DISLOCATION NUCLEATION MODELS FROM POINT DEFECT CONDENSATIONS IN SILICON AND GERMANIUM.
Publication
, Journal Article
Tan, TY
Published in: Mat Res Soc Symp Proc
December 1, 1981
Duke Scholars
Published In
Mat Res Soc Symp Proc
Publication Date
December 1, 1981
Volume
2
Start / End Page
163 / 172
Citation
APA
Chicago
ICMJE
MLA
NLM
Tan, T. Y. (1981). DISLOCATION NUCLEATION MODELS FROM POINT DEFECT CONDENSATIONS IN SILICON AND GERMANIUM. Mat Res Soc Symp Proc, 2, 163–172.
Tan, T. Y. “DISLOCATION NUCLEATION MODELS FROM POINT DEFECT CONDENSATIONS IN SILICON AND GERMANIUM.” Mat Res Soc Symp Proc 2 (December 1, 1981): 163–72.
Tan TY. DISLOCATION NUCLEATION MODELS FROM POINT DEFECT CONDENSATIONS IN SILICON AND GERMANIUM. Mat Res Soc Symp Proc. 1981 Dec 1;2:163–72.
Tan, T. Y. “DISLOCATION NUCLEATION MODELS FROM POINT DEFECT CONDENSATIONS IN SILICON AND GERMANIUM.” Mat Res Soc Symp Proc, vol. 2, Dec. 1981, pp. 163–72.
Tan TY. DISLOCATION NUCLEATION MODELS FROM POINT DEFECT CONDENSATIONS IN SILICON AND GERMANIUM. Mat Res Soc Symp Proc. 1981 Dec 1;2:163–172.
Published In
Mat Res Soc Symp Proc
Publication Date
December 1, 1981
Volume
2
Start / End Page
163 / 172