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Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy

Publication ,  Journal Article
Kong, W; Roberts, AT; Jiao, WY; Fournelle, J; Kim, TH; Losurdo, M; Everitt, HO; Brown, AS
Published in: Applied Physics Letters
September 28, 2015
Published version (DOI)

Thin films of the wide bandgap quaternary semiconductor InxAlyGa(1-x-y)N with low In (x=0.01-0.05) and high Al composition (y=0.40-0.49) were synthesized on GaN templates by plasma-assisted molecular beam epitaxy. High-resolution X-ray diffraction was used to correlate the strain accommodation of the films to composition. Room temperature ultraviolet B (280nm-320nm) photoluminescence intensity increased with increasing In composition, while the Stokes shift remained relatively constant. The data suggest a competition between radiative and non-radiative recombination occurs for carriers, respectively, localized at centers produced by In incorporation and at dislocations produced by strain relaxation.

Duke Scholars

April S. Brown
Author April S. Brown Electrical and Computer Engineering

Published In

Applied Physics Letters

DOI

10.1063/1.4931942

ISSN

0003-6951

Publication Date

September 28, 2015

Volume

107

Issue

13

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences
 

Citation

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Kong, W., Roberts, A. T., Jiao, W. Y., Fournelle, J., Kim, T. H., Losurdo, M., … Brown, A. S. (2015). Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 107(13). https://doi.org/10.1063/1.4931942
Kong, W., A. T. Roberts, W. Y. Jiao, J. Fournelle, T. H. Kim, M. Losurdo, H. O. Everitt, and A. S. Brown. “Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy.” Applied Physics Letters 107, no. 13 (September 28, 2015). https://doi.org/10.1063/1.4931942.
Kong W, Roberts AT, Jiao WY, Fournelle J, Kim TH, Losurdo M, et al. Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy. Applied Physics Letters. 2015 Sep 28;107(13).
Kong, W., et al. “Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy.” Applied Physics Letters, vol. 107, no. 13, Sept. 2015. Scopus, doi:10.1063/1.4931942.
Kong W, Roberts AT, Jiao WY, Fournelle J, Kim TH, Losurdo M, Everitt HO, Brown AS. Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy. Applied Physics Letters. 2015 Sep 28;107(13).

Published In

Applied Physics Letters

DOI

10.1063/1.4931942

ISSN

0003-6951

Publication Date

September 28, 2015

Volume

107

Issue

13

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences