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GaAs1-yBiy Raman signatures: Illuminating relationships between the electrical and optical properties of GaAs1-yBiy and Bi incorporation

Publication ,  Journal Article
Li, J; Forghani, K; Guan, Y; Jiao, W; Kong, W; Collar, K; Kim, TH; Kuech, TF; Brown, AS
Published in: AIP Advances
June 1, 2015
Published version (DOI)

We report the use of two Raman signatures, the Bi-induced longitudinal-optical-plasmon-coupled (LOPC) mode and the GaAs Fröhlich scattering intensity, present in nominally undoped (100) GaAs1-yBiy to predict the 300K photoluminescence intensity and Bi composition (y) in GaAs1-yBiy. The LOPC mode is used to calculate the hole concentration in GaAs1-yBiy epitaxial layers. A linear relationship between hole concentration and photoluminescence intensity is found for a range of samples grown at various temperatures and growth rates. In addition, the composition (y) of Bi in GaAs1-yBiy is also found to be linearly related to the GaAs Fröhlich scattering intensity.

Duke Scholars

April S. Brown
Author April S. Brown Electrical and Computer Engineering

Published In

AIP Advances

DOI

10.1063/1.4922139

EISSN

2158-3226

Publication Date

June 1, 2015

Volume

5

Issue

6

Related Subject Headings

  • 51 Physical sciences
  • 40 Engineering
  • 0906 Electrical and Electronic Engineering
  • 0206 Quantum Physics
  • 0205 Optical Physics
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Li, J., Forghani, K., Guan, Y., Jiao, W., Kong, W., Collar, K., … Brown, A. S. (2015). GaAs1-yBiy Raman signatures: Illuminating relationships between the electrical and optical properties of GaAs1-yBiy and Bi incorporation. AIP Advances, 5(6). https://doi.org/10.1063/1.4922139
Li, J., K. Forghani, Y. Guan, W. Jiao, W. Kong, K. Collar, T. H. Kim, T. F. Kuech, and A. S. Brown. “GaAs1-yBiy Raman signatures: Illuminating relationships between the electrical and optical properties of GaAs1-yBiy and Bi incorporation.” AIP Advances 5, no. 6 (June 1, 2015). https://doi.org/10.1063/1.4922139.
Li J, Forghani K, Guan Y, Jiao W, Kong W, Collar K, et al. GaAs1-yBiy Raman signatures: Illuminating relationships between the electrical and optical properties of GaAs1-yBiy and Bi incorporation. AIP Advances. 2015 Jun 1;5(6).
Li, J., et al. “GaAs1-yBiy Raman signatures: Illuminating relationships between the electrical and optical properties of GaAs1-yBiy and Bi incorporation.” AIP Advances, vol. 5, no. 6, June 2015. Scopus, doi:10.1063/1.4922139.
Li J, Forghani K, Guan Y, Jiao W, Kong W, Collar K, Kim TH, Kuech TF, Brown AS. GaAs1-yBiy Raman signatures: Illuminating relationships between the electrical and optical properties of GaAs1-yBiy and Bi incorporation. AIP Advances. 2015 Jun 1;5(6).

Published In

AIP Advances

DOI

10.1063/1.4922139

EISSN

2158-3226

Publication Date

June 1, 2015

Volume

5

Issue

6

Related Subject Headings

  • 51 Physical sciences
  • 40 Engineering
  • 0906 Electrical and Electronic Engineering
  • 0206 Quantum Physics
  • 0205 Optical Physics