Impact of buffer layer design on the performance of AlInAs-GaInAs HEMT's

Summary form only given. The authors report a study of the impact of buffer layer design on the characteristics of Al0.48In0.52As-Ga0.47In0.53As HEMTs (high-electron-mobility transistors). The aim of the study is to understand and correct the problem of high output conductance observed in devices with a high transconductance. Devices with 1.0-μm gate lengths were fabricated using modulation-doped Al0.48In0.52As-Ga0.47In0.53As epitaxial layes which had sheet charge densities between 3 × 1012 and 3.5 × 1012 cm-2 and mobilities at 300 K between 9000 and 10,000 cm$+$/ V-1 S-1. The different buffer layer designs used were: 1) a standard undoped Al0.48In0.52As buffer 250-nm-thick; 2) an Al0.48In0.52As buffer with a 20-angstrom thick highly doped p-type region 50 angstrom below the channel; 3) A Ga0.47In0.53As buffer with a 20-angstrom-thick highly doped p-type region below the channel; and 4) a low-temperature AlInAs buffer layer. The device with the low-temperature AlInAs had the best output characteristics, signifying that it was the best mode of confining electrons in the channel.

Duke Scholars

Author April S. Brown Electrical and Computer Engineering