IIB-6 Shallow p+-n Junction for CMOS VLSI Application Using Germanium Preamorphization
Publication
, Journal Article
Liu, J; Wortman, JJ; Fair, RB
Published in: IEEE Transactions on Electron Devices
January 1, 1985
Duke Scholars
Published In
IEEE Transactions on Electron Devices
DOI
EISSN
1557-9646
ISSN
0018-9383
Publication Date
January 1, 1985
Volume
32
Issue
11
Start / End Page
2533
Related Subject Headings
- Applied Physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering
Citation
APA
Chicago
ICMJE
MLA
NLM
Liu, J., Wortman, J. J., & Fair, R. B. (1985). IIB-6 Shallow p+-n Junction for CMOS VLSI Application Using Germanium Preamorphization. IEEE Transactions on Electron Devices, 32(11), 2533. https://doi.org/10.1109/T-ED.1985.22321
Liu, J., J. J. Wortman, and R. B. Fair. “IIB-6 Shallow p+-n Junction for CMOS VLSI Application Using Germanium Preamorphization.” IEEE Transactions on Electron Devices 32, no. 11 (January 1, 1985): 2533. https://doi.org/10.1109/T-ED.1985.22321.
Liu J, Wortman JJ, Fair RB. IIB-6 Shallow p+-n Junction for CMOS VLSI Application Using Germanium Preamorphization. IEEE Transactions on Electron Devices. 1985 Jan 1;32(11):2533.
Liu, J., et al. “IIB-6 Shallow p+-n Junction for CMOS VLSI Application Using Germanium Preamorphization.” IEEE Transactions on Electron Devices, vol. 32, no. 11, Jan. 1985, p. 2533. Scopus, doi:10.1109/T-ED.1985.22321.
Liu J, Wortman JJ, Fair RB. IIB-6 Shallow p+-n Junction for CMOS VLSI Application Using Germanium Preamorphization. IEEE Transactions on Electron Devices. 1985 Jan 1;32(11):2533.
Published In
IEEE Transactions on Electron Devices
DOI
EISSN
1557-9646
ISSN
0018-9383
Publication Date
January 1, 1985
Volume
32
Issue
11
Start / End Page
2533
Related Subject Headings
- Applied Physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering