., A. S. Brown, R. Bicknell-Tassius, N. M. Jokerst, F. Fournier, and D. E. Dawson. “Strain-modulated epitaxy: Modification of growth kinetics via patterned, compliant substrates.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 14, no. 3 (January 1, 1996): 2170–74. https://doi.org/10.1116/1.588892.
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  - Brown, A. S., P. Bhattacharya, J. Singh, P. Zaman, S. Sen, and F. Turco. “Dependence of Al0.48In0.52As Schottky diode properties on molecular beam epitaxial growth temperature.” Applied Physics Letters, December 1, 1995, 220.
  - Carter-Coman, C., A. S. Brown, R. Bicknell-Tassius, N. M. Jokerst, and M. Allen. “Strain-modulated epitaxy: A flexible approach to 3-D band structure engineering without surface patterning.” Applied Physics Letters, December 1, 1995, 257.
  - May, P., S. T. Wilkinson, N. M. Jokerst, D. S. Wills, M. Lee, O. Vendier, S. W. Bond, et al. “Design issues for through-wafer optoelectronic multicomputer interconnects.” International Conference on Massively Parallel Processing Using Optical Interconnections (Mppoi), Proceedings, December 1, 1995, 8–15.
  - Cat, H. H., D. S. Wills, N. M. Jokerst, M. A. Brooke, and A. S. Brown. “Three-dimensional, massively parallel, optically interconnected silicon computational hardware and architectures for high-speed IR scene generation.” Proceedings of Spie the International Society for Optical Engineering 2469 (January 1, 1995): 141–45.
  - Rosenbaum, S. E., L. M. Jelloian, M. Matloubian, L. E. Larson, L. Nguyen, M. A. Thompson, B. K. Kormanyos, A. S. Brown, L. P. B. Katehi, and G. M. Rebeiz. “155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC Oscillators.” Ieee Transactions on Microwave Theory and Techniques 43, no. 4 (January 1, 1995): 927–32. https://doi.org/10.1109/22.375256.
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  - Case, M., S. Rosenbaum, C. Ngo, M. Matloubian, A. Brown, J. Henige, M. Thompson, and L. Larson. “High efficiency, high gain K- and Ku-band InP-based HEMT MMIC amplifiers for array applications,” December 1, 1994, 49–54.
  - Brown, A. S., A. E. Schmitz, L. D. Nguyen, J. A. Henige, and L. E. Larson. “Growth of high performance InxGa1-xAs (.52 < x <.9) - (Al.48In.52As) high electron mobility transistors by MBE.” Ieee International Conferece on Indium Phosphide and Related Materials, 1994, 263–66. https://doi.org/10.1109/ICIPRM.1994.328217.
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  - Brown, A. S., A. E. Schmitz, L. D. Nguyen, J. A. Henige, and L. E. Larson. “Growth of high performance In_xGa_1-xAs (.52 < x <.9) - (Al.₄₈In.₅₂As) high electron mobility transistors by MBE.” Conference Proceedings International Conference on Indium Phosphide and Related Materials, 1994, 263–66.
  - Lam, W., A. Igawa, A. Kurdoghlian, L. Jelloian, A. Brown, M. Thompson, and L. Larson. “44-GHz High-Efficiency InP-HEMT MMIC Power Amplifier.” Ieee Microwave and Guided Wave Letters 4, no. 8 (January 1, 1994): 277–78. https://doi.org/10.1109/75.311497.
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  - Brown, A. S., J. A. Henige, A. E. Schmitz, and L. E. Larson. “Effect of growth conditions on the electrical and optical properties of AlxIn1-xAs (0.48<x<0.7)-Ga0.47In 0.53As heterostructures.” Applied Physics Letters 62, no. 1 (December 1, 1993): 66–68. https://doi.org/10.1063/1.108821.
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  - Kurdoghlian, A., W. Lam, C. Chou, L. Jellian, A. Igawa, M. Matloubian, L. Larson, A. Brown, M. Thompson, and C. Ngo. “High-efficiency InP-based HEMT MMIC power amplifier.” Technical Digest Gaas Ic Symposium (Gallium Arsenide Integrated Circuit), December 1, 1993, 375–77.
  - Matloubian, M., L. Larson, A. Brown, L. Jelloian, L. Nguyen, M. Lui, T. Liu, et al. “InP-based HEMTs for the realization of ultra-high efficiency millimeterwave power amplifiers.” Proceedings of the Ieee Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, December 1, 1993, 520–27.
