Scholars@Duke publication: Oriented Si and Ge nanocrystals formed in Al2O3 by ion implantation and annealing

Oriented Si and Ge nanocrystals formed in Al2O3 by ion implantation and annealing

Publication , Journal Article

White, CW; Budai, JD; Withrow, SP; Pennycook, SJ; Hembree, DM; Zhou, DS; Vo-Dinh, T; Magruder, RH

Published in: Materials Research Society Symposium Proceedings

January 1, 1994

Ion implantation followed by thermal annealing in a reducing atmosphere has been used to create a high density of oriented Si and Ge nanocrystals in (0001) Al2O3. Both types of nanocrystals are three-dimensionally aligned with respect to the Al2O3 matrix, but the orientational relationships are different, and the two types of nanocrystals have different shapes in Al2O3. Implantation of Si and Ge in fused silica also produces nanocrystals, but in this case, the nanocrystals are randomly oriented relative to each other.

Duke Scholars

Author Tuan Vo-Dinh Biomedical Engineering

Published In

Materials Research Society Symposium Proceedings

ISSN

0272-9172

Publication Date

January 1, 1994

Volume

316

Start / End Page

487 / 491

Citation

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White, C. W., Budai, J. D., Withrow, S. P., Pennycook, S. J., Hembree, D. M., Zhou, D. S., … Magruder, R. H. (1994). Oriented Si and Ge nanocrystals formed in Al2O3 by ion implantation and annealing. Materials Research Society Symposium Proceedings, 316, 487–491.

White, C. W., J. D. Budai, S. P. Withrow, S. J. Pennycook, D. M. Hembree, D. S. Zhou, T. Vo-Dinh, and R. H. Magruder. “Oriented Si and Ge nanocrystals formed in Al2O3 by ion implantation and annealing.” Materials Research Society Symposium Proceedings 316 (January 1, 1994): 487–91.

White CW, Budai JD, Withrow SP, Pennycook SJ, Hembree DM, Zhou DS, et al. Oriented Si and Ge nanocrystals formed in Al2O3 by ion implantation and annealing. Materials Research Society Symposium Proceedings. 1994 Jan 1;316:487–91.

White, C. W., et al. “Oriented Si and Ge nanocrystals formed in Al2O3 by ion implantation and annealing.” Materials Research Society Symposium Proceedings, vol. 316, Jan. 1994, pp. 487–91.

White CW, Budai JD, Withrow SP, Pennycook SJ, Hembree DM, Zhou DS, Vo-Dinh T, Magruder RH. Oriented Si and Ge nanocrystals formed in Al2O3 by ion implantation and annealing. Materials Research Society Symposium Proceedings. 1994 Jan 1;316:487–491.

Published In

Materials Research Society Symposium Proceedings

ISSN

0272-9172

Publication Date

January 1, 1994

Volume

316

Start / End Page

487 / 491