Phosphorus and aluminum gettering of gold in silicon: simulation and optimization considerations


Journal Article

Using the diffusion-segregation equation, modeling and simulations of gettering Au (a substitutional-interstitial species in Si) away from the Si bulk have been performed. Three external gettering schemes have been considered: wafer frontside P indiffusion gettering, wafer backside Al deposition gettering, and a combination of the two processes. Under the same processing conditions, it has been shown that P indiffusion gettering is faster than Al gettering, but P gettering has a lower gettering capacity and is less stable than Al gettering for longer gettering times. The combined P and Al gettering process is as fast as P gettering in reaching an optimum gettered state, and possesses the capacity and stability of the Al gettering process.

Duke Authors

Cited Authors

  • Gafiteanu, R; Gosele, U; Tan, TY

Published Date

  • December 1, 1995

Published In

Volume / Issue

  • 378 /

Start / End Page

  • 297 - 302

International Standard Serial Number (ISSN)

  • 0272-9172

Citation Source

  • Scopus