Skip to main content
Journal cover image

High-mobility p-type transistor based on a spin-coated metal telluride semiconductor

Publication ,  Journal Article
Mitzi, DB; Copel, M; Murray, CE
Published in: Advanced Materials
September 18, 2006

The deposition of p-type CuInTe2 as the telluride-based semiconductor, was investigated. Structurally, the CuInTe2 chalcopyrite can be integrated as a II-VI zinc-blende analog, with the Zn atoms of the archetypal ZnS structure. The structure is alternatively substituted by Cu and In atoms leading to a doubling of the basis cubic unit cell along the z-direction. A new stepwise process was devised for dissolution, which involved separate indium and copper based precursor solutions. A soluble In 2Te3 precursor, with approximate composition was prepared by stirring In2Te3 in hydrazine at room temperature and evaporating the resulting solution. Thermal decomposition of the nominally amorphous precursor began at near-ambient temperatures. Films of binary In 2Te3 can also be prepared by either drop-casting or spin-coating the In2Te3 precursor solution, using a low-temperature heat treatment.

Duke Scholars

Altmetric Attention Stats
Dimensions Citation Stats

Published In

Advanced Materials

DOI

ISSN

0935-9648

Publication Date

September 18, 2006

Volume

18

Issue

18

Start / End Page

2448 / 2452

Related Subject Headings

  • Nanoscience & Nanotechnology
  • 51 Physical sciences
  • 40 Engineering
  • 34 Chemical sciences
  • 09 Engineering
  • 03 Chemical Sciences
  • 02 Physical Sciences
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Mitzi, D. B., Copel, M., & Murray, C. E. (2006). High-mobility p-type transistor based on a spin-coated metal telluride semiconductor. Advanced Materials, 18(18), 2448–2452. https://doi.org/10.1002/adma.200600157
Mitzi, D. B., M. Copel, and C. E. Murray. “High-mobility p-type transistor based on a spin-coated metal telluride semiconductor.” Advanced Materials 18, no. 18 (September 18, 2006): 2448–52. https://doi.org/10.1002/adma.200600157.
Mitzi DB, Copel M, Murray CE. High-mobility p-type transistor based on a spin-coated metal telluride semiconductor. Advanced Materials. 2006 Sep 18;18(18):2448–52.
Mitzi, D. B., et al. “High-mobility p-type transistor based on a spin-coated metal telluride semiconductor.” Advanced Materials, vol. 18, no. 18, Sept. 2006, pp. 2448–52. Scopus, doi:10.1002/adma.200600157.
Mitzi DB, Copel M, Murray CE. High-mobility p-type transistor based on a spin-coated metal telluride semiconductor. Advanced Materials. 2006 Sep 18;18(18):2448–2452.
Journal cover image

Published In

Advanced Materials

DOI

ISSN

0935-9648

Publication Date

September 18, 2006

Volume

18

Issue

18

Start / End Page

2448 / 2452

Related Subject Headings

  • Nanoscience & Nanotechnology
  • 51 Physical sciences
  • 40 Engineering
  • 34 Chemical sciences
  • 09 Engineering
  • 03 Chemical Sciences
  • 02 Physical Sciences