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A phenomenological memristor model for short-term/long-term memory

Publication ,  Journal Article
Chen, L; Li, C; Huang, T; Ahmad, HG; Chen, Y
Published in: Physics Letters, Section A: General, Atomic and Solid State Physics
January 1, 2014

Memristor is considered to be a natural electrical synapse because of its distinct memory property and nanoscale. In recent years, more and more similar behaviors are observed between memristors and biological synapse, e.g., short-term memory (STM) and long-term memory (LTM). The traditional mathematical models are unable to capture the new emerging behaviors. In this article, an updated phenomenological model based on the model of the Hewlett-Packard (HP) Labs has been proposed to capture such new behaviors. The new dynamical memristor model with an improved ion diffusion term can emulate the synapse behavior with forgetting effect, and exhibit the transformation between the STM and the LTM. Further, this model can be used in building new type of neural networks with forgetting ability like biological systems, and it is verified by our experiment with Hopfield neural network.

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Published In

Physics Letters, Section A: General, Atomic and Solid State Physics

DOI

ISSN

0375-9601

Publication Date

January 1, 2014

Volume

378

Issue

40

Start / End Page

2924 / 2930

Related Subject Headings

  • Fluids & Plasmas
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 02 Physical Sciences
  • 01 Mathematical Sciences
 

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Chen, L., Li, C., Huang, T., Ahmad, H. G., & Chen, Y. (2014). A phenomenological memristor model for short-term/long-term memory. Physics Letters, Section A: General, Atomic and Solid State Physics, 378(40), 2924–2930. https://doi.org/10.1016/j.physleta.2014.08.018
Chen, L., C. Li, T. Huang, H. G. Ahmad, and Y. Chen. “A phenomenological memristor model for short-term/long-term memory.” Physics Letters, Section A: General, Atomic and Solid State Physics 378, no. 40 (January 1, 2014): 2924–30. https://doi.org/10.1016/j.physleta.2014.08.018.
Chen L, Li C, Huang T, Ahmad HG, Chen Y. A phenomenological memristor model for short-term/long-term memory. Physics Letters, Section A: General, Atomic and Solid State Physics. 2014 Jan 1;378(40):2924–30.
Chen, L., et al. “A phenomenological memristor model for short-term/long-term memory.” Physics Letters, Section A: General, Atomic and Solid State Physics, vol. 378, no. 40, Jan. 2014, pp. 2924–30. Scopus, doi:10.1016/j.physleta.2014.08.018.
Chen L, Li C, Huang T, Ahmad HG, Chen Y. A phenomenological memristor model for short-term/long-term memory. Physics Letters, Section A: General, Atomic and Solid State Physics. 2014 Jan 1;378(40):2924–2930.
Journal cover image

Published In

Physics Letters, Section A: General, Atomic and Solid State Physics

DOI

ISSN

0375-9601

Publication Date

January 1, 2014

Volume

378

Issue

40

Start / End Page

2924 / 2930

Related Subject Headings

  • Fluids & Plasmas
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 02 Physical Sciences
  • 01 Mathematical Sciences