  - Rosenbaum, S. E., L. M. Jelloian, A. S. Brown, M. A. Thompson, M. Matloubian, L. E. Larson, R. Lohr, B. K. Kormanyos, G. M. Rebeiz, and L. P. B. Katehi. “213 GHz AlInAs/GaInAs/InP HEMT MMIC oscillator.” Technical Digest International Electron Devices Meeting, December 1, 1993, 924–26.
  - Zakharov, N. D., Z. Liliental-Weber, W. Swider, A. S. Brown, and R. Metzger. “Structure of Ga0.47In0.53As epitaxial layers grown on InP substrates at different temperatures.” Applied Physics Letters 63, no. 20 (December 1, 1993): 2809–11. https://doi.org/10.1063/1.110294.
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  - Zakharov, N. D., Z. Liliental-Weber, W. Swider, J. Washburn, A. S. Brown, and R. Metzger. “Ordering in InGaAs/InAlAs layers.” Journal of Electronic Materials 22, no. 12 (December 1, 1993): 1495–98. https://doi.org/10.1007/BF02650006.
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  - Schramm, Jeff E. “Highly selective reactive ion etch process for InP-based device fabrication using methane/hydrogen/argon.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 11, no. 6 (November 1993): 2280–2280. https://doi.org/10.1116/1.586890.
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  - Brown, A. S. “Growth and properties of AlInAs–GaInAs alloys and quantum wells on (110) InP.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 11, no. 3 (May 1993): 817–817. https://doi.org/10.1116/1.586753.
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  - Metzger, R. A. “Structural and electrical properties of low temperature GaInAs.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 11, no. 3 (May 1993): 798–798. https://doi.org/10.1116/1.586792.
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  - Brown, J. J., A. S. Brown, S. E. Rosenbaum, A. S. Schmitz, M. Matloubian, L. E. Larson, M. A. Melendes, and M. A. Thompson. “Study of the dependence of Ga/sub 0.47/In/sub 0.53/As/Al/sub x/ In/sub 1-x/As power HEMT breakdown voltage on Schottky layer design and device layout.” Ieee Transactions on Electron Devices 40, no. 11 (1993): 2111–12. https://doi.org/10.1109/16.239781.
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  - Lam, W., A. Kurdoghlian, A. Igawa, M. Matloubian, L. Larson, C. Chou, L. Jelloian, A. Brown, M. Thompson, and C. Ngo. “High-Efficiency InP-Based HEMT MMIC Power Amplifier for Q-Band Applications.” Ieee Microwave and Guided Wave Letters 3, no. 11 (January 1, 1993): 420–22. https://doi.org/10.1109/75.248519.
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  - Larson, L. E., M. M. Matloubian, J. J. Brown, A. S. Brown, R. Rhodes, D. Crampton, and M. Thompson. “AlInAs/GaInAs on InP HEMTs for low power supply voltage operation of high power-added efficiency microwave amplifiers.” Electronics Letters 29, no. 15 (January 1, 1993): 1324–26. https://doi.org/10.1049/el:19930888.
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  - Matloubian, M., A. S. Brown, L. D. Nguyen, M. A. Melendes, L. E. Larson, M. J. Delaney, J. E. Pence, R. A. Rhodes, M. A. Thompson, and J. A. Henige. “High-Power V-Band AlInAs/GaInAs on InP HEMT's.” Ieee Electron Device Letters 14, no. 4 (January 1, 1993): 188–89. https://doi.org/10.1109/55.215155.
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  - Matloubian, M., A. S. Brown, L. D. Nguyen, M. A. Melendes, L. E. Larson, M. J. Delaney, M. A. Thompson, R. A. Rhodes, and J. E. Pence. “20-GHz High-Efficiency AlInAs-GalnAs on InP Power HEMT.” Ieee Microwave and Guided Wave Letters 3, no. 5 (January 1, 1993): 142–44. https://doi.org/10.1109/75.217211.
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  - Matloubian, M., L. M. Jelloian, A. S. Brown, L. D. Nguyen, L. E. Larson, M. J. Delaney, M. A. Thompson, R. A. Rhodes, and J. E. Pence. “V-band high-efficiency high-power AlInAs/GaInAs/InP HEMTs.” Ieee Mtt S International Microwave Symposium Digest 2 (January 1, 1993): 535–37.
