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Non-volatile 3D stacking RRAM-based FPGA

Publication ,  Conference
Chen, YC; Wang, W; Li, H; Zhang, W
Published in: Proceedings - 22nd International Conference on Field Programmable Logic and Applications, FPL 2012
December 12, 2012

We demonstrates a novel Field-Programmable Gate Array (FPGA) structure based on Resistive Random Access Memory (RRAM) system. RRAM is a non-volatile memory device which is compatible to CMOS Back End of Line (BEOL) process with only 4F2 area per cell. We use a 1R system memory for logic element, Look-Up-Table (LUT), with three dimension stacking structure. The proposed 2R memory system is for routing elements, Switch Block (SB) and Connection Block (CB), with Complementary Resistive Switches (CRS) structure. Both three dimension stacking and CRS structure are crossbar-like structure to further improve density of the FPGA. The proposed design is different from modern FPGA with Static Random Access Memory (SRAM) system, RRAM-based FPGA has benefits of non-volatility, smaller area, and flexibility of configuration. A bit-addressable LUT is introduced with function of run-time programming memory cells of LUT, which is also known as Distributed Random Access Memory (D-RAM). Based on our simulation results, 62.7% of area reduction and 34% of delay improvement can be achieved compared to the conventional FPGA. © 2012 IEEE.

Duke Scholars

Published In

Proceedings - 22nd International Conference on Field Programmable Logic and Applications, FPL 2012

DOI

ISBN

9781467322560

Publication Date

December 12, 2012

Start / End Page

367 / 372
 

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Chen, Y. C., Wang, W., Li, H., & Zhang, W. (2012). Non-volatile 3D stacking RRAM-based FPGA. In Proceedings - 22nd International Conference on Field Programmable Logic and Applications, FPL 2012 (pp. 367–372). https://doi.org/10.1109/FPL.2012.6339206
Chen, Y. C., W. Wang, H. Li, and W. Zhang. “Non-volatile 3D stacking RRAM-based FPGA.” In Proceedings - 22nd International Conference on Field Programmable Logic and Applications, FPL 2012, 367–72, 2012. https://doi.org/10.1109/FPL.2012.6339206.
Chen YC, Wang W, Li H, Zhang W. Non-volatile 3D stacking RRAM-based FPGA. In: Proceedings - 22nd International Conference on Field Programmable Logic and Applications, FPL 2012. 2012. p. 367–72.
Chen, Y. C., et al. “Non-volatile 3D stacking RRAM-based FPGA.” Proceedings - 22nd International Conference on Field Programmable Logic and Applications, FPL 2012, 2012, pp. 367–72. Scopus, doi:10.1109/FPL.2012.6339206.
Chen YC, Wang W, Li H, Zhang W. Non-volatile 3D stacking RRAM-based FPGA. Proceedings - 22nd International Conference on Field Programmable Logic and Applications, FPL 2012. 2012. p. 367–372.

Published In

Proceedings - 22nd International Conference on Field Programmable Logic and Applications, FPL 2012

DOI

ISBN

9781467322560

Publication Date

December 12, 2012

Start / End Page

367 / 372