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A novel true random number generator design leveraging emerging memristor technology

Publication ,  Conference
Wang, Y; Wen, W; Hu, M; Li, H
Published in: Proceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI
May 20, 2015

Memristor, the fourth basic circuit element, demonstrates obvious stochastic behaviors in both the static resistance states and the dynamic switching. In this work, a novel memristor-based true random number generator (MTRNG) is presented which leverages the stochastic property when switching a device between its binary states. Compared to conventional random number generators that require amplifiers or comparators with high complexity, the use of memristors significantly reduces the design cost: a basic MTRNG consists of only one memristor, six transistors, and one D Flip-flop. To maximize the entropy of the random bit generation, we further enhanced the design to a 2-branch scheme which can provide a uniform bit distribution. Our simulation results show that the proposed MTRNGs offer high operating speed and low power consumption: the reading clocks of the basic 1-branch and the enhanced 2-branch schemes can reach at 1.05GHz and 0.96GHz with power assumptions of 31.1 μW and 80.3μW, respectively. Moreover, the zero-ver-sus-one distributions and sampling rates of MTRNGs can be flexibly reconfigured by modulating the width and amplitude of the programming pulse applied on a memristor and therefore adjusting its switching probability between ON and OFF states.

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Published In

Proceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI

DOI

ISBN

9781450334747

Publication Date

May 20, 2015

Volume

20-22-May-2015

Start / End Page

271 / 276
 

Citation

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Wang, Y., Wen, W., Hu, M., & Li, H. (2015). A novel true random number generator design leveraging emerging memristor technology. In Proceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI (Vol. 20-22-May-2015, pp. 271–276). https://doi.org/10.1145/2742060.2742088
Wang, Y., W. Wen, M. Hu, and H. Li. “A novel true random number generator design leveraging emerging memristor technology.” In Proceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI, 20-22-May-2015:271–76, 2015. https://doi.org/10.1145/2742060.2742088.
Wang Y, Wen W, Hu M, Li H. A novel true random number generator design leveraging emerging memristor technology. In: Proceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI. 2015. p. 271–6.
Wang, Y., et al. “A novel true random number generator design leveraging emerging memristor technology.” Proceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI, vol. 20-22-May-2015, 2015, pp. 271–76. Scopus, doi:10.1145/2742060.2742088.
Wang Y, Wen W, Hu M, Li H. A novel true random number generator design leveraging emerging memristor technology. Proceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI. 2015. p. 271–276.

Published In

Proceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI

DOI

ISBN

9781450334747

Publication Date

May 20, 2015

Volume

20-22-May-2015

Start / End Page

271 / 276