  - Matloubian, M., L. M. Jelloian, A. S. Brown, L. D. Nguyen, L. E. Larson, M. J. Delaney, and M. A. Thompson. “V-Band High-Efficiency High-Power AlInAs/GaInAs/InP HEMT’s.” Ieee Transactions on Microwave Theory and Techniques 41, no. 12 (January 1, 1993): 2206–10. https://doi.org/10.1109/22.260707.
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  - Nguyen, L. D., A. S. Brown, M. A. Thompson, and L. M. Jelloian. “50 nm InP high electron mobility transistors.” Microw. J. (Usa) 36, no. 6 (1993): 96,98,101.
  - Rosenbaum, S. E., L. M. Jelloian, L. E. Larson, U. K. Mishra, D. A. Pierson, M. S. Thompson, T. Liu, and A. S. Brown. “A 2-GHz Three-Stage AlInAs—GaInAs—InP HEMT MMIC Low-Noise Amplifier.” Ieee Microwave and Guided Wave Letters 3, no. 8 (January 1, 1993): 265–67. https://doi.org/10.1109/75.242220.
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  - Kiziloglu, K., M. M. Hashemi, L. W. Yin, Y. J. Li, P. M. Petroff, U. K. Mishra, and A. S. Brown. “Rapid thermal annealing characteristics of bulk AlInAs/InP and AlInAs/GaInAs/InP high electron mobility transistor structures with planar silicon doping.” Journal of Applied Physics 72, no. 8 (December 1, 1992): 3798–3802. https://doi.org/10.1063/1.352277.
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  - Brown, A. S. “Growth and properties of high mobility strained inverted AlInAs–GaInAs modulation doped structures.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 10, no. 2 (March 1992): 1017–1017. https://doi.org/10.1116/1.586402.
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  - Nguyen, L. D., A. S. Brown, M. A. Thompson, L. M. Jelloian, L. E. Larson, and M. Matloubian. “650-A Self-Aligned-Gate Pseudomorphic Al0.48 In0.52As/Ga0.20In0.80 As High Electron Mobility Transistors.” Ieee Electron Device Letters 13, no. 3 (January 1, 1992): 143–45. https://doi.org/10.1109/55.144991.
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  - Nguyen, L. D., A. S. Brown, M. A. Thompson, L. M. Jelloian, L. E. Larson, and M. Matloubian. “650-angstrom self-aligned-gate pseudomorphic Al_0.48In_0.52As/Ga_0.20In_0.80As high electron mobility transistors.” Electron Device Letters 13, no. 3 (1992): 143–45.
  - Nguyen, L. D., A. S. Brown, M. A. Thompson, and L. M. Jelloian. “50-nm Self-Aligned-Gate Pseudomorphic AlInAs/ GaInAs High Electron Mobility Transistors.” Ieee Transactions on Electron Devices 39, no. 9 (January 1, 1992): 2007–14. https://doi.org/10.1109/16.155871.
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  - Brown, A. S., L. D. Nguyen, R. A. Metzger, M. Matloubian, A. E. Schrnitz, M. Lui, R. G. Wilson, and J. A. Henige. “Reduced silicon movement in GaInAs/AlInAs HEMT structures with low temperature AlInAs spacers.” Institute of Physics Conference Series 120 (December 1, 1991): 281–86.
  - Brown, A. S., R. A. Metzger, J. A. Henige, L. Nguyen, M. Lui, and R. G. Wilson. “Effect of Si movement on the electrical properties of inverted AlInAs-GaInAs modulation doped structures.” Applied Physics Letters 59, no. 27 (December 1, 1991): 3610–12. https://doi.org/10.1063/1.106394.
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  - Matloubian, M., L. D. Nguyen, A. S. Brown, L. E. Larson, M. A. Melendes, and M. A. Thompson. “High power and high efficiency AlInAs/GaInAs on InP HEMTs.” Ieee Mtt S International Microwave Symposium Digest 2 (December 1, 1991): 721–24.
  - Metzger, R. A., A. S. Brown, W. E. Stanchina, M. Lui, R. G. Wilson, T. V. Kargodorian, L. G. McCray, and J. A. Henige. “Growth and characterization of low temperature AlInAs.” Journal of Crystal Growth 111, no. 1–4 (May 2, 1991): 445–49. https://doi.org/10.1016/0022-0248(91)91017-5.
