Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties
Publication
, Journal Article
Park, HH; Jayaraman, A; Heasley, R; Yang, C; Hartle, L; Mankad, R; Haight, R; Mitzi, DB; Gunawan, O; Gordon, RG
Published in: Applied Physics Letters
November 17, 2014
Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were incorporated with aluminum to adjust the carrier concentration. The electron carrier concentration increased up to one order of magnitude from 1019 to 1020 cm-3 with aluminum incorporation and sulfur content in the range of 0 ≤ S/(Zn+Al) ≤ 0.16. However, the carrier concentration decreased by five orders of magnitude from 1019 to 1014 cm-3 for S/(Zn+Al) = 0.34 and decreased even further when S/(Zn+Al) > 0.34. Such tunable electrical properties are potentially useful for graded buffer layers in thin-film photovoltaic applications.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
November 17, 2014
Volume
105
Issue
20
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
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ICMJE
MLA
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Park, H. H., Jayaraman, A., Heasley, R., Yang, C., Hartle, L., Mankad, R., … Gordon, R. G. (2014). Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties. Applied Physics Letters, 105(20). https://doi.org/10.1063/1.4901899
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
November 17, 2014
Volume
105
Issue
20
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences