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Structural investigation of nanocrystalline graphene grown on (6√3 × 6√3)R30°-reconstructed SiC surfaces by molecular beam epitaxy

Publication ,  Journal Article
Schumann, T; Dubslaff, M; Oliveira, MH; Hanke, M; Fromm, F; Seyller, T; Nemec, L; Blum, V; Scheffler, M; Lopes, JMJ; Riechert, H
Published in: New Journal of Physics
December 1, 2013

Growth of nanocrystalline graphene films on (6√3 × 6√3)R30°-reconstructed SiC surfaces was achieved by molecular beam epitaxy, enabling the investigation of quasi-homoepitaxial growth. The structural quality of the graphene films, which is investigated by Raman spectroscopy, increases with growth time. X-ray photoelectron spectroscopy proves that the SiC surface reconstruction persists throughout the growth process and that the synthesized films consist of sp2-bonded carbon. Interestingly, grazing incidence x-ray diffraction measurements show that the graphene domains possess one single in-plane orientation, are aligned to the substrate, and offer a noticeably contracted lattice parameter of 2.450 Å. We correlate this contraction with theoretically calculated reference values (all-electron density functional calculations based on the van der Waals corrected Perdew-Burke-Ernzerhof functional) for the lattice parameter contraction induced in ideal, free-standing graphene sheets by: substrate-induced buckling, the edges of limited-size flakes and typical point defects (monovacancies, divacancies, Stone-Wales defects). © IOP Publishing and Deutsche Physikalische Gesellschaft.

Duke Scholars

Published In

New Journal of Physics

DOI

ISSN

1367-2630

Publication Date

December 1, 2013

Volume

15

Related Subject Headings

  • Fluids & Plasmas
  • 51 Physical sciences
  • 02 Physical Sciences
 

Citation

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Schumann, T., Dubslaff, M., Oliveira, M. H., Hanke, M., Fromm, F., Seyller, T., … Riechert, H. (2013). Structural investigation of nanocrystalline graphene grown on (6√3 × 6√3)R30°-reconstructed SiC surfaces by molecular beam epitaxy. New Journal of Physics, 15. https://doi.org/10.1088/1367-2630/15/12/123034
Schumann, T., M. Dubslaff, M. H. Oliveira, M. Hanke, F. Fromm, T. Seyller, L. Nemec, et al. “Structural investigation of nanocrystalline graphene grown on (6√3 × 6√3)R30°-reconstructed SiC surfaces by molecular beam epitaxy.” New Journal of Physics 15 (December 1, 2013). https://doi.org/10.1088/1367-2630/15/12/123034.
Schumann T, Dubslaff M, Oliveira MH, Hanke M, Fromm F, Seyller T, et al. Structural investigation of nanocrystalline graphene grown on (6√3 × 6√3)R30°-reconstructed SiC surfaces by molecular beam epitaxy. New Journal of Physics. 2013 Dec 1;15.
Schumann, T., et al. “Structural investigation of nanocrystalline graphene grown on (6√3 × 6√3)R30°-reconstructed SiC surfaces by molecular beam epitaxy.” New Journal of Physics, vol. 15, Dec. 2013. Scopus, doi:10.1088/1367-2630/15/12/123034.
Schumann T, Dubslaff M, Oliveira MH, Hanke M, Fromm F, Seyller T, Nemec L, Blum V, Scheffler M, Lopes JMJ, Riechert H. Structural investigation of nanocrystalline graphene grown on (6√3 × 6√3)R30°-reconstructed SiC surfaces by molecular beam epitaxy. New Journal of Physics. 2013 Dec 1;15.
Journal cover image

Published In

New Journal of Physics

DOI

ISSN

1367-2630

Publication Date

December 1, 2013

Volume

15

Related Subject Headings

  • Fluids & Plasmas
  • 51 Physical sciences
  • 02 Physical Sciences