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  - Brown, A. S. “An overview of microwave waveguide technology.” Electrotechnology (Uk) 2, no. 3 (1991): 120–22.
  - Brown, A. S., and M. A. Spackman. “A model study of the κ-refinement procedure for fitting valence electron densities.” Acta Crystallographica Section a Foundations of Crystallography 47, no. 1 (January 1, 1991): 21–29. https://doi.org/10.1107/s0108767390009163.
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  - Schmitz, A. E., L. D. Nguyen, A. S. Brown, and R. A. Metzger. “IIIB-3 InP-Based Inverted High Electron Mobility Transistors.” Ieee Transactions on Electron Devices 38, no. 12 (January 1, 1991): 2702. https://doi.org/10.1109/16.158723.
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  - Mishra, U. K., A. S. Brown, L. M. Jelloian, M. Thompson, S. E. Rosenbaum, L. D. Nguyen, P. M. Solomon, R. Kiehl, and Y. H. Kwark. “Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15 μm gate length.” Proceedings of Spie the International Society for Optical Engineering 1288 (December 1, 1990): 21–29.
  - Brown, A. S. “The effects and implications of ESD on semiconductor technology.” Electrotechnology (Uk) 1, no. 4 (1990): 217–19.
  - Brown, A. S., C. S. Chou, M. J. Delaney, C. E. Hooper, J. F. Jensen, L. E. Larson, U. K. Mishra, L. D. Nguyen, and M. S. Thompson. “Low-temperature buffer AlInAs/GaInAs on InP HEMT technology for ultra-high-speed integrated circuits.” Technical Digest Gaas Ic Symposium (Gallium Arsenide Integrated Circuit), December 1, 1989, 143–46.
  - Delaney, M. J., A. S. Brown, U. K. Mishra, C. S. Chou, L. E. Larson, L. Nguyen, and J. Jensen. “Low temperature MBE growth of GaAs and AlInAs for high speed devices,” December 1, 1989, 64–72.
  - Delaney, M. J., C. S. Chou, L. E. Larson, J. F. Jensen, D. S. Deakin, A. S. Brown, W. W. Hooper, M. A. Thompson, L. G. McCray, and S. E. Rosenbaum. “GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology.” Proceedings of the Custom Integrated Circuits Conference, December 1, 1989. https://doi.org/10.1109/CICC.1989.56782.
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  - Mishra, U. K., A. S. Brown, L. M. Jelloian, M. Thompson, L. D. Nguyen, and S. E. Rosenbaum. “Novel high performance self-aligned 0.15 micron long T-gate AlInAs-GaInAs HEMTs.” Technical Digest International Electron Devices Meeting, December 1, 1989, 101–4.
  - Nguyen, L., A. Brown, M. Delaney, U. Mishra, L. Larson, L. Jelloian, M. Melendes, C. Hooper, and M. Thompson. “Vertical scaling of ultra-high-speed AlInAs-GaInAs HEMTs.” Technical Digest International Electron Devices Meeting, December 1, 1989, 105–8.
  - Mishra, U. K., A. S. Brown, L. M. Jelloian, M. A. Melendes, M. Thompson, S. E. Rosenbaum, and L. E. Larson. “Impact of buffer layer design on the performance of AlInAs-GaInAs HEMT's.” Ieee Transactions on Electron Devices 36, no. 11 pt 1 (November 1, 1989): 2616.
  - Delaney, M. J., C. S. Chou, L. E. Larson, J. F. Jensen, D. S. Deakin, A. S. Brown, W. W. Hooper, M. A. Thompson, L. G. McCray, and S. E. Rosenbaum. “GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology.” Proceedings of the Custom Integrated Circuits Conference, May 1, 1989.
  - Brown, A. S. “The effect of inhibited growth kinetics on GaInAs and AlInAs alloy and interface quality.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 7, no. 2 (March 1989): 384–384. https://doi.org/10.1116/1.584756.
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  - Jensen, J. F., U. K. Mishra, A. S. Brown, L. G. Salmon, and M. J. Delaney. “Ultrahigh speed static and dynamic frequency divider circuits.” Microwave Journal 32, no. 3 (March 1, 1989).
