Skip to main content

Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying in composition

Publication ,  Journal Article
Jiao, W; Kong, W; Li, J; Collar, K; Kim, TH; Losurdo, M; Brown, AS
Published in: AIP Advances
March 1, 2016

Angle-resolved X-ray photoelectron spectroscopy (XPS) is used in this work to experimentally determine the valence band offsets of molecular beam epitaxy (MBE)-grown InAlN/GaN heterostructures with varying indium composition. We find that the internal electric field resulting from polarization must be taken into account when analyzing the XPS data. Valence band offsets of 0.12 eV for In0.18Al0.82N, 0.15 eV for In0.17Al0.83N, and 0.23 eV for In0.098Al0.902N with GaN are obtained. The results show that a compositional-depended bowing parameter is needed in order to estimate the valence band energies of InAlN as a function of composition in relation to those of the binary endpoints, AlN and InN.

Duke Scholars

Published In

AIP Advances

DOI

EISSN

2158-3226

Publication Date

March 1, 2016

Volume

6

Issue

3

Related Subject Headings

  • 51 Physical sciences
  • 40 Engineering
  • 0906 Electrical and Electronic Engineering
  • 0206 Quantum Physics
  • 0205 Optical Physics
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Jiao, W., Kong, W., Li, J., Collar, K., Kim, T. H., Losurdo, M., & Brown, A. S. (2016). Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying in composition. AIP Advances, 6(3). https://doi.org/10.1063/1.4944502
Jiao, W., W. Kong, J. Li, K. Collar, T. H. Kim, M. Losurdo, and A. S. Brown. “Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying in composition.” AIP Advances 6, no. 3 (March 1, 2016). https://doi.org/10.1063/1.4944502.
Jiao W, Kong W, Li J, Collar K, Kim TH, Losurdo M, et al. Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying in composition. AIP Advances. 2016 Mar 1;6(3).
Jiao, W., et al. “Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying in composition.” AIP Advances, vol. 6, no. 3, Mar. 2016. Scopus, doi:10.1063/1.4944502.
Jiao W, Kong W, Li J, Collar K, Kim TH, Losurdo M, Brown AS. Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying in composition. AIP Advances. 2016 Mar 1;6(3).

Published In

AIP Advances

DOI

EISSN

2158-3226

Publication Date

March 1, 2016

Volume

6

Issue

3

Related Subject Headings

  • 51 Physical sciences
  • 40 Engineering
  • 0906 Electrical and Electronic Engineering
  • 0206 Quantum Physics
  • 0205 Optical Physics