Oriented Si and Ge nanocrystals formed in Al2O3 by ion implantation and annealing

Journal Article

Ion implantation followed by thermal annealing in a reducing atmosphere has been used to create a high density of oriented Si and Ge nanocrystals in (0001) Al2O3. Both types of nanocrystals are three-dimensionally aligned with respect to the Al2O3 matrix, but the orientational relationships are different, and the two types of nanocrystals have different shapes in Al2O3. Implantation of Si and Ge in fused silica also produces nanocrystals, but in this case, the nanocrystals are randomly oriented relative to each other.

Duke Authors

Cited Authors

  • White, CW; Budai, JD; Withrow, SP; Pennycook, SJ; Hembree, DM; Zhou, DS; Vo-Dinh, T; Magruder, RH

Published Date

  • January 1, 1994

Published In

Volume / Issue

  • 316 /

Start / End Page

  • 487 - 491

International Standard Serial Number (ISSN)

  • 0272-9172

Citation Source

  • Scopus