  - Brown, A. S., C. S. Chou, C. E. Hooper, M. A. Melendes, M. Thompson, L. E. Larson, S. E. Rosenbaum, M. J. Delaney, and U. K. Mishra. “AlInAs-GaInAs HEMT’s Utilizing Low-Temperature Alin As Buffers Grown by MBE.” Ieee Electron Device Letters 10, no. 12 (January 1, 1989): 565–67. https://doi.org/10.1109/55.43141.
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  - Brown, A. S., U. K. Mishra, and S. E. Rosenbaum. “The Effect of Interface and Alloy Quality on the DC and RF Performance of Ga0.47In0.53As-Al0.48In0.52As HEMT's.” Ieee Transactions on Electron Devices 36, no. 4 (January 1, 1989): 641–45. https://doi.org/10.1109/16.22468.
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  - Delaney, M. J., C. S. Chou, L. E. Larson, J. F. Jensen, D. S. Deakin, A. S. Brown, W. W. Hooper, M. A. Thompson, L. G. McCRAY, and S. E. Rosenbaum. “Low-Temperature Buffer GaAs MESFET Technology for High-Speed Integrated Circuit Applications.” Ieee Electron Device Letters 10, no. 8 (January 1, 1989): 355–57. https://doi.org/10.1109/55.31755.
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  - Jensen, J. F., U. K. Mishra, A. S. Brown, L. G. Salmon, and M. J. Delaney. “Ultrahigh speed static and dynamic frequency divider circuits.” Microw. J. (Usa) 32, no. 3 (1989): 131–32.
  - Mishra, U. K., A. S. Brown, L. M. Jelloian, M. A. Melendes, M. Thompson, S. E. Rosenbaum, and L. E. Larson. “Impact of buffer layer design on the performance of AlInAs-GaInAs HEMT's.” Ieee Transactions on Electron Devices 36, no. 11 pt 1 (1989): 2616-.
  - Mishra, U. K., A. S. Brown, M. J. Delaney, P. T. Greiling, and C. F. Krumm. “The AlInAs-GaInAs HEMT for Microwave and Millimeter-Wave Applications.” Ieee Transactions on Microwave Theory and Techniques 37, no. 9 (January 1, 1989): 1279–85. https://doi.org/10.1109/22.32210.
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  - Mishra, U. K., J. F. Jensen, D. B. Rensch, A. S. Brown, W. E. Stanchina, R. J. Trew, M. W. Pierce, and T. V. Kargodorian. “Self-aligned AlInAs-GaInAs heterojunction bipolar transistors and circuits.” Electron Device Letters 10, no. 10 (1989): 467–69.
  - Brown, A. S., J. A. Henige, and M. J. Delaney. “Photoluminescence broadening mechanisms in high quality GaInAs-AlInAs quantum well structures.” Applied Physics Letters 52, no. 14 (December 1, 1988): 1142–43. https://doi.org/10.1063/1.99185.
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  - Brown, A. S., U. K. Mishra, J. A. Henige, and M. J. Delaney. “The effect of InP substrate misorientation on GaInAs-AlInAs interface and alloy quality.” Journal of Applied Physics 64, no. 7 (December 1, 1988): 3476–80. https://doi.org/10.1063/1.341482.
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  - Hu, Y. P., P. M. Petroff, X. Qian, and A. S. Brown. “Substrate misorientation effects on the structure and electronic properties of GaInAs-AlInAs interfaces.” Applied Physics Letters 53, no. 22 (December 1, 1988): 2194–96. https://doi.org/10.1063/1.100280.
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  - Jensen, J. F., U. K. Mishra, A. S. Brown, R. S. Beaubien, M. A. Thompson, and L. M. Jelloian. “25 GHz static frequency dividers in AlInAs-GaInAs HEMT technology.” Digest of Technical Papers Ieee International Solid State Circuits Conference 31 (December 1, 1988): 268–69.
  - Mishra, U. K., J. F. Jensen, D. B. Rensch, A. S. Brown, M. W. Pierce, L. G. McCray, T. V. Kargodorian, W. S. Hoefer, and R. E. Kastris. “48 GHz AlInAs/GaInAs heterojunction bipolar transistors.” Technical Digest International Electron Devices Meeting, December 1, 1988, 873–75.
  - Mishra, U. K., and A. S. Brown. “InGaAs/AlInAs HEMT technology for millimeter wave applications.” Technical Digest Gaas Ic Symposium (Gallium Arsenide Integrated Circuit), December 1, 1988, 97–100.
