Dissolution of Oxygen Precipitate Nuclei in n-Type CZ-Si Wafers to Improve Their Material Quality: Experimental Results
Publication
, Journal Article
Sopori, B; Basnyat, P; Devayajanam, S; Tan, T; Upadhyaya, A; Tate, K; Rohatgi, A; Xu, H
Published in: IEEE Journal of Photovoltaics
January 1, 2017
We present experimental results which show that oxygen-related precipitate nuclei (OPN) present in p-doped, n-Type, Czochralski wafers can be dissolved using a flash-Annealing process, yielding very high quality wafers for high-efficiency solar cells. Flash annealing consists of heating a wafer in an optical furnace to temperature between 1150 and 1250 °C for a short time. This process produces a large increase in the minority carrier lifetime (MCLT) and homogenizes each wafer. We have tested wafers from different axial locations of two ingots. All wafers reach nearly the same high value of MCLT. The OPN dissolution is confirmed by oxygen analysis using Fourier transform infrared spectra and injection-level dependence of MCLT.
Duke Scholars
Published In
IEEE Journal of Photovoltaics
DOI
ISSN
2156-3381
Publication Date
January 1, 2017
Volume
7
Issue
1
Start / End Page
97 / 103
Related Subject Headings
- 4016 Materials engineering
- 4009 Electronics, sensors and digital hardware
- 0912 Materials Engineering
- 0906 Electrical and Electronic Engineering
- 0206 Quantum Physics
Citation
APA
Chicago
ICMJE
MLA
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Sopori, B., Basnyat, P., Devayajanam, S., Tan, T., Upadhyaya, A., Tate, K., … Xu, H. (2017). Dissolution of Oxygen Precipitate Nuclei in n-Type CZ-Si Wafers to Improve Their Material Quality: Experimental Results. IEEE Journal of Photovoltaics, 7(1), 97–103. https://doi.org/10.1109/JPHOTOV.2016.2621345
Sopori, B., P. Basnyat, S. Devayajanam, T. Tan, A. Upadhyaya, K. Tate, A. Rohatgi, and H. Xu. “Dissolution of Oxygen Precipitate Nuclei in n-Type CZ-Si Wafers to Improve Their Material Quality: Experimental Results.” IEEE Journal of Photovoltaics 7, no. 1 (January 1, 2017): 97–103. https://doi.org/10.1109/JPHOTOV.2016.2621345.
Sopori B, Basnyat P, Devayajanam S, Tan T, Upadhyaya A, Tate K, et al. Dissolution of Oxygen Precipitate Nuclei in n-Type CZ-Si Wafers to Improve Their Material Quality: Experimental Results. IEEE Journal of Photovoltaics. 2017 Jan 1;7(1):97–103.
Sopori, B., et al. “Dissolution of Oxygen Precipitate Nuclei in n-Type CZ-Si Wafers to Improve Their Material Quality: Experimental Results.” IEEE Journal of Photovoltaics, vol. 7, no. 1, Jan. 2017, pp. 97–103. Scopus, doi:10.1109/JPHOTOV.2016.2621345.
Sopori B, Basnyat P, Devayajanam S, Tan T, Upadhyaya A, Tate K, Rohatgi A, Xu H. Dissolution of Oxygen Precipitate Nuclei in n-Type CZ-Si Wafers to Improve Their Material Quality: Experimental Results. IEEE Journal of Photovoltaics. 2017 Jan 1;7(1):97–103.
Published In
IEEE Journal of Photovoltaics
DOI
ISSN
2156-3381
Publication Date
January 1, 2017
Volume
7
Issue
1
Start / End Page
97 / 103
Related Subject Headings
- 4016 Materials engineering
- 4009 Electronics, sensors and digital hardware
- 0912 Materials Engineering
- 0906 Electrical and Electronic Engineering
- 0206 Quantum Physics