On the Doping Dependence of Oxidation-Induced Stacking Fault Shrinkage in Silicon

The effect of dopant concentration on the shrinkage of oxidation-induced stacking faults (OSF) in silicon during N2 annealing has been controversial. In this work, we demonstrate that OSF shrinkage during N2 annealing can be enhanced by the presence of relatively shallow phosphorus-implanted layers. The shrinkage rate shows a doping dependence that is consistent with vacancy absorption that increases with doping. However, at intrinsic doping concentrations it is argued that the faults shrink by emitting self interstitials. © 1982, The Electrochemical Society, Inc. All rights reserved.

Duke Scholars

Author Richard B. Fair Electrical and Computer Engineering