  - Brown, A. S. “The impact of epitaxial layer design and quality on GaInAs/AlInAs high-electron-mobility transistor performance.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 6, no. 2 (March 1988): 678–678. https://doi.org/10.1116/1.584389.
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  - Mishra, U. K., A. S. Brown, L. M. Jelloian, L. H. Hackett, and M. J. Delaney. “High-Performance Submicrometer AlInAs-GalnAs HEMT's.” Ieee Electron Device Letters 9, no. 1 (January 1, 1988): 41–43. https://doi.org/10.1109/55.20407.
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  - Mishra, U. K., A. S. Brown, S. E. Rosenbaum, C. E. Hooper, M. W. Pierce, M. J. Delaney, S. Vaughn, and K. White. “Microwave Performance of AlInAs-GalnAs HEMT's with 0.2- and 0.1-μm Gate Length.” Ieee Electron Device Letters 9, no. 12 (January 1, 1988): 647–49. https://doi.org/10.1109/55.20424.
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  - Mishra, U. K., A. S. Brown, S. E. Rosenbaum, M. J. Delaney, S. Vaughn, and K. White. “IIIB-4 Noise Performance of Submicrometer AlInAs-GaInAs HEMT's.” Ieee Transactions on Electron Devices 35, no. 12 (January 1, 1988): 2441. https://doi.org/10.1109/16.8861.
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  - Mishra, U. K., A. S. Brown, and S. E. Rosenbaum. “DC and RF performance of 0.1 μm gate length Al_.48In_.52As-Ga_.38In_.62As pseudomorphic HEMT's.” Technical Digest International Electron Devices Meeting, 1988, 180–83.
  - Mishra, U. K., J. F. Jensen, A. S. Brown, M. A. Thompson, L. M. Jelloian, and R. S. Beaubien. “Ultrahigh-speed Digital Circuit Performance in 0.2-μm Gate-Length AlInAs/GalnAs HEMT Technology.” Ieee Electron Device Letters 9, no. 9 (January 1, 1988): 482–84. https://doi.org/10.1109/55.6952.
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  - Mishra, U. K., R. S. Beaubien, M. J. Delaney, A. S. Brown, and L. H. Hackett. “LOW NOISE 0. 1- mu m GaAs MESFETS BY MBE.,” December 1, 1987, 177–89.
  - Mishra, U. K., A. S. Brown, L. M. Jelloian, L. H. Hackett, and M. J. Delaney. “HIGH PERFORMANCE SUBMICROMETER ALINAS-GAINAS HEMT'S.” Ieee Transactions on Electron Devices ED-34, no. 11 (November 1, 1987).
  - Griem, H. T. “Molecular-beam epitaxial growth and characterization of strained GaInAs/AlInAs and InAs/GaAs quantum well two-dimensional electron gas field-effect transistors.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 5, no. 3 (May 1987): 785–785. https://doi.org/10.1116/1.583751.
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  - Griem, H. T., K. H. Hsieh, I. J. D’Haenens, M. J. Delaney, J. A. Henige, G. W. Wicks, and A. S. Brown. “Characterization of strained GaInAs/AlInAs quantum well TEGFETS grown by molecular beam epitaxy.” Journal of Crystal Growth 81, no. 1–4 (February 2, 1987): 383–90. https://doi.org/10.1016/0022-0248(87)90421-0.
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  - Mishra, U. K., A. S. Brown, L. M. Jelloian, L. H. Hackett, and M. J. Delaney. “HIGH PERFORMANCE SUBMICROMETER ALINAS-GAINAS HEMT'S.” Ieee Transactions on Electron Devices ED-34, no. 11 (1987): 4.
  - Mishra, U. K., J. F. Jensen, A. S. Brown, R. S. Beaubien, and L. M. Jelloian. “ULTRA-HIGH SPEED AlInAs-GaInAs HEMT TECHNOLOGY.” Technical Digest International Electron Devices Meeting, January 1, 1987, 879–80. https://doi.org/10.1109/iedm.1987.191580.
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  - Palmateer, L. F., P. J. Tasker, T. Itoh, A. S. Brown, G. W. Wicks, and L. F. Eastman. “Microwave characterisation of 1 μm-gate al0.48ln0.52as/ga0.47ln0.53as/lnp modfets.” Electronics Letters 23, no. 1 (January 1, 1987): 53–55. https://doi.org/10.1049/el:19870039.
