Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks
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Triplett, G; May, G; Brown, A
Published in: 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings
January 1, 2001
Statistical experimental design was used to explore the effects of the HEMT channel growth parameters on device performance. A 22 full-factorial central composite circumscribed Box-Wilson design with three center points was implemented. The growth parameters under investigation were the channel growth temperature and interface formation, both of which greatly impact device operation. Interface formation was defined as the method used to form the InAs/AlSb interface.
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2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings
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January 1, 2001
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264 / 265
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Triplett, G., May, G., & Brown, A. (2001). Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks. In 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings (pp. 264–265). https://doi.org/10.1109/ISDRS.2001.984491
Triplett, G., G. May, and A. Brown. “Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks.” In 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings, 264–65, 2001. https://doi.org/10.1109/ISDRS.2001.984491.
Triplett G, May G, Brown A. Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks. In: 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings. 2001. p. 264–5.
Triplett, G., et al. “Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks.” 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings, 2001, pp. 264–65. Scopus, doi:10.1109/ISDRS.2001.984491.
Triplett G, May G, Brown A. Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks. 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings. 2001. p. 264–265.
Published In
2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings
DOI
Publication Date
January 1, 2001
Start / End Page
264 / 265