Phosphorus and aluminum gettering of gold in silicon: simulation and optimization considerations
Using the diffusion-segregation equation, modeling and simulations of gettering Au (a substitutional-interstitial species in Si) away from the Si bulk have been performed. Three external gettering schemes have been considered: wafer frontside P indiffusion gettering, wafer backside Al deposition gettering, and a combination of the two processes. Under the same processing conditions, it has been shown that P indiffusion gettering is faster than Al gettering, but P gettering has a lower gettering capacity and is less stable than Al gettering for longer gettering times. The combined P and Al gettering process is as fast as P gettering in reaching an optimum gettered state, and possesses the capacity and stability of the Al gettering process.
Gafiteanu, R; Gosele, U; Tan, TY
Materials Research Society Symposium - Proceedings
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