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  - Brown, A. S., T. Itoh, G. Wicks, and L. F. Eastman. “Si diffusion in GaInAs-AlInAs high-electron-mobility transistor structures.” Journal of Applied Physics 60, no. 10 (December 1, 1986): 3495–98. https://doi.org/10.1063/1.337600.
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  - Itoh, T., A. S. Brown, L. H. Camnitz, G. W. Wicks, J. D. Berry, and L. F. Eastman. “DEPLETION- AND ENHANCEMENT-MODE Al//0//. //4//8In//0//. //5//2As/Ga//0//. //4//7In//0//. //5//3As MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH A RECESSED GATE STRUCTURE.” Institute of Physics Conference Series, no. 79 (December 1, 1986): 571–76.
  - Mishra, U. K., R. S. Beaubien, M. J. Delaney, A. S. Brown, and L. H. Hackett. “MBE GROWN GaAs MESFETS WITH ULTRA-HIGH G//M AND F//T.” Technical Digest International Electron Devices Meeting, December 1, 1986, 829–31.
  - Brown, A. S. “Summary Abstract: Mn redistribution in doped GaInAs.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 4, no. 2 (March 1986): 543–543. https://doi.org/10.1116/1.583424.
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  - Itoh, T., A. S. Brown, L. H. Camnitz, G. W. Wicks, J. D. Berry, and L. F. Eastman. “RECESSED GATE Al//0 //. //4 //8 In//0 //. //5 //2 As/Ga//0 //. //4 //7 In//0 //. //5 //3 As MODULATION DOPED FIELD EFFECT TRANSISTOR.,” December 1, 1985, 92–101.
  - Brown, A. S., S. C. Palmateer, G. W. Wicks, L. F. Eastman, and A. R. Calawa. “The behavior of unintentional impurities in Ga0.47 In0.53As grown by MBE.” Journal of Electronic Materials 14, no. 3 (May 1, 1985): 367–78. https://doi.org/10.1007/BF02661228.
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  - Brown, A. S., S. C. Palmateer, G. W. Wicks, L. F. Eastman, A. R. Calawa, and C. Hitzman. “HEAT TREATMENT OF FE-DOPED INP SUBSTRATES FOR THE GROWTH OF HIGHER PURITY GA//0 //. //4 //7 IN//0 //. //5 //3 AS BY MBE.,” December 1, 1984, 36–40.
  - Brown, A. S., G. W. Wicks, L. F. Eastman, and S. C. Palmateer. “DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF MBE Ga//0//. //4//7In//0//. //5//3As PLANAR DOPED BARRIERS ON InP SUBSTRATES.” Journal of Vacuum Science &Amp; Technology B: Microelectronics Processing and Phenomena 2, no. 2 (April 1, 1983): 194–96. https://doi.org/10.1116/1.582777.
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- Book Sections
  - Brown, A. S., and M. Losurdo. “In Situ Characterization of Epitaxy.” In Handbook of Crystal Growth: Thin Films and Epitaxy: Second Edition, 3:1169–1209, 2015. https://doi.org/10.1016/B978-0-444-63304-0.00029-9.
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  - Losurdo, M., A. S. Brown, and G. Bruno. “Real-time ellipsometry for probing charge-transfer processes at the nanoscale.” In Ellipsometry at the Nanoscale, 453–91, 2013. https://doi.org/10.1007/978-3-642-33956-1.
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- Conference Papers
  - Losurdo, M., Y. Gutierrez, M. M. Giangregorio, J. Humlicek, F. Moreno, and A. Brown. “Multiphase gallium-based nanoparticles for a versatile plasmonic platform.” In Optics Infobase Conference Papers, Vol. Part F107-NOMA 2018, 2018. https://doi.org/10.1364/NOMA.2018.NoTh3D.4.
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  - Sanz, J. M., D. Ortiz, R. Alcaraz de la Osa, J. M. Saiz, F. González, A. S. Brown, M. Losurdo, H. O. Everitt, and F. Moreno. “Metals for UV plasmonics.” In Optics Infobase Conference Papers, 2014. https://doi.org/10.1364/opm.2014.ow4d.3.
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  - Li, B., C. Yi, A. Brown, M. C. Fischer, and W. S. Warren. “Homodyne near-degenerate four-wave-mixing microscopy for graphene imaging and biomedical applications.” In 2012 Conference on Lasers and Electro Optics, Cleo 2012, 2012.
  - Li, B., C. Yi, A. Brown, M. C. Fischer, and W. S. Warren. “Homodyne near-degenerate four-wave-mixing microscopy for graphene imaging and biomedical applications.” In Cleo: Science and Innovations, Cleo Si 2012, 2012. https://doi.org/10.1364/cleo_si.2012.cf1b.3.
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  - Wu, P. C., M. Losurdo, T. H. Kim, G. Bruno, A. S. Brown, and H. O. Everitt. “Novel, real-time measurement of plasmon resonance - tailoring nanoparticle geometry optically.” In Optics Infobase Conference Papers, 2008. https://doi.org/10.1364/oft.2008.jwd36.
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  - Brown, A., G. Ybarra, H. Massoud, J. Board, J. Holmes, K. Coonley, L. Collins, L. Huettel, M. Gustafson, and S. Cummer. “Redesign of the core curriculum at Duke University.” In Asee Annual Conference and Exposition, Conference Proceedings, 2006.
  - Brown, A., G. Ybarra, H. Massoud, J. Board, J. Holmes, K. Coonley, L. Collins, L. Huettel, M. Gustafson, and S. Cummer. “Redesign of the core curriculum at Duke University.” In Asee Annual Conference and Exposition, Conference Proceedings, 2006.
  - Huettel, L., A. Brown, L. Collins, K. Coonley, M. Gustafson, J. Kim, and G. Ybarra. “A novel introductory course for teaching the fundamentals of electrical and computer engineering.” In Asee Annual Conference and Exposition, Conference Proceedings, 2006.
  - Huettel, L., A. Brown, L. Collins, K. Coonley, M. Gustafson, J. Kim, and G. Ybarra. “A novel introductory course for teaching the fundamentals of electrical and computer engineering.” In Asee Annual Conference and Exposition, Conference Proceedings, 2006.
  - Collins, L. M., L. G. Huettel, A. S. Brown, G. A. Ybarra, J. S. Holmes, J. A. Board, S. A. Cummer, M. R. Gustafson, J. Kim, and H. Z. Massoud. “Theme-based redesign of the duke university ECE curriculum: The first steps.” In Asee Annual Conference and Exposition, Conference Proceedings, 14313–26, 2005.
  - Huettel, L., A. Brown, M. Gustafson, H. Massoud, G. Ybarra, and L. Collins. “Work in progress: Theme-based redesign of an electrical and computer engineering curriculum.” In Proceedings Frontiers in Education Conference, Fie, Vol. 3, 2004.
  - Losurdo, M., P. Capezzuto, G. Bruno, G. Namkoong, W. A. Doolittle, and A. S. Brown. “Plasmas for the low-temperature growth of high-quality GaN films by molecular beam epitaxy and remote plasma MOCVD.” In Physica Status Solidi (A) Applied Research, 190:43–51, 2002. https://doi.org/10.1002/1521-396X(200203)190:1<43::AID-PSSA43>3.0.CO;2-G.
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  - Triplett, G., G. May, and A. Brown. “Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks.” In 2001 International Semiconductor Device Research Symposium, Isdrs 2001 Proceedings, 264–65, 2001. https://doi.org/10.1109/ISDRS.2001.984491.
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  - Brown, T., K. Lee, G. Dagnall, R. Kromann, R. Bicknell-Tassius, A. Brown, J. Dorsey, and G. May. “Modeling MBE RHEED signals using PCA and neural networks.” In Proceedings of the Ieee 24th International Symposium on Compound Semiconductors, Iscs 1997, 33–36, 1997. https://doi.org/10.1109/ISCS.1998.711537.
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  - Brown, J. J., A. S. Brown, S. E. Rosenbaum, A. S. Schmitz, M. Matloubian, L. E. Larson, M. A. Melendes, and M. A. Thompson. “Study of the dependence of Ga 0.47 In 0.53 As/Al x In 1-x As power HEMT breakdown voltage on schottky layer design and device layout.” In Device Research Conference Conference Digest, Drc, Vol. Part F146191, 1993. https://doi.org/10.1109/DRC.1993.1009579.
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  - Mishra, U. K., A. S. Brown, and S. E. Rosenbaum. “DC and RF performance of 0.1 μm gate length Al.48In.52As-Ga.38In.62As pseudomorphic HEMT's.” In Technical Digest International Electron Devices Meeting, 180–83, 1988.
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